An electronic component comprises a substrate including a main surface on which a functional unit is formed and a cap layer defining a cavity enclosing and covering the functional unit. The cap layer is provided with holes communicating an inside of the cavity with an outside of the cavity. A resin layer covers the cap layer and the main surface and includes one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.
H03H 3/007 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
3.
Electronic package including cavity defined by resin and method of forming same
A method of manufacturing an electronic device includes preparing an electronic component including a first substrate on a main surface of which a functional unit and a first resin layer are formed. The first resin layer has a first surface facing the main surface of the first substrate, a second surface opposed to the first surface, a cavity on the first surface enclosing the functional unit, and a portion defining a wall of the cavity. The first resin layer defines a recess provided with a solder layer on the second surface. The method further includes preparing a second substrate having an electrode pad formed on a main surface, aligning the electronic component with the second substrate to layer the solder layer and the electrode pad in contact with the solder layer, and forming the electronic component and the second substrate into the electronic device.
A filter device including a first filter having a first passband, and a second filter having a second passband, the first and second filters each being connected between a common contact and a respective signal contact, and the filter device configured to reduce spurious emissions generated in one filter due to propagation of Lamb waves in the other filter. In one example the first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film formed over the piezoelectric substrate covering the SAW filter and the SAW resonator. The dielectric film has a first thickness over the SAW filter and a second, lesser, thickness over the SAW resonator, a difference between the first and second thicknesses being selected to suppress spurious emissions in the second passband generated by propagation of a Lamb wave in the SAW filter.
Phase shift circuits including two or more slanted-finger IDT electrodes, and filters, duplexers, or other electronic devices incorporating same. In one example a filter includes a main filter circuit connected between an input and an output and having a first phase characteristic, and a phase shift circuit connected in parallel with the main filter circuit, the phase shift circuit including first and second capacitor elements and a pair of acoustic wave elements connected in series between the first and second capacitor elements, the pair of acoustic wave elements including a pair of slanted-finger IDT electrodes disposed apart from each other on a single acoustic wave path along which acoustic waves propagate through the acoustic wave elements, the phase shift circuit having a second phase characteristic opposite to the first phase characteristic in an attenuation band that corresponds to at least a portion of a stopband of the main filter circuit.
Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter (200) includes an element substrate (210) having a top surface (210a), a bottom surface (210b), a side surface (210b), and piezoelectric body. A circuit including a plurality of SAW resonators (231 - 273) is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate (220) having a top surface (220a) and a bottom surface (220b), and a side wall (270) including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.
Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.
A filter device that reduces spurious emissions generated in a frequency band 1.2 to 1.4 times greater than a center frequency of a passband of a filter. In one example the filter device includes a first filter connected between a common contact and a first signal contact and having a first passband, and a second filter connected between the common contact and a second signal contact and having a second passband with a center frequency in a range of 1.2 to 1.4 times greater than a center frequency of the first passband. The first filter includes a SAW filter formed on a piezoelectric substrate, a SAW resonator formed on the piezoelectric substrate and connected in series between the common contact and the SAW filter, and a dielectric film covering the SAW filter and SAW resonator, the dielectric film having a reduced thickness in a region corresponding to the SAW resonator.
A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.
H01L 41/053 - Mounts, supports, enclosures or casings
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/007 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H03H 3/00 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
An electronic component may include a substrate having a functional unit formed on a main surface of the substrate and a first resin layer formed on the main surface, the first resin layer having a first surface facing the main surface and a second surface opposed to the first surface, the first resin layer defining a cavity on the first surface enclosing the functional unit, the first resin layer defining a recess on the second surface, and a solder layer being formed in the recess so as not to exceed the second surface in a thickness direction. The functional unit may include a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR) having a mechanically movable portion. The substrate may be formed of dielectric material.
An elastic wave resonator including a pair of comb-shaped electrodes and a pair of reflector electrodes formed on a piezoelectric substrate. In one example, the pair of comb-shaped electrodes includes first and second overlapping regions in which electrode fingers of the comb-shaped electrodes interdigitate, the second overlapping region being provided on both outside edges of the first overlapping region in an overlapping width direction, an overlapping width of the first overlapping region being greater than an overlapping width of the second overlapping region, the pair of comb-shaped electrodes being configured to excite a first elastic wave in the first overlapping region and to excite a second elastic wave in the second overlapping region, a frequency of the first elastic wave being higher than a frequency of the second elastic wave.
b) disposed above the IDT electrode (150) has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body (130). The first thickness T is less than the second thickness K based on FIG. 2C and the relevant description.
An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
14.
Methods of reducing electric loss in elastic wave elements
Methods and apparatus for reducing electric loss in an elastic wave element. In one example such a method includes forming an IDT electrode on a piezoelectric body, and forming the connection wiring on the piezoelectric body and electrically connecting the connection wiring to the IDT electrode. Forming the connection wiring includes sequentially forming a lower connection wiring on an upper surface of the piezoelectric body and forming an upper connection wiring over the lower connection wiring. The method further includes forming a reinforcement electrode over the connection wiring that divides the upper connection wiring into first and second upper connection wirings electrically connected to one another by the reinforcement electrode. The reinforcement electrode is formed abutting an upper surface of the lower connection wiring between the first and second upper connection wirings and electrically connected to the lower connection wiring and to the first and second upper connection wirings.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A method of manufacturing an acoustic wave element includes simultaneously forming a plurality of electrodes on a piezoelectric substrate, the plurality of electrodes including first and second IDT electrodes and a connection electrode, forming an insulation over the plurality of electrodes and the piezoelectric substrate, the insulation having a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode, processing a first portion of the insulation over the first IDT electrode and a second portion of the insulation over the connection electrode to reduce a thickness of the first and second portions of the insulation to a second thickness, and processing a third portion of the insulation over the surface of the second IDT electrode to reduce the first thickness of the third portion to a third thickness, the third thickness being greater than the second thickness.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H01P 5/12 - Coupling devices having more than two ports
A filter device having improved attenuation and isolation characteristics. In one example the filter device has a common terminal, a first terminal, and a second terminal, and includes a first filter connected between the common terminal and the first terminal, a second filter connected between the common terminal and the second terminal, and an additional circuit including at least three IDT electrodes each connected to a respective one of a corresponding at least three connection points within the filter device, the at least three connection points being selected from a group consisting of the common terminal, the first terminal, the second terminal, a first node disposed between the plurality of first filter elements along a path extending between the common terminal and the first terminal, and a second node disposed between the plurality of second filter elements along a path extending between the common terminal and the second terminal.
A high-frequency filter including first and second signal terminals, a filter circuit having a passband and a stopband and being connected between the first signal terminal and the second signal terminal, and an additional circuit connected in parallel with the filter circuit between the first signal terminal and the second signal terminal. The filter circuit is configured to provide a first output signal responsive to receipt of an input signal. The additional circuit has an attenuation band within the stopband, and is configured to provide a second output signal responsive to receiving the input signal, the first and second output signals having phase components opposite to each other in the attenuation band.
An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
H03H 9/70 - Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common or source
19.
Acoustic wave device including multiple dielectric films
An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A ladder-type elastic wave filter includes an input terminal, an output terminal, and a ground terminal, a first series resonator and a second series resonator connected in series between the input terminal and the output terminal, and a first parallel resonator having a first terminal electrically connected to the series connection between the first series resonator and the second series resonator and a second terminal electrically connected to the ground terminal. A resonance frequency of the first parallel resonator is higher than a resonance frequency of both of the first series resonator and the second series resonator and lower than an antiresonance frequency of both of the first series resonator and the second series resonator.
An acoustic wave device includes a first longitudinally-coupled acoustic wave filter having interdigital transducer (“IDT”) electrodes arranged in a propagation direction of acoustic wave, and a second longitudinally-coupled acoustic wave filter having IDT electrodes arranged in a propagation direction of acoustic wave. In the IDT electrodes of the first longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an in-phase relation. In the IDT electrodes of the second longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an anti-phase relation. This acoustic wave device has an excellent attenuation characteristic while maintaining a preferable insertion loss.
An acoustic wave element comprising a lithium tantalate substrate having the Euler angles (φ, θ, ψ), a first component φ satisfying 10°≤φ≤50°; and an electrode disposed on the lithium tantalate substrate and configured to excite a main acoustic wave of wavelength λ, the electrode having a density ρM satisfying ρM≥ρTi where ρTi represents a density of titanium (Ti), and a thickness hM of the electrode satisfies 0.141×exp(0.075ρM)λ≤hM≤0.134λ Embodiments of the present disclosure minimize a thickness of the electrode and suppress a spurious Rayleigh wave signal.
An electronic device includes a main circuit connected between an input terminal and an output terminal, and an auxiliary circuit connected in parallel to the main circuit between the input terminal and the output terminal. The main circuit includes a filter having a first passband and a stopband. The auxiliary circuit has a passing characteristic that allows a signal having a frequency in a certain frequency band inside the stopband to pass through the auxiliary circuit. The main circuit is configured to output a main signal in response to an input signal. The auxiliary circuit is configured to output an auxiliary signal in response to the input signal. The main signal and the auxiliary signal contain phase components opposite to each other in the certain frequency band inside the stopband. This electronic device has an attenuation amount in the stopband.
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
An elastic wave filter has an unbalanced signal terminal, first and second balanced signal terminals, and first through fifth IDT electrodes arranged in ordinal order between a pair of grating reflectors. Wiring electrodes of the third and fifth IDT electrodes are disposed adjacent a ground electrode of the fourth IDT electrode, wiring electrodes of the second and third IDT electrodes are disposed adjacent one another, and ground electrodes of the first and second IDT electrodes are disposed adjacent one another. The unbalanced signal terminal is connected to the wiring electrodes of the first, third, and fifth IDT electrodes, and the first and second balanced signal terminals are connected to the wiring electrodes of the second and fourth IDT electrodes, respectively. A pitch gradation of pitch spacing between electrode fingers in each of the first, second, and third IDT electrodes on one side of a center line in the third IDT electrode is gradually reduced by a first spacing α, and a pitch gradation of pitch spacing between electrode fingers in each of the third, fourth, and fifth IDT electrodes on the other side of the center line is gradually reduced by a second spacing β (β≠α), as the distance from the center line increases.
A ladder-type surface acoustic wave filter assembly includes a plurality of series resonators formed on a substrate and connected between an input terminal and an output terminal. A first series resonator has a lowest resonance frequency among the plurality of series resonator. A parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal. A dielectric film is coupled to at least one of the plurality of series resonators and has an inverse temperature coefficient of frequency to that of the substrate. A film thickness of the dielectric film in a region where the second series resonator is formed is smaller than a film thickness of the dielectric film in a region where the first series resonator is formed.
An object of the present disclosure is to provide an elastic wave resonator having a high Q value, and producing little or no unwanted spurious signals. In order to achieve the object, an elastic wave resonator according to the present disclosure includes a piezoelectric substrate and an IDT electrode. The IDT electrode has an apodization-weighting portion in which a staggered section width decreases toward an end portion of the IDT electrode in an elastic wave propagation direction. The electrode finger pitch of the IDT electrode decreases toward an end portion of the IDT electrode in an end portion, in the elastic wave propagation direction, of a staggered region of the IDT electrode.
An elastic wave device includes an interdigital transducer (IDT) electrode disposed on an upper surface of a piezoelectric substrate, a wiring electrode disposed on the upper surface of the piezoelectric substrate and connected to the IDT electrode, and a first insulator layer disposed on the upper surface of the piezoelectric substrate. The first insulator layer seals the IDT electrode and the wiring electrode and includes a first resin and a first filler. A resin layer including no filler is provided on an upper surface of the first insulator layer. An inductor electrode is disposed on an upper surface of the resin layer. A second insulator layer is disposed on the upper surface of the resin layer and covers the inductor electrode. A terminal electrode is disposed on an upper surface of the second insulator layer. A connecting electrode electrically connects the wiring electrode, the terminal electrode, and the inductor electrode.
An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
An elastic wave filter including a substrate, a signal line disposed on the substrate and connecting a first signal terminal to a second signal terminal, a plurality of series resonators connected to the signal line in series, and a plurality of parallel resonators connected to the signal line. At least one of the series resonator having an anti-resonant frequency closest to the passband of the filter among the plurality of series resonators, and/or the parallel resonator having a resonant frequency closest to the passband of the filter among the plurality of parallel resonators, is covered with a dielectric film that is relatively thicker than a dielectric film covering the other series and/or parallel resonators.
An acoustic wave device that can be downsized. Certain examples of the acoustic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an acoustic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.
An acoustic wave filter including a substrate (112), a signal line (108) disposed on the substrate and connecting a first signal terminal (102) to a second signal terminal (104), a plurality of series resonators (S11, S12, S13, S14, S15) connected to the signal line (108) in series, and a plurality of parallel resonators (P11, P12, P13, P14, P15) connected to the signal line. At least one of the series resonator having an anti-resonant frequency closest to the passband of the filter among the plurality of series resonators, and/or at least one the parallel resonator (P13, P14) having a resonant frequency closest to the passband of the filter among the plurality of parallel resonators, is covered with a dielectric film (114) that has a thickness (T1) that is relatively thicker than a dielectric film having a thickness (T2) covering the other series and/or parallel resonators (P11, P15).
An acoustic wave element (100) according to certain examples includes a piezoelectric body (130), an interdigital transducer (IDT) electrode (140, 150) disposed above the piezoelectric body (130), and a connection electrode (160) disposed above the piezoelectric body (130) and connected to the IDT electrode (140, 150). A first insulation layer (172) covers the connection electrode (160), and a second insulation layer (174a, 174b) covers the IDT electrode (140, 150). The first insulation layer (172) disposed above the connection electrode (160) has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body (130) and the second insulation layer (174b) disposed above the IDT electrode (150) has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body (130). The first thickness T is less than the second thickness K based on FIG.2C and the relevant description.
A high-frequency filter includes a first output to output a first signal, a first filter, a second filter, and a first matching circuit connected to an output of the first filter and to an output of the second filter. The first signal is provided to the first output from one of the output of the first filter and the output of the second filter via the first matching circuit. The first matching circuit includes a resonator connected in series between the first output and the output of only one of the first filter and the second filter.
H03H 9/70 - Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common or source
H01Q 5/335 - Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
H04B 1/00 - TRANSMISSION - Details of transmission systems not characterised by the medium used for transmission
H04B 1/525 - Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
H03F 3/189 - High-frequency amplifiers, e.g. radio frequency amplifiers
H04B 1/3816 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving with connectors for programming identification devices
34.
Acoustic wave elements and antenna duplexers, and modules and electronic devices using same
An acoustic wave element according to certain examples includes a piezoelectric body, an interdigital transducer (IDT) electrode disposed above the piezoelectric body, and a connection electrode disposed above the piezoelectric body and connected to the IDT electrode. A first insulation layer covers the connection electrode, and a second insulation layer covers the IDT electrode. The first insulation layer disposed above the connection electrode has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body and the second insulation layer disposed above the IDT electrode has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body. The first thickness T is less than the second thickness K.
H01P 5/12 - Coupling devices having more than two ports
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An acoustic wave device including a substrate (12), an interdigital transducer electrode (13) provided on an upper surface of the substrate, a first wiring electrode (14, 15) provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film (16) that does not cover a first region (18) of the first wiring electrode but covers a second region (19) of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region (19), and a second wiring electrode (17) that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate. The dielectric film (16) may have a certain film thickness (T2) and a tapered thickness (T1) resulting from the underlying cutout. The tapered thickness may protect the IDT electrode (13) from chemical degradation and mechanical damage.
An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An acoustic wave device is provided with a low-frequency side filter having a low-frequency side passband, a high-frequency side filter having a high-frequency side passband, and first and second balanced terminals. The low-frequency side filter is connected to a first unbalanced terminal. The low-frequency side passband is a frequency band from a first minimum frequency to a first maximum frequency. The high-frequency side filter is connected to a second unbalanced terminal. The high-frequency side passband is a frequency band from a second minimum frequency to a second maximum frequency. The low-frequency side filter includes a first longitudinally-coupled acoustic wave resonator and a first one-terminal pair acoustic wave resonator connected in series to the first longitudinally-coupled acoustic wave resonator. An antiresonant frequency of the first one-terminal pair acoustic wave resonator is set to be higher than the first maximum frequency and lower than the second minimum frequency.
An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.
An acoustic wave resonator (100) including comb-shaped electrodes (102) and reflector electrodes (103) formed on a piezoelectric substrate (101). In one example, an overlapping portion between the comb-shaped electrodes (102) includes a first overlapping region (104) and second overlapping regions (105). The second overlapping regions (105) can be provided on both outside edges of the first overlapping region (104). In one example, the overlapping width of the first overlapping region is greater than the overlapping width of the second overlapping region, and the electrode finger pitch in the second overlapping region is greater than the electrode finger pitch in the first overlapping region.
An elastic wave resonator including comb-shaped electrodes and reflector electrodes formed on a piezoelectric substrate. In one example, an overlapping portion between the comb-shaped electrodes includes a first overlapping region and second overlapping regions. The second overlapping regions can be provided on both outside edges of the first overlapping region. In one example, the overlapping width of the first overlapping region is greater than the overlapping width of the second overlapping region, and the electrode finger pitch in the second overlapping region is greater than the electrode finger pitch in the first overlapping region.
An electronic component includes a substrate a functional section provided on the substrate, and a sealing body which is provided on the substrate and seals the functional section. In a temperature region having a lowest temperature that is at least as high as the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is greater than the coefficient of linear expansion of the substrate. In a temperature region having a highest temperature that is lower than the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is less than the coefficient of linear expansion of the substrate. The electronic component exhibits superior reliability even upon prolonged use.
Methods and apparatus for reducing electric loss in an acoustic wave element. In one example, the acoustic wave element (60) includes a piezoelectric body (50) having an upper surface, an interdigital transducer (IDT) electrode (10, 20) disposed on the piezoelectric body, a connection wiring (30) disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode (40) provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.
In an acoustic wave device, an unnecessary high-order transverse mode wave is suppressed. The acoustic wave device includes a piezoelectric substrate, at least one pair of interdigital transducer (IDT) electrodes formed on the piezoelectric substrate, and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes. The IDT electrodes each have a plurality of electrode fingers interleaved with each other. An acoustic velocity of an acoustic wave in the area in which the electrode fingers are interleaved with each other is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.
Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.
An antenna duplexer includes first and second filters connected to an antenna terminal. The first filter has a passband of a low frequency band. The second filter has a passband of a high frequency band. The second filter is a ladder-type filter including series-arm resonators and parallel-arm resonators. At least one parallel-arm resonator out of the parallel-arm resonators has a main resonance and an auxiliary resonance. Attenuation poles caused by the main resonance and the auxiliary resonance are within the low frequency band. This antenna duplexer has a high attenuation characteristic and a high isolation characteristic while maintaining a low insertion loss.
An acoustic wave device includes a first longitudinally-coupled acoustic wave filter having interdigital transducer (“IDT”) electrodes arranged in a propagation direction of acoustic wave, and a second longitudinally-coupled acoustic wave filter having IDT electrodes arranged in a propagation direction of acoustic wave. In the IDT electrodes of the first longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an in-phase relation. In the IDT electrodes of the second longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an anti-phase relation. This acoustic wave device has an excellent attenuation characteristic while maintaining a preferable insertion loss.
An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics.
An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
Assigning multiple functions to a PA and simplifying wiring and circuits are achieved without using switches in a transmission-and-reception system using a high-frequency filter that supports multiple bands. Provided is a high-frequency filter including: first and second transmission filters; first and second reception filters; and a matching circuit connected to input sides of the first and second transmission filters. Transmission signals are inputted to the first and second transmission filters via the matching circuit. A resonator forming the matching circuit is serially connected to an input side of, among the first and second transmission filters, a filter whose passband is a higher frequency band.
H04B 1/525 - Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
H03F 3/189 - High-frequency amplifiers, e.g. radio frequency amplifiers
H03H 11/34 - Networks for connecting several sources or loads working on different frequencies or frequency bands, to a common load or source
H04B 1/3816 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving with connectors for programming identification devices
50.
Ladder-type elastic wave filter and antenna duplexer using same
In a ladder-type elastic wave filter, a resonance frequency of a second parallel resonator is higher than that of a series resonator and lower than an antiresonance frequency of a series resonator. With this configuration, an attenuation pole is formed by the second parallel resonator at a frequency region lower than an attenuation pole formed by the series resonator in a frequency region higher than the passband of the ladder-type elastic wave filter.
An acoustic wave device includes a piezoelectric substrate, a comb-shaped electrode formed on the piezoelectric substrate and configured to excite a Rayleigh wave as a main acoustic wave, a first dielectric film formed above the piezoelectric substrate to cover the comb-shaped electrode, and a second dielectric film having a portion provided between electrode fingers of the comb-shaped electrode and a portion provided above the comb-shaped electrode. The portion provided between the electrode fingers is provided between the piezoelectric substrate and the first dielectric film. The portion provided above the comb-shaped electrode is provided between the comb-shaped electrode and the first dielectric film. A speed of a transverse wave propagating through the first dielectric film is lower than a speed of the Rayleigh wave excited by the comb-shaped electrode. A speed of a transverse wave propagating through the second dielectric film is higher than the speed of Rayleigh wave excited by the comb-shaped electrode.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
In a filter module capable of handling multiple bands, cross wiring with an RF-IC is to be solved. The filter module includes: an antenna terminal; first and second transmission filters; first and second reception filters; a first switch circuit connected to the antenna terminal, and selectively connected to the first and second transmission filters; a second switch circuit connected to the antenna terminal, and selectively connected to the first and second reception filters; a first matching circuit connected between the first switch circuit and the first transmission filter or between the second switch circuit and the first reception filter; and a second matching circuit connected between the first switch circuit and the second transmission filter or between the second switch circuit and the second reception filter.
An acoustic wave device includes a piezoelectric substrate, comb-shaped electrodes, wires, a sealing body, terminal electrodes, and connection electrodes. The comb-shaped electrodes are disposed on the piezoelectric substrate and are connected to the wires. The sealing body is disposed on the piezoelectric substrate in such a manner that the comb-shaped electrodes are sealed between the piezoelectric substrate and the sealing body. The terminal electrodes are disposed on the sealing body. The connection electrodes penetrate the sealing body so as to electrically connect the wires and the terminal electrodes, respectively. A first linear expansion coefficient in a first temperature range below a first glass transition temperature of the sealing body is larger than a second linear expansion coefficient in a second temperature range above the first glass transition temperature.
A reflector of the elastic wave resonator in an elastic wave device has first and second regions. The second region has third and fourth regions. The first region is located near to the IDTs of the reflector, while the second region is located farther from them. The third region is located nearer to the IDTs in the second region, while the fourth region is located farther from them. As a result that the center frequency of the reflection band in the fourth region is lower than that in the third region, an elastic wave device with low energy loss and insertion loss is provided.
An elastic wave device includes a piezoelectric substrate, a comb-shaped electrode above an upper surface of the piezoelectric substrate, a wiring connected to the comb-shaped electrode, an element cover above the upper surface of the piezoelectric substrate for covering the comb-shaped electrode across a space, a first electrode above an upper surface of the element cover, a sealing resin above the upper surface of the piezoelectric substrate for covering the element cover and the first electrode, a terminal electrode above an upper surface of the sealing resin, and a second electrode passing through the sealing resin for electrically connecting the first electrode with the terminal electrode. The first and second electrodes are made of films produced by electro-plating. The diameter of plating particles of the first electrode may be larger than that of plating particles of the second electrode.
An electronic device includes a main circuit connected between an input terminal and an output terminal, and an auxiliary circuit connected in parallel to the main circuit between the input terminal and the output terminal. The main circuit includes a filter having a first passband and a stopband. The auxiliary circuit has a passing characteristic that allows a signal having a frequency in a certain frequency band inside the stopband to pass through the auxiliary circuit. The main circuit is configured to output a main signal in response to an input signal. The auxiliary circuit is configured to output an auxiliary signal in response to the input signal. The main signal and the auxiliary signal contain phase components opposite to each other in the certain frequency band inside the stopband. This electronic device has an attenuation amount in the stopband.
An elastic wave device includes a piezoelectric substrate, a pair of reflectors disposed on the piezoelectric substrate along the propagation direction of an elastic wave, and first to fifth comb electrode pairs disposed in this order between the pair of reflectors. Ground comb electrodes of adjacent comb electrode pairs are connected by an even number of connection electrode fingers or by an odd number of connection electrode fingers.
A multimode elastic wave device includes a pair of reflectors, and a first interdigital transducer (IDT) electrode through a fifth IDT electrode arranged between the pair of reflectors. In this configuration, each of the average of electrode-finger pitches in the first IDT electrode and the average of electrode-finger pitches in the fifth IDT electrode is smaller than both of the average of electrode-finger pitches in the second IDT electrode and the average of electrode-finger pitches in the fourth IDT electrode.
An elastic wave element includes a piezoelectric substrate, an IDT electrode, and a first dielectric film. The IDT electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers. The piezoelectric substrate includes a bus bar electrode region, an alternately disposed region, and an intermediate region. The first dielectric film is formed in at least a part of the intermediate region, and formed of a medium in which acoustic velocity of a transverse wave propagating in the first dielectric film is lower than acoustic velocity of a main elastic wave in the alternately disposed region.
An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.
In an acoustic wave device, a high-order transverse mode wave which is an unnecessary wave is suppressed. The acoustic wave device includes: a piezoelectric substrate; at least one pair of IDT electrodes formed on the piezoelectric substrate; and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes, and the IDT electrodes each has a plurality of electrode fingers. The dielectric film covers at least an area in which the electrode fingers are arranged interleaved with each other. An acoustic velocity of an acoustic wave in an intersection area, within the region, which is a portion from ends of the electrode fingers to a predetermined length or more inward from the ends, is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.
An elastic wave filter includes first and second longitudinally coupled elastic wave filters. The first filter includes a first pair of grating reflectors, first to fifth IDT electrodes arranged in ordinal order between the grating reflectors along a propagation direction of elastic waves, a first unbalanced terminal, and first and second balanced terminals. The second filter has a second unbalanced terminal, and third and fourth balanced terminals, the first and second unbalanced terminals being electrically connected to each other, the first and third balanced terminals being electrically connected to a first JO terminal, and the second and fourth balanced terminals being electrically connected to a second JO terminal. The first and second balanced terminals, and the third and fourth balanced terminals, output signals opposite in phase to each other. A first signal at the first JO terminal is opposite in phase to a second signal at the second IO terminal.
An antenna duplexer includes a transmission filter and a reception filter both coupled with an antenna terminal. The transmission filter has a lower pass band than the reception filter. The transmission filter includes a first series resonator coupled with a first terminal, a second series resonator connected to the first series resonator at a first node, a first parallel resonator connected to a first port of the first series resonator, a second parallel resonator connected to a first node and the first parallel resonator at a second node, a third parallel resonator connected to the first node, a fourth parallel resonator connected to the third parallel resonator at a third node, a first inductance element coupled with the second node and a ground, and a second inductance element coupled with the third node and the ground. The second inductance element has a lower inductance than the first inductance element.
An acoustic wave device is provided with a low-frequency side filter having a low-frequency side passband, a high-frequency side filter having a high-frequency side passband, and first and second balanced terminals. The low-frequency side filter is connected to a first unbalanced terminal. The low-frequency side passband is a frequency band from a first minimum frequency to a first maximum frequency. The high-frequency side filter is connected to a second unbalanced terminal. The high-frequency side passband is a frequency band from a second minimum frequency to a second maximum frequency. The low-frequency side filter includes a first longitudinally-coupled acoustic wave resonator and a first one-terminal pair acoustic wave resonator connected in series to the first longitudinally-coupled acoustic wave resonator. An antiresonant frequency of the first one-terminal pair acoustic wave resonator is set to be higher than the first maximum frequency and lower than the second minimum frequency.
A ladder-type surface acoustic wave filter includes a first series resonator having the lowest resonance frequency among a plurality of series resonators; and a second series resonator having a resonance frequency higher than the first series resonator. The film thickness of a dielectric film in the region where the first series resonator is formed is larger than that of a dielectric film in the region where the second series resonator is formed.
An elastic wave device includes a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, a second balanced terminal, a first filter part, and a second filter part. A phase of an electric signal transmitted from first unbalanced terminal to the first balanced terminal in the first filter part is different from a phase of an electric signal transmitted from the second unbalanced terminal to the first balanced terminal in the second filter part. A phase of an electric signal transmitted from the first unbalanced terminal to the second balanced terminal in the first filter part is different from a phase of an electric signal transmitted from the second unbalanced terminal to the second balanced terminal in the second filter part.
The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.
A duplexer includes an acoustic wave element having a first terminal and a second terminal; a substrate; a first columnar conductor electrically connected to the first terminal, and drawn to a back surface of the substrate while partially in the substrate; a second columnar conductor electrically connected to the second terminal, and drawn to the back surface of the substrate while partially in the substrate. Additionally, a first ground pattern region is between the first columnar conductor drawn part and the second columnar conductor drawn part on the back surface of the substrate; a second ground pattern region is electrically connected to the first ground pattern region and arranged in the part not including the part between the first columnar conductor drawn part and the second columnar conductor drawn part; and a third columnar conductor electrically is connected to the first ground pattern region while partially in the substrate.
An elastic wave filter device includes a longitudinally coupled resonator-type elastic wave filter formed on a piezoelectric substrate; and a ladder-type elastic wave filter connected to the resonator-type elastic wave filter. The resonator-type filter includes an input IDT and an output IDT. The ladder-type filter includes a series arm resonator and a parallel arm resonator. A first ground electrode connected to the parallel arm resonator is electrically separated from a second ground electrode connected to at least one of the input IDT and the output IDT.
An elastic wave device includes an elastic wave resonator which includes a comb-shaped electrode pair including a pair of com-shaped electrodes interdigitating with each other and provided on a piezoelectric substrate and which is configured to trap energy of the elastic wave therein. Each of the pair of comb-shaped electrodes includes interdigital electrode fingers connected to a common. A pitch of the interdigital electrode fingers changes along a direction perpendicular to a propagation direction of elastic wave. The elastic wave device has a small insertion loss and operates efficiently.
An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, a wiring electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a first insulator disposed on the piezoelectric substrate to seal the IDT electrode and the wiring electrode, a resin layer provided on the first insulator, an inductor electrode disposed on the resin layer, a second insulator disposed on the resin layer to cover the inductor electrode, a terminal electrode disposed on the second insulator, and a connecting electrode passing through the first insulator, the second insulator, and the resin layer to electrically connect the wiring electrode, the terminal electrode, and the inductor electrode. The first insulator includes a resin and filler dispersed in the resin. A density of filler in the resin layer is smaller than an average density of the filler in the first insulator. This elastic wave device has excellent characteristics of the inductor while reducing variations of the characteristics.
An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.
An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An antenna duplexer has a first filter passing a signal in a first frequency band and a second filter passing a signal in a second frequency band which is higher than the first frequency band. The first filter includes a first series resonator having a lowest antiresonance frequency and second series resonators. A propagation angle of a main elastic wave of the first series resonator a propagation angle of a main elastic wave of each of the second series resonators are different from each other so that an electromechanical coupling coefficient of the first series resonator is smaller than an electromechanical coupling coefficient of the second series resonators.
An antenna duplexer includes first and second filters connected to an antenna terminal. The first filter has a passband of a low frequency band. The second filter has a passband of a high frequency band. The second filter is a ladder-type filter including series-arm resonators and parallel-arm resonators. At least one parallel-arm resonator out of the parallel-arm resonators has a main resonance and an auxiliary resonance. Attenuation poles caused by the main resonance and the auxiliary resonance are within the low frequency band. This antenna duplexer has a high attenuation characteristic and a high isolation characteristic while maintaining a low insertion loss.
An acoustic wave device includes a piezoelectric substrate made of a lithium niobate material having the Euler angles (φ, θ, ψ), an electrode disposed on the piezoelectric substrate for exciting a major acoustic wave of a wavelength λ, and a protective layer disposed on the piezoelectric substrate to cover the electrode. The protective layer has a thickness greater than 0.27λ. The Euler angles satisfy −100°≦θ≦−60°; 1.193φ−2°≦ψ≦1.193φ+2°; and either ψ≦−2φ−3° or −2φ+3°≦ψ.
An acoustic wave element includes a piezoelectric substrate, an IDT electrode, a sidewall, a lid, and an adhesive layer. The IDT electrode is provided on the piezoelectric substrate. The sidewall is provided around the IDT electrode above the piezoelectric substrate. The lid is provided above the sidewall so as to cover a space above the IDT electrode. The adhesive layer is made of an adhesive provided between the lid and the sidewall. The top surface of the sidewall has a groove. The groove is filled with an adhesive, which reduces the protrusion amount of the adhesive.
An object of the present invention is to improve the passing characteristic at high temperature in a ladder-type elastic wave filter and a duplexer including the filter. The ladder-type elastic wave filter of the present invention includes a piezoelectric substrate, a first series elastic-wave resonator formed on the piezoelectric substrate and connected in series between the input and output terminals of the filter, a parallel elastic-wave resonator formed on the piezoelectric substrate and connected in parallel between the series elastic-wave resonator and the ground terminal, and a dielectric film formed on the piezoelectric substrate so as to cover the first series elastic-wave resonator. The piezoelectric substrate is formed of a material with a negative temperature coefficient. The dielectric film is formed of a material with a positive temperature coefficient and its film thickness is formed thicker than that with which the frequency-temperature coefficient of the first series elastic-wave resonator becomes 0.
The antenna sharing device has a first elastic-wave filter for passing signals of a first frequency passband and a second elastic-wave filter for passing signals of a second frequency passband higher than the first frequency passband. The first elastic-wave filter is a ladder-type filter including a first series resonator and a second series resonator having an antiresonant frequency point higher than that of the first series resonator. The first series resonator has a first IDT electrode and a first dielectric film covering the electrode. The second series resonator has a second IDT electrode and a second dielectric film covering the electrode. The first and the second dielectric films have a first projection and a second projection, respectively, so as to be formed above the electrode fingers of each IDT electrode. The cross-sectional area of the first projection of the first series resonator is larger than that of the second projection of the second series resonator in the excitation direction of the elastic wave. The structure satisfies both of steepness in a crossband and low loss in a passband.
An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
An acoustic wave resonator includes a piezoelectric body, an IDT electrode for exciting an acoustic wave with wavelength λ, and a dielectric thin film provided so as to cover the IDT electrode. The IDT electrode includes a bus bar electrode region, a dummy electrode region, and an IDT cross region in order from outside. The film thickness of the dielectric thin film above at least one of the bus bar electrode region and the dummy electrode region is smaller than that above the IDT cross region by 0.1λ to 0.25λ. This configuration provides an acoustic wave resonator that reduces transverse-mode spurious emission.
An antenna sharer with both low loss and sharp attenuation characteristic in a wide band is achieved. Antennal sharer 1 of the present invention includes first filter 3 for passing a signal in the first frequency band, and second filter 4 for passing a signal in the second frequency band higher than the first frequency band. First filter 3 includes a ladder filter that includes first series resonator 6 and second series resonator 7 with an antiresonant frequency point higher than antiresonant frequency of first series resonator. Electromechanical coupling coefficient of first series resonator 6 is smaller than electromechanical coupling coefficient of second series resonator 7.
An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.
An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, an internal electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a support pillar disposed on the piezoelectric substrate and provided around the IDT electrode, a top panel provided on the support pillar to cover a space above the IDT electrode, an insulation protector provided to cover the support pillar and the top panel, an external electrode disposed on the insulation protector, a conductor pattern disposed on the insulation protector in order to obtain inductance, and a connection electrode provided through the insulation protector, to connect the external electrode and the internal electrode to each other.
An acoustic wave resonator includes a piezoelectric substrate and first and second comb-shaped electrodes provided on the piezoelectric substrate and interdigitating with each other. The first comb-shaped electrode includes a first busbar and first electrode fingers extending in a direction non-perpendicular to a direction in which the first busbar extends. The second comb-shaped electrode includes a second busbar and second electrode fingers extending from the second busbar and interdigitating with the first electrode fingers at an interdigitating region. This acoustic wave resonator can suppress a spurious response due to a transverse mode and has a high Q value.
A ladder-type filter having plural elastic-wave resonators provided on a series arm and a parallel arm in a ladder shape on a piezoelectric substrate. Each of the elastic-wave resonators has an interdigital electrode. The interdigital electrode has plural electrode finger pairs formed of electrode fingers extending from first and second bus bars. The interdigital electrode included in the elastic-wave resonator provided on the parallel arm has an electrode cross width of the electrode fingers extending from the first and second bus bars 23 times or more of the wavelength of elastic waves excited by the interdigital electrodes.
An elastic wave device has a convex portion on the top face of a first dielectric layer over an IDT electrode when the elastic wave device has a structure of a boundary wave device in which a film thickness of a second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.
An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.
An acoustic wave duplexer includes a piezoelectric substrate, a first filter and a second filter whose center frequency is higher than that of the first filter, the first and second filters being provided on the piezoelectric substrate. The first filter is structured as a ladder type. A resonator positioned nearest to an antenna terminal out of series-arm resonators is designated as a first resonator. A pitch of a comb-shaped electrode structuring the first resonator is set such that a bulk wave emission frequency of the first resonator becomes higher than a passband of the second filter.
An elastic wave device has the following elements: a piezoelectric substrate; an inter-digital transducer (IDT) electrode disposed on the piezoelectric substrate; internal electrodes disposed above the piezoelectric substrate and electrically connected to the IDT electrode; side walls disposed above the internal electrodes surrounding the IDT electrode; a cover disposed above the side walls so as to cover a space above the IDT electrode; an electrode base layer disposed on the internal electrodes outside the side walls; and connection electrodes disposed on the electrode base layer. Each connection electrode has a first connection electrode disposed on the electrode base layer, and a second connection electrode disposed on the first connection electrode. The horizontal sectional shape of the second connection electrode is non-circular.
A surface acoustic wave (SAW) filter device includes an input port for receiving an unbalanced signal, a pair of input/output ports, a first SAW filter for receiving the unbalanced signal from the input port and outputting balanced signals to the pair of input/output ports, a second SAW filter for receiving the balanced signals output from the pair of input/output ports and outputting balanced signals, and a pair of output ports for outputting the balanced signals output from the second SAW filter. The first SAW filter includes a first longitudinally-coupled SAW resonator having a first unbalanced signal input port and first and second balanced signal output ports, and a second longitudinally-coupled SAW resonator having a second unbalanced signal input port and third and fourth balanced signal output port. The first and second unbalanced signal input ports are electrically connected to the input port. The first and third balanced signal output ports both are electrically connected to one of the pair of input/output ports. The second and fourth balanced signal output ports both are electrically connected to another of the pair of input/output ports. This SAW filter device can suppress spurious and has a small insertion loss.
An antenna duplexer includes a transmission filter and a reception filter both coupled with an antenna terminal. A pass band of the transmission filter is lower than a pass band of the reception filter. The transmission filter includes a first series resonator coupled with a first terminal, a second series resonator connected to the first series resonator at a first node, a first parallel resonator connected to a first port of the first series resonator, a second parallel resonator connected to a first node and the first parallel resonator at a second node, a third parallel resonator connected to the first node, a fourth parallel resonator connected to the third parallel resonator at a third node, a first inductance element coupled with the second node and a ground, and a second inductance element coupled with the third node and the ground. The first and second parallel resonators and the first inductance element produce an attenuation pole at a frequency lower than a pass band of the transmission filter. The third and fourth parallel resonators and the second inductance element produce an attenuation pole at a frequency higher than a pass band of the transmission filter. The inductance of the second inductance element is lower than the inductance of the first inductance element. In this antenna duplexer, the transmission filter sufficiently suppresses a spurious caused by harmonics contained in a transmission signal.
An acoustic wave device includes a piezoelectric substrate, an IDT electrode on the substrate, an internal electrode above the substrate, a side wall above the internal electrode, a lid on the side wall, an electrode base layer on the internal electrode, a connection electrode on the electrode base layer, and an anti-corrosion layer between the internal electrode and the side wall. The internal electrode is electrically connected to the IDT electrode. The side wall surrounds the IDT electrode. The lid covers the IDT electrode to provide a space above the IDT electrode. The electrode base layer is provided outside the space and the side wall. The anti-corrosion layer protrudes outside the side wall, and is made of material less soluble in plating solution than the internal electrode. This acoustic wave device prevents the internal electrode from breaking due to plating solution, hence being manufactured at a high yield rate.
An elastic wave filter has first, second, and third IDT electrodes whose wiring electrodes are connected to unbalanced signal terminal; fourth IDT electrode disposed between the first and second IDT electrodes; fifth IDT electrode disposed between the second and third IDT electrodes; and first and second balanced signal terminals connected to the wiring electrodes of fourth and fifth IDT electrodes, respectively. The ground electrodes of the first through fifth IDT electrodes are connected to the ground. Signals in opposite phase and in phase with a signal input to unbalanced signal terminal are output from first and second balanced signal terminals, respectively. The wiring electrodes of second and third IDT electrodes are adjacent to the ground electrode of fifth IDT electrode. The wiring electrode of one of first and second IDT electrodes is adjacent to the wiring electrode of fourth IDT electrode. The ground electrode of the other is adjacent to the ground electrode of fourth IDT electrode. This configuration can suppress spuriousness in the bandpass.
A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.
H03H 9/15 - Constructional features of resonators consisting of piezoelectric or electrostrictive material
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
98.
Surface acoustic wave device and manufacturing method of the same surface acoustic wave device
A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H01L 41/22 - Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.
A duplexer includes an acoustic wave element having a first terminal and a second terminal; a substrate; a first columnar conductor electrically connected to the first terminal, and drawn to a back surface of the substrate while partially in the substrate; a second columnar conductor electrically connected to the second terminal, and drawn to the back surface of the substrate while partially in the substrate. Additionally, a first ground pattern region is between the first columnar conductor drawn part and the second columnar conductor drawn part on the back surface of the substrate; a second ground pattern region is electrically connected to the first ground pattern region and arranged in the part not including the part between the first columnar conductor drawn part and the second columnar conductor drawn part; and a third columnar conductor electrically is connected to the first ground pattern region while partially in the substrate.
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