A ceramic substrate according to one embodiment is characterized in that the ratio A/B of an arc discharge voltage A to a dielectric breakdown voltage B is at least 0.3, in a case where a 50 Hz or 60 Hz alternating-current voltage is applied between the front surface and the rear surface of the ceramic substrate at a voltage rise speed of 200 V/s, and the arc discharge voltage A (kV) obtained by detecting an arc discharge is measured and the dielectric breakdown voltage B (kV) between the front surface and the rear surface is measured in accordance with IEC 672-2. In any cross-section of the ceramic substrate, it is preferable that there be a 90 μｍ × 120 μm region in which the number of first voids having a surface area of less than 1 μm2is within the range of 30 to 500, and the number of second voids having a surface area of at least 1 μm2 is within the range of 0 to 30.
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
A crystal phase information extraction device according to an embodiment of the present invention has a first estimation unit and a second estimation unit. The first estimation unit estimates first crystal phase information relating to a first polycrystalline material. The second estimation unit repeatedly optimizes, using the first crystal phase information, diffraction data that is acquired from a second polycrystalline material in which the component ratio of a crystal phase of interest is lower than that in the first polycrystalline material, and estimates second crystal phase information relating to the second polycrystalline material.
The flat wafer made of sintered silicon nitride is characterized in that at least one surface thereof has an average value of the average length RSm of a plurality of roughness curve elements, having a plurality of line segments passing through the center of that surface as the reference length, within the range from 100 μm to 350 μm. Also, each of the average length RSm of the plurality of roughness curve elements is preferably within the range from 10 μm to 800 μm. Also, the average value of the maximum valley depth Rv of a plurality of roughness curves, having a plurality of line segments passing through the center of the surface as the reference length, is preferably within the range from 0.04 μm to 0.4 μm.
A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 μm to 200 μm. The particle size distribution gives a difference D90−D10 of 10 μm or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
According to one embodiment, there is provided a multielement composite oxide powder that includes an oxide particle including a composite oxide, the composite oxide containing: constituent metal elements containing two or more hexavalent metal elements and two or more pentavalent metal elements at a content of 80 atm % or more in total; and oxygen. The oxide particle has a major axis and a minor axis intersecting the major axis, and has a polygonal tunnel structure including one or more polygonal tunnels of five or more vertices in a major axis direction along the major axis.
Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided.
Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided.
Each magnetic cold storage material particle of the embodiment is composed of an intermetallic compound containing a rare earth element, and an area percentage of voids present in its cross-section is 0.0001% or more and 15% or less. Each of the cold storage device of the embodiment, the refrigerator of the embodiment, and the apparatuses provided with this refrigerator, such as a superconducting magnet, includes the magnetic cold storage material particles of the embodiment.
A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200° C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15° C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600° C. and not more than 950° C., and a process of cooling the stacked body from the bonding temperature to 200° C. at an average temperature lowering rate of the stacked body of not less than 15° C./min. A ceramic substrate is favorably a silicon nitride substrate.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/16 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
9.
TUNGSTEN WIRE, AND TUNGSTEN WIRE PROCESSING METHOD AND ELECTROLYTIC WIRE USING THE SAME
According to one embodiment, a tungsten wire includes a tungsten alloy containing rhenium. The tungsten wire includes a protrusion peak density (Spd) of 7000 or more and 11000 or less as a surface roughness parameter.
To provide an X-ray ceramic scintillator array as well as a radiation detector and a radiation inspection apparatus using the same, which prevents a resin used for a reflective layer of the scintillator array from being colored due to X-ray irradiation so as to realize a significant improvement against the output drop of the scintillator array. The resin used for the reflective layer of the X-ray ceramic scintillator array has a feature wherein a ratio of absorption intensity in a wavenumber range of 1490 cm−1 to 1750 cm−1 to absorption intensity in a wavenumber range of 2500 cm−1 to 2990 cm−1 has a value that falls within a specific range in an absorption spectrum based on Fourier transform infrared spectrometry (FT-IR).
Provided is a fluorescent plate configured to convert X-rays to visible light, the fluorescent plate having a first layer, a second layer, and a phosphor-containing third layer disposed between the first layer and the second layer, wherein the phosphor comprises europium-activated barium fluorochloride, the weight of the phosphor is 300 mg/cm2to 600 mg/cm2, and the first layer and the second layer each have a total light transmittance of at least 70% at the 380 nm emission wavelength of the phosphor.
C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
C09K 11/61 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
G01T 1/20 - Measuring radiation intensity with scintillation detectors
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
A silicon nitride sintered body having improved wear resistance and a wear-resistant member using the silicon nitride sintered body are provided. A silicon nitride sintered body according to an embodiment includes silicon nitride crystal grains and a grain boundary phase. An average value of solid solution oxygen amounts of the silicon nitride crystal grains in a 20 μm×20 μm region at any cross section is not less than 0.2 wt %. In a 50 μm×50 μm region at any cross section, an average value of major diameters of the silicon nitride crystal grains is not less than 0.1 μm and not more than 10 μm, and an average value of aspect ratios of the silicon nitride crystal grains is not less than 1.5 and not more than 10.
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
13.
MATERIAL FOR CERAMIC BALL, DEVICE FOR PROCESSING CERAMIC FORMED BODY, AND METHOD FOR PROCESSING CERAMIC FORMED BODY
A material for a ceramic ball according to the present embodiment is characterized in that a deviation from spherical form is 2% or less, and an arithmetic mean roughness Ra is 0.2 μm to 2 μm inclusive. Moreover, in the material for a ceramic ball, a maximum cross-sectional height Rt is preferably 4 μm to 20 μm inclusive. Furthermore, in the material for a ceramic ball, Ra1/Ra2 is preferably 0.2 to 2, where Ra1 is the surface roughness Ra in a circumferential direction of a belt-like mark, and Ra2 is the surface roughness Ra of a circumference in a direction perpendicular to the belt-like mark.
B24B 11/02 - Machines or devices designed for grinding spherical surfaces or parts of spherical surfaces on work; Accessories therefor for grinding balls
C04B 35/10 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
C04B 35/48 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zirconium or hafnium oxides or zirconates or hafnates
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
14.
BONDED BODY, CERAMIC CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
Provided is a ceramic circuit board that is capable of suppressing a decrease in conductivity of a copper plate while maintaining bonding strength. A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer that bonds the ceramic substrate and the copper plate. The bonding layer contains Ag, Cu, an active metal, and a first element. The first element is one or two selected from Sn and In. As determined by SEM-EDX analysis of an arbitrary cross section, when a point at which a detection amount of Cu is not less than 80 mass% and at which a change in slope in a graph of the detection amount of Cu is the largest is assumed to be a first measurement point, a detection amount of the first element (mass%)/a detection amount of Ag (mass%) at the first measurement point is within the range of 0-0.4. The detection amount of the first element (mass%)/the detection amount of Ag (mass%) at the first measurement point is preferably within the range of 0.05-0.2.
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
Provided are: a ceramic copper circuit board in which the average length RSm of the roughness curve element on the surface of a copper member is controlled; and a semiconductor device using same. A ceramic copper circuit board according to an embodiment of the present invention comprises a ceramic substrate and a copper member bonded to one surface of the ceramic substrate. When the average length RSm of the roughness curve element is measured at each of five arbitrary points selected from the surface of the copper member, the average value of the five average lengths RSm is 40-250 μm.
A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.
A method may produce a heat regenerating material particle, including: preparing a slurry by adding a powder of the heat regenerating substance to an alginic acid aqueous solution and mixing the powder of the heat regenerating substance and the aqueous alginic acid solution; and forming a particle by gelling the slurry by dropping the slurry into a gelling solution. The gelling solution may include a metal element including calcium (Ca), manganese (Mn), magnesium (Mg) beryllium (Be), strontium (Sr), aluminum (Al), iron (Fe), copper (Cu), nickel (Ni), and cobalt (Co). The forming may involve controlling the gelation time so that a concentration of the metal element in a first region of the particle becomes lower than a concentration of the metal element in a second region. The second region may be closer to an outer edge of the particle compared to the first region.
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
18.
METHOD FOR PRODUCING A TWO-STAGE HEAT REGENERATING CRYOGENIC REFRIGERATOR
A method may produce a two-stage heat regenerating cryogenic refrigerator including a vacuum vessel, first and second cylinder disposed in the vessel, the second cylinder coaxially connected to the first cylinder, and first and second regenerator respectively disposed in the first and second cylinder. The method may include: accommodating a first heat regenerating material (HRM) in the first regenerator; and filling a plurality of HRM particles in the second regenerator. The HRM particles may be a second HRM, each of the HRM particles including an oxide or oxysulfide heat regenerating substance having a maximum value of specific heat at a temperature of ≤20 K of 0.3+ J/cm3·K and Ca, Mn, Mg, Be, Sr, Al, Fe, Cu, Ni, and/or Co. Each of the HRM particles may include a first and second region, the second region being closer to an HRM particle outer edge than the first region.
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
19.
RHENIUM-TUNGSTEN WIRE ROD AND THERMOCOUPLE USING THE SAME
The rhenium tungsten wire rod according to an embodiment is a wire rod made of a tungsten alloy containing rhenium, wherein a rhenium content is less than 30 wt % in any measurement area of a wire rod body where a unit area is 1 μm in diameter.
H10N 10/854 - Thermoelectric active materials comprising inorganic compositions comprising only metals
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
A ceramic substrate according to the embodiments is characterized by having two or more peaks in the 98-106 eV range in a spectrum obtained by measuring a laser irradiation region of a laser machining surface via XPS. Also provided are a ceramic circuit substrate and a semiconductor device comprising the ceramic substrate, and manufacturing methods for the ceramic circuit substrate and a ceramic divided substrate.
According to the embodiment, in a method for manufacturing a ceramic circuit board in which a copper plate is bonded to at least one surface of a ceramic substrate via a brazing material layer, the brazing material layer does not include Ag, but includes Cu, Ti, and one or two of Sn or In, and a ceramic circuit board is prepared in which a portion of the brazing material layer is exposed between the patterned configuration of the copper plate. The method includes a chemical polishing process of chemically polishing the portion of the brazing material layer, and a brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant that includes one or two selected from hydrogen peroxide and ammonium peroxodisulfate and has a pH of not more than 6.
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
H05K 3/26 - Cleaning or polishing of the conductive pattern
22.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Producing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 μm×20 μm region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm−1 and not more than 1200 cm−1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm−1 and not more than 525 cm−1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm−1 and not more than 830 cm−1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm−1 and not more than 460 cm−1.
F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
23.
MATERIAL FOR CERAMIC BALL, METHOD FOR PRODUCING CERAMIC BALL USING SAME, AND CERAMIC BALL
A material for a ceramic ball according to an embodiment of the present invention comprises a spherical part and a band-shaped part formed over the circumference of the surface of the spherical part. Rab/Rap, which is the ratio of the arithmetic average roughness Rab of the band-shaped part to the arithmetic average roughness Rap that is an extreme of the spherical part, is 0.7-1.0. Any substance from among aluminum oxide, silicon nitride, silicon carbide, boron nitride, and zirconium oxide can be applied for the ceramic. A ceramic ball is produced by performing a polishing process on the material for a ceramic ball.
Provided is a ceramic circuit substrate having a favorable adhesion with a mold resin. A ceramic circuit substrate according to an embodiment of the present invention comprises a ceramic substrate and a plurality of metal parts. The ceramic substrate has a first surface. The plurality of metal parts are respectively provided in a plurality of first regions of the first surface. The first surface has a second region positioned between the adjacent first regions. The average length RSm of roughness curve elements in the second region is 40 μm or more. The average length RSm is preferably 100 μm or less. The maximum peak height Rp of the roughness curve for the surface in the second region is preferably 1.0 μm or more. The maximum valley depth Rv of the roughness curve for the surface in the second region is preferably 1.0 μm or more.
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm−1 to 810 cm−1 and 1340 cm−1 to 1370 cm−1, and four to six peaks are detected in ranges of 170 cm−1 to 190 cm−1, 607 cm−1 to 627 cm−1, 720 cm−1 to 740 cm−1, and 924 cm−1 to 944 cm−1.
A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 μm or more and 40 μm or less, and the second reflective layer having a film configured to reflect light.
A ceramic circuit board includes a ceramic substrate and a metal plate bonded together via a bonding layer, wherein when the ceramic circuit board is observed through a cross-section defined by a thickness direction and lateral direction of the ceramic circuit board: a side surface of the metal plate has an inclined shape; and the bonding layer has a bonding-layer protruding portion which protrudes by 20 μm or more and 150 μm or less from an edge where the bonding layer is in contact with the side surface of the metal plate. The shape and Vickers hardness of the side surface of the metal plate are controlled. The ceramic substrate is preferably a silicon nitride substrate.
A tungsten wire according to an embodiment is a tungsten wire made of a W alloy containing rhenium, and includes a mixture on at least a part of a surface thereof, the mixture contains W, C, and O as constituent elements, and taking a radial cross-sectional thickness of the mixture as A mm and a diameter of the tungsten wire as B mm, an average value of a ratio A/B of A to B is 0.3% to 0.8%.
C22C 27/04 - Alloys based on tungsten or molybdenum
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
B22F 3/14 - Both compacting and sintering simultaneously
B22F 3/24 - After-treatment of workpieces or articles
C22F 1/02 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
C22F 1/18 - High-melting or refractory metals or alloys based thereon
C25F 3/26 - Polishing of heavy metals of refractory metals
B21B 1/18 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling wire or material of like small cross-section in a continuous process
29.
TUNGSTEN OXIDE POWDER AND ELECTROCHROMIC DEVICE USING THE SAME
According to one embodiment, provided is a tungsten oxide powder including primary particles having an average particle size of 100 nm or less. Each of the primary particles include a crystal phase and an amorphous phase coexisting in each primary particle.
C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
30.
CERAMIC CIRCUIT SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A ceramic circuit substrate according to an embodiment comprises: a ceramic substrate; a metal circuit; and a metal member. The metal circuit is provided on one surface of the ceramic substrate. The thickness of the metal circuit is 1 mm or more. The metal member is provided on the other surface of the ceramic substrate. The thickness of the metal member is 1 mm or more. The ratio Vf/Vb of a total volume Vf of the metal circuit to a total volume Vb of the metal member is 0.80-1.20.
According to an embodiment, a ceramic copper circuit board in which the reliability of bonding with a bonding layer is improved is provided, and an insulating circuit board includes an insulating substrate and a conductor part bonded to at least one surface of the insulating substrate. In XPS analysis of a nitrogen amount at the conductor part surface, an average value of the nitrogen amount at any three locations is within a range of not less than 0 at % and not more than 50 at %. In XPS analysis of the oxygen amount at the conductor part surface, the average value of the three locations is favorably within the range of not less than 3 at % and not more than 30 at %. The ratio of the nitrogen amount to the oxygen amount is favorably not less than 0 and not more than 5.
A ceramic circuit board according to an embodiment comprises a ceramic substrate and metal sheets joined to either surface of the ceramic substrate. At least one of the metal sheets joined to either surface of the ceramic substrate is a cooling path metal sheet having a cooling path part. The thickness of the ceramic substrate is preferably less than the thickness of the cooling path metal sheet. It is preferable that the ceramic substrate comprises a first ceramic substrate and a second ceramic substrate which is joined to a metal sheet joined to the first ceramic substrate, wherein one surface of the second ceramic substrate is joined to a cooling path metal sheet joined to the first ceramic substrate, and a metal sheet is joined to the other surface of the second ceramic substrate.
According to the embodiment, in an insulating circuit board in which a conductor part is bonded to at least one surface of an insulating substrate, in XPS analysis of the carbon amount at the surface of the conductor part, the average value of the carbon amounts at any three locations is within the range of not less than 0 at % and not more than 70 at %. In XPS analysis of the oxygen amount of the conductor part surface, it is favorable for the average value of any three locations to be within the range of not less than 3 at % and not more than 50 at %.
A ceramic ball material according to the present embodiment includes a spherical portion, and a band-shaped portion formed over a circumference of a surface of the spherical portion. The band-shaped portion has a width in a range of 0.5 mm or more and 4.0 mm or less, both shoulders of which are provided with an R section having a radius of curvature of 0.02 mm or more. Any one of aluminum oxide, silicon nitride, boron nitride, and zirconium oxide is used as the ceramic.
B28B 3/02 - Producing shaped articles from the material by using presses; Presses specially adapted therefor wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form
CERAMIC SCRIBE SUBSTRATE, CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SCRIBE SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
A ceramic scribe substrate according to the present embodiment includes a continuous groove having multiple grooves connected to each other formed by fiber laser irradiation on a surface portion of a scribe line shaping a ceramic substrate. The continuous groove has a depth of more than 50 μm within a range of 0.15 times or more and 0.55 times or less a thickness of the ceramic substrate.
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
36.
BORON NITRIDE PLATE SURFACE TREATMENT METHOD, METHOD FOR PRODUCING CERAMIC SINTERED BODY, AND METHOD FOR PRODUCING BORON NITRIDE PLATE
A boron nitride plate surface treatment method according to an embodiment comprises a first polishing step and a second polishing step. In the first polishing step, a surface of a boron nitride plate is polished using a first polishing member having a grit in the range of F120 to F220 inclusive, or #240 to #320 inclusive. In the second polishing step, said surface of the boron nitride plate is polished using a second polishing member having a grit in the range of #360 to #1000 inclusive. The second polishing step is performed after the first polishing step. The boron nitride plate is suitable for a method for manufacturing a silicon nitride substrate. In the first polishing step, a pressing amount of the first polishing member preferably lies in the range of 0.2 mm to 1.0 mm inclusive, and a processing point speed preferably lies in the range of 80 mm/s to 180 mm/s inclusive.
B24B 1/00 - Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B28B 11/08 - Apparatus or processes for treating or working the shaped articles for reshaping the surface, e.g. smoothing, roughening, corrugating, making screw-threads
C04B 35/583 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on boron nitride
A material for a ceramic ball according to an embodiment of the present invention comprises a spherical part and a band-form part formed over the circumference of the surface of the spherical part. Rtb/Rts, which is the ratio of the maximum cross-sectional height Rtb of a roughness curve pertaining to the outer peripheral surface of the band-form part and the roughness maximum cross-sectional height Rts pertaining to the outer peripheral surface of the spherical part, is 1.0 or greater. Any diameter of the spherical part is preferably 0.5 mm or greater. Additionally, the material for the ceramic ball preferably contains any one of aluminum oxide, silicon nitride, silicon carbide, boron nitride, and zirconium oxide.
444 ions on the wire surface/the weight of the alloy wire, is no more than 10 mass ppm. A medical needle and a probe pin according to an embodiment use the rhenium tungsten alloy wire according to the embodiment.
A rhenium-tungsten alloy wire according to an embodiment is formed of a tungsten alloy containing rhenium, in which, in an arbitrary measurement area in which a unit area on the wire surface is 50 µm in diameter, a ratio W/Re between an atomic concentration (atm%) of tungsten (W) and an atomic concentration (atm%) of rhenium (Re) obtained by the XPS analysis is 2.5 or greater. The rhenium-tungsten alloy wire according to the embodiment is used in a medical needle according to an embodiment.
COLD STORAGE MATERIAL, COLD STORAGE MATERIAL PARTICLE, GRANULATED PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSING DEVICE
A cold storage material of an embodiment includes a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and a first group element of 0.001 atom % or more and 10 atom % or less, in which a maximum value of volume specific heat in a temperature range of 2 K or more and 10 K or less is 0.5 J/(cm3·K) or more.
G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
F25B 9/14 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the cycle used, e.g. Stirling cycle
Provided are a silicon nitride sintered body having improved wear resistance and a wear-resistant member in which the silicon nitride sintered body is used. A silicon nitride sintered body according to an embodiment of the present embodiment comprises silicon nitride crystal grains and a grain boundary phase. In a 20 µm × 20 µm region of an arbitrary cross-section, the average value of the amount of solute oxygen in the silicon nitride crystal grains is 0.2 wt% or more. In a 50 µm × 50 µm region of an arbitrary cross-section, the average value of the major axis of the silicon nitride crystal grains is from 0.1 µm to 10 µm, and the average value of the aspect ratio of the silicon nitride crystal grains is from 1.5 to 10.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
TOSHIBA MATERIALS CO., LTD. (Japan)
Inventor
Tajima Kazuki
Fukushi Daisuke
Saito Shuichi
Abstract
This tungsten oxide paint for an electrochromic element is a paint for forming a tungsten oxide thin film having electrochromic properties, the paint being characterized by comprising a solvent, tungsten oxide nanoparticles dispersed in the solvent, and a binder, wherein: in the tungsten oxide nanoparticles, a half maximum full-width of the peak detected at 29°±1° as measured by the X-ray diffraction analysis (2θ) is at most 2°; and tungsten oxide nanoparticles have a primary particle size of 5-25 nm.
G02F 1/1516 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising organic material
44.
COLD STORAGE MATERIAL PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND METHOD FOR PRODUCING COLD STORAGE MATERIAL PARTICLE
A cold storage material particle of an embodiment includes at least one first element selected from the group consisting of a rare earth element, silver (Ag), and copper (Cu) and a second element that is different from the first element and forms a multivalent metal ion in an aqueous solution, in which an atomic concentration of the second element is 0.001 atomic % or more and 60 atomic % or less, and a maximum value of volume specific heat at a temperature of 20K or less is 0.3 J/cm3·K or more.
C09K 5/14 - Solid materials, e.g. powdery or granular
F28D 20/00 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or
G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
C04B 35/50 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
C04B 35/45 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on copper oxide or solid solutions thereof with other oxides
C04B 35/626 - Preparing or treating the powders individually or as batches
C04B 35/636 - Polysaccharides or derivatives thereof
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.
A cold storage material according to an embodiment comprises: a rare earth oxysulfide including a rare earth element; a garnet-type rare earth oxide including a rare earth element and Al; and aluminum oxide, wherein the ratio of an X-ray diffraction peak intensity of the garnet-type rare earth oxide to an X-ray diffraction peak intensity of the rare earth oxysulfide is 0.1% to 40%.
National University Corporation Nara Institute of Science and Technology (Japan)
Inventor
Usui, Daichi
Hayashi, Makoto
Yanagida, Takayuki
Kawaguchi, Noriaki
Kato, Takumi
Nakauchi, Daisuke
Kimura, Hiromi
Abstract
A ceramic scintillator according to the present embodiment has a composition represented by (Lu1-xPrx) a (Al1-yGay) bO12, wherein x, y, a, and b in the composition respectively satisfy 0.005≤x≤0.025, 0.3≤y≤0.7, 2.8≤a≤3.1, and 4.8≤b≤5.2.
According to an embodiment of the present invention, a ceramic scribe substrate comprises, on the surface side of a scribe line for forming a ceramic substrate of a ceramic circuit substrate to which a metal circuit is joined, a continuous groove in which a plurality of grooves are connected by irradiation with a fiber laser. The depth of the continuous groove is more than 40 [μm], and falls within the range of 0.15-0.5 times the thickness of the ceramic substrate.
A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
H01L 23/373 - Cooling facilitated by selection of materials for the device
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
50.
BONDED BODY, CERAMIC CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
According to the embodiment, a bonded body includes a ceramic substrate, a copper plate. A bonding layer is located on at least one surface of the ceramic substrate. The bonding layer bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer including titanium nitride or titanium oxide as a major component, and a plurality of first alloys positioned between the Ti reaction layer and the copper plate. Each of the plurality of first alloys includes at least one selected from a Cu—Sn alloy and a Cu—In alloy. The first alloys have mutually-different Sn concentrations or In concentrations. According to the embodiment, a warp amount can be reduced. A heating rate and a cooling rate in the bonding process can be increased. According to the embodiment, a silicon nitride substrate is favorable for the ceramic substrate.
This ceramic ball storage tray includes a storage part for storing a ceramic ball. The storage part of the ceramic ball storage tray includes a protruding part configured such that the center of a bottom surface of the storage part is hollow. Furthermore, the height of an outer peripheral surface of the protruding part relative to the diameter of the ceramic ball is within the range of 0.05-0.30. It is preferred that the height of the storage part relative to the diameter of the ceramic ball be within the range of 1.05-2.00. It is also preferred that the height of an inner peripheral surface of the protruding part relative to the diameter of the ceramic ball be within the range of 0.01-0.10.
B65D 85/00 - Containers, packaging elements or packages, specially adapted for particular articles or materials
B65D 1/36 - Trays or like shallow containers with moulded compartments or partitions
B65D 85/58 - Containers, packaging elements or packages, specially adapted for particular articles or materials for ball bearings, washers, buttons or like spherical or disc-shaped articles
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
G21F 1/04 - Concretes; Other hydraulic hardening materials
C04B 28/02 - Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing hydraulic cements other than calcium sulfates
C04B 40/00 - Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
G21F 3/00 - Shielding characterised by its physical form, e.g. granules, or shape of the material
54.
BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (MTi/ME1) being 0.1 or less.
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.
A ceramic copper circuit board according to one embodiment of the present invention is provided with: a ceramic substrate; and a copper circuit part that is bonded to at least one surface of the ceramic substrate, with a brazing material layer being interposed therebetween. The brazing material layer contains Cu, Ti, and one or two elements that are selected from among Sn and In. The brazing material layer comprises: a bonding part that is provided between the ceramic substrate and the copper circuit part; and a first protrusion part that is provided around the bonding part, and has a titanium content within the range from 70% by mass to 100% by mass. It is preferable that the sum of the titanium content and the nitrogen content in the first protrusion part is within the range from 99% by mass to 100% by mass.
According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.
C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
C04B 35/597 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon oxynitrides
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
59.
MATERIAL FOR CERAMIC BALL, CERAMIC BALL, AND PRODUCTION METHOD THEREFOR
The material for a ceramic ball according to an embodiment of the present invention has a spherical surface section and a band-shaped section that is formed in the shape of a band. The material for a ceramic ball is characterized by having a roundness C in the range of more than 0% but not more than 2.5%, where C represents a roundness as observed from the height direction of the band-shaped section. When the material for a ceramic ball is subjected to a grinding process, the durability of the sharpening stone can be improved. In addition, at least one of aluminum oxide, silicon nitride, boron nitride, and zirconium oxide is applicable as the ceramic.
A magnetic component 8 of an embodiment has a hollow container 1 made of resin in which a doughnut-shaped magnetic core 5 is housed, wherein the resin of which the hollow container 1 is formed exhibits a white to gray color having a chromatic value C of 0 (achromatic) to 2 inclusive, and a lightness V of 8 or more as defined by JIS Z8721: "Colour specification − Specification according to their three attributes". Further, the hollow container 1 has a structure comprising an inner wall portion 2 formed so as to create a hollow portion 4, an outer wall portion 3 formed so as to surround the inner wall portion 2, and a bottom portion 6 provided at one end of each of the inner wall portion 2 and the outer wall portion 3 so as to close a space between the inner wall portion 2 and the outer wall portion 3, wherein the doughnut-shaped magnetic core 5 is housed in the space between the inner wall portion 2 and the outer wall portion 3.
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
0.8≤ dA/dB≤ 1.2; and
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
0.8≤ dA/dB≤ 1.2; and
0.8≤ rA/rB≤ 1.2.
A silicon nitride sintered body includes at least one black portion with a major axis of 10 μm or more in a field of view with a unit area of 5 mm×5 mm, when observing an arbitrary cross-section of the silicon nitride sintered body using a metallurgical microscope. A major axis of the black portion is Preferably 500 μm or less. The number of the black portion within the field of view with a unit area of 5 mm×5 mm is preferably 2 or more and 10 or less. A segregation portion of Fe is preferably included in the black portion.
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
A friction stir welding tool member including a shoulder portion and a probe portion has a helical recessed/protruding portion having peak portions and valley portions on a side circumferential surface of the probe portion. Furthermore, in a cross section through an axis of rotation of the probe portion of the friction stir welding tool member, a difference ratio of the area of parts of the valley portions that are adjacent to one another along an axis parallel to the axis of rotation, among the valley portions, lies in a range of 5% or more to 30% or less. Further, it is preferable that a difference between pitches of parts of the peak portions that are adjacent to one another along the axis parallel to the axis of rotation of the probe portion, among the peak portions, lies in a range of 0.01 mm or more to 0.2 mm or less. Further, it is preferable that a difference between depths of the parts of the peak portions that are adjacent to one another along the axis parallel to the axis of rotation of the probe portion, among the valley portions, lies in a range of 0.01 mm or more to 0.1 mm or less.
B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
65.
GRANULAR PARTICLES FOR COLD STORAGE MATERIAL PARTICLES, COLD STORAGE MATERIAL PARTICLES, COLD STORAGE DEVICE, REFRIGERATING MACHINE, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION-TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSATION APPARATUS
Granular particles for cold storage material particles of an embodiment of the present invention contain: a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, or a rare earth oxide containing at least one of the above-mentioned rare earth elements; and carbon having a concentration of 0.001 wt% to 50 wt%. The relative density of said granular particles is 10% to 50%.
C09K 5/02 - Materials undergoing a change of physical state when used
C09K 5/14 - Solid materials, e.g. powdery or granular
66.
GRANULATED PARTICLE FOR COLD STORAGE MATERIAL PARTICLE, COLD STORAGE MATERIAL PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSING DEVICE
Granular particles for cold storage material particles of an embodiment of the present invention contain: a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, or a rare earth oxide containing at least one of the above-mentioned rare earth elements; and carbon having a concentration of 0.001 wt% to 50 wt%. The relative density of said granular particles is 10% to 50%.
The highly thermally conductive silicon nitride sintered compact according to an embodiment comprises silicon nitride crystal grains and a grain boundary phase. The silicon nitride sintered compact has a heat conductivity of 80 W/(m·K) or more. The average value of solute oxygen levels in the silicon nitride crystal grains present in a unit surface area of 20 μm × 20 μm in an arbitrary cross-sectional surface is 0.2 wt% or less. The average value of major axis diameters of the silicon nitride crystal grains present in a unit surface area of 50 μm × 50 μm in an arbitrary cross-sectional surface is 1 to 10 μm inclusive. The average value of aspect ratios of the silicon nitride crystal grains present in the unit surface area of 50 μm × 50 μm is 2 to 10 inclusive.
The present invention provides: a tungsten wire which is improved in terms of the occurrence of a crack during a wire thinning process by controlling the crystal orientation in a median wire (that has a wire diameter of 0.3 to 1.2 mm); a tungsten wire processing method which uses this tungsten wire; and an electrolysis wire. A tungsten wire according to one embodiment of the present invention is formed of a tungsten alloy that contains rhenium; if a unit area (40 µm × 40 µm) of a cross section in the wire radial direction that is perpendicular to the wire drawing direction, the unit area being at a position that is concentrically within 100 µm from the central axis, is subjected to an EBSD analysis, the proportion of the area occupied by crystal orientations having a misorientation of 15° or less from <101> that is parallel to the wire drawing direction on the IPF map is 70% to 90% of the measurement field of view.
A rubber die for cold isotropic pressure molding according to one embodiment of the present invention has a plate-like shape and is for use in performing a cold isotropic pressure molding process on a molded article. Said rubber die is provided with one or more substantially cylindrical holes formed in at least one surface thereof. In this rubber die, a/b<2.0 is satisfied, where a represents the diameter of the opening of the holes, and b represents the maximum depth of the holes.
B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
B28B 3/00 - Producing shaped articles from the material by using presses; Presses specially adapted therefor
B30B 5/02 - Presses characterised by the use of pressing means other than those mentioned in groups and wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
C09K 5/14 - Solid materials, e.g. powdery or granular
F25B 21/00 - Machines, plants or systems, using electric or magnetic effects
H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
71.
COLD STORAGE MATERIAL, REFRIGERATOR, DEVICE INCORPORATING SUPERCONDUCTING COIL, AND METHOD OF MANUFACTURING COLD STORAGE MATERIAL
A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
C09K 5/14 - Solid materials, e.g. powdery or granular
F25B 21/00 - Machines, plants or systems, using electric or magnetic effects
H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
72.
MULTICOMPONENT SYSTEM COMPLEX OXIDE POWDER, ELECTROCHEMICAL DEVICE AND CATALYST USING SAME, AND MULTICOMPONENT SYSTEM COMPLEX OXIDE POWDER PRODUCTION METHOD
The purpose of the present invention is to provide: a multicomponent system complex oxide powder that has high thermal stability, high capacity, high reversible reaction speed of the electrochromic property thereof, and a high catalyst activity; an electrochemical device and a catalyst using the powder; and a method for producing the multicomponent system complex oxide powder. The present invention provides a multicomponent system complex oxide powder that includes oxide particles containing a complex oxide that includes oxygen and compositional metal elements including, at a content proportion of a total of 80 atm% or more, two or more types of hexavalent metal elements and two or more types of pentavalent metal elements. The oxide particles each have a major axis and a minor axis that intersects with the major axis, and each have a polygonal tunnel structure including at least one tunnel that has a shape of a polygon having five or more sides and that is along the major axis.
A bonded object production method according to one embodiment of the present invention involves performing, by using continuous furnace, a process on a laminate that includes a metallic member, a ceramic member, and a brazing material layer disposed therebetween while conveying the laminate. The bonded object production method is characterized by comprising: a step for heating the laminate in an inert atmosphere from 200°C to a bonding temperature at an average temperature increase rate of at least 15°C/min; a step for bonding the laminate in an inert atmosphere at the bonding temperature within a range of 600-950°C; and a step for cooling the laminate from the bonding temperature down to 200°C at an average temperature decrease rate of at least 15°C/min. In addition, the ceramic substrate is preferably a silicon nitride substrate.
B23K 1/19 - Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
74.
PACKAGING CONTAINER FOR TRANSPORTING CERAMIC SUBSTRATES
A packaging container for transporting ceramic substrates according to the present embodiment includes a bottom portion in a rectangular shape, and four side portions connected to four edges of the bottom portion respectively. Side protrusions having a height of 2 mm or more and protruding inward are provided on at least two opposite side portions among the four side portions. The bottom portion is provided with a bottom protrusion having a height of 2 mm or more and protruding inward.
B65D 25/10 - Devices to locate articles in containers
B65D 6/00 - Containers having bodies formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal, plastics, wood or substitutes therefor
75.
TUNGSTEN WIRE, TUNGSTEN WIRE PROCESSING METHOD USING SAME, AND ELECTROLYSIS WIRE
The tungsten wire according to the embodiment comprises a tungsten alloy containing rhenium, wherein the vertex density of peaks (Spd), which is a surface roughness parameter, is 7,000-11,000.
Provided are a magnetic cold storage material particle exhibiting low breakage rate even when long-term vibration by operation of a refrigerating machine is applied in an extremely low temperature range, a cold storage device wherein the refrigerating performance does not lower even under long-term operation due to inclusion of same, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet. A magnetic cold storage material particle according to an embodiment of the present invention comprises an intermetallic compound containing a rare earth element, wherein the area ratio of voids located in a cross section thereof is 0.0001% to 15% inclusive. A cold storage device, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet according to an embodiment of the present invention include the magnetic cold storage material particle according to the embodiment.
C09K 5/14 - Solid materials, e.g. powdery or granular
A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
G01N 24/00 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
Provided are a magnetic cold storage material particle exhibiting low breakage rate even when long-term vibration by operation of a refrigerating machine is applied in an extremely low temperature range, a cold storage device wherein the refrigerating performance does not lower even under long-term operation due to inclusion of same, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet. A magnetic cold storage material particle according to an embodiment of the present invention comprises an intermetallic compound containing a rare earth element, wherein the area ratio of voids located in a cross section thereof is 0.0001% to 15% inclusive. A cold storage device, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet according to an embodiment of the present invention include the magnetic cold storage material particle according to the embodiment.
C09K 5/14 - Solid materials, e.g. powdery or granular
A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
G01N 24/00 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
A silicon nitride sintered body according to an embodiment of the present invention is provided with silicon nitride crystal particles and a grain boundary phase, wherein when a 20 μm × 20 μm region in a central cross-section of the silicon nitride sintered body is subjected to Raman spectroscopic analysis, two or more peaks are detected in the range of 780 cm-1to 810 cm-1and 1340 cm-1to 1370 cm-1, and four to six peaks are detected in the ranges of 170 cm-1to 190 cm-1, 607 cm-1to 627 cm-1, 720 cm-1to 740 cm-1, and 924 cm-1to 944 cm-1.
F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
The present invention provides a method for producing a ceramic circuit board in which a copper plate is joined to at least one surface of a ceramic substrate via a brazing material layer, said method being characterized in that the brazing material layer contains no Ag and contains one or two from among Sn or In, and Cu and Ti, and in that said method comprises: a chemical polishing step for preparing a ceramic circuit board in which a portion of the brazing material layer is exposed between pattern shapes of the copper plate, and chemically polishing the portion of the brazing material layer; and a brazing material etching step for etching the portion of the chemically polished brazing material layer with an etchant of pH 6 or less which contains one or two substances selected from hydrogen peroxide and ammonium peroxodisulfate.
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
80.
SILICON NITRIDE SINTERED BODY, WEAR-RESISTANT MEMBER, AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED BODY
This silicon nitride sintered body according to an embodiment is characterized by: including silicon nitride crystal particles and a grain boundary phase; and showing seven or more peaks detected in the range from 400 cm-1to 1200 cm-1when a 20 μm × 20 μm region in an arbitrary cross section of the silicon nitride sintered body is analyzed using Raman spectroscopy, where the strongest peak of the seven of more peaks is not found in the range from 515 cm-1to 525 cm-1. Also, at least three of the seven or more peaks are preferably in the range from 530 cm-1to 830 cm-1. At least one of the seven or more peaks is preferably in the range from 440 cm-1to 460 cm-1.
F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japan)
TOSHIBA MATERIALS CO., LTD. (Japan)
Inventor
Nakayama, Kohichi
Nittoh, Koichi
Sonoda, Yukio
Fukuta, Yukihiro
Abstract
According to an embodiment, a radiation-scintillated shield which attenuates an incident radiation, includes a shielding part containing an activator-added gadolinium compound as an aggregate. The activator uses the gadolinium compound as a base material and emits light when struck by the radiation. Consequently, it becomes possible to shield a γ-ray and a neutron with a thickness which is about the same as that of a conventional concrete shield of γ-ray shield, and to confirm leakage of radiation.
Provided is tungsten oxide powder having an average diameter of primary particles less than or equal to 100 nm, characterized in that the crystalline phase and the amorphous phase coexist in the primary particles of the tungsten oxide powder. Furthermore, preferably, the amorphous phase exists along 80%-100% of the perimeter of the crystalline phase in the primary particles. Furthermore, preferably, the amorphous phase exists along 100% of the perimeter of the crystalline phase in the primary particles. An electrochromic element using such tungsten oxide powder makes it possible to improve response speed and coloring efficiency.
A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 μm in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 μm is favorably not more than 1%.
Provided are a scintillator array with which X-ray radiation coloring of resin employed in a reflective layer of an X-ray ceramic scintillator array is suppressed, thereby significantly improving a reduction in the output of the scintillator array, and a radiation detector and a radiation inspecting device employing the scintillator array. As a feature with which the resin for use in the reflective layer of the X-ray ceramic scintillator array is to be provided, in the resin that is employed a ratio between an absorption intensity in a wavenumber range of 1490 cm-1to 1750 cm-1and an absorption intensity in a wavenumber range of 2500 cm-1to 2990 cm-1, in an absorption spectrum obtained by means of Fourier transform infrared spectroscopy (FT-IR) of the resin, is a value lying in a specific range.
G01T 1/20 - Measuring radiation intensity with scintillation detectors
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
85.
BRAZING MATERIAL, BONDED BODY, CERAMIC CIRCUIT BOARD, AND METHOD FOR MANUFACTURING BONDED BODY
According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
By a homogenizing the amount of Re content in an arbitrary cross-section of a ReW wire rod body, it is possible to achieve a ReW wire rod which ensures mechanical properties without variation in material quality and which greatly contributes to improving stability of thermo-electromotive force. For ReW, normally a powder alloy method is adopted which involves mixing powder, and forming and sintering the same. Because ReW sintering is advanced by means of solid phase expansion, phase regions (σ-phase segregated phase) with a locally high Re composition ratio occur due to powder particle size distribution, mixing state, or forming/sintering conditions. When a sintered body with a large amount of variation in such a Re composition is processed into rods or wire (wire rods), non-homogeneity resulting from Re amount variation (fluctuation) occurs in the processing direction cross-section and axial-direction perpendicular cross-section. This rhenium tungsten wire rod is formed from a tungsten alloy containing rhenium, wherein the rhenium content in an arbitrary measurement area with a 1 μm diameter unit surface area in the wire rod body is less than 30 wt%.
A tungsten wire according to one embodiment is formed of a W alloy that contains Re, while having a mixture in at least a part of the surface thereof; the mixture contains W, C and O as constituent elements; and if A (mm) is the cross-sectional thickness of the mixture in the radial direction and B (mm) is the diameter of the tungsten wire, the average of the ratio of A to B, namely the average of A/B is 0.3% to 0.8%.
B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
C22C 27/04 - Alloys based on tungsten or molybdenum
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/18 - High-melting or refractory metals or alloys based thereon
C23C 8/12 - Oxidising using elemental oxygen or ozone
C23C 24/08 - Coating starting from inorganic powder by application of heat or pressure and heat
B22F 3/24 - After-treatment of workpieces or articles
B21C 1/00 - Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
B21C 37/04 - Manufacture of metal sheets, rods, wire, tubes, profiles or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of rods or wire
89.
CERAMIC CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME
The present invention is a ceramic circuit board obtained by joining a ceramic board and a metal plate with a joining layer therebetween, and when the ceramic circuit board is observed in a cross-section from the thickness direction and lateral direction of the ceramic circuit board, a side surface of the metal plate has an inclined shape, and the joining layer has a joining-layer protruding section which protrudes 20-150[µm] from an edge where the joining layer is in contact with the side surface of the metal plate. Furthermore, the shape and Vickers hardness of the side surface of the metal plate is controlled. The ceramic board is preferably a silicon nitride board.
A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.
A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 μm or more and 40 μm or less, and the second reflective layer having a film configured to reflect light.
G01N 23/046 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
93.
INSULATED CIRCUIT BOARD AND SEMICONDUCTOR DEVICE IN WHICH SAME IS USED
An embodiment of the present invention provides a ceramic copper circuit board in which the reliability of joining with a joining layer is improved. An insulated circuit board according to this embodiment is characterized in comprising an insulated substrate and a conductor part that is joined to at least one surface of the insulated substrate, the average value of the amount of nitrogen at any three locations when the amount of nitrogen in the conductor part surface undergoes XPS analysis being within the range of 0 at% to 50 at% (inclusive). The average value of the amount of oxygen at the three locations when the amount of oxygen in the conductor part surface undergoes XPS analysis is preferably within a range of 3 at% to 30 at% (inclusive). The ratio of the amount of nitrogen to the amount of oxygen is preferably 0 to 5 (inclusive).
A high-frequency acceleration cavity core is a toroidal core obtained by winding an Fe-based magnetic ribbon having crystals with an average crystal grain size of 1 μm or less, in which a space factor of the Fe-based magnetic ribbon is 40% or more and 59% or less, and a μQf value at 1 MHz is 3×109 Hz or more. The average crystal grain size is preferably 0.1 μm or less. The toroidal core preferably has a portion having a gap portion from an inner diameter to an outer diameter.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 1/153 - Amorphous metallic alloys, e.g. glassy metals
C22C 38/16 - Ferrous alloys, e.g. steel alloys containing copper
C22C 38/12 - Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium or niobium
C22C 38/02 - Ferrous alloys, e.g. steel alloys containing silicon
This ceramic ball material, according to an embodiment of the present invention, comprises: a spherical part; and a band-shaped part formed over the circumference of the surface of the spherical part. The width of the band-shaped part is within a range of 0.5 to 4.0 mm inclusive. Both shoulder sections of the band-shaped part are each equipped with an R section, the radius of curvature of which is at least 0.02 mm. Furthermore, for ceramics, any one of aluminum oxide, silicon nitride, boron nitride and zirconium oxide can be applied.
B24B 11/00 - Machines or devices designed for grinding spherical surfaces or parts of spherical surfaces on work; Accessories therefor
B28B 3/02 - Producing shaped articles from the material by using presses; Presses specially adapted therefor wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form
B28B 11/08 - Apparatus or processes for treating or working the shaped articles for reshaping the surface, e.g. smoothing, roughening, corrugating, making screw-threads
C04B 41/72 - After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only artificial stone involving the removal of part of the materials of the treated articles, e.g. etching
B24B 37/02 - Lapping machines or devices; Accessories designed for working surfaces of revolution
B24B 37/025 - Lapping machines or devices; Accessories designed for working surfaces of revolution designed for working spherical surfaces
This insulating circuit board, in which a conductor part is joined to at least one surface of an insulating substrate, is characterized in that when the amount of carbon on the surface of the conductor part is analyzed by XPS, the average value of three arbitrary places is within a range of 0-70 at%. In addition, it is preferable that when the amount of oxygen on the surface of the conductor part is analyzed by XPS, the average value of three arbitrary places is within a range of 3-50 at%.
H05K 1/09 - Use of materials for the metallic pattern
97.
CERAMIC SCRIBE SUBSTRATE, CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SCRIBE SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
A ceramic scribe substrate according to an embodiment comprises, on the surface side of a scribe line for forming a ceramic substrate, a continuous groove in which a plurality of grooves are connected by irradiating with a fiber laser, wherein the depth of the continuous groove is more than 50 [μm], and falls within the range of 0.15 times to 0.55 times the thickness of the ceramic substrate.
A magnetic ribbon according to an embodiment has a crystallinity degree of 0.05 or higher and 0.4 or lower when the magnetic ribbon is subjected to XRD analysis, the magnetic ribbon being Fe—Nb—Cu—Si—B-base, and the crystallinity degree being expressed by “a peak total area of a crystalline phase”/(“a peak area of an amorphous phase”+“the peak total area of the crystalline phase”). Also, the magnetic ribbon is preferred to have a region in which a KIKUCHI pattern is detected when the crystalline phase is subjected to EBSD analysis. Also, the thickness of the magnetic ribbon is preferred to be 25 μm or less.
The cold storage material according to an embodiment of the present invention includes a rare earth oxysulfide including one or more rare earth elements selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, the cold storage material including 0.001-10 atom% (inclusive) of a first group element, and being such that the maximum value of the specific heat capacity in a temperature range of 2-10 K (inclusive) is 0.5 J/(cm3·K) or greater.
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
C09K 5/14 - Solid materials, e.g. powdery or granular
100.
COLD STORAGE MATERIAL, COLD STORAGE MATERIAL PARTICLE, GRANULATED PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSING DEVICE
The cold storage material according to an embodiment of the present invention includes a rare earth oxysulfide including one or more rare earth elements selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, the cold storage material including 0.001-10 atom% (inclusive) of a first group element, and being such that the maximum value of the specific heat capacity in a temperature range of 2-10 K (inclusive) is 0.5 J/(cm3·K) or greater.
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