Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
• H05K 7/02 - Arrangements of circuit components or wiring on supporting structure
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output

Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
• H05K 7/02 - Arrangements of circuit components or wiring on supporting structure
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output

Abstract

An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
• H05K 7/02 - Arrangements of circuit components or wiring on supporting structure
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output

Abstract

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
• H05K 7/02 - Arrangements of circuit components or wiring on supporting structure
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output

Abstract

A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
• H05K 7/02 - Arrangements of circuit components or wiring on supporting structure
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output