Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that, in some examples, provide a HAMR medium with two soft underlayers (SULs) on opposing sides of a single heatsink layer. For example, a magnetic recording medium is provided that includes a lower SUL on a substrate. The lower SUL is configured and positioned within the medium to provide a first return path for magnetic flux from a magnetic recording head during a write operation. The medium also includes a heatsink layer on the lower SUL and an upper SUL on the heatsink layer. The upper SUL is configured and positioned within the medium to provide a second return path for magnetic flux from the magnetic recording head. A magnetic recording layer is provided on the upper SUL to store information during the write operation. Additional layers or films may be provided as well.
A heat assisted magnetic recording (HAMR) write head contains a main pole, a waveguide, and a near-field transducer containing an antenna disposed between the waveguide and the main pole. A first portion of the antenna includes a layer stack of three or more gold-based component layers that contain a waveguide-side outermost gold-based component layer, a pole-side outermost gold-based component layer, and one or more intermediate gold-based component layers. An intermediate gold-based component layer of the one or more intermediate gold-based component layers includes at least one platinum group metal (PGM) at a maximum total atomic percentage that is greater than a total atomic percentage of the at least one PGM in the waveguide-side outermost gold-based component layer and is greater than a total atomic percentage of the at least one PGM in the pole-side outermost gold-based component layer.
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
G11B 5/48 - Disposition or mounting of heads relative to record carriers
G11B 5/60 - Fluid-dynamic spacing of heads from record carriers
G11B 13/08 - Recording simultaneously or selectively by methods or means covered by different main groups; Record carriers therefor; Reproducing simultaneously or selectively therefrom using near-field interactions or transducing means and at least one other method or means for recording or reproducing
A data storage device is enabled to independently self-format, without requiring a connected host device during the active formatting process. The storage device includes a data interface configured to receive power from the host device or a wall charger, non-volatile storage media, and control circuitry. The control circuitry is configured to receive first power from the host device, receive instructions from the host device to perform a format operation, save the instructions to perform the format operation, and cease receiving the first power from the host device. The control circuitry is further configured to receive second power from the wall charger and, in response to retrieving the saved instructions, initiate the format operation on the non-volatile storage media.
Various illustrative aspects are directed to a data storage device, comprising one or more disks; an actuator mechanism configured to position one or more heads proximate to a corresponding disk surface of the one or more disks; and one or more processing devices. The one or more processing devices comprise read/write circuitry which comprises an asynchronous demodulation module. The asynchronous demodulation module is configured to receive demodulated null burst signals based on the selected head reading servo burst fields of the corresponding disk surface; and output, based on the demodulated null burst signals, a radial position signal, indicative of a radial position of the selected head.
G11B 5/596 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
G11B 5/56 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of adjusting the position of the head relative to the record carrier, e.g. manual adjustment for azimuth correction or track centering
5.
Method to Enhance Spin Torque Layer Performance in a Spintronic Device
The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole (MP), a shield, and a spintronic device disposed between the MP and the shield. The spintronic device comprises a MP notch disposed on the MP, a first spin torque layer (STL), a second STL, a spin kill layer disposed between the first and second STLs, and a shield notch. The spin kill layer prevents spin torque from being transferred between the first STL and the second STL. In a forward stack where electrons flow from the MP to the shield, the MP notch comprises FeCr and the shield notch comprises CoFe. In a reverse stack where electrons flow from the shield to the MP, the MP notch comprises CoFe and the shield notch comprises FeCr.
A data storage device and method for reducing read disturbs when reading redundantly-stored data are provided. In one embodiment, a data storage device is provided comprising a memory and a controller. The memory is configured to redundantly store a plurality of copies of data, wherein the plurality of copies of the data comprise a primary copy of the data and at least one secondary copy of the data. The controller is configured to randomly select one of the plurality of copies of the data instead of selecting the primary copy of the data as a default; and read, from the memory, the randomly-selected one of the plurality of copies of the data. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
Systems and methods for offloading data storage processing tasks from a data storage device to a graphics processing unit data are described. Data storage devices may include a peripheral interface configured to connect to a host system and provide access to a host memory buffer. The data storage device may store task input data to the host memory buffer. The data storage device may notify a processor device including the graphics processing unit to initiate the storage processing task. The processor device may access the task input data from the host memory buffer and store the task output data to the host memory buffer for access by the data storage device.
A multi-actuator hard disk drive includes a lower actuator with a corresponding voice coil motor assembly (VCMA), a coaxial upper actuator with a corresponding VCMA, and a central support plate positioned between the upper and lower VCMAs and to which the upper VCMA is fastened. Use of a central support plate enables some control over the direct and coupled plant transfer functions, while effectively providing a base support structure for the upper VCMA and enabling use of conventionally-sized fasteners.
Various illustrative aspects are directed to a data storage device comprising a storage medium and a head configured to access the storage medium. The head comprises a first write assist element and a second write assist element. Control circuitry for driving the head is configured to apply a first write assist current Im that is synchronized to a write data current Iw to the first write assist element; and to apply a second DC write assist current Imdc to the second write assist element.
A flexible printed circuit (FPC) for a hard disk drive includes a plurality of electrical traces, whereby aggressor traces are isolated from victim traces to avoid crosstalk that could degrade signals. Aggressor traces may be positioned together at one of the edges of each of the top wiring layer and the bottom wiring layer, physically isolated from victim traces. Aggressor traces may be grouped together at either the top wiring layer or the bottom wiring layer, with the victim traces positioned on the layer opposing the aggressor traces. With aggressor and victim traces routed on the same wiring layer, aggressor traces may be routed away from the victim traces with multi-layer routing, by way of vias.
A data storage device and method for host buffer management are provided. In one embodiment, a data storage device is provided comprising a non-volatile memory and a controller. The controller is configured to receive a read command from a host; read data from the non-volatile memory; identify a location in a host memory buffer (HMB) in the host that is available to store the data; write the data to the location in the HMB; and inform the host of the location in the HMB that stores the data. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
The present invention provides a coal-based solid waste transport and filling integrated machine mining system, comprising a filling hydraulic support (6) and a coal winning machine (7), said filling hydraulic support (6) comprises a hydraulic top plate and a base (601), said hydraulic top plate comprises a hinged front top beam (602) and a rear top beam (603), with a front probe beam (604) attached to front end of said front top beam (602) and a telescopic slide rod (1) connected to rear end of said rear top beam (603), a double transport and single filling non-stop equipment is fixed on the telescopic slide rod (1). The apparatus and method of the present invention weaken the impact of groundwater pollution on mine production and mine ecology, bring good economic and environmental benefits to the mine and promoting safe and green coal mining.
E21D 23/04 - Structural features of the supporting construction, e.g. linking members between adjacent frames or sets of props; Means for counteracting lateral sliding on inclined floor
E21F 15/00 - Methods or devices for placing filling-up materials in underground workings
E21F 13/00 - Transport specially adapted to underground conditions
C04B 28/14 - Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing calcium sulfate cements
C04B 18/14 - Waste materials; Refuse from metallurgical processes
C04B 18/24 - Vegetable refuse, e.g. rice husks, maize-ear refuse; Cellulosic materials, e.g. paper
13.
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS
A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming a mask layer over the alternating stack, forming a cavity in the mask layer, forming a first cladding liner on a sidewall of the cavity in the mask layer, and forming a via opening the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavity in the mask layer through the alternating stack using a combination of the first cladding liner and the mask layer as an etch mask.
An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack and cavities are formed in the hard mask layer. A cladding liner is formed on sidewalls of the cavities in the hard mask layer. Via openings are formed through each layer within the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities through the alternating stack.
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11556 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
15.
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS
A method includes forming an alternating stack of first and second layers, forming a composite hard mask layer over the alternating stack, forming openings in the hard mask, and forming via openings through the alternating stack by performing an anisotropic etch process that transfers a pattern of the openings in the composite hard mask layer through the alternating stack. The compositing hard mask includes a first cladding material layer which has higher etch resistance than upper and lower patterning films of the composite hard mask.
H01L 27/1157 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the memory core region with cell select transistors, e.g. NAND
H01L 27/11565 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the top-view layout
H01L 27/11524 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND
H01L 27/11519 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the top-view layout
16.
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS
An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack. Optionally, an additional hard mask layer can be formed over the hard mask layer. A photoresist layer is applied and patterned, and cavities are formed in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer. Via openings are formed through an upper portion of the alternating stack by performing a second anisotropic etch process. A cladding liner can be optionally formed on sidewalls of the cavities in the hard mask layer. The via openings can be vertically extend through all layers within the alternating stack by performing a third anisotropic etch process.
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11556 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11565 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the top-view layout
H01L 27/11519 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the top-view layout
17.
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS
A source-level semiconductor layer and an alternating stack of first material layers and second material layers is formed above a substrate. A hard mask layer is formed over the alternating stack, and is subsequently patterned to provide a pattern of cavities therethrough. Via openings are formed through the alternating stack by performing an anisotropic etch process. A cladding liner is formed on sidewalls of the cavities in the hard mask layer and on a top surface of the hard mask layer. The via openings are vertically extended at least through the source-level semiconductor layer by performing a second anisotropic etch process employing a combination of the cladding liner and the hard mask layer as an etch mask.
An alternating stack of first material layers and second material layers can be formed over a semiconductor material layer. A patterning film is formed over the alternating stack, and openings are formed through the patterning film. Via openings are formed through the alternating stack at least to a top surface of the semiconductor material layer by performing a first anisotropic etch process that transfers a pattern of the openings in the patterning film. A cladding liner can be formed on a top surface of the patterning film and sidewalls of the openings in the pattering film. The via openings can be vertically extended through the semiconductor material layer at least to a bottom surface of the semiconductor material layer by performing a second anisotropic etch process employing the cladding liner as an etch mask.
H01L 23/535 - Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions
H01L 27/11556 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11529 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the peripheral circuit region of memory regions comprising cell select transistors, e.g. NAND
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11573 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the peripheral circuit region
H01L 27/11597 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by three-dimensional arrangements, e.g. cells on different height levels
H01L 27/11592 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the peripheral circuit region
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
19.
Socket interconnector for high pad count memory cards
A memory card socket interconnector is disclosed including a pair of cavities configured to receive a pair of memory cards. The cavities include patterns of memory card interconnect pads. A second surface of the socket interconnector includes socket interconnect pads, distributed across the second surface of the socket interconnector, which are electrically coupled to the memory card interconnect pads. The memory card socket interconnector may further include an anisotropic elastomeric sheet provided between the memory card pads and the memory card interconnect pads in each cavity to enable good electrical contact between the memory card pads and the memory card interconnect pads.
A data storage device includes a controller and a memory die. The controller includes a host interface and a memory interface. A method includes receiving a message from a host device via the host interface. The message indicates that the host device is to perform a first adjustment process associated with the host interface. The method further includes performing a second adjustment process associated with the memory interface in response to receiving the message indicating that the host device is to perform the first adjustment process.
G06F 1/12 - Synchronisation of different clock signals
G06F 1/04 - Generating or distributing clock signals or signals derived directly therefrom
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
G06F 13/42 - Bus transfer protocol, e.g. handshake; Synchronisation
H03M 13/05 - Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
A base member includes a recessed portion extending in radial directions and recessed upward from a lower surface of the base member and a hole extending through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface defining a loop-shaped surface in the radial direction. A connector is located on a lower side of the recessed portion to cover the hole portion. An adhesive is located between the connector and the recessed portion. A minimum value of a gap distance in the radial direction between an outer end of the connector and an inner end of the recessed portion in which the outer end of the connector and the inner end of the recessed portion are opposed to each other with the adhesive therebetween is greater than a minimum value of a gap in the vertical direction distance between an upper surface of the connector and the recessed portion loop-shaped surface, in which the upper surface of the connector and the recessed portion loop-shaped surface are opposed to each other with the adhesive therebetween. The adhesive includes an inorganic filler.
G11B 33/12 - Disposition of constructional parts in the apparatus, e.g. of power supply, of modules
G11B 33/14 - Reducing influence of physical parameters, e.g. temperature change, moisture, dust
G11B 25/04 - Apparatus characterised by the shape of record carrier employed but not specific to the method of recording or reproducing using flat record carriers, e.g. disc, card
G11B 33/02 - Cabinets; Cases; Stands; Disposition of apparatus therein or thereon
A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction or directions parallel to these directions; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion. A minimum value of a gap distance between an outer end of the connector and an inner end of the recessed portion in a radial direction in which the outer end of the connector and the inner end of the recessed portion are opposed to each other with the adhesive therebetween is greater than a minimum value of a gap distance between an upper surface of the connector and the recessed portion loop-shaped surface in the vertical direction, in which the upper surface of the connector and the recessed portion loop-shaped surface are opposed to each other with the adhesive therebetween.
G11B 33/14 - Reducing influence of physical parameters, e.g. temperature change, moisture, dust
G11B 25/04 - Apparatus characterised by the shape of record carrier employed but not specific to the method of recording or reproducing using flat record carriers, e.g. disc, card
G11B 33/02 - Cabinets; Cases; Stands; Disposition of apparatus therein or thereon
G11B 33/12 - Disposition of constructional parts in the apparatus, e.g. of power supply, of modules
23.
Memory die temperature adjustment based on aging condition
A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to the determination, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
G11C 7/04 - Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
G06F 3/06 - Digital input from, or digital output to, record carriers
G11C 16/26 - Sensing or reading circuits; Data output circuits
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
24.
Systems and methods for applying electric fields during ultraviolet exposure of lubricant layers for hard disk media
Systems and methods for applying electric fields during ultraviolet exposure of lubricant layers for hard disk media. One such method involves inserting a magnetic medium into a chamber, the magnetic medium including a lubricant on an outer surface thereof, and applying an electric field and an ultraviolet radiation to the lubricant within the chamber. Another such method involves inserting a magnetic medium into a chamber, depositing a lubricant on the medium within the chamber, and applying an electric field and an ultraviolet radiation to the lubricant within the chamber.
G11B 5/40 - Protective measures on heads, e.g. against excessive temperature
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion. A minimum value of a gap distance between an outer end of the connector and an inner end of the recessed portion in a radial direction in which the outer end of the connector and the inner end of the recessed portion are opposed to each other with the adhesive therebetween is greater than a minimum value of a gap distance between an upper surface of the connector and the recessed portion loop-shaped surface in the vertical direction, in which the upper surface of the connector and the recessed portion loop-shaped surface are opposed to each other with the adhesive therebetween.
G11B 33/14 - Reducing influence of physical parameters, e.g. temperature change, moisture, dust
G11B 33/02 - Cabinets; Cases; Stands; Disposition of apparatus therein or thereon
G11B 33/12 - Disposition of constructional parts in the apparatus, e.g. of power supply, of modules
G11B 25/04 - Apparatus characterised by the shape of record carrier employed but not specific to the method of recording or reproducing using flat record carriers, e.g. disc, card
A base member includes a recessed portion arranged to extend in radial directions and recessed upward from a lower surface of the base member, the radial directions being directions perpendicular to a vertical direction or directions parallel to these directions; and a hole portion arranged to pass through the recessed portion in the vertical direction. The recessed portion includes a recessed portion loop-shaped surface being a loop-shaped surface perpendicular to the vertical direction. A connector is arranged on a lower side of the recessed portion to cover the hole portion. An adhesive is arranged between the connector and the recessed portion. A minimum value of a gap distance between an outer end of the connector and an inner end of the recessed portion in a radial direction in which the outer end of the connector and the inner end of the recessed portion are opposed to each other with the adhesive therebetween is greater than a minimum value of a gap distance between an upper surface of the connector and the recessed portion loop-shaped surface in the vertical direction, in which the upper surface of the connector and the recessed portion loop-shaped surface are opposed to each other with the adhesive therebetween.
G11B 33/14 - Reducing influence of physical parameters, e.g. temperature change, moisture, dust
G11B 33/02 - Cabinets; Cases; Stands; Disposition of apparatus therein or thereon
G11B 33/12 - Disposition of constructional parts in the apparatus, e.g. of power supply, of modules
G11B 25/04 - Apparatus characterised by the shape of record carrier employed but not specific to the method of recording or reproducing using flat record carriers, e.g. disc, card
27.
Device and method to store predicted data at a host memory
A data storage device may be configured to direct access to at least a portion of a host memory of a host device. For example, the data storage device may store data at the host memory, such as data predicted to be subject to a read request from the host device. When the data storage device receives a read request from the host device to read the data, the data storage device may send an indication to the host device to enable the host device to read the data directly from the host memory.
A method of operation in a non-volatile memory system for deferring, in accordance with a determination to reduce power consumption by the non-volatile memory system, execution of commands in a command queue corresponding to a distinct set of non-volatile memory devices during a respective wait period. In some implementations, the respective wait period for a first distinct set of non-volatile memory devices in at least two distinct sets is at least partially non-overlapping with the respective wait period for a second distinct set of non-volatile memory devices in the at least two distinct sets.
Provided is a wireless power transmission apparatus for wirelessly transmitting the power to portable electronic appliances using power or batteries charging power and supplying operation power to the portable electronic appliances. The wireless power transmission apparatus includes first and second source resonators, which are included inside a plurality of resonator bodies and which generates and wirelessly transmits the resonant power to a target resonator. The resonator bodies are formed to be folded to each other on an axis of a hinge.
H02J 17/00 - Systems for supplying or distributing electric power by electromagnetic waves
H02J 5/00 - Circuit arrangements for transfer of electric power between ac networks and dc networks
H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from ac mains by converters
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
30.
Methods and apparatus for performing resilient firmware upgrades to a functioning memory
This invention relates generally to methods and computer readable media for upgrading firmware stored in a non-volatile memory, in phases, and restoring firmware in-situ to compensate for failed firmware upgrades. In various embodiments, methods and computer readable media can upgrade and restore the firmware as the non-volatile memory remains functioning. In one embodiment, a method includes designating a first copy of firmware for accessing, and designating a second copy of the firmware for upgrading. The method continues by accessing one or more firmware instructions from the first copy. It also can include upgrading at least a portion of the second copy with at least a portion of new firmware. Upgrading the second copy can be coincident or substantially coincident to accessing the one or more firmware instructions in the first copy.
Provided is a method in which data is received at the first storage unit. A first information unit, a second information unit, and a third information unit are generated, wherein the first information unit, the second information unit, and the third information unit each include a portion of the received data and computed parity data. The first information unit is stored in the first storage unit at the first site. The second information unit is distributed to the second storage unit at the second site for storage. The third information unit is distributed to the third storage unit at the third site for storage.
patents
