In a method for tuning at least one parameter of a noise cancellation enabled audio system with an ear mountable playback device comprising a speaker and a feedforward microphone the playback device is placed onto a measurement fixture, the speaker facing a test microphone located within an ear canal representation. The parameter is varied between a plurality of settings while a test sound is played. A measurement signal from the test microphone is received and stored in the audio system at least while the parameter is varied. A power minimum in the stored measurement signal and a tune parameter associated with the power minimum are determined in the audio system from the plurality of settings of the varied parameter.
G10L 21/0264 - Noise filtering characterised by the type of parameter measurement, e.g. correlation techniques, zero crossing techniques or predictive techniques
2.
Tuning method, manufacturing method, computer-readable storage medium and tuning system
A method for tuning filter parameters of a noise cancellation enabled audio system with an ear-mountable playback device comprising a speaker and a feedback noise microphone located in proximity to the speaker comprises provision of acoustic transfer functions between the speaker and the feedback noise microphone, between the speaker and an eardrum, between an ambient sound source and the eardrum and between the ambient sound source and the feedback noise microphone. The parameters of a feedback filter function, which is designed to process a feedback noise signal, are tuned. A noise cancellation performance of the audio system at the eardrum is determined based on each of the acoustic transfer functions and on the feedback filter function.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
A circuit for measuring an unknown resistance of a resistive element comprises a sensor circuit to generate a differential voltage dependent on the resistance of the resistive element and a reference circuit to generate a differential reference voltage and a sigma-delta converter comprising a first stage, wherein a first capacitor is selectively coupled to one of the output terminals of the sensor circuit and a second capacitor is coupled to one of the output terminals of the reference circuit. The circuit generates logarithmically compressed values.
G01R 27/14 - Measuring resistance by measuring current or voltage obtained from a reference source
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03M 3/00 - Conversion of analogue values to or from differential modulation
We disclose herein a method for testing and/or calibrating a thermopile based device. The method comprising: applying an electrical bias of a first polarity to the thermopile based device and measuring a first value of an electrical parameter; and applying an electrical bias of a second polarity to the thermopile based device and measuring a second value of an electrical parameter.
G01J 5/12 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
G01R 31/26 - Testing of individual semiconductor devices
We disclose an Infrared (IR) device comprising a first substrate comprising a first cavity; a dielectric layer disposed on the first substrate; a second substrate disposed on the dielectric layer and on the opposite side of the first substrate, the second substrate having a second cavity. The device further comprises an optically transmissive layer attached to one of the first and second substrates; a further layer provided to another of the first and second substrates so that the IR device is substantially closed. Holes are provided through the dielectric layer so that a pressure in the first cavity is substantially the same level as a pressure in the second cavity.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/26 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H05B 3/36 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs heating conductor embedded in insulating material
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.
We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.
H01L 31/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 37/00 - Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
We disclose herein an electronic device comprising: a state machine for receiving an output signal from a sensor; a comparator operatively coupled with the state machine; and a first processor operatively coupled with the comparator. The state machine is configured to receive the output signal from the at least one sensor to obtain sensor measurement data and configured to pass the obtained sensor measurement data to the comparator. The comparator is configured to process the obtained sensor measurement data into first processed sensor data, and configured to compare the first processed sensor data with a first predetermined threshold limit. The comparator is configured to inform the first processor about the obtained sensor measurement data if the first processed sensor data exceed the first predetermined threshold limit.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
G08B 21/12 - Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
G08B 29/16 - Security signalling or alarm systems, e.g. redundant systems
G08B 25/08 - Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using communication transmission lines
We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 37/02 - Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below the Curie point
We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
H01L 31/024 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H01L 37/02 - Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below the Curie point
G01J 5/12 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
patents
