Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a plurality of piezoelectric layers including first and second piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first and second piezoelectric layers may have respective piezoelectric axis orientations. The first and second piezoelectric layers may have respective thicknesses. An example system may comprise an oscillator circuit coupled with the bulk acoustic wave (BAW) resonator. For example, a radar system may comprise the oscillator circuit coupled with the bulk acoustic wave (BAW) resonator.
Techniques for improving structures, acoustic wave resonators, layers, and devices are disclosed, including filters, oscillators and systems that may include such devices. An acoustic wave device of this disclosure may comprise a substrate and a piezoelectric resonant volume. The piezoelectric resonant volume of the acoustic wave device may have a main resonant frequency. The acoustic wave device may comprise a first distributed Bragg acoustic reflector. The first distributed Bragg acoustic reflector may comprise a first active piezoelectric layer. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A Bulk Acoustic Wave (BAW) resonator of this disclosure may comprise a substrate and an active piezoelectric resonant volume. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may have a main resonant frequency. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may comprise first and second piezoelectric layers having respective piezoelectric axis that substantially oppose one another. A first patterned layer may be disposed within the active piezoelectric volume. This may, but need not facilitate suppression of spurious modes. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate. The bulk acoustic wave (BAW) may further comprise a plurality of piezoelectric layers including first, second, third and fourth piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first, second, third and fourth piezoelectric layers may have respective piezoelectric axis orientations. The first, second, third and fourth piezoelectric layers may have respective thicknesses. Electromechanical coupling of the bulk acoustic wave (BAW) resonator may, but need not be limited.
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
10.
Mass loaded bulk acoustic wave (BAW) resonator structures, devices, and systems
Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material having a first piezoelectric axis orientation. The bulk acoustic wave (BAW) resonator may comprise a multi-layer acoustic reflector, e.g., a multi-layer metal top acoustic reflector electrode, including a first pair of top metal electrode layers. The first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite a piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
14.
DOPED BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of doped piezoelectric layer material and a second layer of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of doped piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector including a first pair of metal electrode layers may be electrically and acoustically coupled with the first layer of doped piezoelectric material and the second layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The resonant frequency of the BAW resonator may be in a super high frequency band or an extremely high frequency band.
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.
Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
18.
ACOUSTIC DEVICES WITH LAYER STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An acoustic wave device may include a substrate. The acoustic wave device may include first and second layers of piezoelectric material acoustically coupled with one another, in which the first layer of piezoelectric material has a first piezoelectric axis orientation, and the second layer of piezoelectric material has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The acoustic wave device may include an interposer layer interposed between the first and second layers of piezoelectric material. The interposer may facilitate an enhancement of an electromechanical coupling coefficient of the acoustic wave device.
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
20.
Structures, acoustic wave resonators, devices and systems to sense a target variable, including as a non-limiting example corona viruses
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator.
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of doped piezoelectric layer material and a second layer of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of doped piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector including a first pair of metal electrode layers may be electrically and acoustically coupled with the first layer of doped piezoelectric material and the second layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.
H01L 41/08 - Piezo-electric or electrostrictive elements
H01L 41/22 - Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.
H01L 41/08 - Piezo-electric or electrostrictive elements
H01L 41/22 - Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The resonant frequency of the BAW resonator may be in a super high frequency band or an extremely high frequency band.
H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
26.
MASS LOADED BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.
H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
27.
TEMPERATURE COMPENSATING BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.
H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.
H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
29.
ACOUSTIC DEVICE WITH LAYER STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An acoustic wave device may include a substrate. The acoustic wave device may include first and second layers of piezoelectric material acoustically coupled with one another, in which the first layer of piezoelectric material has a first piezoelectric axis orientation, and the second layer of piezoelectric material has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The acoustic wave device may include an interposer layer interposed between the first and second layers of piezoelectric material. The interposer may facilitate an enhancement of an electromechanical coupling coefficient of the acoustic wave device.
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material having a first piezoelectric axis orientation. The bulk acoustic wave (BAW) resonator may comprise a multi-layer acoustic reflector, e.g., a multi-layer metal top acoustic reflector electrode, including a first pair of top metal electrode layers. The first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite a piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.
