The present invention provides a power conversion circuit that can be operated while suppressing degradation in the properties of a gallium oxide semiconductor. This power conversion circuit at least includes a switching element, and a control unit that detects short-circuiting of the switching element and performs an off-operation for the switching element on the basis of the detection result, wherein the switching element includes a gallium oxide semiconductor, and the control unit controls the off-operation of the switching element such that the time from the occurrence of the short-circuit to the off-operation is less than 1.4 μsec.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
2.
CRYSTAL FILM, AND METHOD FOR PRODUCING CRYSTAL FILM
Provided are: a crystal film which is reduced in dislocation extending along the thickness direction; and a method for producing the crystal film with excellent relative yield. The crystal film has a corundum structure and contains a crystalline oxide containing gallium, and a cross-section of the crystal film which is cut in the thickness direction has a linear first crystal defect extending along the thickness direction and a linear second crystal defect including an inclining part that inclines from the thickness direction, in which an upper end of the first crystal defect is connected to the inclining part or is positioned below the inclining part.
Provided is a power conversion circuit, including: a first switching element and a second switching element connected in parallel to each other; and a control unit configured to control turn-on/off of each of the switching elements, wherein a current value at a cross point of current-voltage characteristics when a forward current flows through the first switching element and current-voltage characteristics when a current flows through the second switching element is greater than a rated current value of the power conversion circuit.
Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer and a drift layer; and a gate electrode arranged over the channel layer across a gate insulating film, and has a current blocking layer between the channel layer and the drift layer. The semiconductor device is characterized in that the drift layer contains a first crystalline oxide as a major component, the current blocking layer contains a second crystalline oxide as a major component, and the first crystalline oxide and the second crystalline oxide have different compositions.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided is a semiconductor device including: at least a semiconductor layer having a corundum structure, the semiconductor layer including a first surface having at least a first side and a second side shorter than the first side, the first surface being a c-plane or an m-plane, a direction of the first side being a direction of a c-axis or a direction of an m-axis.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
7.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
The present invention provides a technology which is capable of enhancing the withstand voltage of a semiconductor device that comprises a semiconductor region or semiconductor layer which contains a crystalline oxide semiconductor containing gallium without having a p-type semiconductor region or semiconductor layer. A semiconductor device according to the present invention is provided with: a semiconductor layer in which a depletion layer extends; and an electrode which is arranged on the semiconductor layer directly or by the intermediary of another layer. The semiconductor layer has a first region that contains, as a main component, a crystalline oxide semiconductor containing gallium and a second region that contains, as a main component, an oxide containing gallium; and the second region has a linear crystal defect region in a cross-section that is perpendicular to the upper surface of the semiconductor layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a technique with which it is possible to increase the breakdown voltage characteristics of a semiconductor region that includes a crystalline oxide semiconductor that includes gallium, or a semiconductor device that has a semiconductor layer, without relying on a p-type semiconductor region or semiconductor layer. This semiconductor device comprises a semiconductor layer, and an electrode that is located directly on the semiconductor layer or with another layer interposed therebetween. The semiconductor layer has a first region that includes as a main component a crystalline oxide semiconductor that includes gallium, and a second region that includes as a main component an oxide that includes gallium, the second region having a lower carrier density than the first region, and at least a portion thereof being positioned at a depth of 1.0 μm or more from an upper surface of the semiconductor layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided a semiconductor device having a structure to suppress hole injections into the gate insulator. A semiconductor device including a gate insulating film, a hole blocking layer placed in contact with the gate insulating film, and an oxide semiconductor layer placed in contact with the hole blocking layer, wherein the hole blocking layer is located between the gate insulating film and the oxide semiconductor layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
10.
DESIGN SUPPORT APPARATUS, DESIGN SUPPORT PROGRAM, AND DESIGN SUPPORT METHOD
Provided a design support apparatus of supporting design of a component embedded substrate including one or more embedded electronic components that configure at least a part of a circuit, including, a component information acquiring unit that acquires component information about the electronic components to be incorporated in the component embedded substrate; and a required minimum area calculating unit that calculates a required minimum area of a surface of the component embedded substrate on the basis of at least information about a size of each electronic component contained in the component information.
An objective of the present invention is to provide a semiconductor device in which an interface deterioration between constituent elements is suppressed. This semiconductor device comprises: a first wiring layer; a holding layer; a first semiconductor element and a second semiconductor element having a greater thickness than the first semiconductor element, the first and second semiconductor elements provided between the first wiring layer and the holding layer; an insulating body in which the first semiconductor element and the second semiconductor element are buried; and a thickness adjuster which is provided between the first semiconductor element and the holding layer, wherein the linear expansion coefficient of the thickness adjuster is a value between the linear expansion coefficient of the first semiconductor element and the linear expansion coefficient of the holding layer.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
The purpose of the present invention is to provide a semiconductor device in which interfacial degradation between constituent elements is suppressed. The semiconductor device comprises: a first wiring layer; a carrying layer; a first semiconductor element and a second semiconductor element that are colocated between the first wiring layer and the carrying layer, the second semiconductor element having a thickness greater than the thickness of the first semiconductor element; an insulator in which the first semiconductor element and the second semiconductor element are embedded; and a thickness adjusting portion provided between the first semiconductor element and the carrying layer. The linear coefficient of expansion of the thickness adjusting portion is a value between the linear coefficient of expansion of the semiconductor element and the linear coefficient of expansion of the insulator.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
The purpose of the present invention is to provide a semiconductor device with improved reliability with respect to heat dissipation and/or electrical connectivity, and the like. This semiconductor device comprises: a first wiring layer; a retention layer; a semiconductor element arranged between the first wiring layer and the retention layer and including at least a semiconductor layer and a first electrode arranged on a first surface of the semiconductor layer; an insulator in which at least part of the semiconductor element is embedded; and a first connection part that electrically connects the first wiring layer and the first electrode. The connection area of the first connection part and the first electrode accounts for 45% or more of the area of an exposed portion of the first electrode.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Provided is a semiconductor device, including: a gate electrode having at least a part buried in a semiconductor layer; a deep p layer having at least a part buried in the semiconductor layer to a same depth as a buried lower end portion of the gate electrode or a position deeper than the buried lower end portion; and a channel layer, wherein: the deep p layer is formed by a crystalline oxide semiconductor; and a carrier concentration of the deep p layer is higher than a carrier concentration of the channel layer.
Provided is a power conversion circuit and a control system in which radiated noise of the entire circuit is reduced. A power conversion circuit including at least: a switching element (e.g. a MOSFET, etc.) and a diode (e.g. a commutating diode, etc.): wherein the power conversion circuit is a single-switch power conversion; and the diode is a gallium oxide-based Schottky barrier diode.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/14 - Arrangements for reducing ripples from dc input or output
17.
CRYSTALLINE OXIDE FILM, MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE
Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
C01G 55/00 - Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
18.
LAYERED STRUCTURE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
Provided are a layered structure, a semiconductor element, and a semiconductor device that are particularly useful in power devices and undergo less degradation at high temperatures. According to the present invention, a layered structure comprises at least: a semiconductor layer that includes a crystalline oxide semiconductor as a principal component; and a conductive substrate on which the semiconductor layer is layered. The conductive substrate includes at least a first metal and a second metal that is different from the first metal. The conductive substrate has, within a plane, a first direction and a second direction that is orthogonal or substantially orthogonal to the first direction. A first coefficient of linear expansion that is the coefficient of linear expansion of the conductive substrate in the first direction is the same or substantially the same as a second coefficient of linear expansion that is the coefficient of linear expansion in the second direction.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides: a multilayer structure which is reduced in deterioration at high temperatures and is useful especially for power devices; a semiconductor element; and a semiconductor device. The present invention provides a multilayer structure which is provided with at least a semiconductor layer that contains, as a main component, a crystalline oxide semiconductor, and a conductive substrate that is superposed on the semiconductor layer, wherein: the multilayer structure has a first direction and a second direction, which is perpendicular or generally perpendicular to the first direction, within a plane that is perpendicular to the stacking direction of the multilayer structure; a first linear expansion coefficient that is the linear expansion coefficient of the conductive substrate in the first direction is lower than a second linear expansion coefficient that is the linear expansion coefficient of the conductive substrate in the second direction; and a third linear expansion coefficient that is the linear expansion of the semiconductor layer in the first direction is lower than a fourth linear expansion coefficient that is the linear expansion coefficient of the semiconductor layer in the second direction.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided are a laminated structure in which there is reduced deterioration at high temperatures and which is particularly useful for power devices, a semiconductor element, and a semiconductor device. The laminated structure comprises at least a semiconductor layer that includes a crystalline oxide semiconductor as the main component, and a conductive substrate laminated on the semiconductor layer, wherein the conductive substrate includes at least a first metal, and a second metal having higher Young's modulus than the first metal, and the mass ratio of the second metal in the conductive substrate is larger than the mass ratio of the first metal.
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided is a semiconductor apparatus that is useful particularly for power devices and that has excellent semiconductor characteristics. This semiconductor apparatus is provided with at least an n-type oxide semiconductor layer, a first p-type oxide semiconductor layer that forms a main junction together with the n-type oxide semiconductor layer, and a hole supply layer, and is characterized in that the hole supply layer is formed of a second p-type oxide semiconductor layer that is different from the first p-type oxide semiconductor layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
H02P 29/024 - Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load
24.
POWER CONVERSION CIRCUIT AND POWER CONVERSION SYSTEM
Provided is a power conversion circuit including at least: a switching element that opens and closes an inputted voltage via a reactor; and a commutating diode that passes a current in a direction of an electromotive force by a voltage including at least the electromotive force generated from the reactor when the switching element is turned off, the commutating diode including a gallium oxide-based Schottky barrier diode.
H02M 7/219 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
Provided is a semiconductor device including: a semiconductor layer; a non-conductive layer that is in contact with at least a part of a side surface of the semiconductor layer directly or via another layer; and a Schottky electrode that is disposed on the semiconductor layer and the non-conductive layer, an end portion of the Schottky electrode being located above the non-conductive layer.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided are a crystal film having excellent crystal quality, and a method for producing a high-quality crystal film with reduced dislocation, that are useful in semiconductor devices or the like. A method for producing a crystal film that includes forming uneven portions composed of recesses or protrusions on a crystal growth plane of a crystal substrate, either directly or with another layer interposed therebetween, and then forming a crystal film, wherein the crystal growth plane is inclined at an angle of less than 90 degrees from the c-plane, and the uneven portions are arranged along a direction parallel to the line of intersection of the crystal growth plane and the c-plane.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
27.
DESIGN ASSISTANCE DEVICE, DESIGN ASSISTANCE PROGRAM, AND DESIGN ASSISTANCE METHOD
Provided are a design assistance device, a design assistance program, and a design assistance method which are capable of determining the necessity of a height adjustment and making a detailed design of a height adjustment member in a short period of time while ensuring a degree of freedom in selecting electronic components when a plurality of electronic components with different heights are disposed on a component-embedded substrate. This design assistance device for an electronic component-embedded substrate comprises: a height difference calculation unit which calculates the difference in height between a first electronic component mounted within the electronic component-embedded substrate and a second electronic component mounted within the electronic component-embedded substrate, from first component information including the height information about the first electronic component and second component information including the height information about the second electronic component; and a height adjustment necessity determination unit which compares the difference and a preset reference value and determines whether the height adjustment member disposed on the first electronic component or the second electronic component is necessary.
Provided are a design assistance device, a design assistance program, and a design assistance method with which it is possible to improve the degree of freedom in designing of pin arrangement of a child substrate (component embedded substrate) while considering component arrangement on a mother substrate (mounting substrate). This design assistance device is for a component embedded substrate in which an electronic component constituting at least a part of a circuit is embedded, and the design assistance device comprises at least: a component information acquisition unit that acquires component information concerning an electronic component to be mounted in the component embedded substrate; a pad information acquisition unit that acquires electrode pad information concerning the types and the number of electrode pads to be arranged on a component embedded substrate surface on the basis of the component information; a mounting arrangement information acquisition unit that acquires arrangement information of the component embedded substrate and other components on the mounting substrate on which the component embedded substrate is mounted; and a pad arrangement selection unit that selects the arrangement of the electrode pads in the component embedded substrate surface on the basis of the mounting arrangement information and the electrode pad information.
G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
A design assistance device, a design assistance program and a design assistance method are provided which, in design involving derivation of a required minimum area for a component-embedded substrate, enable design that takes into account the elements characteristic of the component-embedded substrate. This design assistance device for a component-embedded substrate comprising embedded semiconductor components that constitute at least part of a circuit, is provided with: a component information acquisition unit which acquires component information relating to electronic components mounted in the component-embedded substrate; and a required minimum area calculation unit which calculates the required minimum area for the component-embedded substrate on the basis of the shape information of the electronic components included in the aforementioned component information, and electric property information of the circuit and/or electronic component.
A germanium oxide-containing oxide semiconductor with excellent electrical properties is provided. An oxide semiconductor film containing germanium oxide is achieved using an oxide semiconductor formation method characterized by atomizing or dropletizing a raw material solution that contains a dopant element, supplying a carrier gas to the obtained atomized droplets, conveying the atomized droplets onto the substrate by means of the carrier gas, and subsequently thermally reacting the atomized droplets on the substrate, wherein the carrier density is at least 1.0×1018/cm3.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides an oxide crystal that has a favorable orientation, that has germanium as the main component, and that has a rutile-type structure. By using mist CVD under specific conditions to form a germanium oxide film on a titanium oxide substrate having a rutile-type structure, obtained is an oxide crystal containing an oxide having a rutile-type structure, wherein: the oxide crystal is oriented in the crystal axis direction perpendicular or parallel to the c axis; and the atomic ratio of germanium is greater than 0.5 in metal elements in the oxide crystal.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides a crystalline oxide film in which abnormal grains are reduced and which has favorable crystallinity. A raw material solution containing germanium is atomized or made into droplets, a carrier gas is supplied to the obtained atomized droplets, the carrier gas carries the atomized droplets onto a crystal substrate having a tetragonal crystal structure, and the atomized droplets are subjected to a thermal reaction on the crystal substrate, so as to obtain a crystalline oxide film containing an oxide of germanium, wherein the area ratio of abnormal grains as found by SEM observation of the surface is not more than 3%.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a power conversion device converting power and supplying the converted power to a load, the power conversion device including: a power conversion circuit connected to the load and configured to supply/receive the power; a coil configured to detect a current passing through the power conversion circuit and to output a voltage corresponding to the detected current; an integration circuit configured to integrate the voltage output from the coil to generate a voltage signal corresponding to a variation of the current; and a control device configured to generate a control signal to the power conversion circuit based on the voltage signal output from the integration circuit.
H02M 1/36 - Means for starting or stopping converters
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
Provided is a semiconductor device, including at least: a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of an m-axis in the semiconductor layer being the first direction.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/42 - Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.
Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.
Provided is a semiconductor apparatus that has a high withstand voltage, is useful for power devices, and comprises at least: a crystalline oxide semiconductor layer (8) including a channel layer (6) and a drift layer (7); and a gate electrode (5a) provided on the channel layer with a gate-insulating film (4a) interposed therebetween. The crystalline oxide semiconductor layer includes a crystal defect region (2) between the channel layer and the drift layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides a semiconductor device that has excellent resistance to pressure and is especially useful for power devices. This semiconductor device at least comprises: a crystalline oxide semiconductor layer (8) that includes a channel layer (6), a drift layer (7), and a source region (1); a gate electrode (5a) that is disposed on the channel layer with a gate insulator film (4a) therebetween; a current interruption region (2) that is disposed between the channel layer and the drift layer; and a source electrode (5b) that is provided on the source region. The current interruption region is formed from a high-resistivity layer, and the source electrode forms a contact with the current interruption region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
44.
POWER CONVERSION CIRCUIT, POWER CONVERSION DEVICE, AND CONTROL SYSTEM
Provided are a power conversion circuit and a power conversion system capable of improving short-circuit resistance while maintaining switching characteristics. The power conversion circuit comprises: a first switching element and a second switching element that are connected in parallel with each other; and a control unit which controls on/off of each switching element, wherein a current value at a cross point between a current-voltage characteristic when a forward current is passed through the first switching element and a current-voltage characteristic when a current is passed through the second switching element is greater than the rated current of the power conversion circuit.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/12 - Modifications for increasing the maximum permissible switched current
The present invention provides a semiconductor device that has excellent pressure resistance and is particularly useful in power devices. Provided is a semiconductor device which comprises at least a crystalline oxide semiconductor layer (8) including a channel layer (6) and a drift layer (7), a gate electrode (5a) disposed upon the channel layer with a gate insulator film (4a) therebetween, and a current-interrupting layer (2) disposed between the channel layer and the drift layer, wherein: the current-interrupting layer contains a dopant element; and the current-interrupting layer includes a region in which the dopant element concentration is at least 5.0×1017/cm3.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
46.
P-type oxide semiconductor and method for manufacturing same
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
H01L 33/26 - Materials of the light emitting region
The present invention provides a semiconductor device that has excellent pressure resistance and is particularly useful in power devices. Provided is a semiconductor device which comprises at least a crystalline oxide semiconductor layer including a channel layer and a drift layer, and a gate electrode disposed upon the channel layer with a gate insulator film therebetween, and which has a current-interrupting layer between the channel layer and the drift layer, the semiconductor device being characterized in that: the drift layer includes a first crystalline oxide as a main component; the current-interrupting layer includes a second crystalline oxide as a main component; and the compositions of the first crystalline oxide and the second crystalline oxide differ.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 23/46 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
The purpose of the present invention is to provide a semiconductor device in which various types of semiconductor elements can be mounted at high density. Provided is a semiconductor device comprising first and second semiconductor elements that are juxtaposed between a first wiring member including a first substrate and a second wiring member including a second substrate and are electrically connected to the first and second substrates, respectively, wherein the first semiconductor element and the first wiring member are directly connected to each other, and the second semiconductor element and the first wiring member are connected via a conductive member.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
The present invention provides a semiconductor device that is particularly useful as a power device and has reduced element resistance. Provided is a semiconductor device that comprises: an oxide semiconductor layer that includes at least one source region; and a source electrode that is arranged on the source region. The source region comprises at least: an n+ semiconductor layer; and an n++ semiconductor layer that is arranged on the n+ semiconductor layer and has a greater carrier density than the n+ semiconductor layer. The n++ semiconductor layer is an epitaxial layer.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/336 - Field-effect transistors with an insulated gate
[Problem] The purpose is to provide a reliable semiconductor device and semiconductor system with which it is possible to reduce the influence of thermal stress while improving heat dissipation of a semiconductor element. [Solution] A semiconductor device comprising a stack in which at least one semiconductor element is disposed between a first layer and a second layer, wherein a metal layer is provided on the upper side of the first layer with a first electrically insulating material therebetween, and a second electrically insulating material is provided in at least a part of a gap between the first layer and the second layer, the first electrically insulating material having an elastic modulus lower than that of the second electrically insulating material.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
52.
ELECTRICALLY-CONDUCTIVE METAL OXIDE FILM, SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.
H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/227 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
Provided is a semiconductor device comprising at least, a high-resistance oxide film, which is placed in a direction in which a current flows, the high-resistance oxide film having a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; and a high-resistance oxide film, which is placed between the source electrode and the drain electrode and has a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; a high-resistance oxide film; and a substrate with the high-resistance oxide film being placed between the source electrode or/and the drain electrode and the substrate and having a resistance of 1.0×106 Ω·cm or higher.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm2/V·s or higher.
There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2V·s or higher.
An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer, a dielectric film provided on the semiconductor layer and having an opening and provided over a distance of at least 0.25 μm from the opening, and an electrode layer provided over a part or all of the dielectric film from the inside of the opening, wherein the dielectric film has a thickness of less than 50 nm from the opening to a distance of 0.25 μm, and has relative permittivity of 5 or less.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor element including at least a multilayer structure including a semiconductor layer, a first metal layer, a second metal layer and a third metal layer, the semiconductor layer including an oxide semiconductor film, the first metal layer, the second metal layer and the third metal layer being arranged on the semiconductor layer, the first metal layer, the second metal layer and the third metal layer respectively including one or two or more different metals, the first metal layer being in ohmic contact with the semiconductor layer, the second metal layer being disposed between the first metal layer and the third metal layer, and the second metal layer containing Pt or/and Pd.
Provided is a laminated structure that has a crystalline film having a large area, which is useful for a semiconductor device, etc., and having a good film thickness distribution in which the film thickness is 30 μm or less, and that has excellent heat dissipation. In a laminated structure in which a crystal film containing a crystalline metal oxide as a main component is laminated on a support directly or with another layer therebetween, the support has a thermal conductivity of 100 W/m·K or more at room temperature, and the crystal film has a corundum structure. Furthermore, the film thickness of the crystal film is 1 μm to 30 μm, the area of the crystal film is 15 cm2 or more, the distribution of the film thickness in the area is in the range of ±10% or less.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided is a semiconductor element including; a semiconductor film; and a porous layer disposed on a first surface side of the semiconductor film or a second surface side opposite from the first surface side, a porosity of the porous layer being no more than 10%.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer including an oxide semiconductor having a corundum structure as a main component, and a Schottky electrode including a first electrode layer and a second electrode layer having a higher conductivity than the first electrode layer, wherein an outer edge portion of the second electrode layer is electrically connected to the semiconductor layer at an electrical connection region through the first electrode layer, and an outer edge portion of the first electrode layer is located outside an outer edge portion of the electrical connection region.
There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×107 cm−2 or less; and a surface area of 10 mm2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
One object of the present invention is to propose a structure for preventing the injection of holes into a gate insulating film. This semiconductor device comprises a gate insulating film, a hole blocking layer disposed in contact with the gate insulating film, and an oxide semiconductor layer disposed in contact with the hole blocking layer, wherein the hole blocking layer is provided between the gate insulating film and the oxide semiconductor layer.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/336 - Field-effect transistors with an insulated gate
Provided is a semiconductor device in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented, the semiconductor device that is particularly useful for power devices. A semiconductor device including at least: a semiconductor layer; a Schottky electrode; and an insulator layer provided between a part of the semiconductor layer and the Schottky electrode, wherein the semiconductor layer contains a crystalline oxide semiconductor, and wherein the insulator layer has a taper angle of 10° or less.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide film on the base, the oxide film including, as a major component, a metal oxide containing at least aluminum and gallium, the oxide film having a corundum structure, wherein a principal surface of the oxide film is an m-plane.
A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide semiconductor film on the base, the oxide semiconductor film including, as a major component, a metal oxide containing at least aluminum and gallium, wherein the oxide semiconductor film has a mobility of no less than 5 cm2/Vs.
Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
Provided is a semiconductor device having an excellent heat dissipation effect for a crystalline oxide semiconductor layer. This semiconductor device includes: a gate electrode of which at least a part is embedded in a crystalline oxide semiconductor layer; and a heat dissipation part having a higher thermal conductivity than the crystalline oxide semiconductor layer, wherein at least a portion of the heat dissipation part is disposed in the vicinity of an embedded end portion of the gate electrode in the crystalline oxide semiconductor layer and/or at a position deeper than the embedded end portion, and thus the heat dissipation effect for the crystalline oxide semiconductor layer is made more efficient and more excellent.
The present invention provides a semiconductor device which has an efficient electric field attenuation effect with respect to a crystalline oxide semiconductor layer. With respect to a semiconductor device which comprises a gate electrode that is at least partially buried in a semiconductor layer, a deep p layer that is at least partially buried in the semiconductor layer to a position that is equal to or deeper than the position of the buried lower end of the gate electrode, and a channel layer, the deep p layer is composed of a crystalline oxide semiconductor, and the electric field of the crystalline oxide semiconductor is efficiently attenuated by having the carrier concentration thereof higher than that of the channel layer, thereby having a good electric field distribution within the semiconductor layer or within a gate insulating layer.
Provided are a power conversion circuit that has reduced radiation noise in the entire circuit and a power conversion system. The power conversion circuit comprises at least a switching element (for example, a MOSFET, etc.) and a diode (for example, a freewheel diode, etc.), said power conversion circuit being a single-switch power conversion circuit wherein the diode is a gallium oxide-based Schottky barrier diode, and the switching element is switch-controlled in a hard switching manner.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
Provided is a semiconductor device capable of improving durability against overcurrent while enabling a decrease in size and an increase in density. A semiconductor device of the present invention includes a plurality of PN junction diodes having a negative temperature characteristic and connected in series, a Schottky barrier diode having a positive temperature characteristic and connected in parallel with the plurality of PN junction diodes, and a die pad on which at least one of the plurality of PN junction diodes and the Schottky barrier diode are commonly mounted.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
Provided is a semiconductor device capable of improving durability against overcurrent while enabling a decrease in size and an increase in density. A semiconductor device of the present invention includes a plurality of PN junction diodes having a negative temperature characteristic and connected in series, a plurality of resistance elements connected in parallel to a respective PN junction diode and in series to each other, and a Schottky barrier diode having a positive temperature characteristic and connected in parallel with the plurality of PN junction diodes.
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
C30B 25/14 - Feed and outlet means for the gases; Modifying the flow of the reactive gases
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
75.
P-TYPE OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE CONTAINING P-TYPE OXIDE SEMICONDUCTOR
[Problem] To provide a semiconductor device containing a p-type oxide semiconductor that is industrially useful and exhibits superior properties as a semiconductor. [Solution] A p-type oxide semiconductor that contains iridium and a metal oxide containing at least one metal selected from among the boron group metals as main components, and further contains a dopant, wherein the hole carrier concentration is 1.0×1019/cm3 or less.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
233), an electrode layer which is superposed on the semiconductor layer, and a conductive substrate which is superposed on the electrode layer directly or with another layer being interposed therebetween, wherein the conductive substrate contains a group 6 metal of the periodic table; and a semiconductor device which is provided with this semiconductor element.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided are: an oxide semiconductor that is industrially useful and that has p-type electrical conductivity that is superior in terms of semiconductor characteristics; and a semiconductor device containing the oxide semiconductor. The oxide semiconductor contains mixed crystals of a metal oxide including two or more metals, the mixed crystals comprising, as the main constituents, a metal oxide containing at least a first metal selected from group 9 of the periodic table, and a second metal selected from group 13 of the periodic table. Among the metals in the mixed crystals, the second metal is present at an atomic ratio of 40% or more, and the mixed crystals have p-type electrical conductivity.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
233, etc.) as a main component, an electrode layer laminated on the semiconductor layer, and an electroconductive substrate laminated on the electrode layer directly or with another layer interposed therebetween, the electroconductive substrate containing at least a first metal selected from metals in group 11 of the Periodic Table and a second metal having a linear thermal expansion coefficient different from that of the first metal. The semiconductor device is provided with said semiconductor element.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a power conversion circuit in which radiation noise is reduced. The power conversion circuit is provided with at least a switching element (5) for opening and closing an input voltage via a reactor (4), and a commutating diode (7) which, by means of a voltage including at least an electromotive force generated from the reactor (4) when the switching element (5) is off, allows for conduction of a current that flows in the direction of the electromotive force. The commutating diode (7) includes a gallium oxide-based Schottky barrier diode.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/12 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor manufacturing machines and structural parts therefor; semiconductor manufacturing parts and accessories, namely, bearings as parts of machines, brushes as parts of machines, chutes as parts of machines; chemical processing machines and apparatus, namely, grinding machines, filtering machines, extracting machines; textile machines and apparatus, namely, textile calendaring machines, textile making-up machines, textile washing machines; glassware manufacturing machines and structural parts therefor; plastic processing machines and structural parts therefor; hydraulic torque converters and pneumatic controls for machines, motors and engines; valves, namely, butterfly valves as parts of machines, ball valves as parts of machines, angle valves as parts of machines Semi-conductors; semi-conductor devices; telecommunication machines, apparatus and their parts, namely, automatic switching apparatus, computer hardware for telecommunications, electric resistors; electronic machines, apparatus and their parts, namely, electronic circuits, electronic connectors, electronic agendas; measuring or testing machines, instruments and their parts, namely, distance measuring apparatus, gasometers, instruments for measuring length, cement testing machines; laboratory apparatus, instruments and their parts, namely, beakers, drying ovens, centrifuges
The present invention provides a production method for a semiconductor device containing a semiconductor film having an inclined surface on the edge thereof. This production method for a semiconductor device comprises causing the epitaxial growth of a semiconductor film upon a substrate on which a mask having an inclined surface is disposed, and thereby forming a semiconductor film having an inclined surface on the edge thereof.
C30B 23/08 - Epitaxial-layer growth by condensing ionised vapours
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
There is a tendency for an electric field to concentrate at an end edge part of a Schottky electrode. Provided is a semiconductor device that has a structure which suppresses concentration of the electric field. In one embodiment of the present invention, a semiconductor device has a semiconductor layer, a non-conductive layer with which a side of the semiconductor layer is at least partially in contact, and a Schottky electrode which is disposed above the semiconductor layer and the non-conductive layer, wherein an edge part of the Schottky electrode is positioned above the nonconductive layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
84.
Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
85.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE
A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
86.
LAYERED STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE, AND SEMICONDUCTOR SYSTEM
A layered structure includes an oxide semiconductor film containing as a major component gallium oxide or a mixed crystal thereof, and an oxide film containing at least one element selected from elements of Group 15 in the periodic table and arranged on the oxide semiconductor film.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors that is provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing gallium, a number of the two or more p-type semiconductors that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
90.
Film forming method and crystalline multilayer structure
The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The purpose of the present invention is to provide a semiconductor device capable of suppressing the effects of generated heat on a control target. The semiconductor device comprises first and second electrode layers 1, 2 that are disposed facing each other and are provided with wiring on the facing surfaces; semiconductor elements 3, 4 that are positioned in a gap between the first and second electrode layers 1, 2, and are electrically connected to the first and second electrode layers 1, 2; and vias 5 that are positioned in the gap between the first and second electrode layers 1, 2, are electrically connected to the first and second electrode layers 1, 2, and detect the state of the semiconductor elements 3, 4 according to a loss in electrical connection resulting from breaking when a prescribed temperature has been attained.
Provided is a power conversion system that can easily detect overcurrent without alteration to the basis configuration of a power conversion circuit. The present invention is a power conversion system 1 for converting power and supplying the converted power to a load, said system characterized by comprising: a power conversion circuit 11 that is connected to the load 2 and transfers power; a coil 12 that detects a current passing through the power conversion circuit 11 and outputs a corresponding voltage; an integrating circuit 13 that, by integrating the voltage output from the coil 12, generates a voltage signal equivalent to the amount of change in the current; and a control means that generates a control signal for the power conversion circuit 11 on the basis of the voltage signal Vb output from the integrating circuit 13.
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
In one embodiment, a semiconductor device of the present invention comprises at least a semiconductor layer having a corundum structure, and a first electrode and a second electrode each arranged on a first surface side of the semiconductor layer. The semiconductor device is configured such that electrical current flows in a first direction from the first electrode toward the second electrode. The m-axis direction of the semiconductor layer is parallel to the first direction. Additionally, in another embodiment, the semiconductor device is characterized by comprising at least a semiconductor layer having a corundum structure, a first electrode arranged on a first surface side of the semiconductor layer, and a second electrode arranged on a second surface side that faces opposite the first surface side. The first surface is the m surface, the second electrode is longer than the first electrode in at least the first direction, and the first direction is the c-axis direction of the semiconductor layer. As one example of an embodiment of a crystal growth method of the present invention, a crystal growth method includes growing a corundum-structured crystal on a c-surface of a crystal substrate for corundum-structured crystal growth, the crystal substrate being provided with an uneven section such that the displacement accompanying the crystal growth extends in the m-axis direction more than in the a-axis direction. Additionally, one example of an embodiment of the present invention is characterized by being a method for growing a corundum-structured crystal by using a crystal substrate for crystal growth, wherein an uneven section is provided on the crystal growth surface side of the crystal substrate such that displacement that expands in the m-axis direction of the crystal is moved from the direction of crystal growth.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided are a semiconductor element and a semiconductor device which excel in semiconductor characteristics and heat-dissipating properties. The semiconductor element includes a layered structural body in which an oxide semiconductor film containing, as a main component, an oxide having a corundum structure is layered on a conductive substrate directly or via another layer. The conductive substrate has an area larger than that of the oxide semiconductor film. The semiconductor device is formed by joining, using a joining member, the semiconductor element with a lead frame, a circuit substrate, or a heat-dissipating substrate.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided are a semiconductor element and a semiconductor device which excel in semiconductor characteristics and heat-dissipating properties. The semiconductor element includes a layered structural body in which an oxide semiconductor film containing, as a main component, an oxide containing gallium is layered on a conductive substrate directly or via another layer. The conductive substrate has an area larger than that of the oxide semiconductor film. The semiconductor device is formed by joining, using a joining member, the semiconductor element with a lead frame, a circuit substrate, or a heat-dissipating substrate.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
96.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A semiconductor device which comprises: a semiconductor film that contains a Schottky junction region and an ohmic junction region; a Schottky electrode that is arranged on the Schottky junction region of the semiconductor film; and an ohmic electrode that is arranged on the ohmic junction region. This semiconductor device is characterized in that the dislocation density of the Schottky junction region of the semiconductor film is lower than the dislocation density of the ohmic junction region of the semiconductor film.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
The disclosure provides a crystalline oxide film that has reduced defects such as dislocations due to a reduced facet growth. Also, the disclosure provides a crystalline oxide film that is useful for semiconductor devices and has an enhanced crystal quality. A crystalline oxide film, including: an epitaxial layer having a corundum structure, the lateral growth area is substantially free from a facet growth area, a growth direction of the lateral growth area that is c-axis direction or substantially c-axis direction, the lateral growth area including a dislocation line extending to the c-axis direction or substantially c-axis direction, a first crystal oxide and a second crystal oxide bonded to each other, that are crystal-grown in a direction parallel or approximately parallel to the x-axis.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor device having superior semiconductor properties, particularly, superior electrical properties. Obtained is the semiconductor device which has at least a semiconductor layer and a first electrode and second electrode each disposed on a first surface side of the semiconductor layer, and which is configured such that, in the semiconductor layer, electrical current flows in a first direction from the first electrode toward the second electrode. The semiconductor layer has a corundum structure and the c-axis direction of the semiconductor layer is the first direction.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor device having excellent semiconductor characteristics, particularly electrical characteristics. Obtained is a semiconductor device that has at least: a semiconductor layer; and a first electrode and a second electrode each disposed on a first surface side of the semiconductor layer, the semiconductor device being configured such that in the semiconductor layer, current flows in a first direction from the first electrode toward the second electrode, wherein the semiconductor layer has a corundum structure, and the direction of a c axis of the semiconductor layer is the first direction.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
