GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hu, Chieh
Tseng, Hsien-Ta
Wu, Chun-Sheng
Luter, William Lynn
Chen, Liang-Chin
Bhagavat, Sumeet
Hudson, Carissima Marie
Wu, Yu-Chiao
Abstract
A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/14 - Heating of the melt or the crystallised materials
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hu, Chieh
Tseng, Hsien-Ta
Wu, Chun-Sheng
Luter, William Lynn
Chen, Liang-Chin
Bhagavat, Sumeet
Hudson, Carissima Marie
Wu, Yu-Chiao
Abstract
A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/14 - Heating of the melt or the crystallised materials
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hu, Chieh
Tseng, Hsien-Ta
Wu, Chun-Sheng
Luter, William Lynn
Chen, Liang-Chin
Bhagavat, Sumeet
Husdon, Carissima Marie
Wu, Yu-Chiao
Abstract
A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Chuang, Chih-Yuan
Wohlmuth, Walter Tony
Abstract
A semiconductor substrate includes a high-resistivity silicon carbide layer and a gallium nitride epitaxial layer. The gallium nitride epitaxial layer is formed on a surface, a thickness of the gallium nitride epitaxial layer is less than 2 μm, and a full width at half maximum (FWHM) of an X-ray diffraction analysis (002) plane is less than 100 arcsec. The thickness of the high-resistivity silicon carbide layer ranges from 20 μm to 50 μm. The surface of the high-resistivity silicon carbide layer has an angle ranging from 0° to +/−8° with respect to a (0001) plane. The micropipe density (MPD) of the high-resistivity silicon carbide layer is less than 0.5 ea/cm2, the basal plane dislocation (BPD) of the high-resistivity silicon carbide layer is less than 10 ea/cm2, and the threading screw dislocation (TSD) of the high-resistivity silicon carbide layer is less than 500 ea/cm2.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
5.
SINGLE CRYSTAL GROWTH SUSCEPTOR ASSEMBLY WITH SACRIFICE RING
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hunag, Hong-Huei
Wu, Chun-Sheng
Chou, Wei-Chen
Lin, Chen-Yi
Tsai, Feng-Chien
Meyer, Benjamin Michael
Abstract
A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
6.
AMORPHOUS PHASE MODIFICATION APPARATUS AND PROCESSING METHOD OF SINGLE CRYSTAL MATERIAL
GlobalWafers Co., Ltd. (Taiwan, Province of China)
mRadian Femto Sources Co., Ltd. (Taiwan, Province of China)
Inventor
Lee, Chien Chung
Wang, Bo-Kai
Wang, Shang-Chi
Tsai, Chia-Chi
Li, I-Ching
Abstract
A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 μm to 600 μm, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Ji, Junhwan
Yoon, Woojin
Ryu, Jaewoo
Abstract
Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the second stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
8.
SINGLE CRYSTAL GROWTH SUSCEPTOR ASSEMBLY WITH SACRIFICE RING
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Huang, Hong-Huei
Meyer, Benjamin Michael
Wu, Chun-Sheng
Chou, Wei-Chen
Lin, Chen-Yi
Tsai, Feng-Chien
Abstract
A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Ryu, Jaewoo
Hudson, Carissima Marie
Yuk, Taewon
Ji, Junhwan
Abstract
Synthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Ryu, Jaewoo
Hudson, Carissima Marie
Yuk, Taewon
Ji, Junhwan
Abstract
Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Ryu, Jaewoo
Hudson, Carissima Marie
Ji, Junhwan
Yoon, Woojin
Abstract
Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Ryu, Jaewoo
Hudson, Carissima Marie
Ji, Junhwan
Yoon, Woojin
Abstract
Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Lin, Po-Jung
Abstract
A light-emitting element structure includes a substrate, a nucleation layer located above the substrate, a buffer layer located above the nucleation layer, a first nitride layer located above the buffer layer and being in contact with the buffer layer, a second nitride layer located above the first nitride layer and being in contact with the first nitride layer, a first semiconductor layer located above the second nitride layer, a light-emitting layer, and a second semiconductor layer located above the light-emitting layer. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer. A dislocation defect density of the second nitride layer is smaller than or equal to 3×109 cm−2. The light-emitting layer is located above the first semiconductor layer and is adapted to emit light when electrons and holes recombine.
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
14.
METHOD FOR EPITAXY OF HIGH ELECTRON MOBILITY TRANSISTOR
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Abstract
A method for epitaxy of a high electron mobility transistor includes: provide a substrate; form a nucleation layer on the substrate; form a buffer layer on the nucleation layer; form a first nitride layer being in contact with the buffer layer on the buffer layer; form a second nitride layer being in contact with the first nitride layer on the first nitride layer, and perform carbon doping on the second nitride layer; form a channel layer on the second nitride layer; and form a barrier layer on the channel layer; a two-dimensional electron gas is formed in the channel layer along an interface between the channel layer and the barrier layer; a growth temperature of the second nitride layer is less than a growth temperature of the first nitride layer; a film thickness of the first nitride layer is less than a film thickness of the second nitride layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
15.
HIGH ELECTRON MOBILITY TRANSISTOR EPITAXIAL STRUCTURE
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Lin, Hong-Che
Abstract
A high electron mobility transistor epitaxial structure includes a substrate, a nucleation layer, a buffer layer, a first nitride layer, a second nitride layer, a channel layer, and a barrier layer. The nucleation layer is located above the substrate. The buffer layer is located above the nucleation layer. The first nitride layer is located above the buffer layer and is in contact with the buffer layer. The second nitride layer is located above the first nitride layer and is in contact with the first nitride layer. A film thickness of the first nitride layer is less than a film thickness of the second nitride layer. The second nitride layer is carbon doped. A carbon concentration of the first nitride layer is less than a carbon concentration of the second nitride layer. The channel layer is located above the second nitride layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Chuang, Chih-Yuan
Abstract
A method of manufacturing a light-emitting element, including: provide a substrate; form a nucleation layer above the substrate; form a buffer layer above the nucleation layer; form a first nitride layer being in contact with the buffer layer above the buffer layer; form a second nitride layer being in contact with the first nitride layer above the first nitride layer; form a first semiconductor layer above the second nitride layer; form a light-emitting layer above the first semiconductor layer; form a second semiconductor layer above the light-emitting layer. The light-emitting layer is adapted to emit light when electrons and holes recombine. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer, and a growth pressure of the first nitride layer is smaller than a growth pressure of the second nitride layer.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Wu, Yu-Chiao
Luter, William Lynn
Phillips, Richard J.
Eoff, James Dean
Abstract
An ingot puller for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector attached to and extending into the housing. The chamber is maintained at a first pressure. The dopant injector includes a reservoir for containing a liquid dopant, a feed tube positioned within the chamber and connected to the reservoir, and a vaporization cup positioned within the feed tube and the chamber.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/14 - Heating of the melt or the crystallised materials
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Meyer, Benjamin Michael
Kayser, Justin Scott
Abstract
Cooling jacket devices of ingot puller apparatus used to prepare silicon ingots by the Czochralski method are disclosed. The cooling jacket device may include an inner shell that forms an inner chamber through which the ingot is pulled. The cooling jacket includes an outer shell. A plurality of tubes are disposed between the inner shell and outer shell. Each tube forms a cooling fluid passageway through which cooling fluid passes.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Abstract
A method for producing a single crystal silicon ingot from a silicon melt includes providing a crucible within an inner chamber of an ingot puller, the crucible including an inner surface and a synthetic liner on the inner surface. The method further includes adding an initial charge of polysilicon to the crucible, melting the initial charge of polysilicon to cause the silicon melt to form in the crucible, and dissolving a melt modifier into the silicon melt to devitrify the synthetic liner and form a crystallized layer on the crucible. The crystallized layer has a thickness less than 700 microns. The method further includes pulling a single crystal silicon ingot from the silicon melt.
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
20.
SYSTEMS AND METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH CRUCIBLES HAVING A SYNTHETIC LINER
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Phillips, Richard, Joseph
Abstract
A method for producing a single crystal silicon ingot from a silicon melt includes providing a crucible within an inner chamber of an ingot puller, the crucible including an inner surface and a synthetic liner on the inner surface. The method further includes adding an initial charge of polysilicon to the crucible, melting the initial charge of polysilicon to cause the silicon melt to form in the crucible, and dissolving a melt modifier into the silicon melt to devitrify the synthetic liner and form a crystallized layer on the crucible. The crystallized layer has a thickness less than 700 microns. The method further includes pulling a single crystal silicon ingot from the silicon melt.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Abstract
A method of growing the silicon carbide crystal includes the following steps. A raw material containing a carbon element and a silicon element, and a seed crystal located above the raw material are provided in a reactor. A growth process of the silicon carbide crystal is performed, wherein the growth process includes heating the reactor and the raw material to form silicon carbide crystal on the seed crystal. In the growth process, a ratio difference (ΔTz/ΔTx) between an axial temperature gradient (ΔTz) and a radial temperature gradient (ΔTx) of the silicon carbide crystal is adjusted so that the ratio difference is controlled in the range of 0.5 to 3 to form the silicon carbide crystal. The silicon carbide crystal formed by the above growth method can have a uniform resistivity distribution and excellent geometric performance.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Abstract
A crystal growing method for crystals include the following steps. A first crystal seed is provided, the first crystal seed has a first monocrystalline proportion and a first size. N times of crystal growth processes are performed on the first crystal seed, wherein each of the crystal growth process will increase the monocrystalline proportion, and the N times of crystal growth processes are performed until a second crystal having a monocrystalline proportion of 100% is reached, and wherein the N times includes more than 3 times of crystal growth processes. Each crystal growth process includes adjusting a ratio difference (ΔTz/ΔTx) between an axial temperature gradient (ΔTz) and a radial temperature gradient (ΔTx) of the crystal, so as to control the ratio difference within a range of 0.5 to 3 for forming the second crystal.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Wang, Ye-Jun
Liou, Chien-Cheng
Abstract
A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided. The furnace is movably disposed in the external heating module. The first driven device drives the furnace to move along an axis. The second driven device drives the furnace to rotate around the axis. The control device is electrically connected to the first driven device, the second driven device, and the external heating module.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Wang, Ye-Jun
Liou, Chien-Cheng
Abstract
A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided. The crystal includes multiple sub-crystals stacked along the first direction, a corresponding one of the sub-crystals is formed at each of the time points, and the sub-crystals include multiple end surfaces away from the seed crystal, so that a difference value of maximum temperatures of any two of the end surfaces is less than or equal to 20 degrees. A wafer is also provided.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Abstract
A silicon carbide crystal and a silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide crystal and the silicon carbide wafer is 100%, the resistivity thereof is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity thereof is less than 0.4%.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hamano, Manabu
Tu, Chun-Chin
Abstract
A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces. The susceptor also includes a recess that extends into the body from the front surface to a recess floor and a ledge that circumscribes the recess floor in the recess. The ledge includes a first surface oriented at a first angle relative to a horizontal plane parallel to the central plane, a second surface that extends radially inward from the first surface, the second surface optionally oriented at a second acute angle relative to the horizontal plane, and a third surface that extends between the second surface and the recess floor, the third surface oriented at a third acute angle relative to the horizontal plane. Each of the first, second, and third surfaces extends circumferentially along the ledge.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Abstract
A measurement system includes a target object at least partially visible through an opening in a crystal puller. The crystal puller has a silicon melt in a crucible and a reflector defining a central passage through which a crystal is pulled. A detector array captures light through the opening. The detector array is directed to a surface of the silicon melt in the crystal puller and to the target object, and a laser selectively transmits a coherent light beam through the opening to the target object to produce a reflection of the target object on the surface of the silicon melt. An optical modulator pulses the coherent light beams of the laser into discrete coherent light beams having a period, and a lock-in amplifier is connected to the detector array to filter discrete coherent light having the period from captured light.
C30B 15/24 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using photo or X-ray detectors
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hamano, Manabu
Tu, Chun-Chin
Abstract
A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces. The susceptor also includes a recess that extends into the body from the front surface to a recess floor and a ledge that circumscribes the recess floor in the recess. The ledge includes a first surface oriented at a first angle relative to a horizontal plane parallel to the central plane, a second surface that extends radially inward from the first surface, the second surface optionally oriented at a second acute angle relative to the horizontal plane, and a third surface that extends between the second surface and the recess floor, the third surface oriented at a third acute angle relative to the horizontal plane. Each of the first, second, and third surfaces extends circumferentially along the ledge.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
29.
NON-CONTACT SYSTEMS AND METHODS FOR DETERMINING DISTANCE BETWEEN SILICON MELT AND REFLECTOR IN A CRYSTAL PULLER
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Abstract
A measurement system includes a target object at least partially visible through an opening in a crystal puller. The crystal puller has a silicon melt in a crucible and a reflector defining a central passage through which a crystal is pulled. A detector array captures light through the opening. The detector array is directed to a surface of the silicon melt in the crystal puller and to the target object, and a laser selectively transmits a coherent light beam through the opening to the target object to produce a reflection of the target object on the surface of the silicon melt. An optical modulator pulses the coherent light beams of the laser into discrete coherent light beams having a period, and a lock-in amplifier is connected to the detector array to filter discrete coherent light having the period from captured light.
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using photo or X-ray detectors
30.
SYSTEMS AND METHODS FOR CONTROLLING SURFACE PROFILES OF WAFERS SLICED IN A WIRE SAW
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Luter, William L.
Bhagavat, Sumeet S.
Zavattari, Carlo
Albrecht, Peter D.
Abstract
Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.
B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhere; Machines, devices, tools therefor
B28D 1/10 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhere; Machines, devices, tools therefor by sawing with provision for measuring
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 7/00 - Accessories specially adapted for use with machines or devices of the other groups of this subclass
31.
METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED CARBON CONTAMINATION AND SUSCEPTORS FOR USE IN SUCH METHODS
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard J.
Luter, William
Hudson, Carissima Marie
Ryu, Jaewoo
Abstract
A graphite susceptor for supporting a quartz crucible during a crystal growth process includes a body having an interior surface and a coating deposited onto the interior surface. The interior surface of the body defines a cavity, and the cavity has a size and shape complementary to an outer size and shape of the crucible. The coating includes boron nitride and a sintering additive. The sintering additive is configured to promote densification of the boron nitride.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Bhagavat, Sumeet S.
Zavattari, Carlo
Albrecht, Peter D.
Luter, William L.
Abstract
Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 7/00 - Accessories specially adapted for use with machines or devices of the other groups of this subclass
33.
METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED CARBON CONTAMINATION AND SUSCEPTORS FOR USE IN SUCH METHODS
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Luter, William
Hudson, Carissima Marie
Ryu, Jaewoo
Phillips, Richard J.
Abstract
A graphite susceptor for supporting a quartz crucible during a crystal growth process includes a body having an interior surface and a coating deposited onto the interior surface. The interior surface of the body defines a cavity, and the cavity has a size and shape complementary to an outer size and shape of the crucible. The coating includes boron nitride and a sintering additive. The sintering additive is configured to promote densification of the boron nitride.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Chuang, Chih-Yuan
Lin, Po Jung
Lin, Hong Che
Abstract
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and 0≤y≤1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers. The aluminum content varies continuously throughout a thickness of at least one of the layers.
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
35.
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Lin, Tzu-Yao
Abstract
A method of manufacturing a high electron mobility transistor (HEMT) structure is disclosed. By controlling a passivation layer and a barrier layer to uninterruptedly grow in the same growth chamber, defects of the passivation layer generated in the growth process due to a drastic change in temperature, pressure, or atmosphere or degrading a quality of an interface between the passivation layer and the barrier layer could be avoided, thereby providing the passivation layer with a good quality and the interface between the passivation layer and the barrier layer with a good quality, so that the objective of improving the performance of the HEMT structure could be achieved.
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
36.
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Lin, Po-Jung
Wu, Han-Zong
Abstract
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face, and the growth face has an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer. Through the method of manufacturing the epitaxial structure, when the silicon face of the silicon carbide substrate has the off-angle, the problem of a poor epitaxial quality of the first group III nitride layer and a poor epitaxial quality of the second group III nitride layer could be effectively relieved.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Lin, Po-Jung
Wu, Han-Zong
Abstract
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face having an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer having a thickness less than 50 nm on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer. Through the method of manufacturing the epitaxial structure, when the silicon face of the silicon carbide substrate has the off-angle, the problem of a poor epitaxial quality of the first group III nitride layer and a poor epitaxial quality of the second group III nitride layer could be effectively relieved.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Lin, Po-Jung
Wu, Han-Zong
Abstract
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon nitride (SiC) substrate having a carbon face (C-face) without an off-angle; B: form an amorphous structure layer on the C-face of the SiC substrate; C: deposit a first group III nitride layer on the amorphous structure layer; and D: deposit a second group III nitride layer on the first group III nitride layer. By forming the amorphous structure layer, a top surface of the second group III nitride layer could be made to be in a flat and smooth state.
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 14/54 - Controlling or regulating the coating process
39.
METHOD FOR COLLECTING DUST FROM SINGLE CRYSTAL GROWTH SYSTEM
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Nakanishi, Masami
Su, Yu-Sheng
Li, I-Ching
Abstract
A method for collecting dust from a single crystal growth system includes providing dry air and oxygen into an exit pipe connecting to the single crystal growth system, blowing a first inert gas into the exit pipe to compel the dust oxide toward a dust collecting device, collecting the dust oxide by the dust collecting device; and providing a rotary pump to transport residues of the dust oxide backward. The oxygen reacts with the unstable dust for forming dust oxide. The exit pipe is used to exhaust unstable dust from the single crystal growth system.
B01D 45/16 - Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by centrifugal forces generated by the winding course of the gas stream
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
B01D 53/14 - Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
B01D 53/76 - Gas phase processes, e.g. by using aerosols
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Ho, Chin-Hung
Cheng, Chih-Kai
Lin, Chen-Yi
Tsai, Feng-Chien
Li, Tung-Hsiao
Jeong, Younggil
Uhm, Jin Yong
Abstract
Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Corsi, Emanuele
Bovio, Ezio
Abstract
A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller. The polishing head assembly holds a silicon wafer to position the silicon wafer in contact with the polishing pad. The polishing head assembly selectively varies a removal profile of the silicon wafer. The temperature sensor collects thermal data from a portion of the polishing pad. The controller is communicatively coupled to the polishing head assembly and the temperature sensor. The controller receives the thermal data from the temperature sensor and operates the polishing head assembly to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.
B24B 49/14 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
42.
METHODS FOR SEMICONDUCTOR WAFER PROCESSING USING A RADIANT HEAT CAP IN A SEMICONDUCTOR WAFER REACTOR
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hu, Chieh
Tu, Chun-Chin
Hsu, Lunghsing
Abstract
A method of manufacturing a semiconductor wafer in a reaction apparatus includes channeling a process gas into a reaction chamber of the reaction apparatus, heating the semiconductor wafer with a high intensity lamp positioned below the reaction chamber, blocking radiant heat from the high intensity lamp from heating a center region of the semiconductor wafer with a cap positioned on a shaft within the reaction chamber, the cap including a tube and a disc attached to the tube, where the disc generates a uniform temperature distribution on the semiconductor wafer, and depositing a layer on the semiconductor wafer with the process gas, where the uniform temperature distribution forms a uniform thickness of the layer on the semiconductor wafer.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Uhm, Jin Yong
Ho, Chin-Hung
Cheng, Chih-Kai
Lin, Chen-Yi
Tsai, Feng-Chien
Li, Tung-Hsiao
Jeong, Young Gil
Abstract
Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
44.
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Po Jung
Liu, Jia-Zhe
Abstract
A semiconductor structure includes a silicon carbide (SiC) substrate, a nucleation layer and a gallium nitride (GaN) layer. The silicon carbide layer has a first thickness T1. The nucleation layer is located on the silicon carbide layer and has a second thickness T2. The nucleation layer is made of AlGaN (AlGaN), and the second thickness T2 fulfills a thickness range of T1*0.002% to T1*0.006%. The gallium nitride layer is located on the nucleation layer and is separated from the silicon carbide substrate.
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/14 - Heating of the melt or the crystallised materials
NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lu, Zheng
Samanta, Gaurab
Lu, Tse-Wei
Tsai, Feng-Chien
Abstract
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lu, Zheng
Luter, William L.
Barghouti, Bashar Ahmed
Li, Wei-Ru
Abstract
A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain. The data is analyzed though a Fourier transform to obtain data in the frequency domain. The frequency domain data includes an amplitude which corresponds to mechanical wear of the gear. The time domain data is compared against a threshold amplitude to determine if the gears have mechanical wear such that preventative maintenance can be performed on the motor.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Nakajima, Kazuo
Nakanishi, Masami
Su, Yu Sheng
Hsu, Wen-Ching
Abstract
A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 15/36 - Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
C30B 15/10 - Crucibles or containers for supporting the melt
49.
SYSTEMS AND METHODS FOR DETERMINING MECHANICAL WEAR IN A CRYSTAL PULLER
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Luter, William, L.
Barghouti, Bashar, Ahmed
Li, Wei-Ru
Lu, Zheng
Abstract
A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain. The data is analyzed though a Fourier transform to obtain data in the frequency domain. The frequency domain data includes an amplitude which corresponds to mechanical wear of the gear. The time domain data is compared against a threshold amplitude to determine if the gears have mechanical wear such that preventative maintenance can be performed on the motor.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Lin, Po-Jung
Liu, Jia-Zhe
Abstract
An improved high electron mobility transistor (HEMT) structure includes a substrate, a nitride nucleation layer, a nitride buffer layer, a nitride channel layer, and a barrier layer. The nitride buffer layer includes a metal dopant. The nitride channel layer has a metal doping concentration less than that of the nitride buffer layer. A two-dimensional electron gas is formed in the nitride channel layer along an interface between the nitride channel layer and the barrier layer. A metal doping concentration X at an interface between the nitride buffer layer and the nitride channel layer is defined as the number of metal atoms per cubic centimeter, and a thickness Y of the nitride channel later is in microns (μm) and satisfies Y≤(0.2171)ln(X)−8.34, thereby reducing an influence of the metal dopant to a sheet resistance value of the nitride channel layer and providing the improved HEMT structure having a better performance.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
51.
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Lin, Po-Jung
Liu, Jia-Zhe
Abstract
An improved high electron mobility transistor (HEMT) structure includes in order a substrate, a nucleation layer, a buffer layer, a channel layer, and a barrier layer, wherein the buffer layer includes a dopant. The channel layer having a dopant doping concentration less than that of the buffer layer. A two-dimension electron gas is formed in the channel layer along an interface between the channel layer and the barrier layer. A dopant doping concentration of the channel layer at an interface between the channel layer and the barrier layer is equal to or greater than 1×1015 cm−3.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Yu, Wen-Huai
Hung, Shih-Che
Lo, Hung-Chang
Fan, Chun-I
Tsai, Chia-Chi
Hsu, Wen-Ching
Abstract
A wafer and a wafer processing method are included. The wafer processing method includes the following steps. A wafer is provided having a first surface and a second surface opposite to the first surface. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, and a second portion of the first surface is exposed by the fixture pattern. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and the second surface of the wafer is ground.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Khalajzadeh, Vahid
Bhagavat, Sumeet S.
Abstract
A computer device is programmed to store a model for converting shape maps to simulate a portion of an assembly line, receive scan data of a first inspection of a product being assembled, generate a shape map from the scan data of the first inspection, execute the model using the shape map as an input to generate a final shape map of the product, compare the final shape map to one or more thresholds, determine if the final shape map exceeds at least one of the one or more thresholds, and if the determination is that the final shape map exceeds at least one of the one or more thresholds, cause the first device to be adjusted.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Wu, Chun-Sheng
Huang, Hong-Huei
Chou, Wei-Chen
Lin, Chen-Yi
Tsai, Feng-Chien
Lu, Zheng
Abstract
Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Liu, Chia Ming
Chen, Chien Ming
Wang, Jui Hung
Chen, Hao
Abstract
A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor by tools other than of rotary type, e.g. reciprocating tools
56.
INGOT PULLER APPARATUS HAVING SILICON FEED TUBES WITH KICK PLATES
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Wu, Chun-Sheng
Huang, Hong-Huei
Chou, Wei-Chen
Lin, Chen-Yi
Tsai, Feng-Chien
Lu, Zheng
Abstract
Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Khalajzadeh, Vahid
Bhagavat, Sumeet S.
Abstract
A computer device is programmed to store a model for converting shape maps to simulate a portion of an assembly line, receive scan data of a first inspection of a product being assembled, generate a shape map from the scan data of the first inspection, execute the model using the shape map as an input to generate a final shape map of the product, compare the final shape map to one or more thresholds, determine if the final shape map exceeds at least one of the one or more thresholds, and if the determination is that the final shape map exceeds at least one of the one or more thresholds, cause the first device to be adjusted.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control (DNC), flexible manufacturing systems (FMS), integrated manufacturing systems (IMS), computer integrated manufacturing (CIM)
58.
SYSTEMS AND METHODS FOR PRODUCING EPITAXIAL WAFERS
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hsu, Chih-Yuan
Tu, Chun-Chin
Yang, Yau-Ching
Chen, Shih-Chiang
Abstract
A method of producing an epitaxial semiconductor wafer includes measuring one or more epitaxial semiconductor wafers to determine an epitaxial deposition layer profile produced by an epitaxy apparatus. The method also includes polishing a semiconductor wafer using a polishing assembly and measuring the polished semiconductor wafer to determine a surface profile of the polished wafer. The method further includes generating a predicted post-epitaxy surface profile of the polished wafer by comparing the surface profile of the polished wafer and the determined epitaxial deposition layer profile produced by the epitaxy apparatus. The method also includes determining a predicted post-epitaxy parameter based on the predicted post-epitaxy surface profile and adjusting, based on the predicted post-epitaxy parameter, a process condition of the polishing assembly.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Liu, Qingmin
Liang, Haihe
Yang, Junting
Abstract
Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.
F26B 21/14 - Arrangements for supplying or controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam
60.
METHODS FOR STRIPPING AND CLEANING SEMICONDUCTOR STRUCTURES
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Liu, Qingmin
Liang, Haihe
Yang, Junting
Abstract
Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Abedijaberi, Arash
Thomas, Shawn George
Abstract
A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Ryu, Jaewoo
Lee, Hyungmin
Abstract
Methods for producing a product ingot from a silicon melt held within a crucible are disclosed. The methods involve evaluating one or more ingot puller apparatus to determine if the apparatus is capable of producing low oxygen content silicon product ingots. A sample rod is pulled from the silicon melt and the oxygen content of the sample rod is measured.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Ryu, Jaewoo
Lee, Hyungmin
Abstract
Methods for producing a product ingot from a silicon melt held within a crucible are disclosed. The methods involve evaluating one or more ingot puller apparatus to determine if the apparatus is capable of producing low oxygen content silicon product ingots. A sample rod is pulled from the silicon melt and the oxygen content of the sample rod is measured.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Samanta, Gaurab
Daggolu, Parthiv
Bhagavat, Sumeet
Basak, Soubir
Zhang, Nan
Abstract
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
65.
METHODS FOR MANUFACTURING A SEMICONDUCTOR WAFER USING A PREHEAT RING IN A WAFER REACTOR
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hu, Chieh
Tu, Chun-Chin
Abstract
A method of manufacturing a semiconductor wafer in a reaction apparatus comprising channeling a process gas into a reaction chamber through the process gas inlet and heating the process gas with the preheat ring having an edge bar. The method also includes adjusting at least one of a velocity and a direction of the process gas with the edge bar, and depositing a layer on the semiconductor wafer with the process gas, wherein the edge bar facilitates forming a uniform thickness of the layer on the semiconductor wafer.
C30B 25/10 - Heating of the reaction chamber or the substrate
C30B 25/14 - Feed and outlet means for the gases; Modifying the flow of the reactive gases
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Zepeda, Salvador
Boegemann, Iii, Patrick Fredrick
Luter, William
Abstract
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
C30B 15/10 - Crucibles or containers for supporting the melt
B28B 7/16 - Moulds for making shaped articles with cavities or holes open to the surface
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
B28B 1/26 - Producing shaped articles from the material by slip-casting, i.e. by casting a suspension or dispersion of the material in a liquid-absorbent or porous mould, the liquid being allowed to soak into or pass through the walls of the mould; Moulds therefor
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Porrini, Maria
Pannocchia, Matteo
Abstract
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Po Jung
Shih, Ying-Ru
Tsao, Chenghan
Abstract
A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface of the polarity inversion layer. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.
H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
69.
INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL OR FROM THE SILICON FEED TUBE
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Pannocchia, Matteo
Porrini, Maria
Abstract
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Seacrist, Michael R.
Standley, Robert W.
Libbert, Jeffrey L.
Sreedharamurthy, Hariprasad
Jensen, Leif
Abstract
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
71.
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Liu, Jia-Zhe
Huang, Yen Lun
Chuang, Chih-Yuan
Liu, Che Ming
Hsu, Wen-Ching
Lin, Manhsuan
Abstract
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
72.
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Pannocchia, Matteo
Porrini, Maria
Abstract
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hsu, Chih Yuan
Lin, Jen Chieh
Hu, Chieh
Huang, Wei Chang
Yang, Yau-Ching
Abstract
A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Liang, Hsiu Chi
Abstract
An ingot evaluation method and a detecting apparatus are provided. Defect information of a wafer is obtained from an ingot. The defect information includes a position of at least one defect identified by optical detection. A center-of-gravity position of the defect is determined according to the defect information. Uniformity of the defect is evaluated according to the center-of-gravity position. The uniformity is related to quality of a processed wafer.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Chi, Sherry
Huang, Hanchung
Lin, Patrick
Abstract
Methods for polishing semiconductor substrates are disclosed. The methods may involve alternating a first and second polishing slurry during polishing. The first and second slurries each contain silica particles with the silica particles of the first slurry containing more silica than the particles of the second slurry. By alternating between first and second polishing slurries, the polishing method may improve wafer flatness.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Nakajima, Kazuo
Nakanishi, Masami
Su, Yu Sheng
Hsu, Wen-Ching
Abstract
A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided. In the growing step, the Si ingot single crystal is grown in silicon melt in crucible, and the growing step includes providing a low-temperature region in the Si melt and providing a silicon seed to contact the melt surface of the silicon melt to start crystal growth, and silicon single crystal grows along the melt surface of the silicon melt and toward the inside of the silicon melt. In the temperature gradient controlling step, the under-surface temperature gradient of the silicon single crystal is G1, the above-surface temperature gradient of the silicon single crystal is G2, G1 and G2 satisfy: G2/G1<6. The step of controlling the temperature gradient of silicon single crystal is repeated to obtain the Si ingot single crystal.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 15/10 - Crucibles or containers for supporting the melt
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Peidous, Igor
Libbert, Jeffrey L.
Abstract
A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and an isolation region that impedes the transfer of charge carriers along the surface of the handle substrate and reduces parasitic coupling between RF devices.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
78.
METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Luter, William L.
Sreedharamurthy, Hariprasad
Haringer, Stephan
Phillips, Richard J.
Zhang, Nan
Wu, Yu-Chaio
Abstract
Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
79.
INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Luter, William L.
Sreedharamurthy, Hariprasad
Haringer, Stephan
Phillips, Richard J.
Zhang, Nan
Wu, Yu-Chaio
Abstract
Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
80.
CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGE
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Tosi, Paolo
Pannocchia, Matteo
Scala, Roberto
Abstract
Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Hudson, Carissima Marie
Abstract
Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array may be made of quartz particles that are interconnected by linking members.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Tosi, Paolo
Pannocchia, Matteo
Scala, Roberto
Abstract
Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Pannocchia, Matteo
Marchese, Francesca
Ho Wai Kitt, James
Abstract
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Phillips, Richard Joseph
Abstract
Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array is made of quartz particles that are interconnected by linking members.
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
C30B 15/24 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Tzu-Yao
Liu, Jia-Zhe
Shih, Ying-Ru
Abstract
A semiconductor epitaxy structure includes a silicon carbide substrate, a nucleation layer, a gallium nitride buffer layer, and a stacked structure. The nucleation layer is formed on the silicon carbide substrate, the gallium nitride buffer layer is disposed on the nucleation layer, and the stacked structure is formed between the nucleation layer and the gallium nitride buffer layer. The stacked structure includes: a plurality of silicon nitride (SiNx) layers and a plurality of aluminum gallium nitride (AlxGa1-xN) layers alternately stacked, wherein the first layer of the plurality of silicon nitride layers is in direct contact with the nucleation layer.
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
86.
METHOD FOR CALCULATING OBJECT PICK-AND-PLACE SEQUENCE AND ELECTRONIC APPARATUS FOR AUTOMATIC STORAGE PICK-AND-PLACE
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Li, Chia-Lin
Wang, Shang-Chi
Hsu, Chi Yuan
Wu, Han-Zong
Abstract
A method for calculating an object pick-and-place sequence and an electronic apparatus for automatic storage pick-and-place are provided. When a warehousing operation is to be performed, the following steps are performed. A weight of an object to be stocked that is to be put on a shelf is obtained. The weight is substituted into a plurality of coordinate positions corresponding to a plurality of unused grid positions respectively, so as to calculate a plurality of estimated center of gravity positions. Whether the estimated center of gravity positions are located within a balance standard area is determined so as to sieve out a plurality of candidate grid positions from these unused grid positions. One of the candidate grid positions is selected as a recommended position of the object to be stocked.
B65G 1/137 - Storage devices mechanical with arrangements or automatic control means for selecting which articles are to be removed
G06Q 10/04 - Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem"
G06Q 10/08 - Logistics, e.g. warehousing, loading or distribution; Inventory or stock management
G01G 19/52 - Weighing apparatus combined with other objects, e.g. with furniture
87.
WAFER JIG, WAFER STRUCTURE AND WAFER PROCESSING METHOD
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Wen, Chan-Ju
Tsai, Chia-Chi
Wu, Han-Zong
Abstract
Provided is a wafer jig including a bottom wall and a ring-shaped side wall. The bottom wall has a supporting surface. The ring-shaped side wall is connected to a periphery of the bottom wall. The ring-shaped side wall includes at least two step portions. The two step portions include a first step portion and a second step portion. The first step portion is connected between the supporting surface and the second step portion, and the first step portion protrudes along a direction toward a center of the bottom wall. The ring-shaped side wall surrounds the center. In addition, a wafer structure and a wafer processing method are also provided.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
88.
MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE CRYSTAL SILICON INGOT PRODUCTION
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Ryu, Jaewoo
Seacrist, Michael Robbin
Abstract
Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The model may output a pre-anneal wafer resistivity target range. The single crystal silicon ingot production process may be modeled to determine a counter-doping schedule to achieve the pre-anneal wafer resistivity target range across a longer length of the main body of the ingot.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Poy, Pier Giulio
Finotti, Giuseppe
Gamarra, Silvano
Abstract
An epitaxial reactor system includes a reactor, a cooling circuit, and a controller. The reactor includes a reaction chamber having an upper wall and a lower wall, an upper module positioned above the upper wall, and a lower module positioned below the lower wall. The cooling circuit includes a blower to circulate fluid within the upper module and the lower module and a damper selectably positioned to control an amount of fluid flow provided to each of the upper module and the lower module. The damper is coupled to a damper actuator that adjusts a position of the damper. The system further includes a controller configured to: receive epitaxial process information associated with the reactor, generate a blower output and a damper position output based on the epitaxial process information, transmit the blower output to the blower, and transmit the damper position output to the damper actuator.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
90.
SYSTEMS AND METHODS FOR DYNAMIC CONTROL OF COOLING FLUID FLOW IN AN EPITAXIAL REACTOR FOR SEMICONDUCTOR WAFER PROCESSING
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Gamarra, Silvano
Poy, Pier Giulio
Finotti, Giuseppe
Abstract
An epitaxial reactor system includes a reactor, a cooling circuit, and a controller. The reactor includes a reaction chamber having an upper wall and a lower wall, an upper module positioned above the upper wall, and a lower module positioned below the lower wall. The cooling circuit includes a blower to circulate fluid within the upper module and the lower module and a damper selectably positioned to control an amount of fluid flow provided to each of the upper module and the lower module. The damper is coupled to a damper actuator that adjusts a position of the damper. The system further includes a controller configured to: receive epitaxial process information associated with the reactor, generate a blower output and a damper position output based on the epitaxial process information, transmit the blower output to the blower, and transmit the damper position output to the damper actuator.
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
91.
MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE CRYSTAL SILICON INGOT PRODUCTION
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Hudson, Carissima Marie
Ryu, Jaewoo
Seacrist, Michael Robbin
Abstract
Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The model may output a pre-anneal wafer resistivity target range. The single crystal silicon ingot production process may be modeled to determine a counter-doping schedule to achieve the pre-anneal wafer resistivity target range across a longer length of the main body of the ingot.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
CRYSTAL PULLING SYSTEMS HAVING COMPOSITE POLYCRYSTALLINE SILICON FEED TUBES, METHODS FOR PREPARING SUCH TUBES, AND METHODS FOR FORMING A SINGLE CRYSTAL SILICON INGOT
GLOBALWAFERS CO., LTD. (Taiwan, Province of China)
Inventor
Zepeda, Salvador
Luter, William
Phillips, Richard Joseph
Abstract
Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for forming such tubes, and methods for forming a single crystal silicon ingot with use of such tubes. The composite polycrystalline silicon feed tubes include quartz and at least one dopant. The composite polycrystalline silicon feed tube may be made by a slip cast method.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C04B 35/14 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on silica
93.
INGOT PULLER APPARATUS HAVING HEAT SHIELDS WITH FEET HAVING AN APEX
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Ke, Jiaying
Bhagavat, Sumeet S.
Ryu, Jaewoo
Meyer, Benjamin
Luter, William
Hudson, Carissima Marie
Abstract
Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
94.
CRYSTAL PULLING SYSTEMS HAVING COMPOSITE POLYCRYSTALLINE SILICON FEED TUBES, METHODS FOR PREPARING SUCH TUBES, AND METHODS FOR FORMING A SINGLE CRYSTAL SILICON INGOT
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Phillips, Richard Joseph
Zepeda, Salvador
Luter, William
Abstract
Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for forming such tubes, and methods for forming a single crystal silicon ingot with use of such tubes. The composite polycrystalline silicon feed tubes include quartz and at least one dopant. The composite polycrystalline silicon feed tube may be made by a slip cast method.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
B28B 1/26 - Producing shaped articles from the material by slip-casting, i.e. by casting a suspension or dispersion of the material in a liquid-absorbent or porous mould, the liquid being allowed to soak into or pass through the walls of the mould; Moulds therefor
B28B 11/24 - Apparatus or processes for treating or working the shaped articles for curing, setting or hardening
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Peidous, Igor
Jones, Andrew M
Kommu, Srikanth
Mendez, Horacio Josue
Abstract
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Wang, Shang-Chi
Lee, Chia-Jung
Lin, Bo-Ting
Tsai, Chia-Chi
Abstract
A method for identifying a wafer is provided, which includes the following steps. A marked frame is obtained from a wafer inspection picture. A gray scale index corresponding to the marked frame is calculated based on a gray scale value corresponding to each of multiple pixels included in the marked frame. The gray scale index indicates a proportion of pixels whose gray scale values are greater than a specified value. Whether a trace pattern in the marked frame is a scratch or a grain boundary is determined based on the gray scale index.
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Seacrist, Michael R.
Standley, Robert W.
Libbert, Jeffrey L.
Sreedharamurthy, Hariprasad
Jensen, Leif
Abstract
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Lin, Ching-Shan
Abstract
The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide ingot. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 μm or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA/cm2 or less:
The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide ingot. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 μm or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA/cm2 or less:
D=(BPD1−BPD2)/BPD1≤25% (1).
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Wang, Gang
Abstract
Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
GlobalWafers Co., Ltd. (Taiwan, Province of China)
Inventor
Chu, Yung Hsing
Chou, Yen-Chun
Yang, Yau-Ching
Hong, Jing Ru
Lin, Shan-Hui
Abstract
A method for processing semiconductor wafers includes obtaining measurement data of an edge profile of a semiconductor wafer processed by a front-end process tool. The method includes determining an edge profile center point based on the measurement data, generating a raw height profile, and generating an ideal edge profile. The method further includes generating a Gapi edge profile of the semiconductor wafer based on the raw height profile and the ideal edge profile and calculating a Gapi edge value of the semiconductor wafer based on the Gapi edge profile. The generated Gapi edge profile and/or the calculated Gapi edge value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.
B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components