Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H04B 10/25 - Arrangements specific to fibre transmission
A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
3.
HIGH SPEED AND MULTI-CONTACT LEDS FOR DATA COMMUNICATION
An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p-doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Optical interconnects for IC chips may include optical sources and receivers integrated with the IC chips. MicroLEDs may be mounted on an interconnect layer of the IC chip, and embedded within a waveguide. Photodetectors to receive light from the waveguide may be fabricated in a top surface of a semiconductor substrate, below a level of the interconnect layer, but with a passageway for light through the interconnect layer.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
G02B 6/42 - Coupling light guides with opto-electronic elements
An optical interconnect may provide for optical communications between two IC chips. The optical interconnect may include an array of optoelectronic elements, for example microLEDs and photodetectors, with the array including a plurality of sub-arrays. A fiber bundle of optical fibers may couple the optoelectronic elements, and the fiber bundle may include a plurality of sub-bundles, with for example one sub-bundle for coupling pairs of sub-arrays. Fibers of each sub-bundle may be accurately positioned with respect to one another.
A multi-layer planar waveguide may be used in providing an interconnect for inter-chip and/or intra-chip signal transmission. Various embodiments to transmit optical signals are disclosed, along with designs of microLED optical assemblies, photodetector optical assemblies, waveguides, and multi-layer planar waveguides.
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H04B 10/25 - Arrangements specific to fibre transmission
G02B 6/04 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
9.
COUPLING MICROLEDS TO OPTICAL COMMUNICATION CHANNELS
Light from one or more microLEDs may be coupled into multiple waveguide cores. Parabolic reflectors, truncated parabolic reflectors, and encapsulants may be used to increase fraction of emitted light coupled into the waveguide cores.
Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/42 - Coupling light guides with opto-electronic elements
Optical chip-to-chip interconnects may use microLEDs as light sources. The interconnected chips may be on a same substrate. A pair of endpoint chips may each have associated optical transceiver subsystems, with transceiver circuitry in transceiver chips. Optical communications may be provided between the optical transceiver subsystems, with the optical transceiver subsystems in communication with their associated endpoint chips by way of metal layers in the substrate.
For optical communications between semiconductor ICs, optical transceiver assembly subsystems may be integrated with a processor. The optical transceiver assembly subsystems may be monolithically integrated with processor ICs or they may be provided in separate optical transceiver ICs coupled to or attached to the processor ICs.
A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
G02B 6/42 - Coupling light guides with opto-electronic elements
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
15.
PARALLEL MICROLED-BASED FREE SPACE OPTICAL INTERCONNECTS
Optically coupling two or more optical transceiver integrated circuits (OTRIC) using OTRIC-on-substrate assemblies is disclosed. The optical transceiver integrated circuits may be attached to different substrates, where the substrates may allow the passage of optical signals to and from the optical transceiver integrated circuits. The OTRIC-on-substrate assemblies may comprise one or more optoelectronic device arrays, lenses and mirrors, mounts, and optical transmission medium. The optical transmission medium may be free space or and optical fiber. An optical coupling mechanism may be used in conjunction with the OTRIC-on-substrate assemblies to link optical signals between the optical transceiver integrated circuits.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
Optically coupling two or more optical transceiver integrated circuits (OTRIC) using OTRIC-on-substrate assemblies is disclosed. The optical transceiver integrated circuits may be attached to different substrates, where the substrates may allow the passage of optical signals to and from the optical transceiver integrated circuits. The OTRIC-on-substrate assemblies may comprise one or more optoelectronic device arrays, lenses and mirrors, mounts, and optical transmission medium. The optical transmission medium may be free space or and optical fiber. An optical coupling mechanism may be used in conjunction with the OTRIC-on-substrate assemblies to link optical signals between the optical transceiver integrated circuits.
A packaging and assembly of a parallel optical link is disclosed. The packaging and assembly may have four major parts: assembly of the optical transceiver die, 2.5D package assembly, package attachment to a system printed circuit board, and optical coupling attachment. A frame and a removable lid may be attached to the optical transceiver die. The lid may protect the optical transceiver array of the optical transceiver die, and the frame may help in aligning optical coupling assembly with the optical transceiver array.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 31/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
A packaging and assembly of a parallel optical link is disclosed. The packaging and assembly may have four major parts: assembly of the optical transceiver die, 2.5D package assembly, package attachment to a system printed circuit board, and optical coupling attachment. A frame and a removable lid may be attached to the optical transceiver die. The lid may protect the optical transceiver array of the optical transceiver die, and the frame may help in aligning optical coupling assembly with the optical transceiver array.
An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
A parallel optical interconnect using a flexible waveguide array to transmit optical signals between transceivers is disclosed. The flexible waveguide array may have a plurality of waveguide cores formed between cladding attached to a flexible substrate. The ends of the flexible waveguide array may be connected to connector housings having the transmitters and receivers of the transceivers. The structure of the flexible waveguide array may be configured to be bendable and to also transmit both optical and electrical signals.
A parallel optical interconnect having an optoelectronic substrate connected to a transceiver electronics substrate is disclosed. The optoelectronic substrate may hold optical transmitters and receivers and be electrically connected to the transceiver electronics substrate that may hold transmitter and receiver circuitries. The two substrates may be electrically connected with each other by inter-substrate interconnects, and the optoelectronic substrate may have through-substrate vias connecting the transmitters and receivers to the inter-substrate interconnects.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
A parallel optical interconnect using a flexible waveguide array to transmit optical signals between transceivers is disclosed. The flexible waveguide array may have a plurality of waveguide cores formed between cladding attached to a flexible substrate. The ends of the flexible waveguide array may be connected to connector housings having the transmitters and receivers of the transceivers. The structure of the flexible waveguide array may be configured to be bendable and to also transmit both optical and electrical signals.
An optical data link using an array of GaN based microLEDs, plastic optical fibers, and photodetectors with lateral structures is disclosed. The array of microLEDs may utilize a wavelength range that reduces transmission loss and may be driven at an optimal current density to achieve the desired radiative efficiency. The structure of the microLED may be in the form of a p-n junction and utilize p-doping in the recombination region near the n-region. The optical data link may also be bidirectional.
G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
An optical data link using an array of GaN based microLEDs, plastic optical fibers, and photodetectors with lateral structures is disclosed. The array of microLEDs may utilize a wavelength range that reduces transmission loss and may be driven at an optimal current density to achieve the desired radiative efficiency. The structure of the microLED may be in the form of a p-n junction and utilize p-doping in the recombination region near the n-region. The optical data link may also be bidirectional.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
In package intra-chip and/or inter-chip optical communications are provided using microLEDs and photodetectors mounted to integrated circuit (IC) chips and/or to transceiver dies associated with the IC chips. Light from the LEDs may pass through waveguides on or in a substrate to which the IC chips are mounted or which couple the IC chips.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
Parallel optical interconnects may be used to transmit signals produced by integrated circuits. A parallel optical interconnect may be in the form of a multicore optical fiber and one or more optical coupling assemblies optically connecting a first optical transceiver array and a second optical transceiver array. The multicore optical fiber may have multiple fiber elements with each having a core surrounded by cladding, and the one or more optical coupling assemblies may have refractive and/or reflective elements. In this way, light produced by one transceiver array may be transmitted through the multicore optical fiber and be received by the other transceiver array.
Parallel optical interconnects may be used to transmit signals produced by integrated circuits. A parallel optical interconnect may be in the form of a multicore optical fiber and one or more optical coupling assemblies optically connecting a first optical transceiver array and a second optical transceiver array. The multicore optical fiber may have multiple fiber elements with each having a core surrounded by cladding, and the one or more optical coupling assemblies may have refractive and/or reflective elements. In this way, light produced by one transceiver array may be transmitted through the multicore optical fiber and be received by the other transceiver array.
G02B 6/04 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
30.
Bit-wise inverse multiplexing for optical channels utilizing microLEDs
An optical communication system may include microLEDs for use in communicating data between chips or multi-chip modules. The number of microLEDs may be greater than a number of electrical data lines for carrying data to be communicated. Signals on the electrical data lines may be inverse multiplexed, for example to allow for operation of the microLEDs at a rate slower than operation of electrical circuitry generating signals on the electrical data lines.
An optical communication system may include microLEDs for use in communicating data between chips or multi-chip modules. The number of microLEDs may be greater than a number of electrical data lines for carrying data to be communicated. Signals on the electrical data lines may be inverse multiplexed, for example to allow for operation of the microLEDs at a rate slower than operation of electrical circuitry generating signals on the electrical data lines.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
An optical interconnect may provide for optical communications between two IC chips. The optical interconnect may include an array of optoelectronic elements, for example microLEDs and photodetectors, with the array including a plurality of sub-arrays. A fiber bundle of optical fibers may couple the optoelectronic elements, and the fiber bundle may include a plurality of sub-bundles, with for example one sub-bundle for coupling pairs of sub-arrays. Fibers of each sub-bundle may be accurately positioned with respect to one another.
An optical interconnect may provide for optical communications between two IC chips. The optical interconnect may include an array of optoelectronic elements, for example microLEDs and photodetectors, with the array including a plurality of sub-arrays. A fiber bundle of optical fibers may couple the optoelectronic elements, and the fiber bundle may include a plurality of sub-bundles, with for example one sub-bundle for coupling pairs of sub-arrays. Fibers of each sub-bundle may be accurately positioned with respect to one another.
Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/42 - Coupling light guides with opto-electronic elements
36.
P-type doping in GaN LEDs for high speed operation at low current densities
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H04B 10/25 - Arrangements specific to fibre transmission
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
38.
P-TYPE DOPING IN GAN LEDS FOR HIGH SPEED OPERATION AT LOW CURRENT DESITIES
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
The present invention relates to LEDs for data communications, and more particularly to GaN based LEDs and data communications systems using high speed GaN based LEDs. The GaN based LED comprises: a plurality of alternating quantum well layers and barrier layers between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with the barrier layers being doped, but only in a central portion of each barrier layer.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Optical interconnects for IC chips may include optical sources and receivers integrated with the IC chips. MicroLEDs may be mounted on an interconnect layer of the IC chip, and embedded within a waveguide. Photodetectors to receive light from the waveguide may be fabricated in a top surface of a semiconductor substrate, below a level of the interconnect layer, but with a passageway for light through the interconnect layer.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
Optical interconnects for IC chips may include optical sources and receivers integrated with the IC chips. MicroLEDs may be mounted on an interconnect layer of the IC chip, and embedded within a waveguide. Photodetectors to receive light from the waveguide may be fabricated in a top surface of a semiconductor substrate, below a level of the interconnect layer, but with a passageway for light through the interconnect layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 31/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
G02B 6/42 - Coupling light guides with opto-electronic elements
A multi-layer planar waveguide may be used in providing an interconnect for inter-chip and/or intra-chip signal transmission. Various embodiments to transmit optical signals are disclosed, along with designs of microLED optical assemblies, photodetector optical assemblies, waveguides, and multi-layer planar waveguides.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A multi-layer planar waveguide may be used in providing an interconnect for inter-chip and/or intra-chip signal transmission. Various embodiments to transmit optical signals are disclosed, along with designs of microLED optical assemblies, photodetector optical assemblies, waveguides, and multi-layer planar waveguides.
For optical communications between semiconductor ICs, optical transceiver assembly subsystems may be integrated with a processor. The optical transceiver assembly subsystems may be monolithically integrated with processor ICs or they may be provided in separate optical transceiver ICs coupled to or attached to the processor ICs.
For optical communications between semiconductor ICs, optical transceiver assembly subsystems may be integrated with a processor. The optical transceiver assembly subsystems may be monolithically integrated with processor ICs or they may be provided in separate optical transceiver ICs coupled to or attached to the processor ICs.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
A time of flight system may include one or more microLEDs and a photodetector monolithically integrated with integrated circuitry of the time of flight system. The microLEDs may be doped to provide increased speed of operation.
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A time of flight system may include one or more microLEDs and a photodetector monolithically integrated with integrated circuitry of the time of flight system. The microLEDs may be doped to provide increased speed of operation.
H01L 31/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
An LED may be optimized for high speed operation for optical communication systems in a variety of ways. The LED, which may be a microLED, may include dopants and dopant levels allowing for increased speed of operation, the LED may include interlayers, and the LED may include other features.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
An LED may be optimized for high speed operation for optical communication systems in a variety of ways. The LED, which may be a microLED, may include dopants and dopant levels allowing for increased speed of operation, the LED may include interlayers, and the LED may include other features.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
A lateral p-i-n photodetector may be made using CMOS compatible processes. CMOS circuitry may be included on a die including the lateral p-i-n photodetector. The lateral p-i-n photodetector may be formed in a device layer of the die, with a buried oxide under the device layer. P-type implants may bound a region defined by the lateral p-i-n photodetector.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
G02B 6/42 - Coupling light guides with opto-electronic elements
A lateral p-i-n photodetector may be made using CMOS compatible processes. CMOS circuitry may be included on a die including the lateral p-i-n photodetector. The lateral p-i-n photodetector may be formed in a device layer of the die, with a buried oxide under the device layer. P-type implants may bound a region defined by the lateral p-i-n photodetector.
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/04 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
H04B 10/25 - Arrangements specific to fibre transmission
G02B 6/04 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
Optical chip-to-chip interconnects may use microLEDs as light sources. The interconnected chips may be on a same substrate. A pair of endpoint chips may each have associated optical transceiver subsystems, with transceiver circuitry in transceiver chips. Optical communications may be provided between the optical transceiver subsystems, with the optical transceiver subsystems in communication with their associated endpoint chips by way of metal layers in the substrate.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
57.
Parallel optical communication channels using microLEDs
Coupling of light from large angular distribution microLEDs into smaller angular acceptance distribution of transmission channels is performed using optical elements.
Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H04J 14/02 - Wavelength-division multiplex systems
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Optical chip-to-chip interconnects may use microLEDs as light sources. The interconnected chips may be on a same substrate. A pair of endpoint chips may each have associated optical transceiver subsystems, with transceiver circuitry in transceiver chips. Optical communications may be provided between the optical transceiver subsystems, with the optical transceiver subsystems in communication with their associated endpoint chips by way of metal layers in the substrate.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
Optical interconnect topologies may be provided using microLEDs. The topologies may interconnect ICs. The optical interconnect topologies may be used in some instances in place of electrical busses.
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
63.
PACKAGING FOR MICROLEDS FOR CHIP TO CHIP COMMUNICATION
A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
64.
Optical transceiver design for short distance communication systems based on microLEDs
MicroLEDs may be used for short-range optical communications. Signal equalization may be used to decrease distortion in transmitted and/or received information, including with the use of multi-level modulation formats.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
H04L 25/03 - Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
66.
Systems using fan-in and fan-out microLED-based interconnects
Optical interconnect topologies may be provided using microLEDs. The topologies may interconnect ICs. The optical interconnect topologies may be used in some instances in place of electrical busses.
An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
68.
HIGH SPEED AND MULTI-CONTACT LEDS FOR DATA COMMUNICATION
An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p-doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.
An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p-doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
G02B 6/42 - Coupling light guides with opto-electronic elements
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
MicroLEDs may be used in providing intra-chip optical communications and/or inter-chip optical communications, for example within a multi-chip module or semiconductor package containing multiple integrated circuit semiconductor chips. In some embodiments the integrated circuit semiconductor chips may be distributed across different shelves in a rack. The optical interconnections may make use of optical couplings, for example in the form of lens(es) and/or mirrors. In some embodiments arrays of microLEDs and arrays of photodetectors are used in providing parallel links, which in some embodiments are duplex links.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
In package intra-chip and/or inter-chip optical communications are provided using microLEDs and photodetectors mounted to integrated circuit (IC) chips and/or to transceiver dies associated with the IC chips. Light from the LEDs may pass through waveguides on or in a substrate to which the IC chips are mounted or which couple the IC chips.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/42 - Coupling light guides with opto-electronic elements
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
In package intra-chip and/or inter-chip optical communications are provided using microLEDs and photodetectors mounted to integrated circuit (IC) chips and/or to transceiver dies associated with the IC chips. Light from the LEDs may pass through waveguides on or in a substrate to which the IC chips are mounted or which couple the IC chips.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
patents
