In at least one embodiment, the power semiconductor device (1) comprises
a semiconductor body (2), and
a protection layer (3) at the semiconductor body (2), wherein
the protection layer (3) comprises a material having a surface energy of at most 0.1 mJ/m2, and
the protection layer (3) comprises a geometric structuring (33) having a feature size (F) of at least 0.04 μm and of at most 0.1 mm, seen in top view of the protection layer (3).
A semiconductor device with a semiconductor body is specified, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface. The semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction, wherein the first semiconductor layer is more heavily doped than the second semiconductor layer. A side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction comprises a first partial region and a second partial region, wherein the first partial region and the second partial region delimit the first semiconductor layer in regions.
A power semiconductor device (1) comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22), a trench (4) extending from the first main surface (21) into the semiconductor body (2) in the vertical direction, and an insulated trench gate electrode (3) that is formed on the first main surface (21) and extends into the trench (4) is specified, wherein the trench (4) is subdivided along a main extension direction of the trench (4) in a plurality of segments (41) and the insulated trench gate electrode (3) continuously extends over the plurality of segments (41).
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
4.
A WINDING, A TRANSFORMER AND A TRANSFORMER ARRANGEMENT
A winding for a phase winding of a transformer. The winding has coil turns around a coil axis. The winding is adapted to transform voltage in a transformer at a predetermined frequency, when the transformer is operating. The winding is excited by a mechanical load having a main frequency corresponding to the predetermined frequency multiplied by two and has vibration modes. The combination of load and vibration modes results in a vibration of the winding. The winding has a set of vibration modes. Each vibration mode has a vibration mode frequency, wherein a main contributing vibration mode of the set of vibration modes is the vibration mode resulting in the largest acoustic power of the vibration modes. The winding is excited by the load and a stiffness difference between a first winding portion stiffness and a second winding portion stiffness is such that the acoustic power is minimized at said main frequency.
H01F 27/00 - MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Details of transformers or inductances, in general
A contact unit for an on-load tap changer comprises a connector body and a contact holder coupled to each other, wherein the connector body is configured to connect the contact holder to a contact of the on-load tap changer. The contact unit further comprises a contact element coupled to the contact holder and configured to make electrical contact to a contact element of a contact device for the on-load tap changer. The contact unit further comprises drive and guiding means coupled to the contact holder such that the contact element is movable driven and linearly guided in a direction away from the connector body.
H01H 9/00 - ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES - Details of switching devices, not covered by groups
H01H 1/50 - Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
6.
SWITCHING SYSTEM FOR AN ON-LOAD TAP CHANGER, ON-LOAD TAP CHANGER AND METHOD FOR SWITCHING A TAP CONNECTION OF AN ON-LOAD TAP CHANGER
A switching system for an on-load tap changer includes a rotatable ring stack, wherein the rotatable ring stack is part of an internal Geneva mechanism and a drive system. The ring stack includes a first current carrier ring and a second current carrier ring each of which is selectively electrically coupleable to one of a plurality of contact elements of the tap changer, and a Geneva ring. The drive system includes a driving wheel, wherein the Geneva ring is mechanically coupleable with the driving wheel, such that the Geneva ring is rotatable by the driving wheel, and the first and the second current carrier rings each are coupled with the Geneva ring such that a rotation of Geneva ring causes a joint rotation of the first and the second current carrier ring.
Methods for determining a line fault of a power system. The methods include obtaining sampled values of voltages and currents of phases of a power line in the power system, determining a phase compensation voltage of a first phase and an interphase compensation voltage of an interphase loop between a second phase and a third phase, and detecting the line fault in the first phase and/or the interphase loop by comparing the phase compensation voltage and the interphase compensation voltage.
G01R 31/08 - Locating faults in cables, transmission lines, or networks
G01R 25/00 - Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
H02H 7/22 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for switching devices
The invention relates to a method and system for detecting and mitigating cabling issues with devices connected in industrial redundant networks. An agent runs on each device and generates information about traffic received at the corresponding device. The agent running on a node generates indicators of traffic received at each port, and error rates for traffic at each port. The agent running on a switch generates information about switch misconfiguration by collecting device identifiers for each port of the switch. The agents send the information to a network manager, which determines switch misconfigurations and wrong cabling from the received information. The network manager also mitigates cabling issues by sending a signal to the affected device(s) or sending a communication to mitigate the issue.
Technologies for solar power system performance model tuning are disclosed. In at least one illustrative embodiment, a method of tuning a system performance model for a power plant may comprise estimating an expected output of an inverter of the power plant using the system performance model, obtaining a measured output of the inverter, determining whether a difference between the expected and measured inverter outputs is within a predefined range, and tuning the system performance model using the difference in response to determining that the difference is within the predefined range. The power plant may further comprise at least one solar panel array, and the inverter may be electrically coupled to the at least one solar panel array.
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
H02J 3/00 - Circuit arrangements for ac mains or ac distribution networks
H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
10.
Semiconductor component, motor vehicle, and method for producing a semiconductor component
A semiconductor component, including a support frame and at least one semiconductor module attached to the support frame, wherein the support frame includes a respective passage (on the edge of which a base plate of the semiconductor module rests, wherein the base plate is soldered to the support frame.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
11.
Method for producing a semiconductor module by using adhesive attachment prior to sintering
A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
B60R 16/033 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for supply of electrical power to vehicle subsystems characterised by the use of electrical cells or batteries
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
12.
Half-bridge module with coaxial arrangement of the DC terminals
A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal. The at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H02M 7/00 - Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
H05K 7/14 - Mounting supporting structure in casing or on frame or rack
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
13.
Resin encapsulated power semiconductor module with exposed terminal areas
A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/367 - Cooling facilitated by shape of device
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
14.
Power semiconductor module with low gate path inductance
A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/535 - Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
A power module providing a half bridge comprises at least one substrate and an inner metallization area, two intermediate metallization areas and two outer metallization areas, each of which extends in a longitudinal direction of the at least one substrate; wherein the two intermediate metallization areas are arranged besides the inner metallization area with respect to a cross direction of the at least one substrate and each outer metallization area is arranged beside one of the two intermediate metallization areas with respect to the cross direction; wherein the power module comprises two inner sets of semiconductor switches, each inner set of semiconductor switches bonded to an intermediate metallization area and electrically connected to the inner metallization area, such that the inner sets of semiconductor switches form a first arm of the half bridge; wherein the power module comprises two outer sets of semiconductor switches, each outer set of semiconductor switches bonded to an outer metallization area and electrically connected to an intermediate metallization area, such that the outer sets of semiconductor switches form a second arm of the half bridge.
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A semiconductor module comprises a semiconductor device; a substrate, on which the semiconductor device is attached; a molded encasing, into which the semiconductor device and the substrate are molded; at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device; and an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate, wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.
H01L 23/22 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device
H01L 23/24 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/04 - Containers; Seals characterised by the shape
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
19.
Electric insulation material, an electric device comprising the insulation material and a transformer
An electric insulation material for an electric device includes one or several electrical conductors and an electric insulation material arranged around the conductor or between the conductors, which insulation material is impregnated with a dielectric insulation liquid. The electric insulation material includes a main layer that is provided with a surface layer that has a dielectric constant that is lower than the dielectric constant of the main layer.
Residue perturbation is used for enforcing passivity of a linear response model of an electrical component having n>1 ports. According to an exemplary embodiment, a modal perturbation approach can be used, which allows weighted perturbation of the individual modes by the inverse of the corresponding eigenvalues. This provides superior results if the admittance or impedance matrix of the device has a large eigenvalue spread.
G06F 7/60 - Methods or arrangements for performing computations using a digital non-denominational number representation, i.e. number representation without radix; Computing devices using combinations of denominational and non-denominational quantity representations
A method and device characterize linear properties of an electrical component having n>1 ports. The linear properties of the component are described in a matrix relating a voltage applied to the ports to a current through the ports. A frequency dependence of the matrix is approximated to preserve eigenvalues of the matrix by a pole-residual model. The method includes: (a) obtaining a set of values of the matrix at discrete frequencies, and obtaining eigenvalues and eigenvectors for each value; (b) fitting a set of vector equations to the eigenvalues and eigenvectors with a first set of pole frequencies; and (c) calculating a second set of pole frequencies by a vector fitting process for all modes of an element of the matrix. Steps (b) and (c) are repeated using the second set of pole frequencies in step (c) in a subsequent step (b) until a stop condition is met.
A method and device for determining the linear response of an electrical multi-port component has an “estimation procedure” in which an estimated admittance matrix is determined by applying voltages to the ports of the component and measuring the response of the component. The estimation procedure can e.g. consist of a conventional measurement of the admittance matrix. The method further has a “measurement procedure” in which several voltage patterns are applied to the port. The voltage patterns correspond to the eigenvectors of the estimated admittance matrix. For each applied voltage pattern, the response of the component is measured. This allows to measure the linear response of the component accurately even if the eigenvalues of the admittance matrix differ by several orders of magnitude.
The pressure contact spring (3) according to the invention comprises two contacting regions (31, 32) for contacting metallized contact pads (1, 2), one contacting region comprising a contact tip (31). Arranged between the contacting regions is a compressing region (33). The contact tip is rounded with an outer radius.
The rounded contact tip penetrates only little into the metallization of the contact pad even under high spring force.
H01R 12/00 - Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, ; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
A method and means for diagnosing transformer tap changers is provided. Pressure is monitored in an insulating liquid of a tap changer for a period of time in which switching of the tap changer is carried through. Switching-related information is extracted from the pressure diagram. Quantities from pressure peaks are related to specific arcings of the switching sequence. Early error detection is achieved, whereby transformed failures may be avoided. Repeated measurements may be followed by trend evaluation. If a trend indicating tap changer problems is detected, an alarm signal is triggered. The transformer may be switched off if the pressure exceeds a predetermined emergency value. Information of the base pressure in the tap changer may be extracted and converting it to level of insulating liquid.
H01H 47/00 - Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
25.
Method and system to calculate a demand for energy
A method to calculate energy demand in an energy generation, transmission and distribution network including one or more power plants based on different energy source types including renewable energy, a communications system and one or more local consumption metering units. A customer demand profile for one or more customers is provided. A customer-specified proportion of power demand to be supplied from a given energy source type is registered. A total predicted energy demand dependent is calculated in part on an accumulated demand for the given energy source type.
G06F 17/00 - Digital computing or data processing equipment or methods, specially adapted for specific functions
G06F 19/00 - Digital computing or data processing equipment or methods, specially adapted for specific applications (specially adapted for specific functions G06F 17/00;data processing systems or methods specially adapted for administrative, commercial, financial, managerial, supervisory or forecasting purposes G06Q;healthcare informatics G16H)
A method and apparatus for condition diagnosing of a tap changer immersed in a cooling fluid, controlling and regulating an inductive power device, such as a transformer or reactor. The diagnosing method compares and evaluates expected heat exchanges between the tap changer and ambient air and the inductive power device, an expected amount of heat generated by the tap changer during operation, together with an actual temperature of the fluid. From the actual temperature, expected heat exchanges and expected generated heat, the heat balance in the system may be obtained and is used for disgnosing the operation conditions of the tap changer. The results from the condition diagnosing may be used as indicators that can alarm operators or may be sent as a data signal to remote and/or portable display means, such as a computer.
G01K 1/00 - MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR - Details of thermometers not specially adapted for particular types of thermometer
patents
