|
2022
|
Invention
|
Power semiconductor device with an auxiliary gate structure.
A heterojunction device having at l... |
|
|
Invention
|
Iii-v semiconductor device with integrated power transistor and start-up circuit. We disclose a I... |
|
|
Invention
|
Edge detection circuit. The present disclosure relates to an edge detection circuit configured to... |
|
|
Invention
|
Heterojunction based half bridge.
We describe a heterojunction based half bridge apparatus forme... |
|
|
Invention
|
Iii-nitride power semiconductor based heterojunction diode.
We describe a smart high voltage/pow... |
|
|
Invention
|
Iii-nitride power semiconductor based heterojunction device. An integrated circuit is provided wh... |
|
2021
|
G/S
|
Integrated circuit chips; microprocessors; semiconductor
devices; semiconductor chips; semicondu... |
|
|
G/S
|
Integrated circuit chips; microprocessors; semiconductor devices being electronic semiconductors,... |
|
|
G/S
|
Integrated circuit chips; microprocessors; semiconductor devices; semiconductor chips; semiconduc... |
|
|
Invention
|
Power semiconductor device with an auxiliary gate structure. Power semiconductor devices in GaN t... |
|
|
Invention
|
Iii-v semiconductor device.
A heterojunction device, includes a substrate (4); a Ill-nitride sem... |
|
|
Invention
|
Iii-v semiconductor device. A heterojunction device, includes a substrate (4); a Ill-nitride semi... |
|
2020
|
Invention
|
Power semiconductor device with an auxiliary gate structure. The disclosure relates to a III-nitr... |
|
|
Invention
|
Power semiconductor device with a series connection of two devices. A device includes a heterojun... |
|
|
Invention
|
Iii-v semiconductor device with integrated power transistor and start-up circuit.
We disclose a ... |
|
|
Invention
|
Iii-v semiconductor device with integrated protection functions.
We disclose a Ill-nitride semic... |
|
|
Invention
|
Iii-v semiconductor device with integrated protection functions. We disclose a Ill-nitride semico... |
|
|
Invention
|
Iii-v semiconductor device. A heterojunction device, includes a substrate; a III-nitride semicond... |
|
2019
|
Invention
|
Gallium nitride transistor. A heterojunction power device includes a substrate; a III-nitride sem... |
|
|
Invention
|
Iii-v depletion mode semiconductor device. We disclose herein a depletion mode III-nitride semico... |
|
|
Invention
|
Iii-v semiconductor device with integrated power transistor and start-up circuit. A III-nitride s... |
|
|
Invention
|
Iii-v semiconductor device with integrated protection functions. We disclose a III-nitride semico... |
|
|
Invention
|
Thermal fluid flow sensor. We disclose herewith a heterostructure-based sensor comprising a subst... |
|
2018
|
Invention
|
Power semiconductor device with an auxiliary gate structure. The disclosure relates to power semi... |
|
|
Invention
|
Infra-red devices. We disclose herewith a heterostructure-based infra-red (IR) device comprising ... |
