Abrégé

A control circuit 30 of the present invention comprises: a zero current detection threshold calculation unit 31 which calculates zero current detection thresholds Vth1, Vth2 on the basis of a first divided voltage VFB obtained by dividing an output voltage of a DC conversion circuit 20; a zero current detection unit 32 which detects timing, at which a current flowing through an inductor L becomes zero, by comparing the zero current detection thresholds Vth1, Vth2 calculated by the zero current detection threshold calculation unit 31 and the voltage VFB based on a voltage applied to a switching element Q; and a switching element driving control unit 34 which controls turn-on of the switching element Q on the basis of the timing at which the current flowing through the inductor L, which is detected by the zero current detection unit 32, becomes zero.　According to the control circuit 30 of the present invention, the timing at which the inductor current becomes zero can be detected even in a case, such as immediately after startup, where the output voltage has not increased completely.

Classes IPC  ?

• H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
• H02M 7/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This battery charging device comprises: an electric power generator that generates electric power in accordance with rotation of a rotor and outputs an AC signal that corresponds to the generated electric power; a switching element that rectifies the AC signal outputted by the electric power generator and supplies the rectified AC signal to the battery as charging electric power; a diode that supplies movement electric power to a load unit, the diode being connected between the load unit and an output line of the switching element; a capacitor that is connected to an output line of the diode and is connected in parallel to the load unit; a voltage control unit that controls conduction to the switching element such that the voltage supplied to the load unit becomes an output-target set voltage; and a switching control unit that reduces the set voltage when the battery enters an abnormal state in which the battery cannot be used.

Classes IPC  ?

• H02J 7/34 - Fonctionnement en parallèle, dans des réseaux, de batteries avec d'autres sources à courant continu, p.ex. batterie tampon
• H02H 7/20 - Circuits de protection de sécurité spécialement adaptés pour des machines ou appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou ligne, et effectuant une commutation automatique dans le cas d'un chan pour équipement électronique
• H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries

Abrégé

This battery charging device comprises: a rectifying unit which outputs, as charging power for a battery, direct-current power obtained by rectifying three-phase alternating-current power by means of conduction of switch elements connected to respective output signal lines of the three-phase alternating-current power, the three-phase alternating-current power being output by an electric power generator in accordance with the rotation of a rotor; a power source maintaining switch capable of maintaining a state in which control power for the switch elements, from the battery, can be supplied when a main switch is in an interrupting state stopping the supply of the control power to a power source supply line; and a control unit which controls the conduction of the switch elements and which, if the main switch is turned to the interrupting state, maintains the power source maintaining switch in a state in which the control power for the switch elements can be supplied, and if the rotor is rotating, controls negative electrode side switch elements connected to a negative electrode of the battery to a conducting state.

Classes IPC  ?

• H02J 7/14 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries pour la charge de batteries par des générateurs dynamo-électriques entraînés à vitesse variable, p.ex. sur véhicule

Abrégé

This motor control device includes a control circuit that, in a first period, controls a high-side switching element of a first arm to be on, controls a low-side switching element of the first arm to be off, controls high-side and low-side switching elements of a second arm to be off, controls a high-side switching element of a third arm to be off, and controls a low-side switching element of the third arm to be on, and, in a second period following the first period, controls the high-side switching element of the first arm to be off, controls the low-side switching element of the first arm to be on, controls the high-side switching element of the second arm to be on, controls the low-side switching element of the second arm to be off, controls the high-side switching element of the third arm to be off, and controls the low-side switching element of the third arm to be on.

Classes IPC  ?

• H02P 6/10 - Dispositions pour commander l'ondulation du couple, p.ex. en assurant une ondulation réduite du couple
• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

This electric current detection device comprises: a plurality of first Rogowski coils that detect electric current flowing to first switching elements; a plurality of second Rogowski coils that detect electric current flowing to second switching elements; a plurality of first integral circuits that have a reset function, integrate an output of the first Rogowski coils, and output a first detection signal; a plurality of second integral circuits that have a reset function, integrate an output of the second Rogowski coils, and output a second detection signal; a detection processing unit that detects, on the basis of the first detection signal and the second detection signal, electric current flowing to an inverter part; a first reset output unit that outputs a first reset signal for resetting the plurality of first integral circuits in a first period in which all of the first switching elements are in a non-conducting state; and a second reset output unit that outputs a second reset signal for resetting the plurality of second integral circuits in a second period in which all of the second switching elements are in a non-conducting state.

Classes IPC  ?

• G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs

Abrégé

A semiconductor device 1 according to the present invention comprises a semiconductor substrate 10, a first electrode 20, and an insulating layer 30, wherein the semiconductor substrate 10 has: a first semiconductor region 12 of a first conductivity type (n-type); a second semiconductor region 16 of a second conductivity type (p-type) and formed at a position in contact with the first electrode 20 and the insulating layer 30; and a third semiconductor region 18 of a first conductivity type (n-type) formed in contact with the second semiconductor region 16 so as to surround the second semiconductor region 16 in a plan view. In the semiconductor device 1, when the sum of impurities of the second semiconductor region 16 is S1 and the sum of impurities of the third semiconductor region 18 is S2, the relationship S1

Classes IPC  ?

• H01L 29/872 - Diodes Schottky
• H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/861 - Diodes
• H01L 29/866 - Diodes Zener
• H01L 29/868 - Diodes PIN

Abrégé

The present invention is an electronic module comprising: a first semiconductor element that has a plurality of first electrodes; a second semiconductor element that has a plurality of second electrodes; a capacitor; a substrate that has a first wiring pattern on which the first semiconductor element is mounted, a second wiring pattern on which the second semiconductor element is mounted, and a third wiring pattern; and a plurality of electrical connection members. The first wiring pattern has one part of the first electrodes and another part of the second electrodes connected thereto. The second wiring pattern has one part of the second electrodes and one part of the capacitor connected thereto. The third wiring pattern has another part of the first electrodes and another part of the capacitor connected thereto. The plane of the first electrodes and the plane of the second electrodes are at mutually different height positions. The one part of the first electrodes, the another part of the second electrodes, and the first wiring pattern are connected by one electrical connection member among the plurality of electrical connection members. According to the present invention, an electronic module can be provided that satisfies the requirements of operation stability and reliability even during a high-speed switching operation.

Classes IPC  ?

• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

The present invention provides a plate-like electrical connecting member 110 used to connect an electrode of an electrode-including semiconductor element to a wiring pattern, the electrical connecting member including a semiconductor connection area 118 connected to an electrode of a semiconductor element via a conductive bonding material, a non–semiconductor-connection area 120 not connected to an electrode of a semiconductor element, and a wiring pattern connection area 122 connected to a wiring pattern, wherein a plurality of protrusions 112 are formed in the semiconductor connection area 118 and first through-hole 114 is formed between two adjacent protrusions 112 among the plurality of protrusions 112.　According to the electrical connecting member according to the present invention, the thickness of the conductive bonding material is less likely to be non-uniform.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

Disclosed is a drive device for winding-field-type rotary electrical machines, said drive device comprising: a first switching element between one end of a rotor winding and a high-potential-side line of a power source; a second switching element between the other end of the rotor winding and a low-potential-side line of the power source; and a control device. The control device performs driving in a first mode, in which the states of both the first switching element and the second switching element are switched between an on state and an off state, when the current applied to the rotor winding is to be decreased, and performs driving in a second mode, in which the state of one of the first switching element and the second switching element is maintained in an on state while the state of the other of the first switching element and the second switching element is switched between an on state and an off state, when the current applied to the rotor winding is to be increased.

Classes IPC  ?

• H02P 25/024 - Moteurs synchrones commandés par la fréquence d’alimentation
• H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs

Abrégé

This semiconductor device 100 comprises a semiconductor substrate 110, a plurality of trenches 120, a gate insulation film 122, a gate electrode 124, an interlayer insulation film 130, and a surface electrode 140. The semiconductor substrate 110 has a second-electroconductivity-type projecting region 115 that is formed so as to project from the bottom of a second-electroconductivity-type semiconductor region 113 and is set apart from the trenches 120. The peak position of the impurity concentration in the projecting region 115 is deeper than the bottom of the second-electroconductivity-type semiconductor region 113. The total amount of impurities in a depth-direction cross-section of the projecting region 115 is equal to or less than the total amount of impurities in a depth-direction cross-section of the second-electroconductivity-type semiconductor region 113.　According to this semiconductor device 100, switching loss and gate drive loss are low and parasitic bipolar activity does not readily occur even when the impurity concentration in a first-electroconductivity-type semiconductor layer is high.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ

Abrégé

[Problem] To provide a semiconductor device capable of suppressing channel current without increasing manufacturing processes and accurately forming a channel current suppression structure. [Solution] A semiconductor device 1 according to the present invention comprises: a substrate 10; an epitaxial layer 20 formed on the substrate 10; and an insulating film 35 provided to one surface 20a side of the epitaxial layer 20. An active part 40 provided with a prescribed element and a channel current suppression part 50 of a terminal end part 70 side provided outside the active part 40 are provided on the one surface 20a side of the epitaxial layer 20 with the insulating layer 35 therebetween. The channel current suppression part 50 is provided with a trench 51 for suppressing channel current flowing from the active part 40 to the terminal end part 70.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/872 - Diodes Schottky

Abrégé

[Problem] To provide a thyristor having a desensitized gate sensitivity. [Solution] The present invention is a thyristor comprising: a first P-type semiconductor layer 11; a first N-type semiconductor layer 12 located in contact with the first P-type semiconductor layer; a second P-type semiconductor layer 13 located in contact with the first N-type semiconductor layer; a second N-type semiconductor layer 14 located in contact with the second P-type semiconductor layer; a third P-type semiconductor layer 15a located in contact with the second P-type semiconductor layer, and having a higher impurity concentration than the second P-type semiconductor layer; a gate electrode G; a cathode electrode K; and a fourth P-type semiconductor layer 15b in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer, and having a higher impurity concentration than the second P-type semiconductor layer. The third P-type semiconductor layer and the fourth P-type semiconductor layer are separated by the second P-type semiconductor layer, and the third P-type semiconductor layer and the second N-type semiconductor layer are separated by the second P-type semiconductor layer.

Classes IPC  ?

• H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones

Abrégé

[Problem] To provide a bidirectional thyristor with which (dv/dt)c tolerance can be improved. [Solution] The present invention provides a bidirectional thyristor comprising first and second first conduction type semiconductor layers 11, 21, first and second second conduction type semiconductor layers 13, 12, a plurality of carrier discharge portions 11a disposed in a third second conduction type semiconductor layer, a fourth second conduction type semiconductor layer 15, first and second electrodes 31, 32, a gate electrode 16, and a passivation film 17, wherein: in relation to the plurality of carrier discharge portions 11a, openings are formed in the third second conduction type semiconductor layer 14, the first first conduction type semiconductor layer 11 is positioned in the holes, and the carrier discharge portions 11a are arranged in an interval between a position separated a predetermined distance from the gate electrode and an outer edge of the first electrode, in a plan view; the plurality of carrier discharge portions are disposed so as to be in contact with the outer edge of the first electrode; the outer edge of the first electrode in contact with two or more of the plurality of carrier discharge portions is in contact with the passivation film; and an area of a triangle 33 is less than an area of a rectangle 22 in a plan view.

Classes IPC  ?

• H01L 29/747 - Dispositifs bidirectionnels, p.ex. triacs
• H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones

Abrégé

A battery charging device comprising: an electric generator that outputs an alternating-current signal corresponding to generated electric power; a switching element that rectifies the alternating-current signal output from the electric generator and supplies resultant charging power to a battery; a positive/negative switch determination unit that determines switching of positive and negative voltages of the alternating-current signal; a trigger output unit that, on the basis of a result of the determination by the positive/negative switch determination unit, outputs a trigger signal indicating a switching element conduction timing; a positive/negative determination control unit that detects the voltage of the alternating-current signal to detect the rotational speed of a rotor, and that, if the detected rotational speed is greater than or equal to a predetermined threshold value, causes the positive/negative switch determination unit to additionally maintain the determination of a negative voltage of the alternating-current signal for a predetermined period; and an invalidation control unit that invalidates the function of the positive/negative determination control unit if a load unit that consumes the power generated by the electric generator is connected in the negative voltage period of the alternating-current signal.

Classes IPC  ?

• H02J 7/16 - Régulation du courant ou de la tension de charge par variation de champ

Abrégé

A battery charging device according to one aspect of the present invention comprises: a power generator that generates power in accordance with the rotation of a rotor to output an AC signal corresponding to the generated power; a switching element that rectifies the AC signal outputted from the power generator to supply the rectified signal to a battery as charge power; a positive/negative change determination unit that determines a change of the positive/negative voltages of the AC signal; a trigger output unit that, on the basis of the determination result by the positive/negative change determination unit, outputs a trigger signal indicating the conduction timing of the switching element; and a positive/negative determination control unit that, by detecting the voltage of the AC signal, detects the rotational speed of the rotor, and, when the detected rotational speed has reached a predetermined threshold value or higher, causes the positive/negative change determination unit to additionally maintain the determination of the negative voltage of the AC signal for a predetermined period.

Classes IPC  ?

• H02J 7/14 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries pour la charge de batteries par des générateurs dynamo-électriques entraînés à vitesse variable, p.ex. sur véhicule

Abrégé

This wide gap semiconductor device has a wide gap semiconductor layer 10, and a metal electrode 20 provided in the wide gap semiconductor layer 10. The metal electrode 20 has a single crystal layer 21 having a hexagonal close-packed structure (HCP) in an interface region on the metal electrode 20 side with the wide gap semiconductor layer 10. The single crystal layer 21 has a designated element content range 22 containing O, S, P or Se.

Classes IPC  ?

• H01L 29/47 - Electrodes à barrière de Schottky
• H01L 29/872 - Diodes Schottky

Abrégé

This power control device comprises: a switching substrate comprising a wiring pattern that electrically connects a battery and a three-phase AC motor and a plurality of switching elements connected to the wiring pattern; a control substrate that comprises a first through hole that passes therethrough in the thickness direction thereof and a Rogowski coil formed around the first through hole; and a power-supply-side terminal member that electrically connects the battery and the wiring pattern of the switching substrate. The control substrate is disposed at a prescribed interval from the switching substrate, and the power-supply-side terminal member is inserted into the first through hole.

Classes IPC  ?

• G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
• H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This wide gap semiconductor device has a wide gap semiconductor layer, and a metal electrode 20 provided in the wide gap semiconductor layer. The metal electrode 20 has a single crystal layer 21 in an interface region at the interface with the wide gap semiconductor layer. The single crystal layer 21 of the interface region contains a first region for which a lattice constant L1 of the C axis is smaller than L by 1.5-8%, where L is the lattice constant in the equilibrium state of the C axis of the metal constituting the metal electrode 20.

Classes IPC  ?

• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 29/47 - Electrodes à barrière de Schottky
• H01L 29/872 - Diodes Schottky
• H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes

Abrégé

An auxiliary member (2) having a higher absorption rate for laser light (LL) than do a plurality of joined members (1) that are joined to each other is positioned so as to face a boundary exposure surface (12) of the plurality of joined members, the boundary exposure surface being a surface at which a boundary (11) between the plurality of joined members is visible; the auxiliary member is irradiated with laser light and melted; the temperature of a boundary portion (13) of the plurality of joined members is raised by a molten portion (23) of the auxiliary member, and the boundary portion is caused to transition to a state where laser light is readily absorbed; and the boundary portion is irradiated with laser light and melted, whereby the plurality of joined members are welded.

Classes IPC  ?

• B23K 26/18 - Travail par rayon laser, p.ex. soudage, découpage ou perçage  utilisant des couches absorbantes sur la pièce à travailler, p.ex. afin de marquer ou de protéger
• B23K 26/21 - Assemblage par soudage

Abrégé

This electric current detection device detects an electric current flowing through an inverter unit which includes a first switching element and a second switching element connected in series and which generates an alternating-current signal. The electric current detection device comprises: a first Rogowski coil for detecting an electric current flowing through the first switching element; a second Rogowski coil for detecting an electric current flowing through the second switching element; and a detection processing unit which generates a composite signal by adding a first detection signal obtained by integrating an output of the first Rogowski coil and a second detection signal obtained by integrating an output of the second Rogowski coil, and detects an output electric current of the alternating-current signal on the basis of the composite signal.

Classes IPC  ?

• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
• G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
• G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
• H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This electronic device is provided with: a wiring board having wiring; at least one semiconductor chip having a first electrode and a second electrode on one surface thereof, and a third electrode on another surface thereof; and an electrically conductive planar connecting plate. The first electrode and the second electrode of the semiconductor chip are joined to the wiring board, the third electrode is joined to the connecting plate, and the connecting plate is connected to the wiring board. The wiring board, the semiconductor chip, and the connecting plate are arranged in this order.

Classes IPC  ?

• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
• H02M 7/155 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type thyratron ou thyristor exigeant des moyens d'extinction utilisant uniquement des dispositifs à semi-conducteurs

Abrégé

A control circuit 11 of the present invention controls the discharge of an X capacitor C100 connected between power supply lines AC1, AC2 of an AC-DC converter 51, the power supply lines being lines of alternating current of opposite polarities, and the AC-DC converter being a converter to which alternating current is inputted and which converts the alternating current into direct current and outputs the direct current. The control circuit 11 detects a change state of the voltage across the X capacitor C100 and controls the discharge so as to discharge the charge accumulated in the X capacitor C100 on the basis of the change state.　This control circuit 11 makes it possible to reliably discharge the charge accumulated in the X capacitor C100 even if the alternating-current input voltage fluctuates significantly.

Classes IPC  ?

• H02M 7/06 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge sans électrode de commande ou des dispositifs à semi-conducteurs sans éléctrode de commande

Abrégé

This control circuit comprises: a voltage output circuit control unit that, when a first control signal is at a first level, controls a voltage output circuit such that a voltage based on a second control signal is applied across both ends of an electrostatic transducer, and when the first control signal is at a second level, stops the voltage output circuit; a voltage clamp unit that outputs a clamp voltage obtained by clamping the voltage across both terminals of the electrostatic transducer to a first threshold voltage or lower; a control signal output unit that, when the clamp voltage is equal to or lower than a second threshold voltage, outputs the first control signal of the second level, and when the second control signal is higher than a third threshold voltage, outputs the first control signal of the first level; and a degradation detection unit that, when the clamp voltage did not reach a fourth threshold voltage or higher for a consecutive prescribed number of times, outputs a detection signal which indicates that the electrostatic transducer has degraded .

Classes IPC  ?

• H04R 3/00 - Circuits pour transducteurs
• H04R 29/00 - Dispositifs de contrôle; Dispositifs de tests
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This control circuit is provided with: a voltage output circuit control unit which controls a voltage output circuit so as to apply a voltage corresponding to a second control signal across an electrostatic transducer when a first control signal is at a first level, and so as to stop the voltage output circuit when the first control signal is at a second level; a voltage clamp unit which outputs a clamp voltage obtained by clamping a voltage across the terminals of the electrostatic transducer to a first threshold voltage or lower; and a control signal output unit which, when the clamp voltage is lower than or equal to a second threshold voltage, outputs the first control signal of the second level and which, when the second control signal is higher than a third threshold voltage, outputs the first control signal of the first level.

Classes IPC  ?

• H04R 3/00 - Circuits pour transducteurs
• H04R 29/00 - Dispositifs de contrôle; Dispositifs de tests
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This semiconductor device 1 is provided with: a substrate 10; a chip 20 on which a surface electrode 22 is formed; and a lead 30 having a first electrode connection portion 32 that is disposed above the surface electrode 22 and electrically connected to the surface electrode 22 on the chip 20 with a conductive bonding material 50 therebetween, a second electrode connection portion 34 that is connected to an electrode portion 15 of a wiring pattern 11, and a current conduction portion 36 that is connected to the first electrode connection portion 32 and the second electrode connection portion 34 and serves as a current conduction path between the first electrode connection portion 32 and the second electrode connection portion 34. The lead 30 further includes a thermal shrinkage stress equalizing structure 40 that is provided to a section, as seen in a planar view, among the outer periphery of the first electrode connection portion 32 where the current conduction portion 36 is not connected, and equalizes the thermal shrinkage stress applied to the conductive bonding material 50 provided between the first electrode connection portion 32 and the surface electrode 22.　The semiconductor device 1 has high reliability and makes it possible for the conductive bonding material to maintain a constant thickness.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

This semiconductor device 100 includes a circuit board 2, a metal frame 31, and a semiconductor element 1 that has a main electrode 11 on a surface facing the circuit board 2, with a conductive bonding material interposed between and electrically connecting the main electrode 11 and the metal frame 31. The main electrode 11 and a sub electrode 12 are formed on the metal frame 31 side of the semiconductor element 1. A metal plate 4 on which projecting portions 41 are formed at positions corresponding to the main electrode 11 is interposed between the metal frame 31 and the main electrode 11.　According to the present invention, the metal plate 4 on which projecting portions (41, 42) are formed at positions corresponding to the main electrode 11 is interposed between the metal frame 31 and the main electrode 11. Therefore, the thin metal plate 4 on which micro projecting portions are easily formed achieves a structure in which the conductive bonding material gathers and bonds around the locations of the projecting portions, thereby making it possible to form a thick layer of the conductive bonding material between the main electrode 11 and the metal frame 31, while also reducing the possibility of a short circuit between the main electrode 11 and the sub electrode 12 even if the metal frame 4 is thick.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

A semiconductor device 1 is characterized by comprising: an embedded substrate 2 on which a semiconductor chip 3 is mounted, said embedded substrate 2 having terminals that include an electrical pathway terminal 23 formed on the surface thereof; a lead frame 4 having a chip-connected electrode portion 41 that is electrically connected to the surface of the semiconductor chip 3 via a conductive bonding member 6, a substrate-connected electrode portion 42 that is electrically connected to the electrical pathway terminal 23 of the embedded substrate 2, and a horizontal support portion 43 that extends outward from the chip-connected electrode portion 41 or the substrate-connected electrode portion 42; and a pin terminal 5 that stands vertically upright with respect to the horizontal plane of the substrate-connected electrode portion 42 of the lead frame 4, wherein the horizontal support portion 43 extends further outward than the embedded substrate 2.　According to the present invention, it is possible to provide a semiconductor device having a pin terminal structure in which an external connection terminal has good tip-end pitch accuracy.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles

Abrégé

This semiconductor device 100 is characterized by comprising a circuit board 10, a semiconductor element 20 that has a main electrode 23, a metal frame 30, and a flat metal plate 40 that is interposed between the metal frame 30 and the main electrode 23, wherein: the metal plate 40 and conductive bonding materials 52, 53 constitute a stress-reducing structure that reduces the stress applied to the metal plate 40 and the conductive bonding materials 52, 53 between the metal frame 40 and the semiconductor element 20; and the stress-reducing structure has a structure in which the thickness of the metal plate 40 is thinner than the thickness of the metal frame 30, and at least one projecting portion 41 is formed on the metal plate 40 at a position corresponding to the main electrode 23.　With the semiconductor device 100, even if a relatively thick metal frame is used, it is possible to reduce the stress acting on the conductive bonding material between the semiconductor element and the metal frame.

Classes IPC  ?

• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

A semiconductor device 1 according to the present invention is provided with a plurality of external terminals T1-T4. This semiconductor device is characterized by being provided with: first lead parts 10a, 10b that have die pads 12a-12d, first outer leads 14a, 14b, and first inner leads 16a, 16b; chips ch1-ch4; second lead parts 20a, 20b that have second outer leads 22a, 22b and second inner leads 24a, 24b; and a resin 40, wherein a terminal temperature equalization structure that restricts the amount of heat to be conducted from the chips ch1-ch4 to predetermined external terminals T1, T4 and that equalizes the temperatures of the plurality of external terminals T1-T4 is formed in at least one of the first inner leads 16a, 16b, the second inner leads 24a, 24b, and the die pads 12a-12d. The semiconductor device 1 according to the present invention makes it possible to prevent the temperature of a specific external terminal from becoming significantly high at the time of mounting.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

This semiconductor device comprises: a circuit part that includes a semiconductor chip; a plurality of pin terminals that are formed in a rod-like shape extending in the same direction from the circuit part and that are electrically connected to the circuit part; a sealing resin part that seals the circuit part and first regions of the pin terminals located on the circuit part side; and a plurality of coating resin parts that are formed in a tubular shape, integrally extend from an outer face of the sealing resin part from which second regions of the plurality of pin terminals protrude, and coat the base end portions of the second regions of the pin terminals, the base end portions being located on the sealing resin part side.

Classes IPC  ?

• H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

This control circuit is provided with: a voltage output circuit control unit which, when a detection control signal is at a first level, controls a voltage output circuit such that voltage corresponding to an output control signal and designed to cause an electrostatic transducer to generate vibration, sound or pressure is applied between both ends of the electrostatic transducer, and when the detection control signal is at a second level, stops the voltage output circuit; a pulse signal output unit which outputs a pulse signal for causing the electrostatic transducer to detect the vibration, sound or pressure to a high potential side terminal of the electrostatic transducer via a diode; and a voltage clamp unit which outputs clamp voltage obtained by clamping voltage between terminals of the electrostatic transducer to a predetermined voltage or lower.

Classes IPC  ?

• H04R 3/00 - Circuits pour transducteurs
• H04R 19/02 - Haut-parleurs
• H04R 19/04 - Microphones

Abrégé

A control unit of this vehicle motor drive control device performs switching between control for turning off a high-side switch and PWM control, and switching between control for turning on a low-side switch and PWM control, in accordance with the phase of a motor. Further, the control unit performs PWM control on the low-side switch such that the high-side switch and the low-side switch are turned on and off complementarily, during PWM control of the high-side switch to control first to third half bridges such that the motor is energized by 120 degrees or energized by 180 degrees.

Classes IPC  ?

• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

A control unit of a vehicle ignition device, during a predetermined detection period, determines whether a spark plug is ignited normally or not, on the basis of a voltage comparison result obtained by comparing the value of a primary voltage detected by a detector and a predetermined threshold voltage, and/or a current comparison result obtained by comparing the value of a flowing current detected by the detector and a predetermined threshold current.

Classes IPC  ?

• F02P 17/12 - Test des caractéristiques de l'étincelle, de la tension ou du courant d'allumage

Abrégé

This regulator 100 is a two-system output regulator for outputting a first output voltage V1 from a first output terminal T1 and outputting a second output voltage V2, obtained by reducing the voltage from the first output voltage V1, from a second output terminal T2, wherein the regulator 100 is provided with: a switching element 10; a capacitor 20; a first output terminal T1 connected to the midpoint between the switching element 10 and the capacitor 20; a second output terminal T2 connected to the midpoint between the switching element 10 and the capacitor 20 via a voltage reduction unit 30; and a control unit 40 for controlling the first output voltage V1 so that the first output voltage V1 becomes equal to or lower than a first set voltage V3 set in advance and the difference between the first output voltage V1 and the second output voltage V2 becomes equal to or lower than a second set voltage V4 set in advance. According to this regulator 100, an increase in loss can be prevented even if the second output terminal experiences a ground fault or the second output voltage decreases.

Classes IPC  ?

• H05B 37/02 - Commande
• G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final

Abrégé

This resonator device is provided with: a coil having one end section connected to a first coil terminal and the other end section connected to a second coil terminal; a coil case for storing the coil on a lower surface thereof; a ferrite core disposed facing the coil; a control substrate provided with a first control terminal to which the first coil terminal is electrically connected and a second control terminal to which the second coil terminal is electrically connected; and an inner case which is disposed between a metal base plate and the coil case, and which has a wall part provided around the upper surface, stores and fixes the ferrite core in a region surrounded by the wall part of the upper surface of the inner case so that the ferrite core faces the coil, and has the control substrate disposed on the lower surface thereof.

Classes IPC  ?

• H02J 50/10 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif
• H01F 38/14 - Couplages inductifs

Abrégé

Provided is a resonator device used to wirelessly charge a battery which is mounted on an electric vehicle and is for driving the electric vehicle, the resonator device being a device that is for receiving power and mounted on the electric vehicle, or a device that is for transmitting power and installed on the ground. The resonator device comprises: a coil having one end section connected to a first coil terminal and the other end section connected to a second coil terminal; a coil case for storing the coil in a spiral shape in a storing groove, wherein the storing groove is formed so as to be wound around the central section of a lower surface of the coil case, a first terminal arrangement region for storing the first coil terminal is formed on one end section positioned at the most central section of the wound storing groove, and a second terminal arrangement region for storing the second coil terminal is formed on the other end section positioned on the outermost side of the wound storing groove; a ferrite core arranged so as to be adjacent to the lower surface of the coil case; and a control substrate provided with a first control terminal to which the first coil terminal is electrically connected and a second control terminal to which the second coil terminal is electrically connected.

Classes IPC  ?

• H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
• H01F 38/14 - Couplages inductifs

Abrégé

A power supply device for a vehicle is provided with: a main switch which is on/off controlled by a user, and which, when turned on, turns on a third switch and places first and second switches in such a state as to be able to be turned on, and, when turned off, turns off the third switch and places the first and second switches in such a state as to be not able to be turned on; a driver which has one end thereof connected to a driver terminal and the other end thereof connected to a ground terminal, wherein the driver either rectifies and controls AC power supplied from a motor and provides an output to a driver terminal, or drives the motor with a voltage supplied to the driver terminal; and a control circuit that controls operations of the driver, the first switch, and the second switch.

Classes IPC  ?

• F02N 11/08 - Circuits spécialement adaptés pour le démarrage des moteurs

Abrégé

This electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, and a second connection body 70 provided on one side of the second electronic element 23. The first electronic element 13 and the second electronic element 23 do not overlap in the planar direction.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

Provided is an electronic module comprising: an electronic element 210; a connector 250 that is to be provided on the front surface of the electronic element 210; and a detector 100 that includes a winding section 10 provided to be coiled around the connector 250; and a returning wire section 50 connected with the terminal end of the winding section 10 and returning from the terminal end toward the starting end.

Classes IPC  ?

• G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs

Abrégé

This electronic device comprises: a primary coil 10; a secondary coil 20 which is arranged so as to face the primary coil 10; a coil sealing part 50 which is composed of a sealing resin that seals the primary coil 10 and the secondary coil 20; a primary-side sealing part 150 which seals a primary-side electronic element 110 that is electrically connected to the primary coil 10; and a secondary-side sealing part 250 which seals a secondary-side electronic element 210 that is electrically connected to the secondary coil 20.

Classes IPC  ?

• H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
• H01F 27/28 - Bobines; Enroulements; Connexions conductrices
• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire

Abrégé

This electronic device comprises: a primary coil 10; a secondary coil 20 which is arranged so as to face the primary coil 10; a coil sealing part 50 which is composed of a sealing resin that seals the primary coil 10 and the secondary coil 20; a primary-side electronic element 110 which is electrically connected to the primary coil 10; and a secondary-side electronic element 210 which is electrically connected to the secondary coil 20. The primary-side electronic element 110 is provided on a primary-side extension part 60 that extends from the primary coil 10 to the outside of the coil sealing part 50; or alternatively, the secondary-side electronic element 210 is provided on a secondary-side extension part 70 that extends from the secondary coil 20 to the outside of the coil sealing part 50.

Classes IPC  ?

• H01F 27/28 - Bobines; Enroulements; Connexions conductrices
• H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire

Abrégé

This electronic device comprises: a primary coil 10; a secondary coil 20 which is arranged so as to face the primary coil 10; a primary-side electronic element 110 which is electrically connected to the primary coil 10; and a secondary-side electronic element 210 which is electrically connected to the secondary coil 20. The primary coil 10 has: a primary-side first coil 10a which is provided on the other side of the secondary coil 20; and a primary-side second coil 10b which is provided on one side of the primary-side first coil 10a. A connection part 19 which connects the primary-side first coil 10a and the primary-side second coil 10b to each other is provided so as to pass through the space in the secondary coil 20.

Classes IPC  ?

• H01F 30/10 - Transformateurs monophasés
• H01F 27/28 - Bobines; Enroulements; Connexions conductrices

Abrégé

This magnetic component comprises: a primary coil 10; a secondary coil 20 which is arranged so as to face the primary coil 10; a core 500 which passes through the primary coil 10 and the secondary coil 20; and a coil sealing part 50 which seals at least the primary coil 10, the secondary coil 20, and a part or the whole of the region between the core 500 and the primary coil 10 and the secondary coil 20.

Classes IPC  ?

• H01F 30/10 - Transformateurs monophasés
• H01F 27/28 - Bobines; Enroulements; Connexions conductrices
• H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments

Abrégé

This semiconductor device manufacturing method comprises: a step for either charging a glass material into a metal container 100 containing a first metal and a second metal, or charging a glass material and a second metal into a metal container 100 containing a first metal; a step for forming a metal-containing glass composition 100 containing the first metal or the second metal by melting the glass material in the metal container 100 at a first heating temperature for a first period of time; and a step for providing the metal-containing glass composition to a semiconductor layer.

Classes IPC  ?

• H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p.ex. pour produire des défectuosités internes
• H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
• H01L 29/861 - Diodes
• H01L 29/868 - Diodes PIN

Abrégé

A semiconductor module that is for converting direct current to three-phase alternating current and supplying the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein a first ground terminal GND1, a second ground terminal GND2, and a third ground terminal GND3 are provided in a line at intervals along a second side B2 and are electrically insulated from each other.

Classes IPC  ?

• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

A semiconductor module that is for converting direct current to three-phase alternating current and supplying the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein first through third control signal terminals Q1G, Q2G, Q3G are arranged in a line along the extension direction of a first side B1 of a substrate B such that one end of each is close to the first side B1, and fourth through sixth control signal terminals Q4, Q5, Q6 are arranged in a line along the extension direction of a second side B2 of the substrate B such that one end of each is close to the second side B2.

Classes IPC  ?

• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

A semiconductor module that is for converting direct current to three-phase alternating current and supplying the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein a first gap M1 across which side surfaces of first center wiring and second center wiring face in proximity to each other and a second gap M2 across which side surfaces of the second center wiring and third center wiring face in proximity to each other curve at an upper surface of a substrate.

Classes IPC  ?

• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

[Problem] To provide an inverter circuit with which it is possible to improve efficiency and stabilize operation by switching operation between normal control and regenerative control so that, even when output frequency is low, normal control is performed when output voltage increases and regenerative control is performed when output voltage decreases. [Solution] An inverter circuit comprising a control unit which, when an error value is more than or equal to a first threshold value, causes the primary-side switch to operate in a state in which a secondary-side switch is turned off, thereby implementing capacitive load normal control. On the other hand, when the error value is less than the first threshold value, the control unit causes the secondary-side switch to operate in a state in which the primary-side switch is turned off, thereby implementing regenerative control with respect to a DC power supply.

Classes IPC  ?

• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This semiconductor module is provided with a die pad frame (DF), a semiconductor chip (CX), a conductive connection member (A2) for a die pad, a first clip frame (CF1), a conductive connection member (A1) for a first clip, and a sealing resin (H). A clip engagement section (DY) is provided to the end of the upper surface (CF1E) of the first clip frame and is positioned partially above the upper surface of the first clip frame so as to be separated from the upper surface of the semiconductor chip. A groove (DM) is formed in the lower surface of the clip engagement section.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements

Abrégé

This semiconductor module is provided with a die pad frame (DF), a semiconductor chip (CX), a conductive connection member (A2) for a die pad, and a sealing resin (H). The die pad frame has a protruding section (T) that is provided to the upper side of an end (Ba) of the body (B) of the die pad frame, that extends from the upper surface of the body of the die pad frame in a direction parallel to the upper surface of the body of the die pad frame, and that is for improving adhesion with the sealing resin. An anchoring section (U) positioned partially above the upper surface of the protruding section is provided to the tip of the protruding section.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

This semiconductor device includes: a semiconductor substrate; a first conductivity type drift layer; a second conductivity type well region; a second conductivity type high concentration region; a first conductivity type source region; an insulating film formed on the drift layer; a first contact metal film that contacts the source region and the high concentration region through a first opening formed on the insulating film; a second contact metal film that is formed on a surface of the first contact metal film and contacts the high concentration region through a second opening formed on the first contact metal film; and a source electrode film that is formed on a surface of a contact metal layer that includes the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués

Abrégé

This power conversion device is provided with: a chassis having a bottom plate and a side wall extending upward from an upper surface edge portion of the bottom plate; a first substrate disposed on the upper surface of the bottom plate; a thermosetting first encapsulating resin for encapsulating the upper surface of the first substrate; and a partition member disposed on the upper surface of the bottom plate between at least a part of the side wall and a side surface of the first substrate or on the first substrate and partitioning between at least the part of the side wall and the first encapsulating resin on the first substrate.

Classes IPC  ?

• H02M 7/12 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
• H05K 5/00 - Enveloppes, coffrets ou tiroirs pour appareils électriques

Abrégé

This semiconductor device includes: a semiconductor substrate that comprises silicon carbide; a first conductivity type drift layer formed on one major surface of the semiconductor substrate; a second conductivity type well region formed on the drift layer; a first conductivity type source region formed on the well region; an insulating film formed on the drift layer; a contact metal film that is formed on the insulating film and contacts both the source region and the well region through an opening formed on the insulating film; and a source electrode film formed so as to contact the contact metal film. The contact metal film may include titanium nitride.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués

Abrégé

This drive device of an embodiment is provided with: a signal receiving unit 11 for receiving sensor signals output from angle sensors 4u, 4v, 4w; a signal interval calculation unit 12 for calculating a signal interval ΔT between a sensor signal S1 and a sensor signal S2; an output angle calculation unit 13 for calculating an output angle of a PWM signal on the basis of the rotational speed and target torque of a motor 3; an attachment error acquiring unit 14 for acquiring the errors AS_u, AS_v, AS_w of the attachment positions of the respective angle sensors; a timing determination unit 15 for determining the output timing time to of the PWM signal on the basis of the signal interval ΔT, the output angle, and the errors AS_u, AS_v, AS_w; and a motor control unit 16 for outputting the PWM signal when the output timing time to has elapsed after receiving a sensor signal S3.

Classes IPC  ?

• H02P 6/17 - Dispositions de circuits pour détecter la position et pour l’obtention d’informations sur la vitesse
• G01D 5/12 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques
• G01D 5/244 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions
• G01P 21/02 - Essai ou étalonnage d'appareils ou de dispositifs couverts par les autres groupes de la présente sous-classe de tachymètres
• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

This drive device is provided with a control unit for controlling the drive of a motor by controlling first to sixth switches. The control unit periodically sets continuous first to sixth energization periods, each of which corresponds to an electrical angle of 60º, in accordance with first to sixth detection periods. The control unit PWM-controls the first to sixth switches so as to switch between 120º-energization for flowing phase current during continuous two energization periods among the first to sixth energization periods and 180º-energization for flowing phase current during continuous three energization periods among the first to sixth energization periods. The control unit sets an energization period during switching among the first to sixth energization periods such that the energization period is shifted by a period in accordance with the arrangement angle of an angle sensor with respect to a detection period during switching among the first to sixth detection periods.

Classes IPC  ?

• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

An electric vehicle control device 1 according to an embodiment is provided with: a signal receiving unit 11 for receiving a signal coming at intervals in accordance with the rotational speed of a motor 3; a signal interval variation calculation unit 12 for calculating a signal interval variation that is the difference between a first signal interval ΔT1 and a second signal interval ΔT2; a signal interval correction unit 13 for correcting the first signal interval ΔT1 on the basis of the signal interval variation; a rotational speed calculation unit 14 for calculating an instantaneous rotational speed of the motor 3 on the basis of the corrected first signal interval ΔTa; and a motor control unit 15 for controlling the motor 3 on the basis of the calculated instantaneous rotational speed.

Classes IPC  ?

• H02P 6/17 - Dispositions de circuits pour détecter la position et pour l’obtention d’informations sur la vitesse
• G01P 21/02 - Essai ou étalonnage d'appareils ou de dispositifs couverts par les autres groupes de la présente sous-classe de tachymètres

Abrégé

An electric vehicle control device 1 is provided with: a signal receiving unit 11 for receiving a signal coming at intervals in accordance with the rotational speed of a motor 3; a rotational speed calculation unit 12 for calculating an instantaneous rotational speed of the motor 3 on the basis of the signal interval ΔT between a sensor signal S1 and a sensor signal S2; and a motor control unit 13 for generating a PWM signal on the basis of the calculated instantaneous rotational speed. When the variation of the instantaneous rotational speed is greater than or equal to a specific value, the motor control unit 13 corrects the duty ratio of the PWM signal on the basis of the instantaneous rotational speed so that the output voltage of a power conversion unit 30 becomes a value in accordance with the instantaneous rotational speed.

Classes IPC  ?

• H02P 6/17 - Dispositions de circuits pour détecter la position et pour l’obtention d’informations sur la vitesse
• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

This drive device is provided with a control unit for controlling the drive of a motor by controlling first to sixth switches. In a first case where a detected speed by a rotational speed detection unit is slower than a preset first reference speed and a set duty ratio which is set on the basis of the detected speed and a user manipulated variable for controlling the rotation of the motor is greater than or equal to a preset first reference duty ratio, the control unit performs: control for switching the on/off of the first switch by using a first phase high-side PWM signal having the set duty ratio while turning off the second switch; control for switching the on/off of the third switch by using a second phase high-side PWM signal having the set duty ratio while turning off the fourth switch; and control for switching the on/off of the fifth switch by using a third phase high-side PWM signal having the set duty ratio while turning off the sixth switch.

Classes IPC  ?

• H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs

Abrégé

A control unit performs drive control of a motor by using a trapezoidal-shaped energization waveform, wherein said drive control includes: control for switching the on/off of a first switch by using a first phase high-side PWM signal having an adjusted duty ratio which is adjusted so as to increase in stages up to a preset set duty ratio, maintain the set duty ratio after increasing, and decrease in stages from the set duty ratio after maintaining; control for switching the on/off of a third switch by using a second phase high-side PWM signal having the adjusted duty ratio; and control for switching the on/off of a fifth switch by using a third phase high-side PWM signal having the adjusted duty ratio. Increasing in stages up to the set duty ratio and decreasing in stages from the set duty ratio are performed in a set period which is set longer than the pulse periods of the first phase high-side PWM signal, the second phase high-side PWM signal, and the third phase high-side PWM signal.

Classes IPC  ?

• H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions

Abrégé

A main control circuit of this drive device detects the first charged voltage of a smoothing capacitor before the start of discharging through a discharging resistor. Before a preset set time elapses from the start of discharging through the discharging resistor, the main control circuit calculates, by multiplying the first charged voltage by a preset factor, a discharging continuable voltage that is the charged voltage of the smoothing capacitor estimated during the elapse of the set time and capable of being continuously discharged through the discharging resistor. The main control circuit detects the second charged voltage of the smoothing capacitor during the elapse of the set time and compares the second charged voltage with the discharging continuable voltage. When the second charged voltage is less than or equal to the discharging continuable voltage, the main control circuit controls a discharging control circuit so as to continue discharging through the discharging resistor. Meanwhile, when the second charged voltage is greater than the discharging continuable voltage, the main control circuit controls the discharging control circuit so as to stop discharging through the discharging resistor.

Classes IPC  ?

• H02P 29/00 - Dispositions pour la régulation ou la commande des moteurs électriques, adaptées à des moteurs à courant alternatif et à courant continu

Abrégé

A wide gap semiconductor device according to the present invention comprises: a first MOSFET region (M0) which comprises a first gate electrode 10 and a first source region 30 that is provided in a first well region 20 of a second conductivity type; a second MOSFET region (M1) which is provided below a gate pad 100 and comprises a second gate electrode 110 and a second source region 130 that is provided in a second well region 120 of the second conductivity type; and a built-in diode region which is electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/8234 - Technologie MIS
• H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée

Abrégé

A power supply device having a plurality of stages of converters, wherein an equilibrium is achieved with regard to the voltage/power stress of the various converters, thereby reducing loss and improving the power conversion efficiency for the converters. The power supply device comprises: a plurality of stages of converters 40-1, ... for converting a DC input voltage to a DC output voltage by means of a switching operation based on a plurality of switching drive signals; and a control unit 50 for controlling the switching operation of the converters 40-1, .... The control unit 50 has: an error amplifier 51 for determining an error between the DC output voltage and a reference voltage Vth; a modulator 52 for generating a common feedback signal by carrying out modulation for reducing the error; and a plurality of drive circuits 53-1, ... for generating the plurality of switching drive signals on the basis of the feedback signal.

Classes IPC  ?

• H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs

Abrégé

An electronic module according to the present invention comprises: a substrate; a first conductor layer which extends in a first direction on the upper surface of the substrate; a second conductor layer which is connected with the first conductor layer and extends in a second direction that is different from the first direction so as to sandwich the first conductor layer; an electronic element which is provided on the substrate in a position that is different from the positions of the first conductor layer and the second conductor layer; and a terminal which is provided on the first conductor layer. The first conductor layer is connected to the electronic element at a position that is separate from the terminal in the first direction so as to serve as a current path for the current that flows between the electronic element and the terminal.

Classes IPC  ?

• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles

Abrégé

A magnetic component according to the present invention comprises: a first coil 10; a first insulation part 60 which is provided on one side of the first coil 10; a second coil 20 which is provided on one side of the first insulation part 60; a second insulation part 70 which is provided on one side of the second coil 20; a core 100 which has a leg part 120 that passes through the center parts of the first coil 10 and the second coil 20, while having a main body part 110 that is provided on one side of the second insulation part 70; a third insulation part 80 which is provided on one side of the main body part 110 of the core 100; and a heat dissipation body 200 which is provided on one side of the third insulation part 80. The second insulation part 70 is composed of a heat dissipating insulation part. The heat dissipation body 200 comprises an elastic press part 210 for pressing the second insulation part 70 against the second coil 20.

Classes IPC  ?

• H01F 27/28 - Bobines; Enroulements; Connexions conductrices
• H01F 30/10 - Transformateurs monophasés
• H01F 37/00 - Inductances fixes non couvertes par le groupe
• H01F 41/12 - Isolement d'enroulements

Abrégé

A power supply device according to the present invention comprises: a case; a substrate which is affixed to the case; an electrode which is provided on the substrate; an electronic component which is affixed to the case; a terminal which is connected to the electronic component; and a conductive relay element which has a first region that is connected to the electrode and a second region that is connected to the terminal. The relay element is elastic, or alternatively, is provided with: a through hole into which the electrode or the terminal is inserted; or a projection which is inserted into the electrode or the terminal.

Classes IPC  ?

• H01R 11/01 - CONNEXIONS CONDUCTRICES DE L'ÉLECTRICITÉ; ASSOCIATION STRUCTURELLE DE PLUSIEURS ÉLÉMENTS DE CONNEXION ÉLECTRIQUE ISOLÉS LES UNS DES AUTRES; DISPOSITIFS DE COUPLAGE; COLLECTEURS DE COURANT Éléments de connexion individuels assurant plusieurs emplacements de connexion espacés pour des organes conducteurs qui sont ou qui peuvent être interconnectés de cette façon, p.ex. pièces d'extrémité pour fils ou câbles supportées par le fil ou par caractérisés par la forme ou par la disposition de l'interconnexion entre leurs emplacements de connexion
• H01R 12/55 - Connexions fixes pour circuits imprimés rigides ou structures similaires caractérisées par les bornes
• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire

Abrégé

The invention comprises: a casing; a pressure-receiving member provided above the casing and having a base plate on the surface facing the casing; a plurality of elastic bodies, each extending in a direction away from the pressure-receiving member and having one end section coupled to the pressure-receiving member; anchoring members, each anchoring the corresponding elastic body onto the casing at a different position from the position where the pressure-receiving member is provided; and a thermal dissipation member provided between the casing and the back surface of the base plate.

Classes IPC  ?

• H05K 7/12 - Moyens élastiques ou moyens de serrage pour fixer un composant à la structure de l'ensemble
• H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage

Abrégé

A semiconductor switch control circuit 12 according to the present invention comprises: a pulse signal generator 13 that generates a pulse signal serving as a time reference for performance of on/off control of a semiconductor switch 6; a drive current generator 14 that, on the basis of the pulse signal generated by the pulse signal generator 13, generates a drive current and supplies said drive current to a gate electrode of the semiconductor switch 6; a current detector 18 that detects a drain current, a source current and the like of the semiconductor switch 6; and a drive current controller 19 that has a function for controlling the drive current generated by the drive current generator 14 on the basis of the pulse signal generated by the pulse signal generator 13 and the current detected by the current detector 18. Even at a timing at which a large switching current flows, such as if a power supply starts or overloads, this semiconductor switch control circuit is less susceptible to the occurrence of self-induced oscillation and resulting malfunctioning of the semiconductor switch, which would damage the semiconductor switch and circuit components proximal thereto.

Classes IPC  ?

• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
• H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
• H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites

Abrégé

Provided is a control device 50 for a DC/DC converter 1 with which it is possible to cover a wide range of obtainable output power with low loss. The control device 50 has a count value calculation unit 51, a comparator unit 52, a frequency control unit 53, a phase shift control unit 54, and a pulse drive unit 55. When rapidly charging a battery, for example, a DC output current Io is supplied to the battery by frequency control performed by the frequency control unit 53. Upon entering a power supply range less than or equal to the boundary of a current resonance control limit that serves as a reference value and is difficult to control, phase shift control performed by the phase shift control unit 54 is selected and the DC output current Io is supplied to the battery.

Classes IPC  ?

• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire

Abrégé

A semiconductor device 1 equipped with a semiconductor chip 3 and a lead 4 which includes an electrode-connecting part 41 which is electrically connected to the semiconductor chip 3 by solder 6, and projecting parts 42 which project peripherally outward from the electrode-connecting part 41, the semiconductor device being characterized in that the surfaces of the projecting parts 42 of the lead 4 on the semiconductor chip 3 side thereof each have a solder material flow prevention groove-forming region R2 which transects the lead 42 in the widthwise direction W from one end to the other end thereof. This semiconductor device makes it possible to prevent solder material from flowing to an undesirable location on the lead during production, even when the solder between the semiconductor chip and the lead is thickly formed.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• B23K 1/00 - Brasage ou débrasage
• B23K 1/20 - Traitement préalable des pièces ou des surfaces destinées à être brasées, p.ex. en vue d'un revêtement galvanique
• H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

This method for producing a semiconductor device involves: a semiconductor chip placement step S3 for placing a semiconductor chip 3 on a base 11; a solder material placement step S4 for placing a solder material 6 on the top surface of the semiconductor chip 3; a lead frame placement step S7 for positioning a lead frame 9 on spacers 12 which project from the base 11 in a manner such that the upper ends thereof reach a higher height than does the top surface of the semiconductor chip 3; a weight positioning step S8 for positioning a weight 22, which includes sections which face the spacers 12, on the lead frame 9; and a soldering step S10 for soldering the semiconductor chip 3 and the lead frame 9 to one another by heating the solder material 6. This method for producing a semiconductor device makes it possible to reduce the risk of damaging the semiconductor chip, and to solder the semiconductor chip and the lead to one another while maintaining a desired thickness of solder material therebetween.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• B23K 1/00 - Brasage ou débrasage
• H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

This semiconductor device 1 is equipped with: a substrate 10 having a semiconductor chip-positioning surface 12; a semiconductor chip 20 which is positioned on the semiconductor chip-positioning surface 12, and has an electrode 24 formed on the surface thereof opposite the substrate-side surface; and a lead 30 which has an electrode-connecting part 32 which is joined to the electrode 24 by solder 40. The semiconductor device 1 is characterized in that the electrode-connecting part 32 has: a projection 36 which projects toward the semiconductor chip 20 side in the region where said part is joined by the solder 40; and a through-hole 38 which is formed in the peak 37 of the projection 36, and passes from the surface thereof on the semiconductor chip 20 side to the surface opposite the semiconductor chip 20 side. As a result, the present invention is capable of providing a semiconductor device which is unlikely to exhibit a decline in reliability.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré

Abrégé

This resin-sealed semiconductor device 1 is obtained by resin-sealing: a semiconductor chip 20 having a plate-shaped electrode E which is formed on one surface thereof and is divided into a plurality of regions by one or more grooves S1, S2, S3; and a plate-shaped electrode-connecting piece 31E which is connected to the plate-shaped electrode E so as to cover the plurality of regions. Furthermore, through-holes h11, h12, h13 which pass through the electrode-connecting piece 31E in the thickness direction are formed in the electrode-connecting piece 31E at locations facing the grooves S1, S2, S3. The present invention makes it possible to provide a high-quality resin-sealed semiconductor device in which there are no voids inside the resin-sealed body near the grooves.

Classes IPC  ?

• H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes

Abrégé

A semiconductor device 1 equipped with: a substrate 10 having a semiconductor chip-positioning surface 12; a semiconductor chip 20 which is positioned on the semiconductor chip-positioning surface 12, and has a principal electrode 24 formed on the surface thereof opposite the surface facing the semiconductor chip-positioning surface 12, and also has a control electrode 26 formed in a location separated from the principal electrode 24; and a lead 30 which has an electrode-connecting piece 32, at least part of which is joined to the principal electrode 24 by solder 40. The semiconductor device 1 is characterized in that the electrode-connecting piece 32 has a projection 38 which projects toward the semiconductor chip 20 in a location which, when seen from a planar view, is between a gate electrode 26 and the edge 37 of the electrode-connecting piece 32 on the gate electrode 26 side of the joining surface 37 to the solder 40, or contacts the edge 37 of the electrode-connecting piece 32 on the gate electrode 26 side of the joining surface 36 to the solder 40. The present invention makes it possible to provide a semiconductor device 1 which is unlikely to exhibit a decline in reliability.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• B23K 1/00 - Brasage ou débrasage
• H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

This resin-sealed semiconductor device 1 is equipped with: a semiconductor chip 10; leads 20A, 30A which are electrically connected to the semiconductor chip 10 and have a plurality of electrode-connecting sections 22, 24, 32, 34, including solder-joined electrode-connecting sections 22, 32 which are joined to electrodes 12, 66 by solder 70, 74; and a resin 50 for sealing the semiconductor chip 10 and the leads 20A, 30A. Therein, grooves 26, 36 are formed between the solder-joined electrode-connecting sections 22, 32 and the electrode-connecting sections 24, 34. This resin-sealed semiconductor device 1 is capable of suppressing the concentration in or near the solder 70, 74 of stress (specifically, thermal stress) produced near the electrodes, and as a result, is capable of suppressing a decline in reliability and suppressing cracks in the solder 70, 74 and damage to the solder 70, 74 joints.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

This vehicular LED lighting control circuit is provided with a switch circuit for switching between a first state, in which electrical continuity is established between a switching node and a first contact connected to an intermediate node, and a second state, in which electrical continuity is established between the switching node and a second contact connected to the other end of an auxiliary adjustment resistor. According to a vehicular LED lighting control device, when voltage controlled to be a constant voltage is supplied, it is possible to stabilize an LED current even if the number of stages of LED elements that are turned on among LED elements connected in series is changed.

Classes IPC  ?

• B60Q 1/04 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs étant principalement destinés à éclairer la route en avant du véhicule ou d'autres zones de la route ou des environs les dispositifs étant des phares
• B60Q 1/26 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules
• B60Q 11/00 - Agencement des dispositifs témoin pour les dispositifs prévus dans les groupes
• B62J 6/00 - Agencements des dispositifs de signalisation optique ou d'éclairage sur les cycles; Leur montage ou leur support; Circuits à cet effet
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H05B 37/02 - Commande

Abrégé

This vehicular LED lighting control device is provided with: a short-circuit current limiting circuit which, between a first LED terminal and one end of a capacitor, is connected in series to an overcurrent limiting circuit and a detection resistor of a current detection circuit, and which increases in resistance and limits the current that flows between the first LED terminal and the one end of the capacitor when a short circuit detection circuit detects a short circuit between the first LED terminal and a second LED terminal; and a voltage detection circuit which detects the potential difference between the first LED terminal and the one end of the capacitor and which controls a power supply switch to forcibly turn off the power supply switch when the potential difference reaches a preset value.

Classes IPC  ?

• H05B 37/02 - Commande
• B60Q 1/04 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs étant principalement destinés à éclairer la route en avant du véhicule ou d'autres zones de la route ou des environs les dispositifs étant des phares
• B62J 6/00 - Agencements des dispositifs de signalisation optique ou d'éclairage sur les cycles; Leur montage ou leur support; Circuits à cet effet

Abrégé

This vehicular LED lighting control circuit is provided with: a first adjustment resistor having one end connected to the cathode-side of an LED lamp; a second adjustment resistor having one end connected to the other end of the first adjustment resistor and having the other end connected to a second wire; an adjustment bipolar transistor having one end connected to the one end of the first adjustment resistor and having the other end connected to the other end of the first adjustment resistor; a limiting transistor having one end connected to the anode-side of the LED lamp and having the other end connected to a control terminal of the adjustment bipolar transistor; and a reference voltage generation circuit having one end connected to the control terminal of the adjustment bipolar transistor and having the other end connected to the other end of the second adjustment resistor, the reference voltage generation circuit applying a reference voltage between the control terminal of the adjustment bipolar transistor and the other end of the second adjustment resistor.

Classes IPC  ?

• H05B 37/02 - Commande

Abrégé

This vehicular LED lighting control device is provided with: an LED thyristor having a cathode connected to an electric generator terminal; an LED capacitor having one end connected to an anode of the LED thyristor and having the other end connected to a ground terminal; an LED lamp having a cathode connected to one end of the LED capacitor; an LED resistor having one end connected to an anode of the LED lamp and having the other end connected to the other end of the LED capacitor; a voltage detection circuit for detecting an electric generator terminal voltage of the electric generator terminal; and an LED control circuit for controlling the LED thyristor on the basis of the electric generator terminal voltage detected by the voltage detection circuit and a capacitor voltage at the one end of the LED capacitor.

Classes IPC  ?

• H05B 37/02 - Commande
• B60Q 1/04 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs étant principalement destinés à éclairer la route en avant du véhicule ou d'autres zones de la route ou des environs les dispositifs étant des phares

Abrégé

The purpose of the present invention is to provide a power module configuration for suppressing the occurrence of noise. The outer peripheral surface of a power module in which mounted electric components are packaged is provided with external electrodes electrically connected to the electric components. In comparison with the case of two-dimensional mounting inside the power module, this structure not only makes it possible for the electric components to be mounted three-dimensionally, thereby shortening the wiring, but also allows the electric components electrically connected to the external electrodes of the electric components to form a switching circuit. A protection circuit and other circuits are mounted at the external electrodes and an electronic circuit mounting region within the module is eliminated, thereby reducing a parasitic inductance and a parasitic capacitance. It is also possible to select elements for a snubber circuit while measuring noise generated when the power module is mounted, so that the degree of freedom of a design is improved and the effect of suppressing noise, that is, surge voltage and high-frequency ringing is improved.

Classes IPC  ?

• H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation

Abrégé

This semiconductor device production method comprises: an assembled body forming step of disposing, between an electrode 24 and an electrode connection piece 32, a soldering material 44 having a structure including, layered therein, a first soldering material layer 41 containing a flux and disposed on the surface of the electrode 24, a second soldering material layer 42 containing a flux and disposed on the surface of the electrode connection piece 32, and a third soldering material layer 43 containing no flux and disposed between the first soldering material layer 41 and the second soldering material layer 42, to form an assembled body 50 wherein the substrate 10, the semiconductor chip 20, and the lead 30 are disposed in such a manner that the electrode 24 and the electrode connection piece 32 face one another across the soldering material 44; and a joining step of joining the electrode 24 to the electrode connection piece 32 via a solder 40. This semiconductor device production method can produce a semiconductor device whereof the reliability does not readily decline and can prevent the joining step from becoming complex.

Classes IPC  ?

• H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
• B23K 1/00 - Brasage ou débrasage
• H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

Provided is a semiconductor device provided with a drift layer of a first conductive type formed of silicon carbide, a junction area formed on one principal surface of the drift layer, a junction terminal-extension area containing impurities of a second conductive type, and a guard ring area containing impurities of the second conductive type having a higher concentration than in the junction terminal-extension area. In the junction terminal-extension area, the concentration of the impurities of the second conductive type increases as the depth from the one principal surface increases until the depth reaches a first depth. The concentration of the impurities of the second conductive type at the one principal surface is lower than or equal to one-tenths of the concentration of the impurities of the second conductive type at the first depth and is higher than the concentration of the impurities of the first conductive type in the drift layer.

Classes IPC  ?

• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices

Abrégé

A drive control system, provided with: a motor; a sensor that includes detection magnets provided along the rotation direction on the outer periphery of a rotor of the motor, the detection magnets being configured by alternately disposing a plurality of magnetic poles having a first polarity and a plurality of magnetic poles having a second polarity along the rotation direction of the motor, and also includes a Hall element provided to a stator of the motor at a position facing the outer periphery of the rotor, the Hall element outputting a pulse signal of a first level upon detecting magnetic flux of a magnet having a first polarity and outputting a pulse signal of a second level upon detecting a pulse signal of a second level upon detecting magnetic flux of a magnetic pole having a second polarity; a driver circuit for controlling the operation of the motor; and a control unit for detecting the phase of the motor on the basis of the pulse signal outputted by the Hall element of the sensor, and controlling the driver circuit and driving the motor.

Classes IPC  ?

• H02P 6/16 - Dispositions de circuits pour détecter la position
• G01D 5/245 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions utilisant un nombre variable d'impulsions dans un train

Abrégé

This method for producing a semiconductor device comprises: a dissolving step wherein aluminum lactate is dissolved in water, thereby preparing an aqueous solution; a mixing step wherein a mixed liquid is prepared by mixing the aqueous solution and an organic solvent with each other, and a semiconductor impurity liquid source that contains the mixed liquid is prepared; a coating step wherein the semiconductor impurity liquid source that contains the aqueous solution is applied onto a semiconductor substrate after the mixing step, thereby forming a diffusion source coating film on the semiconductor substrate; a firing step wherein the semiconductor substrate is subjected to a heat treatment at a first temperature in a first atmosphere after the coating step, thereby firing at least the organic solvent in the diffusion source coating film; and a diffusing step wherein the semiconductor substrate is subjected to a heat treatment at a second temperature that is higher than the first temperature in a second atmosphere after the firing step, thereby having the aluminum, which is contained in the diffusion source coating film, diffused into the semiconductor substrate so as to form a diffusion layer in the semiconductor substrate.

Classes IPC  ?

• H01L 21/225 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p.ex. une couche d'oxyde dopée

Abrégé

A semiconductor impurity liquid source includes: a compound that contains an impurity; an organic solvent that dissolves the compound; a thickening agent that is dissolved in the organic solvent and imparts viscosity to the liquid source; and an inorganic powder with a diameter larger than the impurity. The thickening agent adjusts the distribution of the impurity on an application surface of a semiconductor substrate by adjusting the gap between adjacent inorganic powder particles using viscosity when the liquid source is applied to the application surface, and maintains the distribution of the impurity by precipitating between adjacent inorganic powder particles as a result of being heated to a first temperature. The inorganic powder adjusts the distribution of gaps between semiconductor substrates, and when the joined semiconductor substrates are exposed to delamination liquid after heating the impurity to a second temperature, the delamination liquid permeates the space between the semiconductor substrates by the gap between the semiconductor substrates being maintained.

Classes IPC  ?

• H01L 21/225 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p.ex. une couche d'oxyde dopée

Abrégé

This electronic module is provided with a power supply wire which is provided along a first side on a substrate and which is connected to a power supply terminal, a ground wire which is provided along a second side on the substrate and which is connected to a ground terminal, and a first through a third half bridge which are configured with a high-side switch and a low-side switch connected in series between the power supply wire and the ground wire, and which are connected at the connection point of the high-side switch and the low-side switch to a first through a third motor terminal, respectively, and are connected in parallel to each other, wherein the first motor terminal, the second motor terminal and the third motor terminal are arranged between the power supply terminal and the ground terminal.

Classes IPC  ?

• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

In a disconnection state in which the positive electrode of a first battery and a power supply terminal are disconnected from each other and a motor stop state, a main control circuit of this electric vehicle control device discharges a smoothing capacitor in such a way that: when an output circuit is normal, the output circuit is operated with a non-driving pattern which is different from a driving pattern for rotating the motor and does not rotate the motor; and when the output circuit fails, a discharge control circuit is operated.

Classes IPC  ?

• B60L 3/00 - Dispositifs électriques de sécurité sur véhicules propulsés électriquement; Contrôle des paramètres de fonctionnement, p.ex. de la vitesse, de la décélération ou de la consommation d’énergie
• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This electronic module is provided with a shunt resistance which is connected at one terminal to one end of a first ground wire and at the other terminal to the other end of a second ground wire. Multiple signal terminals include a first current detection terminal which is arranged near the shunt resistance and which is electrically connected to the one terminal of the shunt resistance, and a second current detection terminal which is arranged near the shunt resistance and which is electrically connected to the other terminal of the shunt resistance. The shunt resistance is arranged near a first side of a substrate on which the multiple signal terminals are arranged.

Classes IPC  ?

• H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

This drive device is provided with: a first gate driver circuit, which outputs, to a control terminal of a first transistor, a first control signal generated on the basis of a first positive power supply voltage of first positive power supply wiring, and a first negative power supply voltage of first negative power supply wiring, and which controls operations of the first transistor; a second gate driver circuit, which outputs, to a control terminal of a second transistor, a second control signal generated on the basis of a second positive power supply voltage of second positive power supply wiring, and a second negative power supply voltage of second negative power supply wiring, and which controls operations of the second transistor so that the first transistor and the second transistor complementarily turn on/off; and a first charge pump circuit, which generates, on the basis of the first control signal, the first negative power supply voltage having a polarity opposite to that of the first positive power supply voltage by having the potential of the output terminal as reference, and which applies the first negative power supply voltage to the first negative power supply wiring.

Classes IPC  ?

• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques

Abrégé

This vehicular lighting control device controls the lighting of a plurality of LED units aboard a car equipped with an electronic machine, and comprises: a plurality of converters, each connected to a power source and transforming a power source voltage supplied from the power source; output circuits, each connected to an output from the corresponding converter and delivering a driving signal to the corresponding LED unit at the transformed voltage from the converter; a processor generating a plurality of switching signals, delivering each of the generated switching signals to the corresponding converter, at least either of the rise-timing or the fall-timing being different among the plurality of switching signals delivered by the plurality of converters.

Classes IPC  ?

• H05B 37/02 - Commande

Abrégé

This vehicle power supply control circuit is provided with: a first input terminal to which a voltage output by a DC-DC converter for performing voltage conversion on a power supply voltage is supplied; a second input terminal to which the power supply voltage is supplied; an output terminal that outputs a voltage for controlling a semiconductor element generating a drive current for a motor generator and having non-saturation region characteristics; a switching circuit having one end connected to the first input terminal and the other end connected to the output terminal, making the connection between the first input terminal and the output terminal conductive by being turned on on the basis of a signal applied to a control terminal, and, meantime, disconnecting the connection between the first input terminal and the output terminal by being turned off on the basis of the signal applied to the control terminal; and a switching control unit for controlling the switching circuit by applying the signal to the control terminal on the basis of the voltage at the second input terminal.

Classes IPC  ?

• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
• H02M 3/00 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu

Abrégé

This electronic module has: a first substrate 11; a second substrate 21 that is provided to one side of the first substrate 11; and a chip module 100 that is provided between the first substrate 11 and the second substrate 21. The chip module 100 has electronic elements 13, 23, and connectors 60, 70, 80 that are electrically connected to the electronic elements 13, 23. The electronic elements 13, 23 extend in the thickness direction of the electronic module.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

This electronic module has: a first substrate 11; a first electronic element 13; a second substrate 21; a second heat radiation layer 29; and a sealing part 90. A non-connection conductor layer 50 that is not electrically connected to the first electronic element 13 is provided to one side of the first substrate 11. The second heat radiation layer 29: has a recess 130 that is recessed in an in-plane direction; has an opening 140 inward, in the in-plane direction, from the peripheral edge; or has a plurality of second heat radiation layer patterns 150. Accordingly, the surface, on one side, of the second substrate 21 is exposed.

Classes IPC  ?

• H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
• H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

This electronic module has: a first substrate 11; a first electronic element 13; a second substrate 21; a second heat radiation layer 29; a sealing part 90; and a terminal portion 100 that is exposed outward from the first lateral surface 90a of the sealing part 90. The second heat radiation layer 29 has a second recess 140 recessed in an in-plane direction on a second lateral surface 90b side which is a side opposed to the first lateral surface 90a, or the second heat radiation layer 29 has a second opening 160 in a second lateral surface region which is, in a planar view, at the opposed side to the first lateral surface 90a with respect to the center of the sealing part 90. Accordingly, the surface of one side of the second substrate 21 is exposed.

Classes IPC  ?

• H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
• H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

This electronic module has: a first heat radiation layer 19; a first substrate 11; a first electronic element 13; a second electronic element 23; a second substrate 21; a second heat radiation layer 29; a sealing part 90; and connectors 60, 70 provided between the first electronic element 13 and the second electronic element 23 or between the second electronic element 23 and the second substrate 21. The first heat radiation layer 19 has a first exposure portion 150 which is at a position corresponding to another side region of the connectors 60, 70, and at which the first substrate 11 is exposed, or the second heat radiation layer 29 has a second exposure portion 140 which is at a position corresponding to one side region of the connectors 60, 70 and at which the second substrate 21 is exposed.

Classes IPC  ?

• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
• H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

This electronic module has: a first substrate 11; electronic elements 13, 23 that are provided to one side of the first substrate 11; a sealing part 90 that seals at least the electronic elements 13, 23; connection terminals 110 that are electrically connected to the electronic elements 13, 23 and exposed from the side surface of the sealing part 90; and stress relaxing terminals 150 that are exposed from the side surface of the sealing part 90, and that are not electrically connected to the electronic elements 13, 23.

Classes IPC  ?

• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,

Abrégé

Provided is a DC/DC converter control device 50 capable of covering, with low loss, a wide range of power that can be output. The control device 50 has a selection control unit 60 and a comparison control unit 70. The selection control unit 60 has a reference signal generation unit 61, a minimum value selection unit 62, and a voltage control unit 63. The comparison control unit 70 has a comparison unit 71, a frequency control unit 72, an inter-phase control unit, and a pulse drive unit 74. When charging a battery rapidly, for example, a DC output current Io is supplied to the battery by the frequency-control of the frequency control unit 72. In a power supply region under a boundary line BL of a current resonance control limit in which control is difficult, the frequency control is switched to the inter-phase control of the inter-phase control unit 73 and the DC output current Io is supplied to the battery.

Classes IPC  ?

• H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire

Abrégé

Provided is a MOSFET 100 that is equipped with: a semiconductor base body 110 wherein a super junction structure is configured with an n-type column region 113 and a p-type column region 115; and a gate electrode 122 formed via a gate insulating film 120. In the semiconductor base body 110, when a region that provides main operations as a MOSFET is specified as an active region A1, a region that holds a withstand voltage is specified as an outer peripheral region A3, and a region between the active region A1 and the outer peripheral region A3 is specified as an active connection region A2, crystal defects are generated merely in the active region A1 and the active connection region A2, among the active region A1, the active connection region A2, and the outer peripheral region A3 of the semiconductor base body 110. A manufacturing method for manufacturing the MOSFET 100, and a power conversion circuit equipped with the MOSFET 100 are also provided. The MOSFET 100 relating to the present invention is a MOSFET, which is capable of reducing a recovery loss, and which generates less oscillation compared with conventional MOSFETs.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices

Abrégé

A power conversion device 1 of the present invention is characterized by being provided with two or more sets of power modules, which respectively have switching elements 200, 202, and switching element control circuits 100, 102 that respectively have third electrode voltage control units 10, 12 and temperature detection units 20, 22. The power conversion device 1 is also characterized in that: power modules PM1, PM2 are connected in parallel; the switching element control circuits 100, 102 respectively have temperature comparison units 30, 32, which respectively calculate the average operation temperatures of the switching elements 200, 202, and compare the average operation temperatures and the corresponding operation temperatures of the switching elements 200, 202 with each other; and the third electrode voltage control units 10, 12 respectively control third electrode voltages on the basis of information including the average operation temperatures, the operation temperatures of the switching elements 200, 202, and the threshold voltages when operating the switching elements. With the power conversion device 1 of the present invention, a switching loss can be reduced, and as a device, service life can be lengthened.

Classes IPC  ?

• H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation

Abrégé

gsgsgs detected by the gate voltage detection unit 21. The semiconductor switch control circuit 16 according to the present invention is unlikely to cause self-oscillation when starting a power supply or during an overload, at which times a large switching current flows.

Classes IPC  ?

• H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
• H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites

Abrégé

The power module 1 according to the present invention is configured so as to implement switching between a control mode for controlling the ON/OFF operation of a switching element 200 having a first electrode, a second electrode, and a third electrode, and a degradation assessment mode for assessing degradation on the basis of information including ΔVgs on the basis of information including a threshold voltage detected prior to supplying current for stress to the switching element and a threshold voltage detected after supplying current for stress to the switching element. This power module 1 can assess degradation during operation, and can thereby prevent a device from being damaged, increase the utilization rate, and reduce costs.

Classes IPC  ?

• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
• G01R 31/00 - Dispositions pour tester les propriétés électriques; Dispositions pour la localisation des pannes électriques; Dispositions pour tests électriques caractérisées par ce qui est testé, non prévues ailleurs
• G01R 31/26 - Test de dispositifs individuels à semi-conducteurs