A device that incorporates teachings of the subject disclosure may include, for example, a multilayer initial oxide on a silicon substrate, where the multilayer initial oxide comprises amorphous polysilicates and a group one metal or a group two metal; a first electrode layer on the multilayer initial oxide; a dielectric layer on the first electrode layer; a second electrode layer on the dielectric layer, where an edge alignment spacing between at least one pair of corresponding electrode edges of two electrode layers of the capacitor is two microns or less; and connections for the first and second electrode layers. Other embodiments are disclosed.
H01L 23/34 - Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
H01G 4/33 - Condensateurs à film mince ou à film épais
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/92 - Condensateurs avec barrière de potentiel ou barrière de surface
2.
TUNABLE COPLANAR CAPACITOR WITH VERTICAL TUNING AND LATERAL RF PATH AND METHODS FOR MANUFACTURING THEREOF
A tunable capacitor that incorporates teachings of the subject disclosure may include: a substrate; a first dielectric layer over the substrate; a plurality of bias lines encapsulated between the substrate and the tunable dielectric layer; a first metal layer over the tunable dielectric layer (wherein the first metal layer has a plurality of first gaps); an upper bias layer over the first metal layer (herein each of a plurality of portions of the upper bias layer extend through a respective one of the plurality of first gaps to come into contact with the first dielectric layer, and wherein at least a second gap is disposed in the upper bias layer); and a second metal layer (wherein a portion of the second metal layer extends through the second gap to come into contact with the first metal layer). Other embodiments are disclosed.
H01G 7/06 - Condensateurs dont la capacité varie par des moyens non mécaniques; Procédés pour leur fabrication à diélectrique choisi pour sa variation de permittivité en fonction de la tension appliquée, c. à d. condensateurs ferro-électriques
3.
SMALL-GAP COPLANAR TUNABLE CAPACITORS AND METHODS FOR MANUFACTURING THEREOF
A coplanar capacitor that incorporates teachings of the subject disclosure may include: a substrate; a voltage-tunable dielectric layer over the substrate; a plurality of bias lines over the voltage-tunable dielectric layer (wherein the bias lines are covered by an inter-level dielectric); a plurality of sidewall spacers (wherein each of the sidewall spacers is located adjacent one of the bias lines and each of the sidewall spacers spans between a respective portion of the voltage-tunable dielectric layer and a respective portion of the inter-level dielectric); and an electrode over the inter-level dielectric, and over portions of the voltage-tunable dielectric layer that are not covered by the plurality of bias lines and that are not covered by the sidewall spacers, wherein a plurality of gaps are disposed in the electrode. Other embodiments are disclosed.
H01G 7/06 - Condensateurs dont la capacité varie par des moyens non mécaniques; Procédés pour leur fabrication à diélectrique choisi pour sa variation de permittivité en fonction de la tension appliquée, c. à d. condensateurs ferro-électriques
H01G 13/06 - Appareils spécialement adaptés à la fabrication de condensateurs; Procédés spécialement adaptés à la fabrication de condensateurs non prévus dans les groupes avec dispositions pour enlever les surfaces de métal
H01L 27/00 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
4.
METHOD AND APPARATUS FOR A THIN FILM DIELECTRIC STACK
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
H01G 4/33 - Condensateurs à film mince ou à film épais
H01B 3/12 - Isolateurs ou corps isolants caractérisés par le matériau isolant; Emploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances inorganiques céramiques
H01G 4/232 - Bornes pour la connexion électrique d'au moins deux couches d'un condensateur à empilement ou à enroulement
A system that incorporates teachings of the subject disclosure may include, for example, adjusting a matching network utilizing a weighted tuning state resulting in a tuning where the weighted tuning state is determined from applying a weighting factor to multiple tuning states that are predetermined tuning states based on increasing performance associated with types of operation, comparing a measured performance metric to a weighted reference metric resulting in a comparison where the weighted reference metric is determined from applying the weighting factor to multiple reference metrics that are predetermined expected metrics based on the increasing performance associated with the types of operation, and responsive to a first determination that the measured performance metric satisfies a threshold according to the comparison, continuing the tuning utilizing the weighted tuning state. Other embodiments are disclosed.
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor having a substrate, a first electrode layer on the substrate, a first dielectric layer on the first electrode layer where the first dielectric layer has a columnar-oriented grain structure, a group of second dielectric layers stacked on the first dielectric layer where each of the group of second dielectric layers has a randomly- oriented grain structure, and a second electrode layer on the group of second dielectric layers. Other embodiments are disclosed.
High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at least two grain size defining parameters of the deposition are simultaneously provided, the respective gradients occurring for a first time period thereby producing a smoothly changing columnar crystalline habit of the voltage-tunable dielectric material. When the first time period has ended, the deposition continues for a second time period where the grain size defining parameters are held constant. In particular, the smoothly changing columnar crystalline habit of the voltage-tunable dielectric material is intentionally distorted by simultaneously providing the respective gradients in the in at least two grain size defining parameters of the deposition.
C30B 30/00 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques
H01G 7/06 - Condensateurs dont la capacité varie par des moyens non mécaniques; Procédés pour leur fabrication à diélectrique choisi pour sa variation de permittivité en fonction de la tension appliquée, c. à d. condensateurs ferro-électriques
A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar- oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed.
H01L 21/64 - Fabrication ou traitement de dispositifs à l'état solide autres que des dispositifs à semi-conducteurs, ou de leurs parties constitutives, par des méthodes non spécialement adaptées à un seul type de dispositifs couverts par les groupes ou par les s
A system that incorporates teachings of the subject disclosure may include, for example, an antenna system coupled with the transceiver that includes a first antenna and a second antenna where one of the first or second antennas is operating as a primary antenna and the other of the first or second antennas is operating as a diversity antenna. The system can include an RF switch connected with the antenna system, where the RF switch has a first position in which the first antenna is the primary antenna and the second antenna is the diversity antenna, and wherein the RF switch has a second position in which the second antenna is the primary antenna and the first antenna is the diversity antenna. The system can include a controller coupled with the matching network and with the RF switch, where the controller receives first reflection measurements associated with the antenna system, and where the controller adjusts the RF switch to select between the first and second positions according to the first reflection measurements.
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
H04B 17/12 - Surveillance; Tests d’émetteurs pour l’étalonnage d’antennes d’émission, p.ex. de l’amplitude ou de la phase
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
10.
MOBILE WIRELESS COMMUNICATIONS DEVICE WITH IMPROVED BROADBAND ANTENNA IMPEDANCE MATCHING
A mobile electronic device is provided. In one aspect, the mobile electronic device comprises a chassis including a ground plane; a processor carried by the chassis; a frequency tunable antenna carried by the chassis and fed by an inductor; a communications interface carried by the chassis and operative with the processor for receiving and transmitting RF signals via the frequency tunable antenna; audio circuitry carried by the chassis and operative with the communications interface and processor; an audio transducer having a coil in proximity to the frequency tunable antenna for at least one of receiving and transmitting audio signals from and to the audio circuitry; and at least one RF choke configured for blocking RF energy from the frequency tunable antenna through the audio transducer to the ground plane and decoupling the antenna from the audio transducer to minimize any detuning of antenna impedance match and degradation in antenna gain. At least one tunable capacitor is connected in parallel with at least one of the audio transducer coil, the RF choke and the inductor, for providing dynamic RF energy blocking over an operating frequency range of the frequency tunable antenna.
H04B 1/3827 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission Émetteurs-récepteurs, c. à d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception Émetteurs-récepteurs portatifs
11.
METHODS AND APPARATUS FOR TUNING A COMMUNICATION DEVICE
A system that incorporates teachings of the subject disclosure may include, for example, method for initiating a mode of operation of a communication device, measuring a signal to determine an adverse operational effect on the communication device, determining a tuning state from the signal to compensate for the adverse operational effect, tuning a circuit of the communication device having a variable reactance according to the tuning state, storing the tuning state in a memory of the communication device, and tuning the circuit according to the tuning state retrieved from the memory responsive to detecting a reoccurrence of the mode of operation of the communication device. Other embodiments are disclosed.
A system that incorporates teachings of the subject disclosure may include, for example, determining antenna coupling among a plurality of antennas of the communication device and adjusting beam forming for the plurality of antennas utilizing phase shifters coupled with radiating elements of the plurality of antennas, where the adjusting of the beam forming is based on forming a desired antenna pattern that increases radiated throughput and reduces the antenna coupling among the plurality of antennas. Other embodiments are disclosed.
H01Q 3/38 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables les déphaseurs étant numériques
A system that incorporates teachings of the subject disclosure may include, for example, a controller that determines a radiated throughput for at least one of an uplink throughput or a downlink throughput of the communication device, reduces transmit power for the communication device responsive to the radiated throughput satisfying a throughput threshold, and tunes a matching network of the communication device responsive to the radiated throughput not satisfying the throughput threshold. Other embodiments are disclosed.
H04W 52/26 - Commande de puissance d'émission [TPC Transmission power control] le TPC étant effectué selon des paramètres spécifiques utilisant le débit de transmission ou la qualité de service [QoS Quality of Service]
A system and process that incorporates teachings of the subject disclosure may include, for example, a multiband antenna as may be used in mobile communications devices. The multiband antenna includes a common feed port coupled to each of a first radiating portion and a second radiating portion. Each of the first and second radiating portions defines a respective resonant bandwidth. The multiband antenna also includes at least one adjustable tuning circuit disposed between physically isolated radiating segments of a respective one of the first and second radiating portions. Adjustment of the tuning circuit alters a corresponding resonant bandwidth allowing the corresponding resonant bandwidth to be tuned independently of the other resonant bandwidth and without affecting performance of the other resonant bandwidth. In at least some embodiments, the tuning circuit can include a tunable phase shifter having one or more components, each having a variable reactance. Other embodiments are disclosed.
A system that incorporates teachings of the subject disclosure may include, for example, a method for detecting a plurality of use cases of a communication device, determining an initial tuning state for each of a plurality of tuning algorithms according to the plurality of use cases, configuring each of the plurality of tuning algorithms according to their respective initial tuning state, executing a first tuning algorithm of the plurality of tuning algorithms according to an order of execution of the plurality of tuning algorithms, detecting a stability condition of the first tuning algorithm, and executing a second tuning algorithm of the plurality of tuning algorithms responsive to the detected stability condition of the first tuning algorithm. Each tuning algorithms can control one of a tunable reactive element, a control interface, or both of one of a plurality of circuit components of a radio frequency circuit. Other embodiments are disclosed.
H03J 3/24 - Accord continu de plusieurs circuits résonnants simultanément, ces circuits étant accordés sur sensiblement la même fréquence, p.ex. pour dispositif de réglage unique
16.
METHOD AND APPARATUS FOR REDUCING CHARGE AND DISCHARGE TIME OF CAPACITIVE ELEMENTS
A system that incorporates teachings of the subject disclosure may include, for example, emulating a behavior of an RF capacitive device utilizing a mirror circuit; and providing feedback signals to an input of an operational amplifier via a feedback node coupled with the mirror circuit. Other embodiments are disclosed.
A system that incorporates teachings of the present disclosure may include, for example, one or more matching network elements and a controller coupled with the one or more matching network elements. The controller can determine antenna efficiency information associated with one or more antennas of a group of antennas of a communication device. The controller can determine antenna isolation information associated with the one or more antennas. The controller can tune the one or more matching network elements for at least a portion of the group of antennas based on the antenna efficiency information and the antenna isolation information. Additional embodiments are disclosed.
A system that incorporates teachings of the present disclosure may include, for example, a tuning system for a communication device having an antenna where the tuning system includes at least one first tunable element connected with at least one radiating element of the antenna for tuning the antenna where the adjusting of the at least one first tunable element is based on a closed loop process, and a matching network having at least one second tunable element coupled at a feed point of the antenna for tuning the matching network based on an operational parameter of the communication device. Additional embodiments are disclosed.
A system that incorporates teachings of the present disclosure may include, for example, a non-transitory computer-readable storage medium including computer instructions to obtain at least one operational parameter associated with a communication device and to adjust a steerable antenna of the communication device when the communication device does not satisfy an impedance threshold, where the satisfying of the impedance threshold is determined based on the at least one operational parameter. Additional embodiments are disclosed.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H01Q 3/34 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques
20.
METHOD AND APPARATUS FOR RADIO ANTENNA FREQUENCY TUNING
A system that incorporates teachings of the present disclosure may include, for example, a non-transitory computer-readable storage medium, which can include computer instructions to determine a subset of use cases from a group of use cases stored in a memory of a communication device, and to determine a target use case from among the subset of use cases based on an operational parameter associated with a transceiver of the communication device. Additional embodiments are disclosed.
A system that incorporates teachings of the present disclosure may include, for example, a process for obtaining a first operational metric for a transmitter of a communication device, determining a range of impedances based on the first operational metric where the range of impedances is associated with an acceptable level of performance for the communication device, obtaining a second operational metric for the transmitter, determining a target impedance within the range of impedances based on the second operational metric, and tuning a first impedance matching network based on the target impedance, where the first impedance matching network is coupled with a first antenna of the communication device, and where the tuning is based on adjusting a first variable component of the first impedance matching network. Additional embodiments are disclosed.
A communication device comprises a controller to detect interference and to determine a tuning state of a variable matching network based on whether the interference exists. In some examples, the tuning state is determined based on information from at least one of an open-loop or closed-loop feedback configuration.
A system that incorporates teachings of the present disclosure may include, for example, a communication device having a controller to provision a matching network that controls one or more operational characteristics of one of a receiver portion and a transmitter portion of the communication device according to a profile describing one or more characteristics of a communication system from which the communication device operates. Additional embodiments are disclosed.
H04W 88/06 - Dispositifs terminaux adapté au fonctionnement dans des réseaux multiples, p.ex. terminaux multi-mode
H04B 1/52 - Dispositions hybrides, c. à d. dispositions pour la transition d’une transmission bilatérale sur une voie à une transmission unidirectionnelle sur chacune des deux voies ou vice versa
24.
TECHNIQUES FOR IMPROVED ADAPTIVE IMPEDANCE MATCHING
An embodiment of the present invention provides an apparatus, comprising an RF matching network connected to at least one RF input port and at least one RF output port and including one or more voltage or current controlled variable reactive elements; and wherein the RF matching network is tuned to optimize the RF matching network and wherein said tuning is limited by a predetermined number of tuning steps that are taken within a transmit burst and/or limited by the magnitude of each step taken within a transmit burst and/or limited to the steps only being allowed between bursts.
brevets
