The mass spectrometer includes a sample stage, an irradiation unit that irradiates the sample with an energy beam and ionizes a component of the sample, an extraction electrode that extracts the ionized sample from the surface of the sample by a potential difference from the sample stage, an MCP that emits electrons in accordance with the ionized sample, an imaging part that acquires an image based on the electrons emitted by the MCP, and a control unit that controls operations of the irradiation unit, the extraction electrode, and the imaging part. The control unit changes the potential of the extraction electrode at a timing in accordance with the detection target component after the irradiation of the energy beam by the irradiation unit, and causes the imaging part to acquire an image as an analysis target in a period in accordance with the detection target component.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/00 - Spectromètres pour particules ou tubes séparateurs de particules
2.
SCANNING MICROSCOPE UNIT, SCANNING MICROSCOPE, AND CALIBRATION METHOD FOR SCANNING MICROSCOPE UNIT
A scanning microscope unit includes: a light source for outputting irradiation light; a photodetector; a MEMS mirror for scanning an irradiation light over an observation object, and for guiding an observation light toward the photodetector; a scanning lens for guiding the irradiation light scanned by the MEMS mirror, to a microscope optical system, and for guiding the observation light imaged by the microscope optical system, to the MEMS mirror; and a frame member formed in a frame shape to define an opening, and disposed on a side of the microscope optical system with respect to the scanning lens such that the irradiation light and the observation light pass through the opening. The frame member includes a calibration portion provided in a side portion defining the opening, and for generating calibration light including a sensitivity wavelength of the photodetector in response to an incidence of the irradiation light.
An optical device includes a support portion, a first movable portion having an optical surface, a second movable portion having a frame shape and surrounding the first movable portion, a first coupling portion coupling the first movable portion and the second movable portion to each other, a second coupling portion coupling the second movable portion and the support portion to each other, and a softening member which has a softening characteristic and to which stress is applied when the first movable portion swings around a first axis. When viewed in a direction perpendicular to the optical surface, the softening member is provided to a portion of the second movable portion, the portion extending between a drive element and the first coupling portion, and is not electrically connected to an outside.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
A photodetector includes a first conduction-type semiconductor layer, a semiconductor light absorption layer provided on the first conduction-type semiconductor layer, and a second conduction-type semiconductor layer provided on the semiconductor light absorption layer. Inside the semiconductor light absorption layer, finely modified portions forming a localized inhomogeneous electric field inside the semiconductor light absorption layer by scattering incident light are provided in a manner of being separated from the second conduction-type semiconductor layer.
A film thickness measuring apparatus measures a film thickness of a sample during a manufacturing step. The film thickness measuring apparatus includes a lens focusing light (plasma light) generated in the manufacturing step and reflected by one surface of the sample, an inclined dichroic mirror having a transmissivity and a reflectivity changing in accordance with a wavelength in a predetermined wavelength region and separating light focused by the lens through transmission and reflection, an area sensor capturing an image of light separated by the inclined dichroic mirror, and a control apparatus estimating the film thickness of the sample on the basis of a signal from the area sensor capturing an image of light and obtaining a film thickness distribution on the one surface of the sample. Light reflected by the sample includes light having a wavelength included in the predetermined wavelength region of the inclined dichroic mirror.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
[Equation 1]
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
[Equation 1]
DB1=∫|F1(θ)−F01(θ)|dθ (1)
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
[Equation 1]
DB1=∫|F1(θ)−F01(θ)|dθ (1)
[Equation 2]
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
[Equation 1]
DB1=∫|F1(θ)−F01(θ)|dθ (1)
[Equation 2]
DB2=∫|F2(θ)−F02(θ)|dθ (2)
A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less,
[Equation 1]
DB1=∫|F1(θ)−F01(θ)|dθ (1)
[Equation 2]
DB2=∫|F2(θ)−F02(θ)|dθ (2)
F1(θ) is a far field pattern when it is assumed that only the first emitter is present, and F2(θ) is a far field pattern when it is assumed that only the second emitter is present. F01(θ) is a far field pattern of one of two modes corresponding to a fundamental mode of the light emitted from the first and second emitters, and F02(θ) is a far field pattern of the other one.
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/02218 - Matériaux du boîtier; Matériaux de remplissage du boîtier
H01S 5/30 - Structure ou forme de la région active; Matériaux pour la région active
H01S 5/343 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p.ex. laser AlGaAs
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
8.
RADIATION DETECTOR, RADIATION DETECTOR MANUFACTURING METHOD, AND SCINTILLATOR PANEL UNIT
A radiation detector includes a sensor panel having a light receiving surface, a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface, and an adhesive layer. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. The adhesive layer is provided continuous over the first scintillator panel and the second scintillator panel.
A light-emitting diode element includes a semiconductor substrate having a first surface and a second surface on a side opposite to the first surface, a semiconductor lamination portion formed on the first surface of the semiconductor substrate, a first electrode connected to a part of the semiconductor lamination portion on the semiconductor substrate side, and a second electrode connected to a part of the semiconductor lamination portion on a side opposite to the semiconductor substrate. The semiconductor lamination portion includes an n-type semiconductor layer, an active layer having a p-type conductivity and laminated on the n-type semiconductor layer, and a p-type semiconductor layer laminated on the active layer on a side opposite to the n-type semiconductor layer. The active layer has a multiple quantum well structure constituted of barrier layers including AlInAs and well layers including InAsSb alternately laminated therein.
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
10.
DISPERSION MEASUREMENT APPARATUS AND DISPERSION MEASUREMENT METHOD
A dispersion measurement apparatus includes a pulse forming unit, a correlation optical system, a beam splitter, an operation unit, an imaging unit, a spatial filter unit, and a photodetector. The pulse forming unit forms a light pulse train including light pulses having time differences and different center wavelengths. The beam splitter branches the light pulse train passed through a measurement object. The imaging unit disperses one light pulse train and images each light pulse. The spatial filter unit extracts light of a partial region of the other light pulse train. The correlation optical system outputs correlation light including a cross-correlation or an autocorrelation of the extracted light. The photodetector detects a temporal waveform of the correlation light. The operation unit estimates a wavelength dispersion amount in the measurement object based on a feature value of the temporal waveform.
A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 27/14 - Systèmes divisant ou combinant des faisceaux fonctionnant uniquement par réflexion
12.
OPTICAL PULSE GENERATION DEVICE AND OPTICAL PULSE GENERATION METHOD
An optical pulse generation device includes an optical resonator of mode-locked type, a light source, and a waveform controller. The optical resonator includes an optical amplification medium and generates, amplifies, and outputs laser light. The light source is optically coupled to the optical resonator and supplies excitation light to the optical amplification medium. The waveform controller is arranged in the optical resonator, and controls a time waveform of the laser light within a predetermined period to convert the laser light into an optical pulse train including two or more optical pulses within a period of the optical resonator. The optical resonator amplifies the optical pulse train after the predetermined period and outputs the optical pulse train having amplified as the laser light.
H01S 3/1118 - Absorbeurs saturables à semi-conducteurs, p.ex. miroirs absorbeurs saturables à semi-conducteurs [SESAM]; Absorbeurs saturables à l'état solide, p.ex. à base de nanotubes de carbone [CNT]
H01S 3/102 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p.ex. par commande des procédés ou des appareils pour l'excitation
An analysis apparatus includes a light emission unit configured to emit measurement light including light in a 900 nm wavelength band to a sample, a light detection unit configured to acquire spectrum data of reflected light in the sample, a data processing unit configured to perform a noise removing process on the spectrum data, a first determination unit configured to store a PLS regression model associated with prediction of an amount of triglyceride in the sample and to determine an amount of triglyceride in the sample by applying the spectrum data subjected to the noise removing process to the PLS regression model, and a second determination unit configured to store data indicating a correlation with an amount of triglyceride in the sample and to determine an amount of brown adipose tissue or beige fat in the sample based on the data and the amount of triglyceride determined by the first determination unit.
A61B 5/00 - Mesure servant à établir un diagnostic ; Identification des individus
G01J 3/42 - Spectrométrie d'absorption; Spectrométrie à double faisceau; Spectrométrie par scintillement; Spectrométrie par réflexion
G01N 21/3563 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solides; Préparation des échantillons à cet effet
14.
EMISSION OPTICAL SYSTEM, EMISSION DEVICE, AND OPTICAL MEASUREMENT DEVICE
An irradiation optical system configured to irradiate an object with first light includes: a light source including a surface emitting element emitting the first light from a light emitting surface; a light shaping member on which the first light emitted from the light source is incident via a light incidence surface and which shapes the incident first light using a light passing hole and emits the shaped first light; and a first lens configured to form an image of the first light emitted from the light shaping member on the object. A distance between the light emitting surface of the surface emitting element and the light incidence surface of the light shaping member is equal to or less than 26 times a size.
A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.
H01L 31/0368 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des semi-conducteurs polycristallins
H01L 31/109 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à hétérojonction
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
16.
RADIATION DETECTOR AND PRODUCTION METHOD FOR RADIATION DETECTOR
A radiation detector includes: a sensor panel; a scintillator panel; and a resin frame provided across the sensor panel and the scintillator panel, in which the sensor panel has a mounting surface where the scintillator panel is mounted, the scintillator panel includes a support body having a first surface, a second surface on a side opposite to the first surface, and a first side surface connecting the first surface and the second surface to each other, and a scintillator layer formed on the first surface and containing a plurality of columnar crystals, the scintillator panel is mounted on the mounting surface such that the scintillator layer and the first surface face the mounting surface, and the scintillator layer has a second side surface extending so as to be positioned on the same plane as the first side surface.
Disclosed is a laser medium unit that includes a laser medium and a holding body. The laser medium has a pair of end surfaces. The holding body surrounds the laser medium when viewed form a direction intersecting with the pair of end surfaces and holds the laser medium. The holding body includes a deformation allowing portion that extends from the inside to the outside of the holding body when viewed from the direction intersecting with the pair of end surfaces. The laser medium and the holding body are in contact with each other. A contact region of the holding body with the laser medium has a width in the direction intersecting with the pair of end surfaces and extends along a side surface of the laser medium when viewed from the direction intersecting with the pair of end surfaces.
H01S 3/02 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure
H01S 3/04 - Dispositions pour la gestion thermique
A scintillator panel includes: a first flexible support body having a first surface and a second surface on a side opposite to the first surface; a scintillator layer formed on the first surface and containing a plurality of columnar crystals; a second flexible support body provided on the second surface; an inorganic layer provided on the second flexible support body so as to be interposed between the second surface and the second flexible support body; and a first adhesive layer bonding the second surface and the inorganic layer to each other. A radiation detector includes: the scintillator panel; and a sensor panel including a photoelectric conversion element, in which the scintillator panel is provided on the sensor panel such that the first surface is on the sensor panel side with respect to the second surface.
The present embodiment relates to an electron multiplier or the like having a structure for realizing fast response characteristics as compared with the related art, and the electron multiplier includes at least a dynode unit, a stem, a coaxial cable, a conductive member, and a capacitor. The dynode unit includes multiple-stage dynodes, an anode, and a pair of insulating support members. An end portion of an outer conductor is drawn into the dynode unit together with an exposed portion of an inner conductor constituting a part of one end portion of the coaxial cable. With this configuration, it is possible to arrange the capacitor in a space between the dynode unit and the stem, and it is possible to fix the exposed portion of the inner conductor to a portion of the anode interposed between the pair of insulating support members.
A light emitting sealed body includes: a housing which stores a discharge gas and is provided with a first opening to which first light is incident along a first optical axis and a second opening from which second light is emitted along a second optical axis; a first window portion which hermetically seals the first opening; and a second window portion which hermetically seals the second opening. The housing is formed of a light shielding material which does not transmit the first light and the second light. An internal space is defined by the housing, the first window portion, and the second window portion and the internal space is filled with the discharge gas. The first opening and the second opening are disposed so that the first optical axis and the second optical axis intersect each other.
A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
In a mirror unit, a first wall portion is higher than a second wall portion. A window member is disposed on a top surface of the first wall portion and a top surface of the second wall portion and is inclined with respect to a mirror surface. When any one of first to fourth wall portions is set as a first reference wall portion, in a cross-section perpendicular to the first reference wall portion, a first line passing through a first end at a side of the first reference wall portion in the mirror surface and a first corner portion formed at the side of the first reference wall portion by an outer surface and a first side surface in the window member intersects the first wall portion. A wiring portion includes a portion extending inside a base and leads outside a frame member.
METHOD FOR MEASURING LIGHT TRANSMISSION MEDIUM, DEVICE FOR MEASURING LIGHT TRANSMISSION MEDIUM, PROGRAM FOR MEASURING LIGHT TRANSMISSION MEDIUM, AND RECORDING MEDIUM
In a measurement method, light inputs with the same center wavelength and different properties are performed on a light transmission medium, and a measured value of an intensity spectrum of each of light outputs is acquired. An error between the measured value and an estimated value of the intensity spectrum calculated based on a theoretical relation between an intensity spectrum and a phase spectrum of each of the light inputs, a nonlinear coefficient and a wavelength dispersion value of the light transmission medium, and the intensity spectrum of each of the light outputs is calculated while changing the nonlinear coefficient and the wavelength dispersion value. Further, the nonlinear coefficient and the wavelength dispersion value are determined based on a difference, in a relation between the nonlinear coefficient and the wavelength dispersion value and the error, between the light inputs.
A biological sample holding container includes: a container main body having a bottom surface portion having a placement region for a biological sample and a side surface portion provided on the bottom surface portion so as to surround the placement region; and an annular holding member insertable and removable inside the side surface portion. The holding member holds a film covering the biological sample on the placement region with the bottom surface portion by being inserted inside the side surface portion together with the film.
A laser processing apparatus includes a support unit that supports a wafer including a plurality of functional elements disposed adjacent to each other via a street, an irradiation unit that irradiates the street with laser light, and a control unit that controls the irradiation unit based on information about the streets so that a first region and a second region of the street are simultaneously irradiated with the laser light, and a power of the laser light for removing a surface layer of the street in the first region is higher than a power for removing the surface layer of the street in the first region. The information about the street includes information that a processing threshold value indicating a difficulty of laser processing in the first region is lower than a processing threshold value in the second region.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p.ex. pour faire des fissures d'amorce de rupture
B23K 26/03 - Observation, p.ex. surveillance de la pièce à travailler
B23K 26/364 - Gravure au laser pour faire une rainure ou une saignée, p.ex. pour tracer une rainure d'amorce de rupture
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p.ex. des rayons laser
A spectroscopic measurement apparatus includes an optical system, a photodetector, and an analysis unit. The optical system guides measurement target light from an object to a light receiving surface of the photodetector, and forms a spectral image of the measurement target light on the light receiving. The photodetector includes the light receiving surface on which a plurality of pixels are arranged respectively on a plurality of rows. The photodetector receives the spectral image for a first exposure time by a plurality of pixels in a first region on the light receiving surface, and outputs first spectrum data. The photodetector receives the spectral image for a second exposure time by a plurality of pixels in a second region on the light receiving surface, and outputs second spectrum data. The second exposure time is longer than the first exposure time.
G01J 3/32 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même en étudiant des bandes d'un spectre successivement à l'aide d'un détecteur unique
A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p.ex. sur la position ou la section du faisceau; Mesure de la distribution spatiale de radiations
28.
CONCENTRATING LENS, PHOTODETECTOR WITH CONCENTRATING LENS, CONCENTRATING LENS UNIT
A concentrating lens includes an incident surface, an emitting surface, and a reflective surface. The incident surface includes a central portion and an outer portion. The incident surface is formed by an inner surface of a depression portion. The reflective surface surrounds the emitting surface. The reflective surface extends so as to go toward a first side as going toward an outside. A first light incident on the outer portion of the incident surface transmits through the outer portion, is reflected by the reflective surface, reflected by the incident surface, and incident on the emitting surface. A second light incident on the central portion of the incident surface transmits through the central portion and is incident on the emitting surface. The central portion of the incident surface reflects the first light reflected by the reflective surface, toward the emitting surface and transmits the second light.
The spectrometer includes: a light source unit emitting a laser beam; a mirror unit including a first plane mirror having a first mirror surface and a second plane mirror having a second mirror surface, wherein a measurement target is introduced between the first mirror surface and the second mirror surface; and a light detector detecting the laser beam returned by multiple reflection between the first mirror surface and the second mirror surface. The first mirror surface and the second mirror surface are arranged non-parallel to each other when viewed from the Z-axis direction so as to form an optical path of the laser beam reciprocating in the Y-axis direction while performing multiple reflection between the first mirror surface and the second mirror surface. The optical path of the laser beam between the first mirror surface and the second mirror surface is inclined with respect to the Z-axis direction.
An active energy irradiation device includes: a plurality of active energy irradiation units; a housing that houses the active energy irradiation units; an exhaust unit that is provided in the housing, and that discharges air to an outside of the housing; and an inert gas suction unit that suctions an inert gas outside the housing, and that allows the inert gas to flow into the housing, wherein an air flow path allowing the air to flow through, and an inert gas flow path allowing the inert gas to flow through are provided inside the housing, the air flow path and the inert gas flow path merge with each other, and the exhaust unit exhausts the inert gas together with the air.
An intra-oral imaging system includes an imaging device and a control device. The imaging device includes an imager, a controller, and a case in which the imager and the controller are housed. The imager performs imaging detection for detecting radiation in order to acquire an image of an object and monitoring detection for detecting radiation in order to monitor the dose of radiation. The controller transmits an imaging signal and a monitoring signal to the control device, the imaging signal acquired by the imaging detection and the monitoring signal acquired by the monitoring detection. The control device receives the imaging signal and the monitoring signal, and transmits a control command to the controller, the control command generated based on the monitoring signal. The controller controls the imager according to the control command.
The present invention relates to a method for assessing mitochondrial function in a tissue or organ other than the kidney in a test subject, including: a step of calculating a ratio (BUN/CRE) of blood urea nitrogen (BUN) concentration to blood creatinine (CRE) concentration in a test subject; and a step of estimating mitochondrial activity in a tissue or organ other than the kidney in the test subject using the calculated ratio (BUN/CRE).
G01N 33/70 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique faisant intervenir la créatine ou la créatinine
G01N 33/62 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique faisant intervenir l'urée
33.
LIGHT-EMITTING ELEMENT, OPTICAL DETECTION MODULE, MANUFACTURING METHOD FOR LIGHT-EMITTING ELEMENT, AND SCANNING ELECTRON MICROSCOPE
There are provided a light-emitting element, an optical detection module, a method for manufacturing a light-emitting element, and a scanning electron microscope using the same, by which it is possible to reduce crosstalk and expand the range of applications. A light-emitting element includes a fiber optic plate substrate having transparency to fluorescence and a light-emitting layer as a nitride semiconductor layer having a quantum well structure. In the light-emitting element, the fiber optic plate substrate and the light-emitting layer are directly bonded to each other.
H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
An intra-oral imaging device includes: an imager that detects radiation transmitted through an object while being placed in an oral cavity; and a controller that controls the imager while being placed outside the oral cavity. The imager includes an image sensor including a plurality of pixels for acquiring an image of the object. While power is being supplied to the controller, the controller supplies power to the image sensor in an imaging period during which the image sensor performs imaging and stops supplying the power to the image sensor in a standby period during which the image sensor is on standby.
A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The ion sensor includes a substrate and a plurality of detection units. Each detection unit includes an ID portion, an ICG electrode, a TG electrode, an SG electrode, an electrode pad, and an ion sensitive film. The SG electrode is disposed between the ICG electrode and the TG electrode on the main surface of the substrate. The electrode pad is electrically connected to the SG electrode and disposed on the opposite side of the SG electrode from the substrate. The ion sensitive film is provided on the surface of the electrode pad, and changes a potential according to change in ion concentration of the aqueous solution in contact with the ion sensitive film. A width of the ion sensitive film in a facing direction in which the ICG electrode and the TG electrode face each other is greater than a separation width between the ICG electrode and the TG electrode.
An active energy irradiation device includes: an active energy irradiation unit having an emitting surface extending in both a first direction and a second direction, the emitting surface configured to emit an active energy ray to one side in a third direction; an inert gas supply unit having a spray port located on one side in the second direction with respect to the emitting surface, the spray port configured to spray an inert gas to the one side in the third direction; and a structure including a protrusion portion located on the other side in the second direction with respect to the emitting surface, the protrusion portion protruding to the one side in the third direction with respect to the emitting surface. A width in the second direction of the protrusion portion is larger than a width in the third direction of the protrusion portion.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaire; Appareils à cet usage utilisant des radiations électromagnétiques
A shape measurement apparatus includes a light source, an irradiation optical system, an imaging optical system, a spatial light modulator, a focusing optical system, a linear sensor, and a processing unit. The irradiation optical system forms the light into a line shape and irradiates an object. The imaging optical system forms an image of the light reflected by the object. The spatial light modulator, in which a one-dimensional intensity modulation pattern is set on a light modulation plane, spatially intensity-modulates and outputs the light. The focusing optical system focuses the light output from the spatial light modulator in a line shape. The linear sensor receives the light focused in the line shape by pixels. The processing unit performs analysis by the compressive sensing technique for each of the pixels based on the intensity modulation pattern and an output signal from the linear sensor.
A control device 20 includes an image acquisition unit 203 configured to acquire a radiographic image obtained by irradiating a subject F with radiation and capturing an image of the radiation passing through the subject F, a noise map generation unit 204 configured to derive an evaluation value obtained by evaluating spread of a noise value from a pixel value of each pixel in the radiographic image on the basis of relationship data indicating a relationship between the pixel value and the evaluation value and generate a noise map that is data in which the derived evaluation value is associated with each pixel in the radiographic image, and a processing unit 205 configured to input the radiographic image and the noise map to a trained model 207 constructed in advance through machine learning and execute image processing of removing noise from the radiographic image.
A solid-state imaging device includes a pixel array unit, a row control unit, a row readout unit, a column control unit, and a column readout unit. The pixel array unit includes MN pixels each including a photodiode for generating charges by receiving light and arrayed two-dimensionally in M rows and N columns. The pixel inputs an m-th row control signal output from the row control unit to an m-th row control line, inputs an n-th column control signal output from the column control unit to an n-th column control line, and selects whether the charges generated in the photodiode are output to an m-th row output line or an n-th column output line based on a logical value of each of the m-th row control signal and the n-th column control signal.
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H04N 25/766 - Capteurs adressés, p.ex. capteurs MOS ou CMOS comprenant des lignes de commande ou de sortie utilisées pour une pluralité de fonctions, p. ex. pour la sortie, la commande, la réinitialisation ou l'alimentation des pixels
43.
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
A laser processing method includes: a first step of preparing a wafer including a plurality of functional elements disposed to be adjacent to each other via a street; and a second step of, after the first step, irradiating the street with laser light based on information regarding the street such that a surface layer of the street is removed in a first region of the street and the surface layer remains in a second region of the street. The information regarding the street includes information indicating that, when a modified region is formed in the wafer along a line passing through the street, a fracture extending from the modified region does not reach the street along the line in the first region, and reaches the street along the line in the second region.
B23K 26/351 - Travail par rayon laser, p.ex. soudage, découpage ou perçage pour l'ajustage ou l'accord de composants électriques
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
B23K 26/04 - Alignement, pointage ou focalisation automatique du faisceau laser, p.ex. en utilisant la lumière rétrodiffusée
44.
ACTIVE ENERGY IRRADIATION DEVICE AND ACTIVE ENERGY IRRADIATION SYSTEM
An active energy irradiation device includes: an active energy irradiation unit having an emitting surface configured to emit an active energy ray; and an inert gas supply unit having a spray port configured to spray an inert gas. The inert gas supply unit includes a housing provided with the spray port, a connection portion provided to the housing, and a throttle portion provided to the connection portion. A pipe for supplying the inert gas into the housing is connectable to the connection portion.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaire; Appareils à cet usage utilisant des radiations électromagnétiques
A61N 5/10 - Radiothérapie; Traitement aux rayons gamma; Traitement par irradiation de particules
45.
ORGANIC LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japon)
HAMAMATSU PHOTONICS K.K. (Japon)
Inventeur(s)
Adachi, Chihaya
Nakanotani, Hajime
Yamanaka, Takahiko
Hara, Shigeo
Abrégé
An organic light-receiving element includes an organic light-receiving layer containing a plurality of organic semiconductor molecules. Each of the plurality of organic semiconductor molecules is a molecule in which an excited state enabling reverse intersystem crossing from a lowest excited triplet state to a lowest excited singlet state is formed in each of the plurality of organic semiconductor molecules due to irradiation with light.
H10K 30/20 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des jonctions organiques-organiques, p. ex. des jonctions donneur-accepteur
A mirror unit includes an optical scanning device, a frame member, and a window member. The frame member includes first and second wall portions facing each other in an X-axis direction. The first wall portion is higher than the second wall portion. The window member is disposed on a top surface of the first wall portion and a top surface of the second wall portion and is inclined with respect to a mirror surface of the optical scanning device. In a cross-section parallel to the X-axis direction, the first wall portion is separated from a first line passing through a first end at a side of the first wall portion in the mirror surface and a first corner portion formed at the side of the first wall portion by an outer surface opposite to the frame member and a first side surface in the window member.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
47.
RADIATION DETECTOR, RADIATION DETECTOR MANUFACTURING METHOD, AND SCINTILLATOR PANEL UNIT
A radiation detector includes a sensor panel having a light receiving surface, and a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. A first angle in the first scintillator panel is 90 degrees or less. A second angle in the second scintillator panel is 90 degrees or less.
A spectroscopic module includes a plurality of beam splitters that are arranged along an X direction; a plurality of bandpass filters disposed on one side in a Z direction with respect to the plurality of beam splitters facing the plurality of beam splitters, respectively; a light detector disposed on the one side in the Z direction with respect to the plurality of bandpass filters and including a plurality of light receiving regions facing the plurality of bandpass filters, respectively; a first support body supporting the plurality of beam splitters; and a second support body supporting the plurality of bandpass filters. The second support body includes a support portion in which a support surface is formed so as to be open to the one side in the Z direction. The plurality of bandpass filters are disposed on the support surface.
An actuator device manufacturing method includes: a preparation step of preparing an actuator device including a support portion, a movable portion, a connection portion, and a metal member disposed such that a stress acts on the metal member when the movable portion oscillates; an oscillation step of oscillating the movable portion for a predetermined time; an acquisition step of acquiring a parameter related to a viscous resistance in a vibration of the movable portion; and a determination step of determining that the actuator device is qualified, when a difference between the parameter acquired in the acquisition step and a reference value corresponding to the parameter at a start of the oscillation step is a predetermined value or more in a direction in which the viscous resistance decreases, and determining that the actuator device is disqualified, when the difference is less than the predetermined value.
H02K 1/34 - Parties du circuit magnétique à mouvement alternatif, oscillant ou vibrant
H02K 33/02 - Moteurs avec un aimant, un induit ou un système de bobines à mouvement alternatif, oscillant ou vibrant avec des induits entraînés dans un sens par application d'énergie à un système à une seule bobine et ramenés par une force d'origine mécanique, p.ex. par des ressorts
H02N 2/00 - Machines électriques en général utilisant l'effet piézo-électrique, l'électrostriction ou la magnétostriction
An attenuator device includes: a first window pair that includes a pair of first windows having a pair of first surfaces extending to form a Brewster's angle with an optical axis; a rotation holding portion which holds the first window pair to be rotatable around the optical axis; a second window pair that includes a pair of second windows having a pair of second surfaces extending to form a Brewster's angle with the optical axis; and a λ/4 phase element which gives a phase difference of λ/4 between a polarized component parallel to an optical axis and a polarized component orthogonal to the optical axis when a wavelength of laser light is λ. The second window pair is disposed so that a vibration direction of a P-polarized component transmitted through the second window pair is inclined with respect to the optical axis of the λ/4 phase element by 45° when viewed from a direction parallel to the optical axis.
A laser processing method includes a first step of preparing a wafer including a plurality of functional elements disposed to be adjacent to each other via a street, a second step of, after the first step, forming a modified region in the wafer along a line passing through the street, and a third step of, after the second step, irradiating the street with laser light such that a surface layer of the street is removed, and a fracture extending from the modified region reaches a bottom surface of a recess formed by removing the surface layer, along the line.
B23K 26/38 - Enlèvement de matière par perçage ou découpage
B23K 37/00 - Dispositifs ou procédés auxiliaires non spécialement adaptés à un procédé couvert par un seul des autres groupes principaux de la présente sous-classe
53.
ACTIVE ENERGY IRRADIATION DEVICE AND ACTIVE ENERGY IRRADIATION SYSTEM
An active energy irradiation device includes: a plurality of active energy irradiation units; an air-cooled heatsink thermally connected to the active energy irradiation units; a housing that houses the active energy irradiation units and the heatsink; an intake unit that introduces air into the housing; an exhaust unit that discharges the air to an outside of the housing; and a duct provided between the heatsink and the exhaust unit inside the housing, and allowing the air, which has passed through the heatsink, to flow through to the exhaust unit. An air presence region where the air exists before passing through the heatsink is provided around the duct inside the housing so as to surround the duct.
A spectroscopic unit includes a housing having a wall part formed with an opening, a first aperture part formed with a first aperture, and a second aperture part formed with a second aperture, in which a length of the second aperture in the facing direction is larger than a length of the first aperture in the facing direction, an outer edge of the first aperture is positioned inside each of an outer edge of the opening and an outer edge of the second aperture, and the first aperture includes at least one of a first tapered portion reaching a first surface of the first aperture part and extending toward the first surface, and a second tapered portion reaching a second surface of the first aperture part and extending toward the second surface.
G01J 3/26 - Production du spectre; Monochromateurs en utilisant une réflexion multiple, p.ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
Disclosed is a laser device including: a laser light source configured to emit laser light; a phase control unit configured to receive the laser light emitted from the laser light source, to control a spatial phase of a portion of the laser light, to emit the portion of the light as control light, and to emit another portion of the laser light as non-control light; a first optical system configured to irradiate an object with the control light emitted from the phase control unit; a detector configured to detect the non-control light emitted from the phase control unit; a second optical system configured to cause the non-control light emitted from the phase control unit to converge toward a detection surface of the detector.
H01S 3/00 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G02F 1/133 - Dispositions relatives à la structure; Excitation de cellules à cristaux liquides; Dispositions relatives aux circuits
G02F 1/137 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides caractérisés par l'effet électro-optique ou magnéto-optique, p.ex. transition de phase induite par un champ, effet d'orientation, interaction entre milieu récepteur et matière additive ou diffusion dynamique
56.
LIGHT DETECTOR, RADIATION DETECTOR, AND PET DEVICE
A light detector includes a semiconductor light detection element having a plurality of light detection units disposed two-dimensionally and readout wirings and a plurality of metalenses disposed on a surface of the semiconductor light detection element. Each of the plurality of light detection units has an avalanche photodiode including a first semiconductor region and a second semiconductor region forming a PN junction with the first semiconductor region, and a quenching resistor including one end electrically connected to the second semiconductor region and another end electrically connected to the readout wiring. The plurality of metalenses are disposed two-dimensionally to overlap the plurality of light detection units, and converge light such that a convergence spot is located at a position which is within the first semiconductor region and which is separated by a predetermined distance from a boundary between the first semiconductor region and the second semiconductor region.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p.ex. sur la position ou la section du faisceau; Mesure de la distribution spatiale de radiations
A transfer part of a photoelectric conversion device includes a first transfer region configured to transfer electric charge along a first line, a second transfer region configured to transfer the electric charge along a second line, a third transfer region configured to transfer the electric charge along a third line, a first transfer electrode, and a second transfer electrode. The third line is deviated from at least one of the first line and the second line. The third transfer region includes a first semiconductor region having a first impurity concentration, and a second semiconductor region having a second impurity concentration higher than the first impurity concentration. The second semiconductor region extends along the third line to be widened on the second transfer region side. The first semiconductor region is disposed on both sides of the second semiconductor region.
An optical module includes: a mirror unit; and a magnet unit including first, second, and third magnets arranged along a first direction. The mirror unit is disposed on the magnet unit in a second direction perpendicular to the first direction. A width of the first magnet is equal to or more than widths of the second and third magnets. An upper surface of the first magnet is located on a mirror unit side with respect to upper surfaces of the second and third magnets in the second direction, or is located at the same position as one of the upper surfaces of the second and third magnets and on the mirror unit side with respect to the other of the upper surfaces of the second and third magnets in the second direction. The mirror unit is fixed to at least the upper surface of the first magnet.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
In a semiconductor laser device, a supply path that guides a cooling fluid supplied from a supply port side, toward a disposition region, spray holes that spray the cooling fluid guided by the supply path, from below the disposition region, and a discharge path that guides the cooling fluid sprayed from the spray holes, toward a discharge port are provided within a body portion of a heat sink. The spray holes are disposed along a resonance direction of a semiconductor laser element disposed in the disposition region, and the discharge path extends in a direction intersecting with the resonance direction of the semiconductor laser element disposed in the disposition region.
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/02315 - Supports; Boîtiers Éléments de montage, p.ex. embases Éléments de support, p.ex. bases ou montures
An optical module includes: a mirror unit including a mirror device including a movable mirror portion provided with a coil; and a magnet unit including a first magnet, a second magnet, and a third magnet arranged along a first direction, and generating a magnetic field acting on the movable mirror portion. The mirror unit is disposed on the magnet unit in a second direction perpendicular to the first direction, and has a bottom surface facing the magnet unit. A protrusion portion protruding to a magnet unit side is formed on the bottom surface. A width of the protrusion portion in the first direction is equal to or less than a width of the first magnet in the first direction. The mirror unit is fixed to an upper surface of the first magnet at the protrusion portion.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
62.
RADIATION DETECTOR, RADIATION DETECTOR MANUFACTURING METHOD, AND SCINTILLATOR PANEL UNIT
A radiation detector includes a sensor panel having a light receiving surface, a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface, and a moisture-proof layer. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. The moisture-proof layer is provided continuous over the first scintillator panel and the second scintillator panel.
A metasurface element includes a support body and a metasurface formed on a surface of the support body. The metasurface includes a metal pattern that is disposed to emit an electron in response to incidence of an electromagnetic wave, and a metal layer that contains an alkali metal and is formed on the metal pattern. The metal layer extends beyond the metal pattern to reach a region on the surface of the support body, the region being not formed with the metal pattern.
A light detection device includes: a Fabry-Perot interference filter provided with a light transmission region; a light detector configured to detect light transmitted through the light transmission region; a package having an opening and accommodating the Fabry-Perot interference filter and the light detector; and a light transmitting unit arranged on an inner surface of the package so as to close an opening, the light transmitting unit including a band pass filter configured to transmit light incident on the light transmission region. When viewed from a direction parallel to the line, an outer edge of the Fabry-Perot interference filter is positioned outside an outer edge of the opening, and an outer edge of the light transmitting unit is positioned outside the outer edge of the Fabry-Perot interference filter.
G01J 3/26 - Production du spectre; Monochromateurs en utilisant une réflexion multiple, p.ex. interféromètre de Fabry-Perot, filtre à interférences variables
G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
G01J 5/20 - Pyrométrie des radiations, p.ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des éléments résistants, thermorésistants ou semi-conducteurs sensibles aux radiations, p.ex. des dispositifs photoconducteurs
G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
An inspection apparatus includes a light source that emits light, an optical amplifier that amplifies input light and outputs the amplified light, an optical system (an objective lens, an imaging optical system, and a scanning optical system) that irradiates a semiconductor device with the light from the light source and guides light from the semiconductor device to the optical amplifier, and a photodetector that detects the light output from the optical amplifier, and the optical amplifier amplifies the input light so that saturation does not occur.
A method for manufacturing a mirror device is a method for manufacturing a mirror device including a structural body that includes a support portion, a movable portion, and a coupling portion, and a mirror layer provided on the movable portion. The method for manufacturing a mirror device includes: a first forming step of forming a plurality of parts on a wafer, each of the plurality of parts corresponding to the structural body; a second forming step of forming the mirror layer on a part of each of the plurality of parts, the part corresponding to the movable portion; a heating step of heating the part of each of the plurality of parts, corresponding to the movable portion, after the first forming step and the second forming step; and a cutting step of cutting the wafer to separate the plurality of parts from one another, after the heating step.
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81C 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
A dispersion measurement apparatus includes a pulse forming unit, a correlation optical system, a photodetection unit, and an operation unit. The pulse forming unit forms a light pulse train including a plurality of light pulses having time differences and center wavelengths different from each other from a measurement target light pulse output from a pulsed laser light source. The correlation optical system receives the light pulse train output from the pulse forming unit and outputs correlation light including a cross-correlation or an autocorrelation of the light pulse train. The photodetection unit detects a temporal waveform of the correlation light output from the correlation optical system. The operation unit estimates a wavelength dispersion amount of the pulsed laser light source based on a feature value of the temporal waveform of the correlation light.
G01J 3/453 - Spectrométrie par interférence par corrélation des amplitudes
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
G01M 11/00 - Test des appareils optiques; Test des structures ou des ouvrages par des méthodes optiques, non prévu ailleurs
H01S 3/00 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
An X-ray generation device includes an electron gun emitting an electron beam, an X-ray generation target including a plurality of target parts generating X-rays in response to incidence of the electron beam from the electron gun, and an irradiation area switching unit switching an area of the X-ray generation target irradiated with the electron beam between a first irradiation area and a second irradiation area. The number of target parts included in the first irradiation area is larger than the number of target parts included in the second irradiation area. An area of the target parts included in the first irradiation area is larger than an area of the target parts included in the second irradiation area.
H01J 35/14 - Dispositifs de concentration, de focalisation ou d'orientation du rayon cathodique
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
A light source unit includes a plurality of light sources emitting light for irradiating an object, and a holding portion holding the plurality of light sources having an insertion hole for an optical fiber inserted therethrough to propagate the light from the object formed therein. The holding portion holds each of the plurality of light sources such that an irradiation region of the light of each of the plurality of light sources is formed on one side of the holding portion. The insertion hole has a first opening that is an opening facing the irradiation region and a second opening that is an opening different from the first opening, and is formed in the holding portion such that one end surface of the optical fiber is exposed from the first opening and faces the irradiation region when the optical fiber is inserted therethrough.
G01N 21/35 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
70.
SPATIAL LIGHT MODULATOR, LIGHT MODULATING DEVICE, AND METHOD FOR DRIVING SPATIAL LIGHT MODULATOR
An SLM includes a modulation unit and a driving circuit. The modulation unit includes a plurality of pixels, and modulates a phase or an intensity of incident light in each pixel according to an amplitude of a drive signal changing periodically with time. The driving circuit provides the drive signal to the modulation unit. The driving circuit performs control such that a phase of the drive signal V1(t) provided to a first pixel group in the plurality of pixels and a phase of the drive signal V2(t) provided to a second pixel group in the plurality of pixels are mutually inverted.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G02F 1/29 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de la position ou de la direction des rayons lumineux, c. à d. déflexion
G03H 1/22 - Procédés ou appareils pour obtenir une image optique à partir d'un hologramme
71.
Adjustment plate for observation device for samples such as cells
A sample support body is used for ionizing a component of a sample. The sample support body includes: a substrate; a porous layer provided on the substrate and having a front surface on a side opposite to the substrate; and a partition portion partitioning the front surface into a first region and a second region. The porous layer includes a main body layer having a plurality of holes opening to the front surface. The partition portion includes a partition groove formed on the front surface so as to pass between the first region and the second region.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including InxGa1-xAs; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion.
An optical module includes a mirror unit, a magnet unit, and a package including a recess accommodating the magnet unit. The magnet unit includes a plurality of magnets arranged along a first direction. The recess includes a base wall portion which extends along the first direction and to which an upper surface of the magnet unit is fixed, and a side wall portion extending along a second direction intersecting the first direction, and facing a side surface of the magnet unit. The recess includes an opening portion that is delimited by the side wall portion and open to a lower side. The mirror unit is disposed on a second surface on an opposite side of the base wall portion from a first surface to which the magnet unit is fixed. The side wall portion protrudes to the lower side with respect to a bottom surface of the magnet unit.
G02B 7/198 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la position du miroir par rapport à son support
An optical module includes a mirror unit, a magnet unit, and a package including a recess. The magnet unit includes a first magnet and a second magnet. The recess includes a base wall portion to which an upper surface of the magnet unit is fixed, and a side wall portion facing a side surface of the magnet unit. The mirror unit is disposed on a second surface on an opposite side of the base wall portion from a first surface to which the magnet unit is fixed. A second upper surface of the second magnet is located closer to the lower side than a first upper surface of the first magnet. The magnet unit is fixed to the base wall portion by an adhesive material disposed at least between the first surface of the base wall portion and the second upper surface of the second magnet.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
An electrodeless laser-driven light source includes a laser that generates a CW sustaining light. A pump laser generates pump light. A Q-switched laser crystal receives the pump light generated by the pump laser and generates pulsed laser light at an output in response to the generated pump light. A first optical element projects the pulsed laser light along a first axis to a breakdown region in a gas-filled bulb comprising an ionizing gas. A second optical element projects the CW sustaining light along a second axis to a CW plasma region in the gas-filled bulb comprising the ionizing gas. A detector detects plasma light generated by a CW plasma and generates a detection signal at an output. A controller generates control signals that control the pump light to the Q-switched laser crystal so as to extinguish the pulsed laser light within a time delay after the detection signal exceeds a threshold level.
H01J 61/16 - Emploi de substances spécifiées pour l'atmosphère gazeuse; Spécification de la pression ou de la température de fonctionnement comprenant de l'hélium, de l'argon, du néon, du crypton ou du xénon en qualité d'élément constitutif principal
H01J 65/04 - Lampes à atmosphère gazeuse portée à la luminescence par un champ électromagnétique extérieur ou par une radiation corpusculaire extérieure, p.ex. lampe indicatrice
An X-ray detection device includes a capillary, an X-ray detection element, and a detection circuit. The capillary has a plurality of X-ray passing regions. The X-ray detection element has a conversion portion and a plurality of pixel electrode portions. The conversion portion faces the capillary and absorbs X-rays to generate carriers. The detection circuit detects carriers collected from the conversion portion through the plurality of pixel electrode portions. When a plurality of carriers generated by incidence of an X-ray are dispersed and collected in two or more of the pixel electrode portions, the detection circuit determines one of the pixel electrode portions corresponding to an X-ray incidence position and corrects and evaluates an amount of carriers in the one of the pixel electrode portions or ignores the incidence of the X-ray.
An X-ray generation target includes a plurality of long target parts generating X-rays in response to incidence of an electron beam and a target part holder in which the plurality of target parts are buried to be parallel to each other. The target part holder includes a mark part indicating an arrangement state of the target parts.
National University Corporation Tokai National Higher Education and Research System (Japon)
Inventeur(s)
Kawaguchi, Daisuke
Tanaka, Atsushi
Yui, Toshiki
Aratani, Tomomi
Abrégé
A laser processing method includes: a forming step of forming a plurality of modified spots along an imaginary plane inside a work piece by irradiating an inside of the work piece with laser light from a surface. The work piece includes a first region and second region when viewed in a direction perpendicular to the surface. In the forming step, a plurality of modified spot rows formed of the plurality of modified spots arranged along a boundary between the first region and the second region are formed in the second region, the plurality of modified spot rows being arranged along a direction intersecting an arrangement direction of the plurality of modified spots, and a crack extending from the second region to the first region is formed by forming the plurality of modified spot rows.
B23K 26/364 - Gravure au laser pour faire une rainure ou une saignée, p.ex. pour tracer une rainure d'amorce de rupture
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p.ex. des rayons laser
80.
SAMPLE SUPPORT, IONIZATION METHOD, AND MASS SPECTROMETRY METHOD
A sample support body includes a substrate and a porous layer provided on the substrate and having a surface opposite the substrate. The porous layer includes a body layer having a plurality of holes open to a surface of the porous layer. Each of the plurality of holes includes an extension portion extending in a thickness direction of the substrate and an opening widened from an end of the extension portion on a surface side toward the surface. An average value of the depths of the plurality of holes is 3 μm or more and 100 μm or less. A value obtained by dividing the average value of the depths by an average value of the widths of the plurality of holes is 9 or more and 2500 or less.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
81.
RADIATION DETECTOR, DETECTOR MODULE, AND RADIATION DETECTOR PRODUCTION METHOD
The present disclosure relates to a radiation detector that is capable of preventing deterioration in an SN ratio of a read-out signal. The radiation detector includes a TlBr crystalline body, and a first electrode and a second electrode that have been provided on respective electrode formation surfaces. At least one of the first electrode and the second electrode includes a first layer and a second layer. The first layer formed on the electrode formation surface contains metallic thallium, or a first alloy of metallic thallium and another metal. The second layer on the first layer contains an alloy of a first metal and a second metal. A diffusion coefficient of metallic thallium to a layer comprised of the alloy of the first metal and the second metal is smaller than a diffusion coefficient of metallic thallium to a layer comprised of the second metal.
An imaging unit includes: a first sensor module; a second sensor module; a processing substrate; a first connection member; and a second connection member. The first sensor module includes a first lens and a first sensor. The second sensor module includes a second lens and a second sensor. The processing substrate executes image processing based on the first image signal and the second image signal. The first connection member electrically connects the first sensor module and the processing substrate, and has flexibility. The second connection member electrically connects the second sensor module and the processing substrate, and has flexibility.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
A light emitting diode element includes: a first element portion including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first active layer; and a second element portion including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second active layer. The first and second element portions are electrically connected to each other by a tunnel junction portion. When the first conductivity type is n-type, the first element portion includes an electron barrier layer arranged between the first active layer and the tunnel junction portion. When the first conductivity type is p-type, the second element portion includes an electron barrier layer arranged between the second active layer and the tunnel junction portion. The electron barrier layer includes AlGaAsSb or AlInAsSb.
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/30 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique
84.
HEATSINK, ACTIVE ENERGY IRRADIATION DEVICE, AND ACTIVE ENERGY IRRADIATION SYSTEM
A heatsink includes: a base plate thermally connected to a heat-generating unit; a plurality of heat radiation fins erected on a surface of the base plate, and arranged with gaps in a first direction along the surface; and a partition member provided to intersect the plurality of heat radiation fins, and partitioning the plurality of heat radiation fins in a second direction along the surface and intersecting the first direction. The partition member partitions the plurality of heat radiation fins such that more air passes through in the second direction between the plurality of heat radiation fins on a base plate side than on a side opposite to the base plate side.
F21V 29/83 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p.ex. puits thermiques les éléments comportant des ouvertures, des conduits ou des canaux, p.ex. des trous de rayonnement thermique
F21V 29/76 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p.ex. puits thermiques avec ailettes ou lames avec ailettes ou lames en plans parallèles essentiellement identiques, p.ex. avec une section en forme de peigne
F21V 29/71 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p.ex. puits thermiques utilisant une combinaison d’éléments séparés interconnectés par des moyens thermo-conducteurs, p.ex. tubes caloporteurs ou barres thermiquement conductrices pour conduire la chaleur entre des éléments séparés de puits thermique
F21V 29/60 - Dispositions de refroidissement caractérisées par l’utilisation d’un écoulement forcé de gaz, p.ex.de l’air
Provided is an optical sensor including: a charge generation region that generates charges in response to incident light; a charge collection region to which charges generated in the charge generation region are transferred; and at least one transfer gate electrode disposed on a transfer region between the charge generation region and the charge collection region. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication, and a gradient potential energy formation region that forms gradient potential energy that is gradient so that potential energy becomes lower as approaching the transfer region in the charge generation region.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
An iterative Fourier transform unit of a modulation pattern calculation apparatus performs a Fourier transform on a waveform function including an intensity spectrum function and a phase spectrum function, performs a replacement of a temporal intensity waveform function based on a desired waveform after the Fourier transform, and then performs an inverse Fourier transform. The iterative Fourier transform unit performs the replacement using a result of multiplying a function representing the desired waveform by a coefficient. The coefficient has a value with which a difference between the function after the multiplication of the coefficient and the temporal intensity waveform function after the Fourier transform is smaller than a difference before the multiplication, and a ratio of the difference is smaller when an intensity is higher at each time of the function before the multiplication.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G06F 17/14 - Transformations de Fourier, de Walsh ou transformations d'espace analogues
A spectroscopic module includes M beam splitters that are arranged along an X direction, where M is a natural number of 2 or more; M bandpass filters disposed on one side in a Z direction with respect to the M beam splitters, each of the M bandpass filters facing each of the M beam splitters; a light detector disposed on the one side in the Z direction with respect to the M bandpass filters and includes M light receiving regions, each of the M light receiving regions facing each of the M bandpass filters; a first support body supporting the M beam splitters; and a second support body supporting the M bandpass filters. Each of N beam splitters among the M beam splitters has a plate shape and has a thickness of 1 mm or less, where N is a natural number of 2 to M.
A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.
An actuator device includes a support part, a movable part, a connecting part, a spiral coil provided to the movable part, a magnetic field generator, an external terminal provided to the support part; and a wiring connected to an inner end portion of the coil and the external terminal. The wiring includes a lead wiring connected to the external terminal, and a straddle wiring formed in a shape of a layer, provided to the movable part so as to straddle the coil, and connected to the inner end portion of the coil and the lead wiring. A thickness of the straddle wiring is smaller than a thickness of the coil. The straddle wiring is electrically insulated from the mirror surface.
H02K 33/02 - Moteurs avec un aimant, un induit ou un système de bobines à mouvement alternatif, oscillant ou vibrant avec des induits entraînés dans un sens par application d'énergie à un système à une seule bobine et ramenés par une force d'origine mécanique, p.ex. par des ressorts
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A QCL module according to an embodiment includes a package accommodating a QCL element and provided with a window material for extracting a laser beam emitted from the QCL element to the outside, a lens hold member for holding a lens on which the laser beam output from the window material is incident, a cooling fan for cooling the package, and a base for holding the package, the lens hold member, and the cooling fan. The package and the lens hold member are fastened together to the base by a common screw member.
H01S 5/02325 - Composants intégrés mécaniquement aux éléments de montage ou aux micro-bancs optiques
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p.ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
Disclosed is an optical kit for forming an optical system including an external resonator of a laser light source that outputs laser light, the optical kit including: a base including a main surface; a light source holding part provided on the main surface for holding the laser light source; and a holding part provided on the main surface for holding the optical system, wherein the holding part has a reflector holding part for holding the corner reflector, a first opening member holding part for holding the first opening member, and a second opening member holding part for holding the second opening member, and wherein the first opening member holding part is positioned closer to the reflector holding part than an emission surface of the laser light of the laser light source held by the light source holding part.
A semiconductor laser element of the present disclosure reducing one-dimensional local oscillation includes a substrate, an active layer, and a phase modulation layer. The phase modulation layer includes a base layer and modified refractive index regions two-dimensionally placed on a reference surface. In a virtual square lattice on the reference surface, the gravity center of each modified refractive index region is placed away from the corresponding lattice point, and an angle of a vector connecting the corresponding lattice point to the gravity center is set individually. A lattice spacing and a light emission wavelength of the active layer satisfy a Γ-point oscillation condition. The gravity center of each modified refractive index region is placed such that the absolute value of the Fourier coefficient of an annular or a circular shape obtained by rotating each modified refractive index region with the corresponding lattice point is 0.01 or less.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/11 - Structure ou forme du résonateur optique comprenant une structure de bande photonique interdite
A light modulator includes a base layer made of an insulating material having a transmitting property for object light, a conductive pattern layer made of a conductive material, including a plurality of pattern portions arranged periodically, and formed on the base layer, a modulation layer made of an electro-optic polymer, filling a space between the plurality of pattern portions and formed on the conductive pattern layer, and having a refractive index to be changed by applying an electric field, and a reflection layer formed on the modulation layer and reflecting the object light incident from a lower surface of the base layer and transmitted through the modulation layer, and the object light having a phase modulated by being transmitted through the modulation layer and reflected by the reflection layer is output from the lower surface of the base layer to the outside as modulated light.
G02F 1/065 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des matériaux organiques électro-optiques dans une structure de guide d'ondes optique
G02B 1/00 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques caractérisés par la substance dont ils sont faits; Revêtements optiques pour éléments optiques
94.
AGENT FOR DETECTING INTERACTION BETWEEN TISSUES AND ORGANS
The present invention relates to an agent for detecting an interaction between tissues and organs, the agent containing a compound represented by General Formula (1-0) as an active component.
The present invention relates to an agent for detecting an interaction between tissues and organs, the agent containing a compound represented by General Formula (1-0) as an active component.
The present invention relates to an agent for detecting an interaction between tissues and organs, the agent containing a compound represented by General Formula (1-0) as an active component.
[In General Formula (1-0), R represents —O(CH2)n—, —O(CH2)nOC2H4—, —CH2O(CH2)n—, or —CH2O(CH2)nOC2H4—, n represents an integer of 1 to 5, and Q1 represents F or —OCH3].
A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion including a photoelectric surface disposed inside the housing, an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing, and a conductive layer disposed on a light transmitting portion side of at least a part of the electron capturing portion to face the photoelectric surface inside the housing and configured to allow light to pass therethrough.
H01J 40/10 - Emploi de substances spécifiées comme atmosphère gazeuse
H01J 40/16 - Tubes à décharge photo-électrique n'impliquant pas l'ionisation d'un gaz à cathode photo-émissive, p.ex. cellule photo-électrique alcaline
The laser module includes a QCL element and a light source. The QCL element includes a substrate, a lower clad layer provided on the substrate, an active layer that is provided on an opposite side of the lower clad layer from the substrate and generates a first terahertz wave, an upper clad layer provided on an opposite side of the active layer from the lower clad layer, and a first electrode provided on an opposite side of the upper clad layer from the active layer. The second terahertz wave from the light source enters the active layer through the substrate, is reflected by the first electrode, and is amplified or wavelength-converted. The third terahertz wave amplified or wavelength-converted in the active layer is emitted to the outside through the substrate.
H01S 5/04 - Procédés ou appareils pour l'excitation, p.ex. pompage
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/02 - Lasers à semi-conducteurs - Détails ou composants structurels non essentiels au fonctionnement laser
H01S 5/02253 - Découplage de lumière utilisant des lentilles
The light detector includes a light detection substrate having at least one light receiving region and a light incident surface on which a detection target light is incident, and a meta-lens including a plurality of unit structures arranged in a grid pattern and disposed on the light incident surface to focus the detection target light. When viewed in a thickness direction of the light detection substrate, an opening region in which no unit structure is formed is provided in a region including a center of the meta-lens.
A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
A light detection device of the present invention includes: a wiring board; a first support part disposed on a mounting surface of the wiring board; a Fabry-Perot interference filter having a first mirror part and a second mirror part between which a distance is variable and having an outer edge portion disposed in a first support region of the first support part; a light detector disposed on the mounting surface to face the first mirror part and the second mirror part on one side of the first support part; and a temperature detector disposed on the mounting surface, wherein the temperature detector is disposed on the mounting surface such that at least a part of the temperature detector overlaps a part of the Fabry-Perot interference filter when seen in a first direction perpendicular to the mounting surface and such that at least a part of the temperature detector overlaps a part of the first support part when seen in a second direction in which the first support part and the light detector are aligned with each other, and wherein a first distance between the temperature detector and the first support part in the second direction is smaller than a first width of the first support region in the second direction.
G01J 3/26 - Production du spectre; Monochromateurs en utilisant une réflexion multiple, p.ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
A spectroscopic module includes a plurality of beam splitters that are arranged along an X direction; a plurality of bandpass filters disposed on one side in a Z direction with respect to the plurality of beam splitters facing the plurality of beam splitters, respectively; a light detector disposed on the one side in the Z direction with respect to the plurality of bandpass filters and including a plurality of light receiving regions facing the plurality of bandpass filters, respectively; a first support body supporting the plurality of beam splitters; and a second support body supporting the plurality of bandpass filters. The second support body includes a support portion in which a support surface is formed so as to be open to the one side in the Z direction. The plurality of bandpass filters are disposed on the support surface.
brevets
