An image acquisition device 1 comprises: an illumination device 2 that irradiates a subject S with light from the range of a light irradiation unit 2a; and an imaging device 7 that detects, through an imaging lens 7a, light that has been specularly reflected by the subject S. A straight line that connects the center of the light irradiation unit 2a with a point of intersection between the optical axis of the imaging lens 7a and the subject S is set to be inclined 2-120 degrees with respect to the optical axis. The solid angle of the light irradiation unit 2a as viewed from said point of intersection is set to be 0-0.15 steradians.
An image acquisition device 1 comprises: an illumination device 2 for irradiating an object S with polarized light; an image capture device 7 for detecting light that is the polarized light directly reflected by the object S and acquiring a plurality of pieces of image data on mutually different polarization components of the light; and an image processing device 8 for detecting, on the basis of the plurality of pieces of image data, foreign matter that is present on the object S and through which the polarized light passes.
This image acquisition method includes: a step for repeatedly generating a group of excitation light pulses including a plurality of excitation light pulses; a step for irradiating the target object containing a fluorescent dye with the group of excitation light pulses; a step for detecting the intensity of fluorescence generated at a plurality of locations of the target object by the irradiation with the group of excitation light pulses; and a step for generating a fluorescence image on the basis of the intensity of fluorescence at the plurality of locations of the target object. In the step for generating a group of excitation light pulses, the time interval between the plurality of excitation light pulses is set to be equal to or less than the relaxation time between excited states in the excited triplet state of the fluorescent dye, or shorter than 10 picoseconds.
This solid-state imaging device comprises: first and second light receiving units that each generate a charge in accordance with an incident light; an output unit that is to output a first signal in accordance with the charge occurring in the first light receiving unit and that is to output a second signal in accordance with the charge occurring in the second light receiving unit; and a signal processing unit that is to process the signals outputted from the output unit. The signal processing by the signal processing unit includes: addition signal generation processing that adds the first signal and the second signal together, thereby generating an addition signal; subtraction signal generation processing that subtracts the second signal from the first signal, thereby generating a subtraction signal; and correction processing that corrects, on the basis of the subtraction signal, and outputs the addition signal.
A photodetector (1) comprises: a package (2) having a bottom wall (21) and a window (23) facing each other; a light receiving element (4) disposed on the bottom wall (21) in the package (2); a light transmitting member (7) disposed on the light receiving element (4) in the package (2); and an optical filter member (8) disposed on the light transmitting member (7) in the package (2). The light receiving element (4) has a light receiving area (42) including a plurality of light receiving portions (41). When viewed from the direction in which the bottom wall (21) and the window (23) are facing each other, the outer edge of the light receiving element (4) is located inside the outer edge of the optical filter member (8).
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
An image processing device 1 comprises a processing unit 11 and a training unit 12, and performs noise reduction processing on an image 23 of interest. The processing unit 11 inputs an input image 21 to a CNN and outputs an output image 22 from the CNN. The training unit 12 uses an evaluation function based on the output image 22 and the image 23 of interest to train the CNN on the basis of the value of the evaluation function. The evaluation function includes an error evaluation term that represents an evaluation value related to an error between the output image and the image of interest, and a regularization term that represents an evaluation value related to the difference in pixel value between adjacent pixels in the output image. The image processing device 1 repeats the processing in the processing unit 11 and the processing in the training unit 12 multiple times, and the output image 22 obtained after a certain number of repetitions is taken as a noise-reduced image. Thus, an image processing device and an image processing method are achieved that make it possible to suppress image quality degradation due to CNN overlearning in noise reduction processing using DIP technology.
A61B 5/055 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiques; Mesure utilisant des micro-ondes ou des ondes radio faisant intervenir la résonance magnétique nucléaire [RMN] ou électronique [RME], p.ex. formation d'images par résonance magnétique
An image processing device (10) comprises a sinogram creating unit (11), a CNN processing unit (12), a convolution integration unit (13), a forward projection calculating unit (14), and a CNN training unit (15). The forward projection calculating unit (14) subjects an output image (23) to a forward projection calculation to create a calculated sinogram (24). The CNN training unit (15) uses an evaluation function including an error evaluation term representing an evaluation value relating to an error between an actual measured sinogram (21) and the calculated sinogram (24), and a regularization term representing an evaluation value relating to a difference in pixel values between adjacent pixels in the output image, to train a CNN on the basis of the values of the evaluation function. As a result, the present invention achieves an image processing device with which it is possible to obtain a tomographic image having reduced noise, by suppressing a deterioration in image quality resulting from CNN overfitting in noise reduction processing employing a DIP technique, when the CNN is trained on the basis of evaluation results of differences between the calculated sinogram and the actual measured sinogram to create a tomographic image of a subject.
This intraoral image capturing device comprises: a radiation detection unit that detects radiation; a first substrate that has provided thereto a communication element capable of conducting wireless communication with the outside; a second substrate that is provided with a battery and is disposed on the side opposite to the radiation detection unit across the first substrate; a connection member by which the second substrate is connected to the first substrate; and a housing in which the radiation detection unit, the first substrate, the second substrate, and the connection member are accommodated. When viewed in the Z direction, the entirety of the outer edge of the second substrate is positioned on the inner side of the outer edge of the first substrate.
This light modulation device comprises a light source, a control unit, and a spatial light modulator. The light source outputs a laser beam having strength corresponding to set strength. The spatial light modulator includes a plurality of pixel electrodes, a liquid crystal layer, a driving unit, and a cooling unit. The liquid crystal layer modulates a phase of the laser beam according to the size of an electric field formed by each of the plurality of pixel electrodes. The driving unit applies a voltage to the plurality of pixel electrodes. The cooling unit cools the liquid crystal layer such that the temperature of the liquid crystal layer approaches a set temperature. The control unit determines the set temperature of the cooling unit on the basis of the set strength of the laser beam.
G02F 1/133 - Dispositions relatives à la structure; Excitation de cellules à cristaux liquides; Dispositions relatives aux circuits
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
10.
LASER PROCESSING DEVICE, AND LASER PROCESSING METHOD
This laser processing device comprises a support unit for supporting a target object, a light source for emitting laser light, a spatial optical modulator for modulating the laser light by displaying a modulation pattern, a condensing unit for condensing the laser light onto the target object, a drive unit for driving at least one of the support unit and the condensing unit, and a control unit. The control unit causes the spatial optical modulator to display a modulation pattern that includes a trefoil aberration pattern such that a beam shape of the laser light at a focal spot includes a central portion and a first extended portion, a second extended portion and a third extended portion that extend in a radial pattern from the central portion, and such that the highest intensity in the beam shape central is in the central portion. The control unit causes the drive unit to drive the at least one of the support unit and the condensing unit such that the focal spot moves relatively along a line.
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
B23K 26/073 - Détermination de la configuration du spot laser
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p.ex. pour faire des fissures d'amorce de rupture
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
An analyzing unit of this spectrometry device uses a first correction factor to correct a first electrical signal such that a linearity characteristic of a first amplifier matches a reference linearity characteristic. The analyzing unit uses a second correction factor to correct a second electrical signal such that a linearity characteristic of a second amplifier matches the reference linearity characteristic. The analyzing unit generates first spectrum data on the basis of the corrected first electrical signal, and generates second spectrum data on the basis of the corrected second electrical signal. The analyzing unit generates spectrum data of light to be measured, on the basis of the first spectrum data and the second spectrum data.
This semiconductor light emitting device comprises: a plurality of iPM lasers that each have a first surface and a second surface opposite the first surface, and that output light from the first surface; and a drive circuit that supplies a drive current for causing each of the plurality of iPM lasers to emit light. The drive circuit includes: a common current source circuit for the plurality of iPM lasers; a plurality of switch portions respectively provided to correspond to the plurality of iPM lasers to switch on/off of the drive current; and a switch operation portion that causes each of the plurality of switch portions to operate separately.
H01S 5/026 - Composants intégrés monolithiques, p.ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/185 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p.ex. lasers à émission de surface à cavité horizontale [HCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
An output window unit which comprises a window foil that allows an electron beam to pass therethrough toward the outside of a housing and a support member fixed to the housing and supporting the window foil, wherein the support member comprises: a mesh-shaped portion facing the window foil and having a plurality of through-holes through which the electron beam from an electron source passes toward the window foil; a solid frame portion integrally formed with the mesh-shaped portion so as to surround the mesh-shaped portion when viewed from a first direction, which is the facing direction of the window foil and the mesh-shaped portion; and an outer portion which is located outside both the mesh-shaped portion and the frame portion when viewed from the first direction and which has been integrally formed with the mesh-shaped portion and the frame portion. The support member has a recess formed therein so as to extend along the first direction.
This light irradiation apparatus comprises: a light source which emits light; a light pipe which receives light emitted from the light source and which uniformizes illuminance distribution of said light and outputs the resulting light; a diffuser plate which diffuses light outputted from the light pipe; and a light pipe which receives light diffused by the diffuser plate and which uniformizes illuminance distribution of said light and outputs the resulting light. In other words, the light irradiation apparatus comprises two light pipes and a diffuser plate interposed between said two light pipes.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
15.
LIGHT IRRADIATION DEVICE, MEASUREMENT DEVICE, OBSERVATION DEVICE, AND FILM THICKNESS MEASUREMENT DEVICE
This light irradiation device comprises: a light source which emits light; a light pipe into which light emitted from the light source enters and which uniformizes the luminance distribution of the light and outputs the light; a diffusing part which diffuses the light output from the light pipe; and a light pipe into which the light diffused by the diffusion part enters and which uniformizes the luminance distribution of the light and outputs the light, wherein the diffusing part is a light diffusing surface provided on a light output surface of the light pipe.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
16.
IMAGE ACQUISITION DEVICE AND IMAGE ACQUISITION METHOD
An image acquisition device 1A comprises a measurement unit 10 and a processing unit 20. For each coincidence counting event in which a first detector 11 and a second detector 12 have performed coincidence counting of a pair of gamma-ray photons generated by a pair annihilation event of electrons and positrons at a positron emission nuclide 81, the processing unit 20 determines a position at which gamma-ray photons exhibited Compton scattering in a subject 90 on the basis of detection positions and detection times of the gamma-ray photons detected by the first detector 11 and the second detector 12 as well as the position of the positron emission nuclide 81 on the assumption that gamma-ray photons arrived at one of the first detector 11 or the second detector 12 without exhibiting Compton scattering in the subject 90 and that gamma-ray photons arrived at the other after exhibiting Compton scattering in the subject 90. As a result, an image acquisition device and an image acquisition method are achieved, said device and method being capable of acquiring a tomographic image representing anatomical information pertaining to the subject without performing image reconstruction processing.
A distance measurement device 1 comprises a light source 2, a light reception unit 5, a control unit 6 and a processing unit 7. The light reception unit 5 includes a photodiode and a charge storage unit that stores a charge which has been generated in the photodiode. The control unit 6 provides, to the light reception unit 5, a control pattern including M frames which instruct whether or not to store the charge in the charge storage unit in each of N periods that are divided with a fixed time T, from the light pulse output timing of the light source 2. When the control pattern is represented by a matrix of M rows and N columns, and the value of an element in the m-th row and the n-th column of this matrix is set to 1 at the time when charge storage is instructed in the n-th period in the m-th frame and the value is set to 0 at the time when non-storage is instructed, all combinations of adjacent two column vectors among N column vectors constituting the matrix satisfy a condition such as the condition that the Hamming distance therebetween is 1. This achieves a device that can reliably carry out distance measurement by the TOF method using a compressed sensing technique.
Disclosed are a highly rigid peptide linker inserted between a transmembrane protein and an organelle transport signal, a fusion protein containing the same, and a localization method that includes inserting a peptide linker.
A61K 38/17 - Peptides ayant plus de 20 amino-acides; Gastrines; Somatostatines; Mélanotropines; Leurs dérivés provenant d'humains
A61K 48/00 - Préparations médicinales contenant du matériel génétique qui est introduit dans des cellules du corps vivant pour traiter des maladies génétiques; Thérapie génique
A61P 43/00 - Médicaments pour des utilisations spécifiques, non prévus dans les groupes
C07K 2/00 - Peptides à nombre indéterminé d'amino-acides; Leurs dérivés
C12N 15/63 - Introduction de matériel génétique étranger utilisant des vecteurs; Vecteurs; Utilisation d'hôtes pour ceux-ci; Régulation de l'expression
19.
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
This laser processing device comprises: a support unit that supports a wafer; a light source; a spatial optical modulator; a light collecting unit; a moving unit that moves the light collecting unit in an optical axis direction perpendicular to the surface thereof, relative to the surface; a visible image capturing unit that acquires a captured image by detecting light that has propagated in the wafer through the light collecting unit; and a control unit. The control unit is configured to perform: a first process for controlling the moving unit; a second process for controlling a light source 3 so as to emit laser light continuously; a third process for controlling the visible image capturing unit so that the light reflected on the back surface of the wafer can be detected to acquire a plurality of captured images continuously; and a fourth process for composing the plurality of captured images to thereby acquire an optical axis profile which is a profile image of the laser light along the optical axis direction.
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
B23K 26/00 - Travail par rayon laser, p.ex. soudage, découpage ou perçage
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
This light detection device comprises: a package having an opening; a light transmission section that blocks the opening and has a light-emitting surface located inside the package; a Fabry-Perot interference filter that includes a pair of mirror sections, the distance between the mirror sections being variable; a light detector; and a first aperture section having a first aperture located, inside the package, between the light-emission surface and the Fabry-Perot interference filter. The first aperture section includes a first surrounding part that surrounds the first aperture. The Fabry-Perot interference filter-side surface of the first surrounding part is separated from the Fabry-Perot interference filter, and absorbs light.
G01J 3/26 - Production du spectre; Monochromateurs en utilisant une réflexion multiple, p.ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 3/02 - Spectrométrie; Spectrophotométrie; Monochromateurs; Mesure de la couleur - Parties constitutives
21.
METHOD FOR DETERMINING REGION OF CELL THAT HAS UNDERGONE PROGRAMMED CELL DEATH, DEVICE COMPRISING DETERMINATION UNIT, AND INFORMATION PROCESSING PROGRAM INCLUDING DETERMINATION STEP
Disclosed are a method, a device, and an information processing program for determining, by using refractive index distribution data pertaining to an object to be observed, the region of a cell that has undergone programmed cell death in the object to be observed.
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
C12M 1/34 - Mesure ou test par des moyens de mesure ou de détection des conditions du milieu, p.ex. par des compteurs de colonies
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
G01N 21/45 - Réfringence; Propriétés liées à la phase, p.ex. longueur du chemin optique en utilisant les méthodes de Schlieren
G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique
22.
METHOD, DEVICE, AND INFORMATION PROCESSING PROGRAM FOR DETERMINING NECROSIS CELL REGION
Disclosed are a method, device, and information processing program for determining a necrosis cell region in an object to be observed, using refractive-index distribution data pertaining to the object to be observed.
C12Q 1/04 - Détermination de la présence ou du type de micro-organisme; Emploi de milieux sélectifs pour tester des antibiotiques ou des bactéricides; Compositions à cet effet contenant un indicateur chimique
G01N 21/45 - Réfringence; Propriétés liées à la phase, p.ex. longueur du chemin optique en utilisant les méthodes de Schlieren
C12M 1/34 - Mesure ou test par des moyens de mesure ou de détection des conditions du milieu, p.ex. par des compteurs de colonies
23.
METHOD, DEVICE, AND PROGRAM FOR IDENTIFYING OR EVALUATING BILE CANALICULUS REGIONS
Disclosed are: a method for identifying, by using refractive index distribution data of an observation object containing liver cells, bile canaliculus regions included in the observation object; and a method for evaluating the bile canaliculus regions on the basis of bile canaliculus parameters obtained from the refractive index distribution data of the observation object containing the liver cells.
G01N 21/41 - Réfringence; Propriétés liées à la phase, p.ex. longueur du chemin optique
C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
This semiconductor laser device comprises: a semiconductor laser element having a plurality of mesa sections; and a submount having recesses in which the plurality of mesa sections are disposed. The recesses each have a wiring section provided therein. An electrode corresponding to each mesa section is electrically connected to the wiring section via a solder member. The wiring section includes first wiring and second wiring that are mutually adjacent and mutually electrically isolated. A first reference surface of the semiconductor laser element is in planar contact with a second reference surface of the submount. The distance from a first base section of a first mesa section corresponding to the first wiring to a second base section of a second mesa section corresponding to the second wiring is greater than the length of a contact region of the mesa sections.
The present invention provides a semiconductor laser device comprising: a semiconductor laser element including a plurality of mesa portions; and a submount including a plurality of recesses where the plurality of mesa portions are arranged. An electrode corresponding to each of the plurality of mesa portions is electrically connected to a wiring section via a solder member. A first reference surface of the semiconductor laser element is in surface-contact with a second reference surface of the submount. A wall section including the second reference surface is provided between adjacent recesses. When viewed in the Y-axis direction, the distance in the X-axis direction between a side surface of the recess and an opposing side surface of the mesa portion decreases along the Z axis direction from the top surface to the base end of the mesa portion.
This radiation detector comprises a plurality of pixel circuits which are provided corresponding to a plurality of pixels arranged along a predetermined direction, and which each have at least one detection system for reading carriers from the corresponding pixel. The at least one detection system has a counter that counts the number of radiation hits, a first register that holds first data that is a count value from the counter, a second register that holds second data, an adder that generates third data by adding the first data and the second data, and a third register that holds third data. In each of the plurality of pixel circuits, the second data is third data transferred from the third register of the corresponding pixel circuit for a pixel that is adjacent to the corresponding pixel of the pixel circuit.
An x-ray tube according to the present invention comprises a housing, an electron gun that emits an electron beam inside the housing, and a target that is struck by the electron beam inside the housing and thereby generates x-rays. The electron gun has a cathode that discharges electrons and a focusing electrode that focuses the electrons onto the target as an electron beam. The focusing electrode is a cylinder that has an inside surface and an outside surface. The inside surface includes a first area and a second area that is on the target side of the first area. The average roughness of the second area is less than the average roughness of the first area.
This infrared detector comprises: a package having a base part, first to third lead pins, and a cap part; and a plurality of thermopile chips disposed on a main surface of the base part. First and second thermopile chips are electrically connected in series. A first chip unit, which includes the first and second thermopile chips, and a second chip unit, which includes a third thermopile chip, are electrically connected in parallel. The first and second lead pins are disposed as aligned along a second direction with a first straight line therebetween. The first and third lead pins are disposed as aligned along a first direction with a second straight line therebetween. The first thermopile chip is disposed on the second straight line and disposed on a straight line linking the first and third lead pins. The second and third thermopile chips are disposed on the first straight line so as to be aligned with a reference position therebetween.
A spectroscopic analysis device according to the present invention comprises a support part that supports a sample so as to include a prescribed support area, a light source that emits terahertz waves of a prescribed frequency range, a first off-axis parabolic mirror that collimates the terahertz waves, a first lens that focuses the terahertz waves onto the support area, and a light detector that detects the terahertz waves radiated at the sample. The light source has a quantum cascade laser element and a mobile diffraction grating. The distance from the light source to the support area via the first off-axis parabolic mirror and the first lens is 10–200 mm. The effective diameter of the first lens is 5–80 mm. The outside diameter of the support area is 0.5–3.5 mm.
G01N 21/3581 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz
x1-x1-xAs; optical waveguide layers (21, 22) of the first conductivity type, the optical waveguide layers being provided between the substrate (10) and the light-absorbing layer (23); and a first semiconductor layer (24) of a second conductivity type that differs from the first conductivity type, the first semiconductor layer (24) being positioned on the opposite side from the substrate (10) relative to the light-absorbing layer (23) and being joined to the light-absorbing layer (23). The In composition x in the light-absorbing layer (23) is at least 0.55, the thickness of the light-absorbing layer (23) is 1.8 µm or less, the semiconductor light-receiving element is of a side surface-entry type in which the light enters from the side surface (20s), and light that enters from the side surface (20s) reaches the light-absorbing layer (23) via the optical waveguide layers (21, 22).
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
x 1 - x1 - xAs; a first conductivity-type buffer layer (30) provided between the substrate (10) and the light absorption layer (24); and a second region (27) that is of a second conductivity type differing from the first conductivity type, that is positioned on the side of the light absorption layer (24) opposite the substrate (10), and that is joined to the light absorption layer (24).The In composition x of the light absorption layer (24) is 0.55 or greater, and the thickness of the light absorption layer (24) is 0.6 μm to 1.8 μm, inclusive. The semiconductor light-receiving element is of a rear-incident type in which incident light is received from the substrate (10) side towards the semiconductor laminate section (20), or of a front-incident type in which incident light is received from the side opposite to the substrate towards the semiconductor laminate section.
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
This radiation detector comprises: an optical semiconductor element having a plurality of light-receiving regions; a scintillator unit disposed on the optical semiconductor element; and an adhesive layer disposed between the optical semiconductor element and the scintillator unit. The scintillator unit has at least one scintillator corresponding to the plurality of light-receiving regions. Each of the plurality of light-receiving regions has a plurality of light-receiving parts connected to each other in parallel. Each of the plurality of light-receiving parts comprises: an avalanche photodiode that operates in a Geiger mode; and a quenching resistor that is connected in series to the avalanche photodiode. The distance between adjacent light-receiving regions is greater than the distance between the light-receiving regions and the scintillator which face each other.
H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
33.
IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
An image processing device (1) comprises an input image creating unit (10), a first computing unit (20), and a second computing unit (30), and reduces noise in a target image (52) to create a noise-reduced image. The first computing unit (20) includes a first CNN processing unit (21) and a first CNN learning unit (22), and performs supervised pre-learning processing. A first input image (40) is an image in which pixel values in some regions have been changed on the basis of a teacher image (42). The second calculating unit (30) includes a second CNN processing unit (31) and a second CNN learning unit (32), and performs unsupervised learning processing. As a result, an image processing device is achieved that can easily reduce noise in a target image, by subjecting a CNN to supervised pre-learning followed by unsupervised learning.
Provided is a semiconductor light receiving element (1) which comprises a substrate (10), a semiconductor multilayer part (20) that is formed on the substrate (10), and a first electrode (40) and a second electrode (50) that are electrically connected to the semiconductor multilayer part (20), wherein: the semiconductor multilayer part (20) comprises a light absorption layer (24) that contains InGaAs and comprises a first region (24a) of a first conductivity type, a first semiconductor layer (S1) that is positioned between the substrate (10) and the light absorption layer (24), a second semiconductor layer (S2) that is positioned on the reverse side of the substrate (10) with respect to the light absorption layer (24), and a capacity reduction layer (23) of the first conductivity type, the capacity reduction layer (23) being formed of one of InP, InGaAsP, InAsP and AlInGaAs, while being positioned between the light absorption layer (24) and one of the first semiconductor layer (S1) and the second semiconductor layer (S2); the carrier concentration of the capacity reduction layer (23) is not higher than 5 × 1015cm-3 but higher than the carrier concentration in the first region (24a) of the light absorption layer (24); and the band gap of the capacity reduction layer (23) is wider than the band gap of the light absorption layer (24).
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
x1-x1-xAs; the buffer layer is provided between the substrate and the optical absorption layer (23); the first semiconductor layer (24, 25) is positioned on the side opposite to the substrate with reference to the optical absorption layer (23) and is joined to the optical absorption layer (23); the In composition x in the optical absorption layer (23) is 0.55 or more; the thickness of the optical absorption layer (23) is 1.8 μm or less; the semiconductor light-receiving element (1) employs a side surface incident type in which the side surface (20s) receives incident light; and the width, along the incident direction of the light relative to the side surface (20s), of the optical absorption layer (23) is 10 μm or less.
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
36.
OPTICAL DETECTOR AND SPECTROSCOPIC MEASUREMENT DEVICE
This optical detector detects a primary light ray among light rays to be measured that are spectrally separated in an X-axis direction. The optical detector comprises a package with an opening, a window portion that covers the opening and allows the primary light ray to pass therethrough, and an optical detection element positioned inside the package, having a light-receiving region opposing the window portion, and detecting the primary light ray. The light-receiving region includes a plurality of optical detection channels arranged in the X-axis direction. The window portion includes an optical transmission member having a light incident surface and a light exit surface, and a linear variable filter coating that is formed on one of the light incident surface and the light exit surface, and has a transmission wavelength changing along the X-axis direction.
G01J 3/18 - Production du spectre; Monochromateurs en utilisant des éléments diffractants, p.ex. réseaux
G01J 3/36 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
37.
IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
1Kkkk and is subjected to CNN learning based on the error evaluation result of each of the K-number of blocks. Accordingly, realized is an image processing device that can perform three-dimensional forward projection calculation from CNN output images to calculated sinograms and that can easily create a three-dimensional tomographic image of a subject by performing CNN learning on the basis of evaluation results of errors between calculated sinograms and actual measurement sinograms.
A61B 5/055 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiques; Mesure utilisant des micro-ondes ou des ondes radio faisant intervenir la résonance magnétique nucléaire [RMN] ou électronique [RME], p.ex. formation d'images par résonance magnétique
38.
SPECTROSCOPY DEVICE, RAMAN SPECTROSCOPIC MEASUREMENT DEVICE, AND SPECTROSCOPY METHOD
This spectroscopy device 5 receives light L1, on which wavelength resolution in a prescribed direction has been performed by a spectroscopy optical system 4 including a spectroscopy element, and outputs spectroscopic spectrum data for the light L1, the spectroscopy device 5 comprising: a pixel unit 11 which has a plurality of pixels 21 that receive the wavelength resolved light L1 and convert the light L1 into electrical signals and in which the plurality of pixels 21 are arrayed in a row direction along the wavelength resolution direction and in a column direction perpendicular to the row direction; a conversion unit 12 which converts the electrical signals from the plurality of pixels 21 into photon numbers; and a generation unit 13 which integrates the photon numbers of the plurality of pixels 21 belonging to the same column and generates spectroscopic spectrum data based on the integration results.
G01J 3/36 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
G01J 3/44 - Spectrométrie Raman; Spectrométrie par diffusion
This spectrometry device comprises: a light incident part; a reflective diffraction grating; a photodetector; a lens; and an analysis unit. The photodetector receives a spectral image at a first light receiving region in a first exposure time so as to output first spectrum data of measured light, and receives a spectral image at a second light receiving region, arranged parallel to the first light receiving region, in a second exposure time which is longer than the first exposure time, so as to output second spectral data of measured light. The analysis unit generates spectral data on the basis of the first spectral data and the second spectral data. The photodetector is disposed so that a stray light region, where stray light is condensed, is located in the first light receiving region.
A spectroscopic device 5 that receives light L1, which has been wavelength-resolved in a predetermined direction by a spectroscopic optical system 4 including a spectroscopic element, and that acquires spectral data of the light L1 comprises: a CCD image sensor 9 including a pixel unit 11 in which a plurality of pixels 21 are arranged in both a row direction along the wavelength-resolving direction of the light L1 and a column direction perpendicular to the row direction, an accumulation unit 12 placed at the end of each column in the column direction of the pixel unit 11 and accumulating electric charges generated by the pixels 21 in each column, and a readout unit 13 that outputs electric signals of each column according to the magnitudes of the electric charges accumulated in the accumulation unit 12; a semiconductor element 10 that converts the electric signals of each column into digital signals, and outputs the digital signals; and a generation unit 15 that generates spectral data 32 on the basis of the digital signals.
G01J 3/36 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
G01J 3/44 - Spectrométrie Raman; Spectrométrie par diffusion
A spectroscopic device 5 is for receiving light L1 that has undergone wavelength-decomposition in a predetermined direction by a spectroscopic optical system 4 including a spectroscopic element, and outputting spectroscopic spectral data of the light L1. The spectroscopic device 5 comprises: a CMOS image sensor that has a pixel unit 11 which has a plurality of pixels 21 for receiving the wavelength-decomposed light L1 and converting the same into an electrical signal, and in which the plurality of pixels 21 are arranged in a row direction along a wavelength decomposition direction and in a column direction perpendicular to the row direction; an identification unit 14 that identifies, as specific pixels 21K among the plurality of pixels 21, pixels 21 on which a spectroscopic spectral image 31 of the light L1 is formed; and a generation unit 15 that adds up the pixel values of the specific pixels 21K belonging to the same column, and that generates spectroscopic spectral data based on the result of the adding.
G01J 3/36 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même Étude de plusieurs bandes d’un spectre à l’aide de détecteurs distincts
G01J 3/44 - Spectrométrie Raman; Spectrométrie par diffusion
This X-ray detection camera is provided with: a radiation detection element for directly converting incident X-ray into electrical charge, and outputting, as X-ray image data, the result of collecting electrical charge for each of a plurality of third electrodes; a first bias power supply for applying a bias voltage onto the radiation detection element; and a control unit. The control unit has: a determining unit for performing a determining process of determining, on the basis of the X-ray image data, whether it is possible to perform a reset operation of performing voltage control on the radiation detection element so that electrical charge is not collected by the radiation detection element; and a voltage control unit for controlling a voltage source so as to perform a reset operation if it is determined by the determining unit that a reset operation is possible.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
43.
RADIATION DETECTION DEVICE, RADIATION DETECTION SYSTEM, AND RADIATION DETECTION METHOD
Provided is an X-ray detection camera that determines, on the basis of a signal from an object detection sensor which detects an inspection subject irradiated with X-rays, whether or not it is possible to execute a resetting operation for conducting voltage control with respect to a detection unit so that electric charge is not collected by the detection unit, and that executes the resetting operation when it is possible to execute the resetting operation.
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
44.
BONDING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
This bonding method comprises, in the following order: a precipitation step in which a gallium part composed of precipitated gallium is formed on a virtual surface located inside a semiconductor target object by irradiating the inside of the semiconductor target object composed of gallium nitride-containing material with a laser beam; an exposure step in which the semiconductor target object is separated using a virtual plane as a boundary and the gallium part is exposed on a separation surface; and a bonding step in which a metal member containing a metal material different from gallium is bonded to the semiconductor target object by alloying the metal material and the gallium part.
This light source device comprises: a light source that outputs light; a reflection unit (spatial optical modulator) that has an input part for a control signal and that is configured to be able to control a reflection angle distribution of incident light on the basis of the control signal; and a diffraction grating that diffracts light outputted from the light source to cause the light to enter the spatial optical modulator and returns at least a portion of the light reflected by the spatial optical modulator to the light source. An optical resonator is formed from the light source and the spatial optical modulator, and the bandwidth of the light returned to the light source through the diffraction grating is controlled by controlling the angle distribution of the light reflected by the spatial optical modulator on the basis of the control signal.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p.ex. en agissant sur le milieu actif
A semiconductor light-receiving element equipped with a surface (1a) on which light is incident, a first semiconductor layer (21) of a first conductive type, a second semiconductor layer (22) of the first conductive type which has greater bandgap energy than does the first semiconductor layer (21) and is layered on the first semiconductor layer (21) on the surface (1a) side of the first semiconductor layer (21), a doping region (30) which has a second conductive type different from the first conductive type and is formed so as to extend from the surface (1a) toward the second semiconductor layer (22) side so as to at least reach the interior of the second semiconductor layer (22), wherein: the thickness (T22) of the second semiconductor layer (22) in a first direction (Z) which intersects said surface (1a) is less than the thickness of the first semiconductor layer (21) in the first direction (Z); the doping region (30) includes a plurality of sections (31) which face one another with a gap (30g) interposed therebetween when viewed from the first direction (Z); and the width (G30) of the gap (30g) is greater than the thickness (T22) of the second semiconductor layer (22) in the first direction (Z).
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
47.
OPTICAL-VORTEX CONTROL DEVICE AND OPTICAL-VORTEX CONTROL METHOD
An optical-vortex control device 1 controls the motion of a microbody in a medium in a sample 90 and includes a light source 10, an optical-vortex generation unit 20, lenses 30-33, an aperture 34, a dichroic mirror 40, a lighting unit 50, an imaging unit 60, and a control unit 70. The objective lens 30 condenses an optical vortex generated by the optical-vortex generation unit 20 and irradiates the microbody in the medium in the sample 90 with the condensed optical vortex to optically trap the microbody. The imaging unit 60 captures an image of the microbody optically trapped and in motion, and outputs image data thereof. The control unit 70 analyzes the motion of the microbody on the basis of the image data, and adjusts the phase distribution of the optical vortex generated by the optical-vortex generation unit 20 on the basis of the result of the analysis, thereby controlling the motion of the microbody. Accordingly, an optical-vortex control device that makes it possible to readily generate a desired optical vortex is realized.
G02B 21/32 - Micromanipulateurs combinés par construction avec des microscopes
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaire; Appareils à cet usage utilisant des radiations électromagnétiques
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
G03H 1/02 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une image; Leurs détails spécifiques - Détails
This photomultiplier tube comprises a photoelectric surface which emits photo-electrons in response to incident light, an electron multiplying unit including a plurality of dynodes which emit secondary electrons in response to incidence of the photo-electrons emitted from the photoelectric surface, and which multiply the secondary electrons, an acceleration electrode which is disposed between the photoelectric surface and the electron multiplying unit, for causing the photo-electrons to accelerate and be incident on the electron multiplying unit, and a tubular accommodating container for accommodating the photoelectric surface, the acceleration electrode, and the electron multiplying unit, wherein, when seen from a tube radial direction intersecting a tube axial direction of the accommodating container, the photoelectric surface, the acceleration electrode, and the electron multiplying unit are disposed such that no other member is interposed between a first end portion of the acceleration electrode on the photoelectric surface side thereof in the tube axial direction and the photoelectric surface, and between a second end portion of the acceleration electrode on the electron multiplying unit side thereof in the tube axial direction and the electron multiplying unit.
REFRACTIVE INDEX DISTRIBUTION MEASUREMENT DEVICE, FILM THICKNESS DISTRIBUTION MEASUREMENT DEVICE, REFRACTIVE INDEX DISTRIBUTION MEASUREMENT METHOD, AND FILM THICKNESS DISTRIBUTION MEASUREMENT METHOD
This measurement device 1A comprises a transportation unit 10, a light intensity acquisition unit 20, and a computation unit 30. The transportation unit 10 transports a polymer film in a transportation direction D1. The light intensity acquisition unit 20 radiates light at a plurality of spots, lined up in a direction intersecting the transportation direction D1, on the polymer film B being transported, and acquires the light intensities of reflected light reflected by the plurality of spots irradiated with the light. The computation unit 30 calculates the reflectance at each of the plurality of spots from the light intensities of the reflected light acquired by the light intensity acquisition unit 20, and obtains the refractive index distribution of the polymer film B on the basis of the reflectances.
G01N 21/41 - Réfringence; Propriétés liées à la phase, p.ex. longueur du chemin optique
G01B 11/04 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur spécialement adaptés pour mesurer la longueur ou la largeur d'objets en mouvement
50.
THICKNESS-DISTRIBUTION MEASUREMENT DEVICE AND THICKNESS-DISTRIBUTION MEASUREMENT METHOD
A thickness-distribution measurement device 1A comprises: a light source unit 20; a light detection unit 30; and a control device 40. The light source unit 20 irradiates, with light La, a region which extends in a width direction D2 in an object B that is being conveyed. The light detection unit 30 detects emission light Lb which has passed through the object B. The control device 40 calculates information about a relative thickness distribution in the width direction D2 of the object B, on the basis of detection results from the light detection unit 30. The light detection unit 30 includes an image sensor and a lens array. The image sensor has a plurality of pixels which are arranged in the width direction D2, and detects the intensity of the emission light Lb for each pixel. The lens array has a plurality of lenses the magnification of which is equal to 1, and which are arranged in the width direction D2. The lens array condenses the emission light Lb to form an image in the image sensor.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
This light detection device comprises: a wiring board; a light-receiving element; at least one connection member; and a film adhesive member. A mounting area has a pair of first sides and a pair of second sides. The film adhesive member is disposed in the mounting area. The film adhesive member includes a body section and at least one protruding section. The body section has: a pair of first edges which extend so as to cut out the mounting area on respective first sides; and a pair of second edges which extend so as to cut out the mounting area on respective second sides. The at least one protruding section extends from at least one of the pair of first edges and the pair of second edges.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
52.
HEAD IMAGE ACQUISITION DEVICE AND HEAD IMAGE ACQUISITION METHOD
This head image acquisition device is for acquiring an image of the head of a subject in a seated state and comprises: a seat part on which the subject sits; a pedestal part; an information detection part which includes a detection unit that detects radioactive rays from the subject; and a headrest part on which the head of the subject is fixed. The information detection unit is connected to the pedestal part so as to be movable relative to the pedestal part. The headrest part is connected to one of the information detection part and the pedestal part so as to be movable relative to the one of the information detection part and the pedestal part.
In a spatial light modulation device 10, a detection unit 7 detects light modulated in a spatial light modulation unit 3. An estimation unit 35 estimates an incident position P2 of light on the spatial light modulation unit 3 on the basis of a detection result from the detection unit 7. A phase pattern P1 set by a pattern setting unit 31 includes a phase pattern constructed so as to form, in the detection unit 7, a plurality of light collection spots by light modulated in the phase pattern P1. The detection unit 7 detects intensity information of the light collection spots. The estimation unit 35 estimates the incident position P2 of light on the spatial light modulation unit 3 on the basis of a comparison result of the intensity information of the plurality of light collection spots detected by the detection unit 7.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
54.
METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR PACKAGE
This method for manufacturing an optical semiconductor package comprises: a first step for temporarily bonding a light reception element and a first end of a metal pillar to a substrate; a second step for forming on the substrate a mold resin covering the light reception element and the metal pillar; a third step for polishing or grinding the mold resin from the side facing a second surface of the light reception element, to expose the second surface of the light reception element and a second end of the metal pillar; a fourth step for forming a first wiring layer on the second surface of the light reception element and on an end surface of the mold resin; a fifth step for separating the substrate from the light reception element, the metal pillar, and the mold resin; and a sixth step for, after the fifth step, forming a second wiring layer on the side, with respect to the light reception element and the mold resin, opposite to the side on which the first wiring layer is positioned.
An electrodeless laser-driven light source includes a laser source that generates a CW sustaining light and a pump laser that generates a pump. An optical beam combiner combines the CW sustaining light and the pump such that the CW sustaining light and the pump propagate co-linearly. A Q-switched laser crystal generates pulsed light in response to the pump. A gas-filled bulb is configured such that the pulsed light ignites a pulse plasma in a breakdown region of the gas bulb and the sustaining light sustains a CW plasma in a CW plasma region of the gas bulb, thereby emitting a high brightness light from the gas bulb, where the gas-filled bulb is positioned between the output of the pump laser and the pump input of the Q-switched laser crystal such that the CW plasma absorbs the pump light quenching the pulsed light generated by the Q-switched laser crystal.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
56.
SCINTILLATOR PANEL, RADIATION DETECTOR, METHOD FOR MANUFACTURING SCINTILLATOR PANEL, AND METHOD FOR MANUFACTURING RADIATION DETECTOR
This scintillator panel comprises a flexible support substrate, a scintillator layer containing a plurality of columnar crystals, and an intermediate layer disposed between the support substrate and the scintillator layer. The plurality of columnar crystals include a plurality of first ends on the support substrate side and a plurality of second ends on the opposite side to the support substrate. Each of the plurality of first ends tapers toward the support substrate side. Each of the plurality of second ends has an end face along a plane. A portion of the intermediate layer is located at least in a region between the plurality of first ends.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
G21K 4/00 - TECHNIQUES NON PRÉVUES AILLEURS POUR MANIPULER DES PARTICULES OU DES RAYONNEMENTS IONISANTS; DISPOSITIFS D'IRRADIATION; MICROSCOPES À RAYONS GAMMA OU À RAYONS X Écrans de conversion pour transformer une distribution spatiale de particules ou de rayonnements ionisants en images visibles, p.ex. écrans fluorescents
57.
OPTICAL MODULE FOR ENCODER AND REFLECTION-TYPE ENCODER
This optical module comprises: a support having a bottom wall part and side wall parts; a light-receiving element and a light-emitting element disposed on the bottom wall part; a light transmission member disposed on end faces of the side wall parts; and a resin member formed on a surface of the light transmission member. The surface of the light transmission member has an inner region and outer regions, which face the end faces of the side wall parts. The resin member is integrally formed on the inner region and the outer regions so as to extend across said regions. The refractive index of the resin member with respect to light having a center wavelength of the light emitted from the light-emitting element is smaller than the refractive index of the light transmission member with respect to the light having the center wavelength. The light transmission member is joined to the side wall parts by the portions, of the resin member, formed on the outer regions.
G01D 5/347 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette avec atténuation ou obturation complète ou partielle des rayons lumineux les rayons lumineux étant détectés par des cellules photo-électriques en utilisant le déplacement d'échelles de codage
This cell evaluation method comprises a labeling step S1, a refractive index distribution acquisition step S2, and an analysis step S3. In the labeling step S1, a specific part of cells to be evaluated is labeled with a labeling substance having different refractive indices at each of a first wavelength and a second wavelength. In the refractive index distribution acquisition step S2, the refractive index distribution of the cells of which a specific part was labeled in the labeling step S1 is acquired at each of the first wavelength and the second wavelength. In the analysis step S3, the distribution of the specific part in the cells is evaluated by comparing the refractive index distributions at each of the first wavelength and the second wavelength. In this way, a method that makes it possible to easily evaluate even unknown cells is achieved.
G01N 33/483 - Analyse physique de matériau biologique
G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
G01N 21/45 - Réfringence; Propriétés liées à la phase, p.ex. longueur du chemin optique en utilisant les méthodes de Schlieren
59.
OPTICAL MODULE FOR ENCODER, ENCODER, AND METHOD FOR MANUFACTURING OPTICAL MODULE FOR ENCODER
This optical module comprises: a support having a bottom wall, a light receiving element disposed on the surface of the bottom wall with the light receiving surface facing away from the bottom wall; an FOP having an input surface composed of one end surface of each of a plurality of optical fibers and an output surface composed of the other end surface of each of the plurality of optical fibers, the FOP being disposed on the light receiving element with the output surface facing the light receiving surface; a first resin member disposed between the light receiving surface and the output surface, and bonding the FOP to the light receiving element; and a second resin member disposed on the surface of the bottom wall so as to be in contact with the light receiving element and the FOP. The material of the first resin member and the material of the second resin member are different from each other.
G01D 5/347 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette avec atténuation ou obturation complète ou partielle des rayons lumineux les rayons lumineux étant détectés par des cellules photo-électriques en utilisant le déplacement d'échelles de codage
60.
COOLING UNIT, OBJECTIVE LENS MODULE, AND SEMICONDUCTOR INSPECTION APPARATUS
This cooling unit comprises a jacket that includes a center part and an outside part. An opening that allows light from a semiconductor device to pass through is formed at the center part. The outside part includes a contact part that contacts a stage to which the semiconductor device is disposed. A supply flow path through which a cooling fluid for cooling the semiconductor device flows is formed at the jacket. A groove part configured so that the cooling fluid flows down from the top surface of the center part is formed between the center part and the outside part of the jacket. A discharge flow path through which the cooling fluid to be discharged outside flows is connected to the groove part.
1Nn1N1NN. A sample measurement device and a sample measurement method with which it is possible to easily perform a quantitative analysis by Raman spectroscopy in a measurement range on a sample is realized thereby.
This cooling unit comprises a jacket for radiating heat from a semiconductor device. The jacket has a middle section and an outside section. The middle section has an opening formed therein, through which light passes from the semiconductor device. The outside section has a contact portion which contacts a stage on which the semiconductor device is placed. The jacket has a supply flowpath formed therein, through which a cooling fluid for cooling the semiconductor device flows. The jacket also has a ventilation path formed therein, which facilitates the flow of air between the inner side of the outside section and the outside of the jacket.
This lower extremity vascular lesion evaluation device (1A) comprises a measurement unit (10A) and an evaluation unit (20A). The measurement unit (10A) irradiates the sole (31) of a foot of an evaluation subject with near-IR light, receives near-IR light that is scattered or absorbed by tissue within the sole, and measures the local oxygen saturation of the sole (31) on the basis of the light reception intensity. The evaluation unit (20A) evaluates a lower extremity vascular lesion of the evaluation subject on the basis of the measurement value for the local oxygen saturation of the sole (31). There is thereby realized a lower extremity vascular lesion evaluation device that is suitably used for simple and highly sensitive early discovery of a lower extremity vascular lesion.
A61B 10/00 - Autres méthodes ou instruments pour le diagnostic, p.ex. pour le diagnostic de vaccination; Détermination du sexe; Détermination de la période d'ovulation; Instruments pour gratter la gorge
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
64.
HOLOGRAM DATA GENERATION SYSTEM AND HOLOGRAM DATA GENERATION METHOD
The present invention makes holograms for use in spatial light modulators appropriate. A hologram data generation system 10 generates hologram data for realizing holograms used for modulating light in spatial light modulators and comprises: an acquisition unit 11 that acquires target information indicating the output light intensity distribution, which is the target of output light from the hologram; a determination unit 12 that determines a generation method to be used for generating hologram data according to the type of intensity distribution indicated by the target information acquired by the acquisition unit 11; and a generation unit 13 that generates hologram data from the target information acquired by the acquisition unit 11, according to the generation method determined by the determination unit 12.
G03H 1/08 - Procédés ou appareils pour produire des hologrammes pour faire des hologrammes synthétiques
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
In a second step, a function 213 of a real space after an amplitude distribution 211 is replaced with a target amplitude distribution 214 is converted into a function 223 of a wave number space including an amplitude distribution 221 and a phase distribution 222 by means of a Fourier transform B6. In a third step, the phase distribution 222 of the function 223 is aligned with the phase distribution 222 of the function 223 in one of two or more phase modulation regions, the amplitude distribution 221 of the function 223 is replaced with a target amplitude distribution 204, and the function 223 is converted into a function 233 of a real space including an amplitude distribution 231 and a phase distribution 232 by means of an inverse Fourier transform B2. The function 213 of the second step is then replaced with the function 233 while repeating the second step and the third step. The phase distribution 232 of the function 233 subjected to an inverse Fourier transform by the final third step is set as the phase distribution of each phase modulation region.
A semiconductor light emitting element 1 comprises a semiconductor lamination 20, an electrode 16, and an electrode 17. The semiconductor lamination 20 includes an active layer 12 and a phase modulation layer 15. The phase modulation layer 15 has a plurality of phase modulation regions 151. Each of the phase modulation regions 151 includes a basic region 15a that has a first refractive index, and a plurality of different refractive index regions 15b that have a second refractive index different from the first refractive index and are distributed two-dimensionally. The electrode 16 includes a plurality of electrode portions 161 that respectively overlap the plurality of phase modulation regions 151 when viewed from a lamination direction of the semiconductor lamination 20. The plurality of electrode portions 161 are electrically separated from each other. Laser light L that has resonated in each of the plurality of phase modulation regions 151 is irradiated onto a common irradiation region as optical images corresponding to the arrangement of the plurality of different refractive index regions 15b. The optical images respectively output from the plurality of phase modulation regions 151 are phase-locked with each other.
This magnetic sensor module 1 comprises: a cell 2; a pump laser light source 4; a photodiode 13 for detecting an intensity of pump light; a probe laser light source 5; a photodiode element 9a for detecting an intensity of probe light; a differential amplifier 16 for generating a magnetism detection signal on the basis of the probe light passed through the cell 2; and a control circuit 17 which carries out first determination processing for determining a driving condition of light source 4 on the basis of the intensity of the pump light as detected by the photodiode 13 while performing wavelength sweeping of the pump light by controlling light source 4 and/or second determination processing for determining a driving condition of light source 5 on the basis of the intensity of the probe light as detected by the photodiode element 9a while performing wavelength sweeping of the probe light by controlling light source 5.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
G01R 33/032 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs magnéto-optiques, p.ex. par effet Faraday
This solid-state imaging element comprises: a semiconductor substrate; a first element part formed on the semiconductor substrate; and a second element part formed on the semiconductor substrate. The first element part has: a light receiving unit that generates an electric charge in response to the incidence of light; and a transfer unit that transfers the electric charge. The transfer unit has: a first transfer electrode and a second transfer electrode that are disposed on an electric-charge transfer region of the semiconductor substrate, and that are aligned in an electric-charge transfer direction; and a discharge gate electrode that is disposed on an electric-charge discharge region of the semiconductor substrate, the region extending along the electric-charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as a second layer. The first transfer electrode includes a section overlapping with a section of the second transfer electrode and a section overlapping with a section of the discharge gate electrode. The second transfer electrode is away from the discharge gate electrode.
This solid-state imaging element comprises a semiconductor substrate, a first element section, and a second element section. The first element section includes a light reception unit and a transfer unit, and the second element section includes a capacitance unit. The transfer unit includes a first transfer electrode and a second transfer electrode, and an insulating layer. The capacitance unit includes a first capacitance electrode and a second capacitance electrode which overlap each other, and the insulating layer. A part of the first transfer electrode overlaps a part of the second transfer electrode. The insulating layer has a first portion located between the part of the first transfer electrode and the part of the second transfer electrode. The insulating layer has a second portion located between the first capacitance electrode and the second capacitance electrode. The thickness of the first portion is greater than the thickness of the second portion.
This specimen support comprises: a substrate comprising a first surface, a second surface on the reverse side to the first surface, and a porous structure opening onto at least the first surface; a protective layer provided so as to cover the surface of the porous structure; and a conductive layer provided so as to cover at least the portion of the protective layer that is provided above the first surface.
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p.ex. l'émission cathodique
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ions; Canons à ions utilisant une ionisation de surface, p.ex. émission thermo-ionique ou photo-électrique
72.
SAMPLE SUPPORT BODY AND METHOD FOR MANUFACTURING SAMPLE SUPPORT BODY
This sample support body is used for ionization of a component of a sample. The sample support body comprises a substrate, a conductive layer, and a plurality of particles. The substrate includes a main surface and a plurality of holes opened in the main surface. The conductive layer is provided on the main surface such that the holes are not blocked. The plurality of particles are provided on the surface of the conductive layer. The absorption of an energy beam used for the ionization by the plurality of particles is higher or equal to the absorption of the energy beam by the conductive layer.
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p.ex. l'émission cathodique
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ions; Canons à ions utilisant une ionisation de surface, p.ex. émission thermo-ionique ou photo-électrique
73.
POLARIZED LIGHT SEPARATION ELEMENT AND OPTICAL RECEPTION DEVICE
00 and condenses the first through sixth polarized light components each in mutually different first through sixth condensing positions on a condensing surface 35. The structure pattern 20 has a first structure pattern for condensing the first and second polarized light components, a second structure pattern for condensing the third and fourth polarized light components, and a third structure pattern for condensing the fifth and sixth polarized light components, and is configured such that a plurality unit patterns are arranged two dimensionally, the unit pattern being a pattern comprising the first structure, the second structure, and the third structure. Through this configuration, there is provided a polarized light separation element whereby separation and condensing of polarized light components of object light can be suitably performed by a simple structure.
A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
75.
SPECIMEN SUPPORT, IONIZATION METHOD, AND MASS SPECTROMETRY METHOD
This specimen support comprises a substrate that comprises: a first surface; a second surface that is on the reverse side to the first surface; and an irregular porous structure that opens onto the first surface. The porous structure comprises an aggregate of a plurality of beads. The porous structure comprises bonded portions, which form cavity portions between beads, due to adjacent beads being bonded to one another. A conductive layer is provided on at least the portion, of the surfaces of the beads or the bonded portion, which forms the first surface. A protective layer is provided so as to cover the surfaces of the plurality of beads, the bonded portions and the conductive layer.
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p.ex. l'émission cathodique
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ions; Canons à ions utilisant une ionisation de surface, p.ex. émission thermo-ionique ou photo-électrique
76.
SIGNAL PROCESSING METHOD, SIGNAL PROCESSING DEVICE, AND SIGNAL PROCESSING SYSTEM
SS of the signal light beams, the respective numbers of virtual photons S of the signal light beams entering the photoelectron multiplier tubes 11a, 11b, 11c, 11d; and execute data analysis on the basis of the respective numbers of virtual photons S of the signal light beams.
SS of the signal light, and thereby calculate a virtual photon quantity S of the signal light incident on the photomultiplier tubes 11a, 11b, 11c, 11d; and execute data analysis on the basis of the virtual photon quantity S of the signal light.
In a signal processing circuit 21, an input terminal 22 is configured to accept input of an analog signal output from an avalanche photodiode 11 operating in a Geiger mode. A comparison circuit 23 outputs a signal based on a component that exceeds a threshold, among components contained in a signal input to the comparison circuit 23. An adjusting circuit 25 includes an AC coupling unit 42, a level shifter unit 43, and a reference value adjusting unit 44. The AC coupling unit 42 performs AC coupling of the input terminal 22 and the comparison circuit 23. The level shifter unit 43 adjusts a voltage of the signal input to the comparison circuit 23 to a value lower than a reverse bias voltage applied to the avalanche photodiode 11. The reference value adjusting unit 44 adjusts a reference value of the signal input to the comparison circuit 23.
This image processing method creates a tomographic image of a subject by repeating a reconstruction step S1, a CNN processing step S2, and an updating step S3 multiple times, starting from an initial state. In the reconstruction step S1, a process according to a list mode iterative approximation reconstruction method is performed to create a first image. In the CNN processing step S2, input information is input to the CNN according to the DIP technology, a second image is created by the CNN, and the CNN is trained. In the updating step S3, a third image is updated on the basis of the first image and the second image. Thus, a device and method are implemented that are capable of creating a noise-reduced tomographic image on the basis of the list data collected by a radiation tomography imaging device.
In this multi-pulse light source, a dispersion compensation unit comprises: a spectroscopic element which separates a plurality of wavelength components into the respective wavelength components; a separation optical element which guides a first light pulse group including at least one wavelength component among the plurality of wavelength components, and a second light pulse group including at least one wavelength component different from the at least one wavelength component included in the first light pulse group among the plurality of wavelength components to light paths different from each other; a first spatial light modulator on which the first light pulse group is incident and which compensates the first light pulse group for dispersion of each wavelength component; and a second spatial light modulator on which the second light pulse group is incident and which compensates the second light pulse group for dispersion of each wavelength component.
G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
H04B 10/2513 - Dispositions spécifiques à la transmission par fibres pour réduire ou éliminer la distorsion ou la dispersion due à la dispersion chromatique
This photodetector comprises: a semiconductor photodetection element that includes a semiconductor layer having a first surface and a second surface on the reverse side from the first surface; and a light-condensing structure arranged on the first surface. The semiconductor layer includes a plurality of photodetection units two-dimensionally arranged along the first surface or the second surface. The light-condensing structure includes a body part and a metal layer. The body part has a plurality of first openings arranged so as to correspond to the plurality of photodetection units, and includes a plurality of layers laminated onto the first surface. The metal layer covers the respective inner surfaces of the plurality of first openings so as to expose regions respectively corresponding to the plurality of first openings on the surface of the semiconductor photodetection element. In each of the plurality of first openings, the surface of the metal layer has a shape that becomes wider toward the side opposite the semiconductor photodetection element.
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
82.
LASER PROCESSING METHOD AND LASER PROCESSING DEVICE
This laser processing method comprises: a first step for preparing a wafer (20) having a first region in which an upper layer in a street (400) is composed of an insulating film (24), and a second region in which the upper layer is composed of the insulating film (24) and a metal structure (25) on the insulating film (24); a second step for irradiating the street (400) with predetermined first laser light (L1); and a third step after the second step for irradiating the street (400) with predetermined second laser light (L2). The first laser light (L1) is laser light with a processing energy such that a part of the insulating film (24) of the first region is removed while allowing the other parts thereof to remain, and such that the metal structure (25) of the second region is completely removed and a part of the insulating film (24) of the second region is removed while allowing the other parts thereof to remain. The second laser light (L2) is laser light with a processing energy such that the insulating film (24) of the first region and the insulating film (24) of the second region after the second step are completely removed.
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
B23K 26/351 - Travail par rayon laser, p.ex. soudage, découpage ou perçage pour l'ajustage ou l'accord de composants électriques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
83.
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
This laser processing device irradiates an object with laser light along a line, thereby forming a groove in the object along the line. The laser processing device comprises a support part, a laser light source, a spatial light modulator, and a condensing unit. A modulation pattern that is displayed on a display unit of the spatial light modulator includes a branching pattern in which the laser light is divided into at least one or a plurality of first branched laser lights for forming a first groove and one or a plurality of second branched lights for forming a second groove. The spacing between the position of a condensation point of the first branched laser light and the position of a condensation point of the second branched light, which are adjacent, in a direction following the line is greater than the spacing between the position of the condensation point of the first branched laser light and the position of the condensation point of the second branched light in the width direction of the first and second grooves.
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
B23K 26/067 - Division du faisceau en faisceaux multiples, p.ex. foyers multiples
B23K 26/364 - Gravure au laser pour faire une rainure ou une saignée, p.ex. pour tracer une rainure d'amorce de rupture
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
This laser processing method is equipped with: a step for forming a first groove in a target along a line by irradiating the target with a laser beam; a step for forming a second groove along said line by irradiating the target with a laser beam in a manner such that the end section thereof in the widthwise direction of the first groove overlaps said first groove; and a step for forming a composite groove including the first and second grooves in the target, and thereafter, forming a modified region along said line inside the target by irradiating the target with a laser beam, and causing a crack to propagate from the modified region.
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p.ex. pour faire des fissures d'amorce de rupture
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
85.
MACHINING CONDITION ACQUISITION METHOD AND LASER MACHINING DEVICE
This machining condition acquisition method is for acquiring conditions for laser machining in which an object having a substrate, which includes a first surface and a second surface opposite the first surface and a functional element layer which is provided on the second surface of the substrate, is irradiated with a laser beam from the first surface side so as to form a weakened region in the functional element layer. The machining condition acquisition method comprises a first step for performing a first machining serving as the laser machining a plurality of times at different positions within the first surface while changing the condensing position of the laser beam in a Z direction intersecting the first surface within a range including the interface between the substrate and the functional element layer.
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p.ex. pour faire des fissures d'amorce de rupture
An optical device 1 comprises a light emission unit 2, a phase adjustment unit 3, and a light production unit 4. The light emission unit 2 emits first light L1 and second light L2 that have polarization states different from each other. The light production unit 4 produces third light L3 on the basis of the first light L1 and the second light L2 the phase difference between which has been adjusted by the phase adjustment unit 3. The first light L1 and the second light L2 are incident on a birefringent element 14. A control unit 15 controls the temperature of the birefringent element 14 and/or voltage to be applied to the birefringent element 14. The light production unit 4 includes a nonlinear optical element 17 that produces the third light L3 on the basis of the first light L1 and/or the second light L2. The first light L1 and the second light L2 that have been emitted from the birefringent element 14 are incident on the nonlinear optical element 17 of the light production unit 4.
This radiation detector comprises: a scintillator; first and second semiconductor light detecting elements; a first wiring member electrically connected to the first semiconductor light detecting element; and a second wiring member electrically connected to the second semiconductor light detecting element. The scintillator has a pair of end surfaces that face one another in a first direction, and first and second side surfaces that face one another in a second direction intersecting the first direction, and has a rectangular shape when viewed from the first direction. The first and second side surfaces link the pair of end surfaces. The first semiconductor light detecting element includes a first semiconductor substrate disposed so as to face the first side surface. The second semiconductor light detecting element includes a second semiconductor substrate disposed so as to face the second side surface.
The present invention provides an optical member (30) for terahertz waves, the optical member being formed of a molded body that contains a mixture of an organic non-linear optical material (31) and an excipient (32). The present invention also provides an optical element (20, 40) which comprises the optical member (30) and a support member (35) that supports the optical member (30). The present invention also provides a method for producing an optical member (30) for terahertz waves, the method comprising: a first step in which a mixture is formed by mixing an organic non-linear optical material (31) and an excipient (32) with each other; and a second step in which a shaped body of the mixture is formed by applying a pressure to the mixture after the first step.
This radiation detector comprises: a scintillator; first and second semiconductor light detection elements; a first wiring member that is electrically connected to the first semiconductor light detection element; and a second wiring member that is electrically connected to the second semiconductor light detection element. The scintillator has a pair of end surfaces that are opposite from each other in a first direction and first and second side surfaces that are opposite from each other in a second direction which intersects the first direction. The scintillator has a rectangular shape in a view from the first direction. The first and second side surfaces connect the pair of end surfaces. The first semiconductor light detection element has a first semiconductor substrate that is disposed so as to be opposite from the first side surface. The second semiconductor light detection element has a second semiconductor substrate that is disposed so as to be opposite from the second side surface.
This spectroscopic device comprises: an oscillating element having an oscillating surface; a diffraction grating for spectrally diffracting measurement light that has been reflected by the oscillating surface; a first light detecting unit including a first light detector for detecting a portion of the measurement light that has been spectrally diffracted by the diffraction grating; a light source for emitting inspection light; and a second light detecting unit including a second light detector for detecting the inspection light that has been reflected by the oscillating surface. The oscillating element includes: a supporting portion; a movable portion including the oscillating surface; and a linking portion linking the supporting portion and the movable portion such that a deflection angle of the oscillating surface varies about a predetermined axis. The second light detecting unit has an elongate light receiving region of which a longitudinal direction is a movement direction of the inspection light.
G01J 3/18 - Production du spectre; Monochromateurs en utilisant des éléments diffractants, p.ex. réseaux
G01J 3/32 - Mesure de l'intensité des raies spectrales directement sur le spectre lui-même en étudiant des bandes d'un spectre successivement à l'aide d'un détecteur unique
This sample support unit comprises: a substrate that has a first surface and a second surface, and has formed therein a porous structure that has been opened in at least the first surface; and a frame that is removably attached to the substrate and holds the substrate such that at least a portion of the first surface is exposed. When attached to the substrate, the frame has a fixing section positioned outward of the substrate when viewed from a direction perpendicular to the first surface.
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p.ex. l'émission cathodique
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ions; Canons à ions utilisant une ionisation de surface, p.ex. émission thermo-ionique ou photo-électrique
This sample support comprises a substrate that has a first surface and a second surface on the opposite side from the first surface, and that has a measurement region in which a porous structure penetrating both the first surface and the second surface is formed. A calibration section having a surface that is flush with the first surface is formed in the substrate. The water absorbency of the calibration section is lower than the water absorbency of the measurement region.
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p.ex. l'émission cathodique
H01J 49/00 - Spectromètres pour particules ou tubes séparateurs de particules
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p.ex. fermetures étanches au vide; Dispositions pour le réglage externe des composants électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ions; Canons à ions utilisant une ionisation de surface, p.ex. émission thermo-ionique ou photo-électrique
94.
LASER MEDIUM UNIT, LASER AMPLIFICATION DEVICE, AND LASER OSCILLATION DEVICE
A laser medium unit (2) comprises: a laser gain medium (10) formed in planar shape and having a first surface (10a) and a second surface (10b), the laser gain medium (10) generating emitted light (L2) when irradiated with excitation light (L1) from the first surface (10a); and an optical guide/cooling member (20) that is connected to the first surface (10a) to guide the excitation light (L1) toward the first surface (10a) and to cool the laser gain medium (10). The first surface (10a) is composed of a first region (R1) to which the optical guide/cooling member (20) is thermally connected, and a second region (R2) other than the first region (R1). The entirety of the second region (R2) is thermally shielded from the optical guide/cooling member.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation
95.
SOLID-STATE IMAGING DEVICE, SHAPE-MEASURING DEVICE, AND SHAPE-MEASURING METHOD
A solid-state imaging device 5A comprises: a first light reception unit 10; and second light reception units 20A, 20B. In the first light reception unit 10, a plurality of pixel pairs 11 are arranged in the x-direction. In each of the second light reception units 20A, 20B, a plurality of pixels 21, which each generate electric charges in an amount in accordance with the amount of received light, are arranged in the y-direction. Each of the pixel pairs 11 includes a first pixel 12 and a second pixel 13. When linear light extending in the x-direction enters the first light reception unit 10, as the entering location of the light is shifted from one side toward the other side in the y-direction, the amount of electric charges generated by the first pixels 12 gradually decreases and the amount of electric charges generated by the second pixels 13 gradually increases. As a result, a solid-state imaging device capable of assessing and adjusting an optical setting state when used in shape measurement using a light sectioning method.
A photon count identification system, according to the present invention, is provided with a plurality of pixels including photoelectric conversion elements and amplifiers which amplify charges converted by the photoelectric conversion elements and convert the result into voltage; an A/D converter which converts the voltage output by the amplifiers of the plurality of pixels into digital values; a first derivation unit which derives a provisional value of a photon count for each pixel in the plurality of pixels on the basis of the digital values; and a second derivation unit which derives a confirmed value of the photon count in the target pixels on the basis of a first probability based on optical shot noise and a second probability based on read-out noise.
H04N 25/60 - Traitement du bruit, p.ex. détection, correction, réduction ou élimination du bruit
H04N 25/76 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
97.
THRESHOLD VALUE DETERMINATION METHOD, THRESHOLD VALUE DETERMINATION PROGRAM, THRESHOLD VALUE DETERMINATION DEVICE, PHOTON NUMBER IDENTIFICATION SYSTEM, PHOTON NUMBER IDENTIFICATION METHOD, AND PHOTON NUMBER IDENTIFICATION PROCESSING PROGRAM
This threshold value determination method comprises: a step for determining a probability distribution of provisional values for each number of photons of a pixel of interest, on the basis of an observation probability for each number of photoelectrons based on a probability distribution of the number of photons, and an observation probability for each number of photoelectrons based on a probability distribution of photoelectrons associated with read noise for the pixel of interest; and a step for determining, on the basis of the probability distribution of each number of photons, threshold value data for sorting the provisional values into corresponding numbers of photons.
A wavefront measurement device 1 comprises: a phase modulation unit 2 having a spatial light modulator 7 into which incoming light L0 enters; a pattern generation unit 3 that generates a phase pattern 11 to be inputted to the spatial light modulator 7; an imaging unit 4 having an imaging area 14 for capturing an image of a portion of the incoming light L0 modulated by the spatial light modulator 7 as measurement light L1; and an analysis unit 5 that analyzes the wavefront of the incoming light L0 on the basis of the result of the image capture by the imaging unit 4. The pattern generation unit 3 generates a plurality of phase patterns 11 for which a virtual pattern 12 for measurement is shifted to positions different from each other so that a focused spot 16 of the measurement light L1 modulated by the spatial light modulator 7 shifts over time to different positions in the imaging area 14.
An optical semiconductor package (1A) comprises: a first chip (2); a second chip (3); a first resin part (4a) that is formed so as to cover a lateral surface (2c) of the first chip (2); a second resin part (4b) that is formed so as to cover a lateral surface (3c) of the second chip (3); a first terminal (21) that is provided to a first inner surface (2a) of the first chip (2); a second terminal (32) that is provided to a second inner surface (3a) of the second chip (3); and first wiring (8) that is electrically connected to the first terminal (21), that passes through the inside of the first resin part (4a), and that, in an opposing direction (Z) in which the first inner surface (2a) and the second inner surface (3a) oppose each other, extends from the first inner surface (2a) side to a first outer surface (2b) side of the first chip (2). The second chip (3) is an optical element having a light receiving part (31) that receives light which is incident on a second outer surface (3b) of the second chip (3) or a light emitting part (31) that generates light which is emitted to the outside from the second outer surface (3b). The first resin part (4a) and the second resin part (4b) are provided in an integral manner, or in a continuous manner with another member therebetween.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
This high-speed object measurement device comprises: a light projecting unit that projects, to a moving subject, light the wavelength of which changes temporally; and an imaging unit that images light from the subject which received the light projected by the light projecting unit, and that acquires wavelength information for each of multiple pixels. The imaging unit continuously acquires the temporal changes of the wavelengths.
G01N 21/27 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection photo-électrique
H04N 23/45 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande pour générer des signaux d'image à partir de plusieurs capteurs d'image de type différent ou fonctionnant dans des modes différents, p. ex. avec un capteur CMOS pour les images en mouvement en combinaison avec un dispositif à couplage de charge [CCD]
H04N 23/50 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails de structure
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande munis de moyens d'éclairage
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