A current detection circuit includes a current detection resistor of which a first end is connected to a ground potential, a PWM signal generation circuit configured to output a PWM signal, a smoothing circuit configured to generate a smooth voltage by smoothing the PWM signal, and an amplifier circuit configured to amplify a voltage generated at a second end of the current detection resistor. The amplifier circuit is a grounded-base circuit or a grounded-gate circuit. A control terminal of a first transistor included in the grounded-base circuit or the grounded-gate circuit is configured to receive a voltage that is based on the smooth voltage.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 3/011 - Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
H03K 3/017 - Adjustment of width or dutycycle of pulses
A first fuse unit and a second fuse unit each have the same configuration. A rectification element is coupled in parallel with a fuse element. A first transistor has its drain coupled to a second end of the fuse element, its source coupled to a second line, and its gate coupled to a program terminal. A second transistor has its source coupled to the second end of the fuse element, its drain coupled to the output terminal, and its gate coupled to the test terminal. A third transistor has its drain coupled to the output terminal, and its source coupled to the second line.
G11C 17/16 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
A power supply device includes a power supply circuit that permits an output voltage to be supplied to a succeeding-stage circuit, an external terminal configured to be connectable to the succeeding-stage circuit and to a pull-up resistor to which a supply voltage is applied, a transistor having a first terminal connected to the external terminal, a controller that turns the transistor from on to off when, during start-up of the output voltage, the output voltage enters a normal range and a fault detection circuit that can detect at least one of an open fault, in which the external terminal remains open, and a short fault, in which the external terminal is short-circuited to an application terminal for the supply voltage.
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 1/36 - Means for starting or stopping converters
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
This detection device is provided with a transmission unit that generates electromagnetic waves, a compartment bottom portion by which electromagnetic waves are reflected, and a reception unit that receives electromagnetic waves. The transmission unit emits electromagnetic waves to a detection target region through a partition member for partitioning the detection target region from the transmission unit and the reception unit. The compartment bottom portion is provided on the optical path of the electromagnetic waves emitted from the transmission unit and reflects electromagnetic waves having passed through at least a portion of the detection target region. The reception unit receives electromagnetic waves that have been reflected by the compartment bottom portion and are inputted from the detection target region through the partition member.
The semiconductor device has the CSP structure and may include a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps may be arranged in two rows along the periphery of the semiconductor device. The electrode pads may be arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring may be extended from an electrode pad and may be connected to any one of the outermost solder bumps or any one of the inner solder bumps.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 23/528 - Layout of the interconnection structure
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
6.
VOLTAGE MONITORING CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, VEHICLE, CONTROL DEVICE, SWITCHING REGULATOR, AND POWER SUPPLY DEVICE
This voltage monitoring circuit comprises: a first differential input pair including a first transistor configured so as to receive a reference voltage and a second transistor configured so as to receive a voltage to be monitored; and a second differential input pair including a third transistor configured so as to receive a first voltage and a fourth transistor configured so as to receive a second voltage. The output end of the first transistor and the output end of the third transistor are connected in common. The output end of the second transistor and the output end of the fourth transistor are connected in common.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
A semiconductor integrated circuit device includes: a terminal; an internal resistor that is any one of a pull-up resistor configured so that a first end of the pull-up resistor is connected to the terminal and a first constant voltage is applied to a second end of the pull-up resistor, or a pull-down resistor configured so that a first end of the pull-down resistor is connected to the terminal and a ground voltage is applied to a second end of the pull-down resistor; and an AD converter configured so that a voltage of the terminal is converted into digital data having a number of bits of 2 or more.
H10B 99/00 - Subject matter not provided for in other groups of this subclass
H10B 69/00 - Erasable-and-programmable ROM [EPROM] devices not provided for in groups , e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
9.
SEMICONDUCTOR DEVICE AND VOLTAGE APPLICATION METHOD
A semiconductor device includes, for example: an internal power supply that generates VREG from VIN; a circuit block that operates from VREG; a circuit block that operates from a node voltage Vn appearing at an internal node n1; and a switcher that switches the connection destination of the internal node n1. The switcher includes: a switch SW1 connected between an application terminal for VREG and the internal node n1; and a switch SW2 connected between an external terminal PAD and the internal node n1. The circuit block includes a switch controller configured to control the switches SW1 and SW2. The switch controller controls the switcher such that switching between a first state (SW1 on, SW2 off) and a second state (SW1 off, SW2 on) proceeds via a third state (SW1 on, SW2 on).
A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
11.
LEVEL SHIFTER, SEMICONDUCTOR DEVICE, SWITCHING POWER SUPPLY, AND LIGHT EMITTING DEVICE
A level shifter includes a current output amplifier configured to output a first output current and a second output current through first and second output terminals thereof, respectively, a first resistor configured to be connected between each of an inverted input terminal and the first output terminal of the current output amplifier and an application terminal of a ground potential, and a second resistor configured to be connected between the second output terminal of the current output amplifier and an application terminal of a negative potential lower than the ground potential. A first analog signal referenced to the ground potential is accepted at a non-inverted input terminal of the current output amplifier, and a second analog signal referenced to the negative potential is outputted through one terminal of the second resistor.
The present disclosure provides a nitride semiconductor element. The nitride semiconductor element includes a semiconductor substrate having a substrate upper surface and a substrate lower surface facing opposite to the substrate upper surface, and having an active region and a peripheral region. A nitride semiconductor layer is selectively formed in the active region at the substrate upper surface to form a transistor. A source electrode and a drain electrode are in contact with the nitride semiconductor layer. A gate electrode is disposed between the source electrode and the drain electrode. A first electrode is formed on the substrate lower surface and used to electrically connect to the source electrode. The nitride semiconductor element includes a bidirectional Zener diode formed in the peripheral region and electrically connected to the first electrode.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A semiconductor device includes a conductive substrate including an obverse surface facing a first side in thickness direction and a reverse surface opposite from the obverse surface, a first switching semiconductor element bonded to the obverse surface, a first conductive member for passing main circuit current switched by the semiconductor element, and a sealing resin covering the semiconductor element, the conductive member and a part of the substrate. The substrate includes first and second conductive portions mutually spaced in first direction orthogonal to thickness direction. The semiconductor element is electrically bonded to the first conductive portion. The conductive member includes a first part overlapping with the first and the second conductive portions as viewed in thickness direction and being spaced from the obverse surface toward the first side in thickness direction. The first part includes a first opening.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
This cooling structure can comprise: a semiconductor device provided with a base material and a sealing resin; a cooler; and a joining material for joining the cooler and the base material. When seen in a first direction, the joining material can protrude outward of the sealing resin. The joining material can have a first surface and a second surface opposite to each other in the first direction. The first surface can be in contact with the base material. The second surface can be in contact with the cooler. The area of the second surface can be larger than the area of the first surface.
H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
This nitride semiconductor device (10) is provided with: a first nitride semiconductor layer (16); a second nitride semiconductor layer (18) which is formed on the first nitride semiconductor layer (16), and has a larger band gap than the first nitride semiconductor layer (16); and a gate electrode (32), a source electrode (24) and a drain electrode (26), which are formed above the second nitride semiconductor layer (18). The first nitride semiconductor layer (16) contains GaN. The half width of an X-ray rocking curve of the first nitride semiconductor layer (16) with respect to the (102) plane is 1,100 arcsec to 1,400 arcsec.
This semiconductor device comprises a semiconductor element, a support conductor that supports the semiconductor element, a support substrate that supports the support conductor, and a first intermediate bonding material that is interposed between the support conductor and the support substrate. The bond between the support conductor and the intermediate bonding material and the bond between the support substrate and the intermediate bonding material are both solid-phase bonds. One of the bonding interface between the support conductor and the intermediate bonding material and the bonding interface between the support substrate and the intermediate bonding material includes a bonding anomaly region in which the bonding condition is different from that of the surrounding area.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
This semiconductor device is provided with a first die pad, a first semiconductor element, a sealing resin, and a reinforcement material. The first semiconductor element is bonded to the first die pad. The sealing resin covers the first semiconductor element. The reinforcement material is bonded to the first die pad. The linear expansion coefficient of the reinforcement material is lower than the linear expansion coefficient of the sealing resin. In one example, the reinforcement material is covered by the sealing resin. In addition, the reinforcement material is on the same side as the first semiconductor element with respect to the first die pad in a first direction.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
18.
SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND VEHICLE
For example, a semiconductor device 1 includes a semiconductor substrate (N-SUB) of a first conductivity type, a well (P/W) of a second conductivity type different from the first conductivity type that is formed in the semiconductor substrate (N-SUB), an output terminal (OUT) configured to conduct electricity to the semiconductor substrate (N-SUB), a ground terminal (GND) configured to apply a ground voltage, and a detection circuit (62) configured to detect the output voltage appearing on the output terminal (OUT) and switch between applying the ground voltage or the output voltage to the well (P/W).
H03K 19/096 - Synchronous circuits, i.e. using clock signals
H01L 21/76 - Making of isolation regions between components
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for electronic equipment
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
19.
SEMICONDUCTOR DEVICE, SWITCHING POWER SUPPLY, AND LIGHTING DEVICE
For example, a semiconductor device disclosed in the present description is configured to function as a component of a switching power supply, and includes: a current sense signal generator configured to generate a current sense signal by amplifying a sense voltage corresponding to the output current of the switching power supply; a voltage sense signal generator configured to generate a voltage sense signal corresponding to the output voltage of the switching power supply; a selector configured to output as a selected sense signal one of the current sense signal and the voltage sense signal according to a mode switch signal; and an output feedback controller configured to control the driving of the switching power supply based on the selected sense signal.
A switching power supply device includes a switching element and a controller. The controller includes a current source circuit, a voltage source circuit, a PWM signal generation circuit, a capacitor of which the first terminal is connected to the current source circuit and of which the second terminal is connected to the PWM signal generation circuit, a one-way conduction element provided between the first terminal of the capacitor and the voltage source circuit and configured to pass only a current flowing from the capacitor toward the voltage source circuit, and a comparison circuit configured to compare the voltage appearing at the first terminal of the capacitor with a voltage based on the output voltage of the switching power supply device and to control the switching device based on the result of the comparison.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A current sensor includes: a first and a second input terminal configured to be capable of having a sense resistor connected therebetween; a square wave generation circuit connected to the first and second input terminals and configured to be capable of generating a square-wave signal with an amplitude proportional to the voltage across the sense resistor; and a current sense signal output circuit configured to be capable of outputting based on the square-wave signal a current sense signal corresponding to the current passing through the sense resistor.
A slave circuit that is connected to a master circuit via a bus, receives a power supply voltage via the bus, and receives a communication signal superimposed on the power supply voltage includes a diode bridge circuit configured to rectify a voltage of the bus, a capacitor connection pin to which a capacitor is connected, a P-type transistor connected between an output of the diode bridge circuit and the capacitor connection pin, an operational amplifier having a first input configured to receive a feedback voltage, having a second input configured to receive a reference voltage, and having an output connected to a gate of the P-type transistor, a receiving circuit configured to receive the communication signal, a first switch connected between the gate and source of the P-type transistor, and a control unit configured to control the first switch by generating a control signal synchronous with the communication signal.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
A nitride semiconductor device includes: a first nitride semiconductor layer made of a nitride semiconductor; a second nitride semiconductor layer made of a nitride semiconductor having a bandgap larger than that of the first nitride semiconductor layer; a gate electrode located above the second nitride semiconductor layer; and a source electrode and a drain electrode formed on the second nitride semiconductor layer, wherein the first nitride semiconductor layer includes one or more stacked bodies, each of which includes a doped layer as a carbon-doped gallium nitride layer, and a non-doped layer as a non-doped gallium nitride layer formed on the doped layer, and wherein in a region below at least one of the gate electrode or the drain electrode, the number of dislocation lines passing through a top surface of the non-doped layer is smaller than the number of dislocation lines passing through a bottom surface of the non-doped layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/43 - Electrodes characterised by the materials of which they are formed
A semiconductor device is configured to increase energy absorbed by an active clamp. The semiconductor device comprises a semiconductor element, a sealing resin, and a coating member. The semiconductor element includes a first electrode. The sealing resin covers the semiconductor element. The coating member is interposed between the first electrode and the sealing resin. The coating member contains a material with higher thermal conductivity than the sealing resin.
The present disclosure provides a semiconductor element, which is a switching element. The switching element includes an element front surface on which a gate pad, a plurality of drain pads, and a plurality of source pads are disposed. A source area which is the total area of the plurality of source pads, is larger than a drain area, which is the total area of the plurality of drain pads.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
The semiconductor device includes a chip which has a main surface, a first conductivity type channel region which is formed in a surface layer portion of the main surface, a second conductivity type drift region which is formed in the surface layer portion of the main surface so as to be adjacent to the channel region, a gate insulating film which covers the channel region and the drift region on the main surface, and a polysilicon gate which has a second conductivity type first portion which faces the channel region across the gate insulating film and a first conductivity type second portion which faces the drift region across the gate insulating film and forms a pn-junction portion with the first portion.
A transducer includes: a film support portion; a vibration film that is connected to the film support portion and capable of displacing in a thickness direction; a base material having an opposed surface that is opposed to the vibration film; and a first piezoelectric element that is provided with a pair of electrodes and a piezoelectric film sandwiched between the pair of electrodes, and is arranged on the vibration film, in which the transducer maintains a pressure in a space between the base material and the vibration film so as to keep displacement of the vibration film within a certain range.
H04R 1/28 - Transducer mountings or enclosures designed for specific frequency response; Transducer enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
A power-on reset circuit supplies a reset pulse to a sequential circuit to be initialized. A latch circuit includes a first inversion circuit and a second inversion circuit structured to invert and amplify a signal input thereto, with an output node of the first inversion circuit connected to an input node of the second inversion circuit, and with an output node of the second inversion circuit connected to an input node of the first inversion circuit. A decision circuit receives the first signal from the output node of the first inversion circuit and the second signal from the output node of the second inversion circuit and generates a reset pulse on the basis of the first signal and the second signal.
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
29.
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the outer peripheral portion has a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, and the semiconductor device further includes a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
The present invention provides a nitride semiconductor device, including: a silicon substrate; a first lateral transistor over a first region of the silicon substrate and including: a first nitride semiconductor layer formed over the silicon substrate; and a first gate electrode, a first source electrode and a first drain electrode formed over the first nitride semiconductor layer; a second lateral transistor over a second region of the silicon substrate and including: a second nitride semiconductor layer formed over the silicon substrate; and a second gate electrode, a second source electrode and a second drain electrode formed over the second nitride semiconductor layer; a first separation trench formed over a third region; a source/substrate connecting via hole formed over the third region; a first interlayer insulating layer formed over the first source electrode and the second source electrode; and a second interlayer insulating layer formed in the first separation trench.
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L 21/76 - Making of isolation regions between components
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
A semiconductor device includes: a substrate; and a semiconductor element, wherein the substrate includes a base and a conductor pattern arranged on the base, the conductor pattern includes a die pad portion and first and second connection portions, the die pad portion includes first and second ends in a first direction, and third and fourth ends in a second direction, outer periphery of the die pad portion includes first and second sides in the second direction, and third and fourth sides in the first direction, a recess is formed on one of the first and second sides, the first and second connection portions are respectively connected to a first corner of the outer periphery where the second and third sides are joined, and a second corner of the outer periphery where the second and fourth sides are joined.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
32.
SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE, AND VEHICLE
A semiconductor device 1 comprises: a switch element 11(n) connected in parallel to a light emitting element 2(n); a detection circuit 13(n) that compares the voltage V(n+1)-V(n) between both ends of the switch element 11(n) to a prescribed threshold voltage Vth and generates a detection signal S1(n); and a failure diagnosis circuit 22(n) that performs diagnosis of whether the switch element 11(n) is stuck in an OFF state by monitoring the detection signal S1(n) at a timing when the drive signal VG(n) of the switch element 11(n) is at a logic level when ON.
H05B 45/44 - Circuit arrangements for operating light-emitting diodes [LED] - Details of LED load circuits with an active control inside an LED matrix
H05B 47/105 - Controlling the light source in response to determined parameters
H05B 47/16 - Controlling the light source by timing means
H05B 47/23 - Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant for protection of two or more light sources connected in series
H05B 47/25 - Circuit arrangements for protecting against overcurrent
33.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This semiconductor device comprises: a semiconductor circuit part; a first conduction member electrically connected to the semiconductor circuit part; a second conduction member electrically connected to the semiconductor circuit part; an insulating member which is in contact with the first conduction member and the second conduction member; and a sealing resin which covers the semiconductor circuit part, the first conduction member, the second conduction member, and a portion of the insulating member. The first conduction member and the second conduction member are fixed by the insulating member.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
An SiC semiconductor device includes an SiC chip that has a main surface, and an n-type drift region that is formed in a surface layer portion of the main surface and has an impurity concentration adjusted by at least two types of pentavalent elements.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
Provided is a RAM including a first read bit line, a first write bit line, a second read bit line, a second write bit line, a charge circuit configured to charge one of the first and second read bit lines and the first and second write bit lines at a time of short-circuit detection, and a discharge circuit configured to discharge the other of the first and second read bit lines and the first and second write bit lines at the time of the short-circuit detection.
G11C 29/50 - Marginal testing, e.g. race, voltage or current testing
G01R 31/52 - Testing for short-circuits, leakage current or ground faults
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
The present disclosure provides a semiconductor integrated circuit (IC) capable of suppressing influence of disturbance noise. The semiconductor IC includes an input terminal, an amplifier circuit, a first element and a second element. The input terminal is configured to allow inputting a signal of abrupt voltage change. The amplifier circuit is configured to amplify a difference between two input signals. The first element is connected to a first input end of the amplifier circuit. The second element is connected to a second input end of the amplifier circuit. In a plan view, a distance between a first position included in an arrangement region of the first element and a third position included in the input terminal is equal to a distance between a second position included in an arrangement region of the second element and the third position.
The present disclosure provides a differential amplifier circuit for actuating a speaker. The differential amplifier circuit includes: a first amplifier configured to amplify a positive signal of a differential signal; a second amplifier configured to amplify a negative signal of the differential signal; and a determination circuit configured to monitor the positive signal and the negative signal. The determination circuit includes: a comparator; a selection circuit configured to selectively supply a first detection signal corresponding to the positive signal and a second detection signal corresponding to the negative signal to a first input of the comparator by time division; a voltage source configured to supply a plurality of threshold voltages to a second input of the comparator by time division; and a determination unit configured to determine a state of the differential signal based on an output of the comparator.
A semiconductor device capable of suppressing separation of a sealing resin at an internal reverse surface is provided. The semiconductor device includes a semiconductor element, a first lead on which the semiconductor element is mounted, and a sealing resin covering the semiconductor element and a part of the lead. The lead includes an obverse surface to which the semiconductor element is bonded, a reverse surface facing away from the obverse surface in a thickness direction of the first lead and exposed from the sealing resin, and an internal reverse surface facing the same side as a side that the reverse surface faces in the thickness direction and covered with the sealing resin. The internal reverse surface includes an irregular portion.
For example, an I/O circuit is formed by freely combining a plurality of kinds of standard cells included in a cell library. The plurality of kinds of standard cells include at least first standard cells and a second standard cell. The first standard cells include first protection elements and a first power line formed in a region over the first protection elements to conduct to the first protection elements. The second standard cell includes a second protection element formed in a layout identical with that of the first protection elements, and a second power line formed in a region over the second protection element to conduct to the second protection element while being isolated from the first power line.
This pressure sensor comprises: a package exterior body having an upper wall; and a MEMS chip. The MEMS chip has a membrane and is disposed in an internal space of the package exterior body. A plurality of holes passing through the upper wall in the thickness direction of the upper wall are formed in the upper wall.
This semiconductor device comprises: a first metal layer and second metal layer; a second semiconductor element mounted on the second metal layer; a first conductive member; a second connection member that conductively connects the second semiconductor element and the first conductive member; and a sealing resin that covers at least a portion of each of the second metal layer, the second semiconductor element, the first conductive member, and the second connection member. The first conductive member is spaced apart from the first metal layer in a z direction. The semiconductor device further comprises a first insulating spacer that is interposed between the first metal layer and the first conductive member.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
A MEMS module includes: a substrate; a semiconductor chip in which a MEMS including a mechanical movable portion is formed; and a soft member that is interposed between the substrate and the semiconductor chip and has a lower hardness than the substrate, wherein the soft member is disposed in a partial region of a first main surface of the semiconductor chip facing the substrate.
A nitride semiconductor device includes a passivation layer which has a first opening and a second opening, and which covers an electron supply layer, a gate layer, and a gate electrode. The passivation layer includes: a first insulation layer formed on at least a portion of the electron supply layer positioned, in plan view, between the first opening and gate layer; and a second insulation layer which covers the gate layer and gate electrode, and which is formed on the electron supply layer positioned, in plan view, between the second opening and gate layer. The second insulation layer is formed from a material having a Young's modulus lower than that of the first insulation layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
This nitride semiconductor device (10) comprises: a hexagonal SiC substrate (22) having a main surface (22A) inclined at an off angle of 2-6° in a specific crystal direction with respect to the c-plane; a nitride semiconductor layer (24) disposed on the main surface (22A) of the SiC substrate (22); and a gate electrode (20), a source electrode (38), and a drain electrode (40) disposed on the nitride semiconductor layer (24). The nitride semiconductor layer (24) includes an electron transport layer (30) and an electron injection layer (32) which is disposed on the electron transport layer (30) and has a band gap larger than that of the electron transport layer (30). The gate electrode (20) extends in a second direction and is disposed between the source electrode (38) and the drain electrode (40) which are isolated in a first direction. The first direction intersects a third direction, which matches the specific crystal direction in plan view, at an angle within the range of 90°±15°.
A switch device 1 includes, for example, a power supply terminal T1 to which a power supply voltage VBB is supplied, an output terminal T2 to which a load is externally connected, a switch element 10 connected between the power supply terminal T1 and the output terminal T2, a signal output terminal T5 that outputs an output current detection signal Vs corresponding to an output current Io flowing during the ON period of the switch element 10 (IN = H), an overcurrent protection circuit 71 that limits the output current detection signal Vs to or below a predetermined overcurrent limit value Vocp during the ON period of the switch element 10 (IN = H), and an output abnormality detection circuit 72 that monitors the output voltage Vo of the output terminal T2 in a first state (SEN=L) in which no current is supplied to the output terminal T2 during the OFF period (IN = L) of the switching element 10 and a second state (SEN = H) in which the current is supplied to the output terminal T2, while switching the states, to switch the logic level of the output current detection signal Vs.
H02H 3/087 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current for dc applications
H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from norm for electronic equipment
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H03K 17/00 - Electronic switching or gating, i.e. not by contact-making and -breaking
This joining structure comprises a first joining target that has a first joining layer, a second joining target that has a second joining layer, and an intermediate joining material that is between the first joining target and the second joining target. The intermediate joining material has a base material layer and a first surface layer and second surface layer that are disposed on either side of the base material layer. The first joining layer and the first surface layer are joined by solid phase bonding. The second joining layer and the second surface layer are joined by solid phase bonding. The main component of the base material layer is Cu.
A light-emitting element drive device (201) is equipped with an overcurrent detection unit (6) which is configured so as to detect an overcurrent of the current flowing to light-emitting element units (41-44) of one or more channels, and so as to be capable of connecting to one or more current detection resistors (R1) provided between the positive electrodes of the light-emitting element units and an end for application of a power supply voltage (Vout) for driving said light-emitting element units.
A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
A semiconductor device includes a first die pad with a first obverse surface facing in z direction, a second die pad spaced from the first die pad and including a second obverse surface facing in z direction, a first semiconductor element on the first obverse surface, a second semiconductor element on the second obverse surface, an insulating element on the first or second obverse surface and located between the first and second semiconductor elements in x direction to relay signals between the first and second semiconductor elements while electrically insulating these semiconductor elements, and a wire bonded to the first semiconductor element and the first obverse surface. The first die pad includes a first bond portion bonded to the wire, and a first opening located between the first bond portion and the first semiconductor element in y direction and including an opening end in the first obverse surface.
Provided is a controller circuit of a step-down DC/DC converter, the controller circuit including a ramp voltage generating circuit that generates a periodic ramp voltage, a clamp voltage generating circuit that generates a clamp voltage, an error amplifier that generates an error signal that depends on an error between an electrical state of the step-down DC/DC converter and a target state of the electrical state, a clamp circuit that clamps the error signal by using the clamp voltage, and a pulse width modulation comparator that compares the error signal resulting from the clamping by the clamp circuit with the ramp voltage. The ramp voltage generating circuit includes a first capacitor, a first current source, a switch, a second capacitor, and a driver circuit. The clamp voltage generating circuit includes a third capacitor, a fourth capacitor, a first resistor, and a second current source.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
B60R 16/03 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for supply of electrical power to vehicle subsystems
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
The present disclosure provides a driving circuit of a high-side transistor. The driving circuit drives the high-side transistor based on an input signal. A level shift circuit is configured to level-shift the input signal. A high-side driver drives the high-side transistor based on an output of the level shift circuit. A first transistor and a second transistor constitute a latch circuit. A third transistor and a fourth transistor are P-channel DMOS transistors. A seventh transistor and an eighth transistor are N-channel DMOS transistors and are connected in parallel with the third transistor and the fourth transistor.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03F 3/217 - Class D power amplifiers; Switching amplifiers
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only
An output node of a high-side driver circuit is coupled to the gate of a high-side transistor. The high-side driver circuit is structured to operate in a first mode in which the high-side driver circuit outputs a driving current with a first current amount during a first period from the transition of a high-side control signal HGCTL from the off level to the on level, and outputs the driving current with a second current amount that is smaller than the first current amount during a second period subsequent to the first period.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
An example switch device includes a switching element to connect/disconnect a current path from a power supply terminal to a ground terminal via a load, and an overcurrent protection circuit to limit output current flowing in the switching element to be an overcurrent limit value or less. When an output short circuit of the load is detected, the overcurrent protection circuit decreases the overcurrent limit value to be lower as a power supply voltage is higher. The overcurrent protection circuit includes a reference current generation portion that includes: a differential amplifier portion, an upper side current generation portion arranged to generate a predetermined an upper side current, a lower side current generation portion arranged to generate a lower side current, and a difference current generation portion arranged to output a difference current based on the lower side current and the upper side current, as the reference current.
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
B60R 16/03 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for supply of electrical power to vehicle subsystems
G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
G01K 7/16 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements
H02H 3/08 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current
H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
H02H 6/00 - Emergency protective circuit arrangements responsive to undesired changes from normal non-electric working conditions using simulators of the apparatus being protected, e.g. using thermal images
H02M 3/156 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H03K 17/16 - Modifications for eliminating interference voltages or currents
An insulation module includes: a light-emitting element; a light-receiving element that receives light from the light-emitting element; a first die pad on which the light-emitting element is mounted; a second die pad that is provided in alignment with the first die pad and on which the light-receiving element is mounted; a transparent resin that at least covers both the light-emitting element and the light-receiving element; a reflection member that covers at least the transparent resin and is formed from a material that reflects light from the light-emitting element; and an encapsulation resin that encapsulates the reflection member as well as the transparent resin and is formed from a material having a light-blocking effect. At least one of the reflection member and the transparent resin includes inorganic particles that absorb or reflect light from the light-emitting element.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
This insulation module includes: a first light-emitting element and a first light-receiving element that constitute a photocoupler; a first plate-shaped member that has light-transmitting properties and is provided between the first light-receiving element and the first light-emitting element; an encapsulation resin that at least encapsulates the light-emitting element and the light-receiving element; and a plurality of terminals that are provided to a first plastic side surface of the encapsulation resin. The first plate-shaped member is layered on the light-receiving surface of the first light-receiving element, and the first light-emitting element is layered on the first plate-shaped member. Recessed-projecting portions are provided to sections between adjacent terminals among the plurality of terminals on the first plastic side surface.
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
This insulation module comprises: a light-emitting element that has a light-emitting surface and a pad formed on the light-emitting surface; a light-receiving element that has a light-receiving surface facing the light-emitting surface with a space therebetween, and that constitutes a photocoupler together with the light-emitting element; a plate-shaped member that is provided between the light-emitting surface and the light-receiving surface, has light-transmitting and insulating properties, and is inclined with respect to both the light-emitting surface and the light-receiving surface; and a wire that is connected to the pad. The pad is disposed offset from the center toward a section among the light-emitting surface where the distance to the plate-shaped member increases.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A semiconductor device includes a semiconductor element, a first lead electrically connected to the semiconductor element, and a connecting member connected to the semiconductor element and the first lead. The connecting member includes a core containing a first material, and a surface layer. The surface layer contains a first metal and covers the core. The first material includes an alloy in which at least a third metal is added to a second metal and has a higher corrosion resistance than the second metal. The third metal has the highest proportion among the metals added and has an atomic number greater than the second metal.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor device, including: an insulating substrate provided with a substrate surface; a first conductive body and a second conductive body provided on the substrate surface; the second conductive body being separated from the first conductive body; an insulating film covering the first conductive body and the second conductive body; and a third conductive body provided on a face of the insulating film at an opposite side thereof from a side at which the substrate surface is disposed, the third conductive body penetrating the insulating film and contacting the second conductive body, wherein the insulating film includes a thinned portion at which a thickness of the insulating film is decreased such that the insulating film can be locally fractured by application of a voltage to the insulating film between the third conductive body and the first conductive body.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A semiconductor device comprising: a chip having a main surface and made of a semiconductor of a first conduction type; a first region of a second conduction type selectivity formed in a main-surface-side surface-layer portion of the chip; an insulating film selectively formed on the main surface; an interlayer dielectric film disposed over the main surface so as to cover the insulating film; a gate electrode and a source electrode which have been disposed over the interlayer dielectric film; a gate-connection electroconductive film formed on the insulating film and electrically connected to the gate electrode; and a contact region of the second conduction type which has been selectively formed in a surface-layer portion of the first region and to which the source electrode is electrically connected. When an area of the contact region to which the source electrode has been bonded is referred to as a source/contact junction region, then the distance between the position of each of portions of the lower surface of the gate-connection electroconductive film and the source/contact junction region located nearest thereto has a maximum value of 90 μm or less.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
According to one aspect of the present embodiment, a semiconductor device 10 comprises: a base 1 having a first main surface 1a and a second main surface 1b opposite from the first main surface 1a; and a ground pad 21 arranged on the first main surface 1a. The base 1 includes: a first via 14 that is arranged inside of the base 1; a capacitor 16 that is arranged inside of the base 1 and electrically connected to the first via 14; and a second via 15 that is arranged inside of the base 1 and electrically connected to the capacitor 16. The arrangement in which the first via 14, the capacitor 16, the second via 15, the capacitor 16, and the first via 14 appear in this order is set as the minimum unit, and the semiconductor device 10 has a periodic structure (100, 200, 300) in which multiple of these minimum units are periodically connected.
H01G 4/38 - Multiple capacitors, i.e. structural combinations of fixed capacitors
H01G 4/40 - Structural combinations of fixed capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
This element evaluation device comprises: a target element connected between first and second nodes; a drive switching element connected between the second node and a third node; an inductor connected between a fourth node to which a power supply voltage is applied and the second node; a switching circuit that switches the drive switching element; a voltage generation circuit connected between the first and fourth nodes; and a capacitor connected between the first and third nodes. The voltage generation circuit generates a voltage between the first and fourth nodes, with the first node as a high potential side, when a return current flows that returns to the fourth node via the second node, the first node, and the voltage generation circuit from the fourth node after the drive switching element is turned off.
This electric power supply control device 200 comprises: a control circuit 180 that turns an upper-side switch 111 and a lower-side switch 112 of a switching output circuit 110 on and off, thereby driving an inductor current IL and generating an output voltage VOUT from an input voltage PVDD; an error amplifier 140 that compares a prescribed reference voltage REF and a feedback voltage FB that corresponds to the output voltage VOUT, and outputs an error signal ERR including voltage feedback information Vinfo; an information-retaining unit 230 that samples current feedback information Iinfo corresponding to the inductor current ILL flowing to the lower-side switch 112 in a period in which the lower-side switch 112 is on, and outputs a hold as a retention signal HLD in a period in which the upper-side switch 111 is on; and an off-timing control unit 190 that individually receives input of each of the error signal ERR and the retention signal HLD, and determines an off timing of the upper-side switch 111.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
This power unit comprises a power module and a capacitor module. The power module has a power conversion circuit, a first power terminal, and a second power terminal. The capacitor module has a capacitor element, a first output terminal connected to the first power terminal, and a second output terminal connected to the second power terminal. The first power terminal and the second power terminal are aligned in a first direction, and have different positions in a specific direction intersecting the first direction. The first output terminal and the second output terminal are aligned in the first direction, and have different positions in the specific direction.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
This electronic element comprises a body portion, a first electrode disposed on one side in a first direction of the body portion, and a first bonding layer stacked on the first electrode. The first bonding layer has a first protruding portion and a second protruding portion formed therein, each protruding from the first electrode in the first direction. In a cross section of the first bonding layer including the first direction in an in-plane direction thereof, the first protruding portion and the second protruding portion are spaced apart from each other.
This electric power conversion unit is provided with a plurality of semiconductor devices, a mounting object, and one mounting member. The plurality of semiconductor devices each comprise a semiconductor element and a sealing part which covers the semiconductor element. The mounting object comprises a main body part which is in contact with each one of the plurality of semiconductor devices. The one mounting member holds the plurality of semiconductor devices on the mounting object. The one mounting member comprises a fixed part which is fixed to the mounting object, and a pressing part which presses the plurality of semiconductor devices against the main body part.
H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
This signal transmission device comprises a first chip that includes a first transistor, a second chip, a plurality of first lead terminals, a plurality of second lead terminals, an inter-chip wire that electrically connects the first chip and the second chip, and a plurality of first lead wires that separately connect the first chip and the plurality of first lead terminals. The inter-chip wire is formed using a material that contains gold. The first lead wires are formed using a material that contains copper or aluminum.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
This signal transmission device comprises: a first chip including a first transformer, a second chip, a plurality of first terminals, a plurality of second terminals, a plurality of third terminals, inter-chip wires, and a plurality of first terminal wires. The inter-chip wire individually connects the first chip and the second chip. The inter-chip wire individually connects the first chip and the third chip. The first terminal wires individually electrically connect the first chip and a plurality of first ends. The inter-chip wire is made of a material containing gold. The first terminal wire is made of a material containing copper or aluminum.
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
74.
METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
A semiconductor device manufacturing method includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placing step and a curing step. In the first preparation step, a first leadframe including an island part is prepared. In the second preparation step, a semiconductor element including an element obverse surface, an element reverse surface, a first electrode and a second electrode is prepared. In the mounting step, the semiconductor element is mounted on the island part with a first conductive paste interposed between the element reverse surface and the island part. In the third preparation step, a second leadframe including a first part, a second part, a frame part, a first connecting part and a second connecting part is prepared. In the placing step, the second leadframe is placed with a second conductive paste interposed between the first part and the first electrode and with a third conductive paste interposed between the second part and the second electrode. In the curing step, the first conductive paste, the second conductive paste and the third conductive paste are hardened.
A power supply control apparatus, includes: a driver configured to respectively drive an output transistor and a synchronous rectification transistor configured to generate an output voltage from an input voltage and supply the output voltage to a load; and a controller configured to, in a light load mode in which output feedback control is performed such that a switching frequency of the output transistor becomes lower as the load becomes lighter, during an off period from a time at which both the output transistor and the synchronous rectification transistor are turned off to an on timing of the output transistor based on the output feedback control, periodically turn on the synchronous rectification transistor within a range in which the switching frequency does not fall below a predetermined lower limit value.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
76.
STATE DETECTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND VEHICLE
The present disclosure provides a state detection device, which is designed in a power supply circuit including a feedback control unit configured to perform feedback control based on a difference between a feedback voltage corresponding to an output voltage and a reference voltage; and an output capacitor configured to smooth the output voltage. The state detection device is configured to detect a state of the output capacitor. The state detection device includes target value varying unit and a detector. The target value varying unit is configured to increase a target value of the output voltage. The detector is configured to detect the state of the output capacitor based on a change in the output voltage while the output capacitor is being charged as the target value of the output voltage rises or while the output capacitor is being discharged after the target value of the output voltage rises.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
G05F 1/565 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A semiconductor device includes: a substrate having an obverse and a reverse face; wirings on the obverse face such as a first and a second drive wiring; a semiconductor element connected to the first and second drive wirings; a first drive conductor on the same side as the semiconductor element with respect to the substrate outside of the semiconductor element as viewed in a thickness direction and connected to the first drive wiring; a second drive conductor on the same side as the semiconductor element with respect to the substrate outside of the semiconductor element as viewed in the thickness direction and connected to the second drive wiring; and a sealing resin covering the wirings and the semiconductor element, while also covering the first and second drive conductor such that their faces opposite to the substrate in the thickness direction are exposed. The first and the second drive conductor are separated in a direction parallel to the obverse face. The first drive conductor is smaller in volume than the second drive conductor.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
78.
SOUND WAVE PROCESSING DEVICE AND ULTRASONIC SYSTEM
A sound wave processing device includes a transmission signal generation unit that generates a transmission signal for transmitting a sound wave, a received wave signal output unit that outputs a received wave signal based on receiving the sound wave, a correlation-convolution integral processing unit that performs correlation-convolution integral processing in parallel for each reference wave data, on the basis of the received wave signal and a plurality of reference wave data, and an own wave identification unit that determines whether or not the received sound wave is own wave, which is a reflected wave of the sound wave transmitted by the transmission signal generation unit, on the basis of a correlation-convolution integral value output from the correlation-convolution integral processing unit.
G01S 15/931 - Sonar systems specially adapted for specific applications for anti-collision purposes of land vehicles
G01S 7/534 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group - Details of non-pulse systems
79.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a first resin layer having a first obverse surface facing in a thickness direction, a first wiring layer facing the first obverse surface, a semiconductor layer, and a semiconductor element. The semiconductor element includes an electrode electrically connected to the semiconductor layer and facing the first obverse surface and is electrically bonded at the electrode to the first wiring layer. The semiconductor device further includes a second resin layer having a second obverse surface facing the same side as the first obverse surface in the thickness direction, and a second wiring layer facing the second obverse surface and electrically connected to the semiconductor layer. The second wiring layer is in contact with the semiconductor layer. The second wiring layer extends across an outer edge of the semiconductor layer as viewed in the thickness direction.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
80.
INDUCTANCE ELEMENT AND INDUCTANCE ELEMENT FABRICATION METHOD
An inductance element including: a support body including a main face including a first area and a second area surrounding the first area; a first resin body disposed within the first area; and an inductor provided at the main face of the support body, wherein the first resin body includes a first soft magnetic body layer and a second soft magnetic body layer that are both disposed inside the first area, wherein the inductor is positioned between the first soft magnetic body layer and the second soft magnetic body layer, wherein the first soft magnetic body layer includes a first insulating resin body and plural first magnetic bodies surrounded by the first insulating resin body, and wherein the second soft magnetic body layer includes a second insulating resin body and plural second magnetic bodies surrounded by the second insulating resin body.
H01F 41/00 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
H01F 41/34 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film in patterns, e.g. by lithography
81.
SEMICONDUCTOR DEVICE, BASE-SIDE SEMICONDUCTOR CHIP, AND BONDING-SIDE SEMICONDUCTOR CHIP
A semiconductor device includes: a first semiconductor chip on which a first alignment mark, a second alignment mark, first and second terminals for measuring conduction, a wiring that electrically connects the first alignment mark and the first terminal, and a wiring that electrically connects the second alignment mark and the second terminal are provided; and a second semiconductor chip on which a third alignment mark, a fourth alignment mark, and a wiring that electrically connects the third alignment mark and the fourth alignment mark are provided and which is bonded to the first semiconductor chip in such a way that the first alignment mark and the third alignment mark overlap each other, and the second alignment mark and the fourth alignment mark overlap each other.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A first chip comprising a substrate, an element-insulating layer disposed on the substrate, and wiring layers provided to the element-insulating layer. The wiring layers comprise a first wiring layer and an end wiring layer serving as a second wiring layer disposed in a position differing from that of the first wiring layer in the Z direction and electrically connected to the first wiring layer. The first wiring layer includes a first lap portion, which lies within the end wiring layer in a plan view, and a first protrudent portion, which protrudes from the end wiring layer in the plan view.
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
83.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
The present invention provides a semiconductor device that comprises: an insulating first film which is formed along the side wall of an element isolation trench, and which has a first portion that is formed along the bottom wall and the side wall of the element isolation trench and a second portion that is led out from the first portion along the bottom wall and has an opening through which the bottom wall is exposed; a second film which contains a material that has an etching selectivity with respect to the first film, and which is formed along the upper surface region of the second portion and the first portion of the first film; and a conductive buried body that is buried in the element isolation trench.
H01L 21/76 - Making of isolation regions between components
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
This semiconductor device comprises: a semiconductor element having a first electrode; a first lead electrically connected to the first electrode; a first conductive member which is electrically connected and joined to the first electrode and the first lead; and a sealing resin which covers the semiconductor element and the first conductive member. The sealing resin has a bottom surface and a side surface. The first lead has: a first terminal part exposed from the bottom surface; a first extension part extending from the first terminal part to a side where the semiconductor element is located in a second direction; and a first suspension part which is connected to the first extension part and is exposed from the side surface. The first conductive member is electrically connected and joined to the first extension part. The dimension of the first extension part in the second direction is greater than the dimension of the first terminal part in the second direction.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
This signal transmission device comprises: a first chip including an isolation transformer; a second chip; a plurality of first lead terminals; a plurality of second lead terminals; an inter-chip wire that electrically connects the first chip and the second chip; and a first lead wire that individually connects the first chip and a plurality of first lead terminals. The inter-chip wire is made of a material containing gold. The first lead wire is made of a material containing copper or aluminum.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
A signal transmission device according to the present invention is provided with: a first chip including a first transformer; a second chip; a plurality of first lead terminals; a plurality of second lead terminals; an inter-chip wire electrically connecting the first chip and the second chip; and first lead wires individually connecting the first chip to the plurality of first lead terminals. The inter-chip wire is formed from a material that includes gold. The first lead wires are formed from a material that includes copper or aluminum.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
A signal transmission device comprising a first chip, which includes a first transformer, a second chip, a plurality of first lead terminals, a plurality of second lead terminals, chip-to-chip wires which electrically connect the first chip to the second chip, and first lead wires which connect the first chip to the plurality of first lead terminals separately. The chip-to-chip wires are made of a material including gold. The first lead wires are made of a material including copper or aluminum.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
A semiconductor device includes: a semiconductor region of a first conductivity type having a main surface; a capacitor region of a second conductivity type formed in a surface layer portion of the main surface; and at least one trench structure including a trench formed in the main surface to penetrate the capacitor region, an insulating film covering a wall surface of the trench, and embedded electrodes embedded in the trench so as to form capacitive coupling with the capacitor region through the insulating film.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
89.
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device includes an electron transit layer composed of a nitride semiconductor, an electron supply layer formed on the electron transit layer and composed of a nitride semiconductor having a band gap that is larger than that of the electron transit layer, a gate layer formed on the electron supply layer and composed of a nitride semiconductor including an acceptor impurity, a gate electrode formed on the gate layer, and a source electrode and a drain electrode that are formed on the electron supply layer. The gate layer includes an upper surface in contact with the gate electrode. The upper surface is a Ga-polar surface.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
Provided is an igniter capable of reducing occurrence of malfunction due to noise. An igniter (100) includes a switch element (111) having a first end, a temperature sensor (112) including at least one diode and having a cathode end (112B), a switch element control device (12) configured to control the switch element, and a switch element electrode (Pe) connected to the first end of the switch element and to the cathode end, and the switch element control device has a ground electrode (Pgnd) electrically isolated from the cathode end.
F02P 7/02 - Arrangement of distributors, circuit-makers, circuit-breakers or pick-up devices for electric spark ignition of distributors
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
91.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes: two conductive members; a semiconductor element bonded to one of the two conductive members; and a relay terminal bonded to the two conductive members. The relay terminal has a first strip portion and a second strip portion that are bonded to the two conductive members, and a connecting portion that connects the first strip portion and the second strip portion. The first strip portion has a first side. The connecting portion has a first intermediate side, and a first connecting side connecting the first side and the first intermediate side. As viewed in the thickness direction, the first connecting side is located away from a first virtual intersection that is an intersection of a first virtual line overlapping with the first side and a second virtual line overlapping with the first intermediate side.
A semiconductor device includes a conductive substrate, first semiconductor elements and a first conductive member. The substrate includes an obverse surface facing in thickness direction. The first semiconductor elements, bonded to the obverse surface, have a switching function. The conductive member includes a first wiring extending in x direction orthogonal to thickness direction; a second wiring spaced from the first wiring in y direction orthogonal to thickness and x directions, extending in x direction; a third wiring connected to the first wiring and the second wiring, extending in y direction, and connected to the first semiconductor elements; a fourth wiring spaced from the third wiring in x direction, connected to the first wiring and the second wiring, and extending in y direction; and a fifth wiring between the first wiring and the second wiring in y direction and connected to the third wiring and the fourth wiring.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
93.
SOUND WAVE PROCESSING DEVICE AND ULTRASONIC SYSTEM
A burst drive signal has a sensor drive period for transmitting a first drive signal, and an interval period provided between the sensor drive periods adjacent to each other, for transmitting a second drive signal. The first drive signal has a frequency within a frequency band of a band pass filter. The second drive signal has a frequency that is different from a resonant frequency of a sensor element and is outside the frequency band of the band pass filter.
A semiconductor device is provided with: a plurality of gate trenches; a plurality of gate electrodes; a plurality of field plate electrodes; gate wiring that is connected to each gate electrode and forms a loop in plan view; first source wiring that is connected to a first end of each field plate electrode and is disposed within the loop of the gate wiring in plan view; second source wiring that is connected to a second end of each field plate electrode and is disposed outside the loop of the gate wiring in plan view; and, a connection structure. The connection structure includes a connection trench that intersects the gate wiring in plan view, and inter-source wiring embedded in the connection trench. The inter-source wiring electrically connects the first source wiring and the second source wiring.
The semiconductor device includes a semiconductor layer having an active portion and a gate finger portion, an MIS transistor formed at the active portion including a gate trench and a source region, a channel region and a drain region sequentially along a side surface of the gate trench, a plurality of first gate finger trenches arranged by an extended portion of the gate trench, a gate electrode embedded each in the gate trench and the first gate finger trench, a second conductive-type first bottom-portion impurity region formed at least at a bottom portion of the first gate finger trench, a gate finger which crosses the plurality of first gate finger trenches and is electrically connected to the gate electrode, and a second conductive-type electric field relaxation region formed more deeply than the bottom portion of the first gate finger trench between the mutually adjacent first gate finger trenches.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A liquid leakage detection system that detects a liquid includes: a liquid leakage sensor including a first detector that detects adhesion of the liquid based on a change in impedance between a first electrode and a second electrode; and a control device that acquires information including the impedance between the first electrode and the second electrode, wherein the liquid leakage sensor includes a heater that heats the first electrode and the second electrode, and wherein the control device determines whether or not liquid leakage or dew condensation has occurred based on the impedance between the first electrode and the second electrode that are in a state of being heated by the heater, and notifies the determination result.
G01M 3/16 - Investigating fluid tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means
97.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: a chip including a main surface; a first conductivity type first semiconductor region formed at least in a surface layer portion of the main surface; a trench structure including a trench formed in the main surface to be located within the first semiconductor region, and a second conductivity type polysilicon mechanically and electrically connected to the chip and located within the trench; and a second conductivity type second semiconductor region formed within the first semiconductor region along a wall surface of the trench structure and forming a pn junction, as a photodiode, with the first semiconductor region.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
98.
BUCK DC/DC CONVERTER AND CONTROLLER CIRCUIT OF BUCK DC/DC CONVERTER
Provided is a controller circuit of a buck DC/DC converter. The controller circuit includes a feedback pin to be connected to an output line of the buck DC/DC converter, a voltage divider circuit including a first resistor and a second resistor connected in series between the feedback pin and a ground, a feedback circuit that generates a pulse modulation signal to bring a feedback voltage as an output of the voltage divider circuit close to a reference voltage, and a current source that is connected to the feedback pin and supplies a constant current.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
A semiconductor device includes a terminal, a signal substrate, a supporting conductor and a bonding layer. The terminal includes an electrically conductive tubular holder and a metal pin inserted into the holder. The signal substrate includes a wiring layer and an insulating substrate. The supporting conductor supports the wiring layer via the insulating substrate. The bonding layer is interposed between the supporting substrate and the signal substrate. The insulating substrate includes an obverse surface and a reverse surface spaced apart in a thickness direction of the signal substrate. The wiring layer is disposed on the obverse surface, and the terminal is secured to the wiring layer. The holder is bonded to the wiring layer. The metal pin extends in the thickness direction. The bonding layer electrically insulates the signal substrate and the supporting conductor.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor light emitting device includes a light emitting module, a stem, and a surrounding member. The stem includes a conductive base and a conductive heat sink extending upright from the base. The light emitting module is mounted on the heat sink. The surrounding member is arranged on the base and surrounds the light emitting module and the heat sink. The light emitting module includes a substrate mounted on the heat sink, a light emitting element mounted on the substrate, and a light emitting element drive circuit mounted on the substrate. The light emitting element drive circuit includes a transistor configured to drive the light emitting element. The transistor is a vertical MOSFET mounted on the substrate.
