A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 μm to 200 μm. The particle size distribution gives a difference D90−D10 of 10 μm or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
According to one embodiment, there is provided a multielement composite oxide powder that includes an oxide particle including a composite oxide, the composite oxide containing: constituent metal elements containing two or more hexavalent metal elements and two or more pentavalent metal elements at a content of 80 atm % or more in total; and oxygen. The oxide particle has a major axis and a minor axis intersecting the major axis, and has a polygonal tunnel structure including one or more polygonal tunnels of five or more vertices in a major axis direction along the major axis.
Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided.
Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided.
Each magnetic cold storage material particle of the embodiment is composed of an intermetallic compound containing a rare earth element, and an area percentage of voids present in its cross-section is 0.0001% or more and 15% or less. Each of the cold storage device of the embodiment, the refrigerator of the embodiment, and the apparatuses provided with this refrigerator, such as a superconducting magnet, includes the magnetic cold storage material particles of the embodiment.
A bonded object production method according to an embodiment uses a continuous furnace to process a stacked body including a metal member, a ceramic member, and a brazing material layer located therebetween, while conveying the stacked body; and the method includes a process of heating the stacked body in an inert atmosphere from 200° C. to a bonding temperature at an average temperature raising rate of the stacked body of not less than 15° C./min, a process of bonding the stacked body in an inert atmosphere at the bonding temperature that is within a range of not less than 600° C. and not more than 950° C., and a process of cooling the stacked body from the bonding temperature to 200° C. at an average temperature lowering rate of the stacked body of not less than 15° C./min. A ceramic substrate is favorably a silicon nitride substrate.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/16 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
5.
TUNGSTEN WIRE, AND TUNGSTEN WIRE PROCESSING METHOD AND ELECTROLYTIC WIRE USING THE SAME
According to one embodiment, a tungsten wire includes a tungsten alloy containing rhenium. The tungsten wire includes a protrusion peak density (Spd) of 7000 or more and 11000 or less as a surface roughness parameter.
To provide an X-ray ceramic scintillator array as well as a radiation detector and a radiation inspection apparatus using the same, which prevents a resin used for a reflective layer of the scintillator array from being colored due to X-ray irradiation so as to realize a significant improvement against the output drop of the scintillator array. The resin used for the reflective layer of the X-ray ceramic scintillator array has a feature wherein a ratio of absorption intensity in a wavenumber range of 1490 cm−1 to 1750 cm−1 to absorption intensity in a wavenumber range of 2500 cm−1 to 2990 cm−1 has a value that falls within a specific range in an absorption spectrum based on Fourier transform infrared spectrometry (FT-IR).
A silicon nitride sintered body having improved wear resistance and a wear-resistant member using the silicon nitride sintered body are provided. A silicon nitride sintered body according to an embodiment includes silicon nitride crystal grains and a grain boundary phase. An average value of solid solution oxygen amounts of the silicon nitride crystal grains in a 20 μm×20 μm region at any cross section is not less than 0.2 wt %. In a 50 μm×50 μm region at any cross section, an average value of major diameters of the silicon nitride crystal grains is not less than 0.1 μm and not more than 10 μm, and an average value of aspect ratios of the silicon nitride crystal grains is not less than 1.5 and not more than 10.
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
8.
SCINTILLATOR ARRAY, METHOD FOR MANUFACTURING SCINTILLATOR ARRAY, RADIATION DETECTOR, AND RADIATION INSPECTION DEVICE
A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.
A method may produce a heat regenerating material particle, including: preparing a slurry by adding a powder of the heat regenerating substance to an alginic acid aqueous solution and mixing the powder of the heat regenerating substance and the aqueous alginic acid solution; and forming a particle by gelling the slurry by dropping the slurry into a gelling solution. The gelling solution may include a metal element including calcium (Ca), manganese (Mn), magnesium (Mg) beryllium (Be), strontium (Sr), aluminum (Al), iron (Fe), copper (Cu), nickel (Ni), and cobalt (Co). The forming may involve controlling the gelation time so that a concentration of the metal element in a first region of the particle becomes lower than a concentration of the metal element in a second region. The second region may be closer to an outer edge of the particle compared to the first region.
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
10.
METHOD FOR PRODUCING A TWO-STAGE HEAT REGENERATING CRYOGENIC REFRIGERATOR
A method may produce a two-stage heat regenerating cryogenic refrigerator including a vacuum vessel, first and second cylinder disposed in the vessel, the second cylinder coaxially connected to the first cylinder, and first and second regenerator respectively disposed in the first and second cylinder. The method may include: accommodating a first heat regenerating material (HRM) in the first regenerator; and filling a plurality of HRM particles in the second regenerator. The HRM particles may be a second HRM, each of the HRM particles including an oxide or oxysulfide heat regenerating substance having a maximum value of specific heat at a temperature of ≤20 K of 0.3+ J/cm3·K and Ca, Mn, Mg, Be, Sr, Al, Fe, Cu, Ni, and/or Co. Each of the HRM particles may include a first and second region, the second region being closer to an HRM particle outer edge than the first region.
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
11.
RHENIUM-TUNGSTEN WIRE ROD AND THERMOCOUPLE USING THE SAME
The rhenium tungsten wire rod according to an embodiment is a wire rod made of a tungsten alloy containing rhenium, wherein a rhenium content is less than 30 wt % in any measurement area of a wire rod body where a unit area is 1 μm in diameter.
H10N 10/854 - Thermoelectric active materials comprising inorganic compositions comprising only metals
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
According to the embodiment, in a method for manufacturing a ceramic circuit board in which a copper plate is bonded to at least one surface of a ceramic substrate via a brazing material layer, the brazing material layer does not include Ag, but includes Cu, Ti, and one or two of Sn or In, and a ceramic circuit board is prepared in which a portion of the brazing material layer is exposed between the patterned configuration of the copper plate. The method includes a chemical polishing process of chemically polishing the portion of the brazing material layer, and a brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant that includes one or two selected from hydrogen peroxide and ammonium peroxodisulfate and has a pH of not more than 6.
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
H05K 3/26 - Cleaning or polishing of the conductive pattern
13.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Producing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 μm×20 μm region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm−1 and not more than 1200 cm−1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm−1 and not more than 525 cm−1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm−1 and not more than 830 cm−1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm−1 and not more than 460 cm−1.
F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
14.
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm−1 to 810 cm−1 and 1340 cm−1 to 1370 cm−1, and four to six peaks are detected in ranges of 170 cm−1 to 190 cm−1, 607 cm−1 to 627 cm−1, 720 cm−1 to 740 cm−1, and 924 cm−1 to 944 cm−1.
A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 μm or more and 40 μm or less, and the second reflective layer having a film configured to reflect light.
A ceramic circuit board includes a ceramic substrate and a metal plate bonded together via a bonding layer, wherein when the ceramic circuit board is observed through a cross-section defined by a thickness direction and lateral direction of the ceramic circuit board: a side surface of the metal plate has an inclined shape; and the bonding layer has a bonding-layer protruding portion which protrudes by 20 μm or more and 150 μm or less from an edge where the bonding layer is in contact with the side surface of the metal plate. The shape and Vickers hardness of the side surface of the metal plate are controlled. The ceramic substrate is preferably a silicon nitride substrate.
A tungsten wire according to an embodiment is a tungsten wire made of a W alloy containing rhenium, and includes a mixture on at least a part of a surface thereof, the mixture contains W, C, and O as constituent elements, and taking a radial cross-sectional thickness of the mixture as A mm and a diameter of the tungsten wire as B mm, an average value of a ratio A/B of A to B is 0.3% to 0.8%.
C22C 27/04 - Alloys based on tungsten or molybdenum
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
B22F 3/14 - Both compacting and sintering simultaneously
B22F 3/24 - After-treatment of workpieces or articles
C22F 1/02 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
C22F 1/18 - High-melting or refractory metals or alloys based thereon
C25F 3/26 - Polishing of heavy metals of refractory metals
B21B 1/18 - Metal rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling wire or material of like small cross-section in a continuous process
18.
TUNGSTEN OXIDE POWDER AND ELECTROCHROMIC DEVICE USING THE SAME
According to one embodiment, provided is a tungsten oxide powder including primary particles having an average particle size of 100 nm or less. Each of the primary particles include a crystal phase and an amorphous phase coexisting in each primary particle.
C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
19.
INSULATING CIRCUIT BOARD AND SEMICONDUCTOR DEVICE IN WHICH SAME IS USED
According to an embodiment, a ceramic copper circuit board in which the reliability of bonding with a bonding layer is improved is provided, and an insulating circuit board includes an insulating substrate and a conductor part bonded to at least one surface of the insulating substrate. In XPS analysis of a nitrogen amount at the conductor part surface, an average value of the nitrogen amount at any three locations is within a range of not less than 0 at % and not more than 50 at %. In XPS analysis of the oxygen amount at the conductor part surface, the average value of the three locations is favorably within the range of not less than 3 at % and not more than 30 at %. The ratio of the nitrogen amount to the oxygen amount is favorably not less than 0 and not more than 5.
According to the embodiment, in an insulating circuit board in which a conductor part is bonded to at least one surface of an insulating substrate, in XPS analysis of the carbon amount at the surface of the conductor part, the average value of the carbon amounts at any three locations is within the range of not less than 0 at % and not more than 70 at %. In XPS analysis of the oxygen amount of the conductor part surface, it is favorable for the average value of any three locations to be within the range of not less than 3 at % and not more than 50 at %.
A ceramic ball material according to the present embodiment includes a spherical portion, and a band-shaped portion formed over a circumference of a surface of the spherical portion. The band-shaped portion has a width in a range of 0.5 mm or more and 4.0 mm or less, both shoulders of which are provided with an R section having a radius of curvature of 0.02 mm or more. Any one of aluminum oxide, silicon nitride, boron nitride, and zirconium oxide is used as the ceramic.
B28B 3/02 - Producing shaped articles from the material by using presses; Presses specially adapted therefor wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form
CERAMIC SCRIBE SUBSTRATE, CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SCRIBE SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC SUBSTRATE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
A ceramic scribe substrate according to the present embodiment includes a continuous groove having multiple grooves connected to each other formed by fiber laser irradiation on a surface portion of a scribe line shaping a ceramic substrate. The continuous groove has a depth of more than 50 μm within a range of 0.15 times or more and 0.55 times or less a thickness of the ceramic substrate.
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
23.
COLD STORAGE MATERIAL, COLD STORAGE MATERIAL PARTICLE, GRANULATED PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSING DEVICE
A cold storage material of an embodiment includes a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and a first group element of 0.001 atom % or more and 10 atom % or less, in which a maximum value of volume specific heat in a temperature range of 2 K or more and 10 K or less is 0.5 J/(cm3·K) or more.
G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
F25B 9/14 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the cycle used, e.g. Stirling cycle
F17C 6/00 - Methods or apparatus for filling vessels not under pressure with liquefied or solidified gases
24.
COLD STORAGE MATERIAL PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND METHOD FOR PRODUCING COLD STORAGE MATERIAL PARTICLE
A cold storage material particle of an embodiment includes at least one first element selected from the group consisting of a rare earth element, silver (Ag), and copper (Cu) and a second element that is different from the first element and forms a multivalent metal ion in an aqueous solution, in which an atomic concentration of the second element is 0.001 atomic % or more and 60 atomic % or less, and a maximum value of volume specific heat at a temperature of 20K or less is 0.3 J/cm3·K or more.
C09K 5/14 - Solid materials, e.g. powdery or granular
F28D 20/00 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or
G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
C04B 35/50 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
C04B 35/45 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on copper oxide or solid solutions thereof with other oxides
C04B 35/626 - Preparing or treating the powders individually or as batches
C04B 35/636 - Polysaccharides or derivatives thereof
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.
National University Corporation Nara Institute of Science and Technology (Japan)
Inventor
Usui, Daichi
Hayashi, Makoto
Yanagida, Takayuki
Kawaguchi, Noriaki
Kato, Takumi
Nakauchi, Daisuke
Kimura, Hiromi
Abstract
A ceramic scintillator according to the present embodiment has a composition represented by (Lu1-xPrx) a (Al1-yGay) bO12, wherein x, y, a, and b in the composition respectively satisfy 0.005≤x≤0.025, 0.3≤y≤0.7, 2.8≤a≤3.1, and 4.8≤b≤5.2.
A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
H01L 23/373 - Cooling facilitated by selection of materials for the device
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
28.
BONDED BODY, CERAMIC CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
According to the embodiment, a bonded body includes a ceramic substrate, a copper plate. A bonding layer is located on at least one surface of the ceramic substrate. The bonding layer bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer including titanium nitride or titanium oxide as a major component, and a plurality of first alloys positioned between the Ti reaction layer and the copper plate. Each of the plurality of first alloys includes at least one selected from a Cu—Sn alloy and a Cu—In alloy. The first alloys have mutually-different Sn concentrations or In concentrations. According to the embodiment, a warp amount can be reduced. A heating rate and a cooling rate in the bonding process can be increased. According to the embodiment, a silicon nitride substrate is favorable for the ceramic substrate.
According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
G21F 1/04 - Concretes; Other hydraulic hardening materials
C04B 28/02 - Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing hydraulic cements other than calcium sulfates
C04B 40/00 - Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
G21F 3/00 - Shielding characterised by its physical form, e.g. granules, or shape of the material
31.
BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (MTi/ME1) being 0.1 or less.
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.
According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.
C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
C04B 35/597 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon oxynitrides
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
35.
SILICON NITRIDE SINTERED BODY, WEAR-RESISTANT MEMBER USING THE SAME, AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED BODY
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
0.8≤ dA/dB≤ 1.2; and
A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:
0.8≤ dA/dB≤ 1.2; and
0.8≤ rA/rB≤ 1.2.
A silicon nitride sintered body includes at least one black portion with a major axis of 10 μm or more in a field of view with a unit area of 5 mm×5 mm, when observing an arbitrary cross-section of the silicon nitride sintered body using a metallurgical microscope. A major axis of the black portion is Preferably 500 μm or less. The number of the black portion within the field of view with a unit area of 5 mm×5 mm is preferably 2 or more and 10 or less. A segregation portion of Fe is preferably included in the black portion.
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
C09K 5/14 - Solid materials, e.g. powdery or granular
F25B 21/00 - Machines, plants or systems, using electric or magnetic effects
H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
39.
COLD STORAGE MATERIAL, REFRIGERATOR, DEVICE INCORPORATING SUPERCONDUCTING COIL, AND METHOD OF MANUFACTURING COLD STORAGE MATERIAL
A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
C09K 5/14 - Solid materials, e.g. powdery or granular
F25B 21/00 - Machines, plants or systems, using electric or magnetic effects
H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
40.
PACKAGING CONTAINER FOR TRANSPORTING CERAMIC SUBSTRATES
A packaging container for transporting ceramic substrates according to the present embodiment includes a bottom portion in a rectangular shape, and four side portions connected to four edges of the bottom portion respectively. Side protrusions having a height of 2 mm or more and protruding inward are provided on at least two opposite side portions among the four side portions. The bottom portion is provided with a bottom protrusion having a height of 2 mm or more and protruding inward.
B65D 25/10 - Devices to locate articles in containers
B65D 6/00 - Containers having bodies formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal, plastics, wood or substitutes therefor
41.
RADIATION-SCINTILLATED SHIELD AND MANUFACTURING METHOD OF RADIATION SHIELDING RESIN
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japan)
TOSHIBA MATERIALS CO., LTD. (Japan)
Inventor
Nakayama, Kohichi
Nittoh, Koichi
Sonoda, Yukio
Fukuta, Yukihiro
Abstract
According to an embodiment, a radiation-scintillated shield which attenuates an incident radiation, includes a shielding part containing an activator-added gadolinium compound as an aggregate. The activator uses the gadolinium compound as a base material and emits light when struck by the radiation. Consequently, it becomes possible to shield a γ-ray and a neutron with a thickness which is about the same as that of a conventional concrete shield of γ-ray shield, and to confirm leakage of radiation.
A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 μm in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 μm is favorably not more than 1%.
According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.
A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 μm or more and 40 μm or less, and the second reflective layer having a film configured to reflect light.
G01N 23/046 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
47.
HIGH-FREQUENCY ACCELERATION CAVITY CORE AND HIGH-FREQUENCY ACCELERATION CAVITY IN WHICH SAME IS USED
A high-frequency acceleration cavity core is a toroidal core obtained by winding an Fe-based magnetic ribbon having crystals with an average crystal grain size of 1 μm or less, in which a space factor of the Fe-based magnetic ribbon is 40% or more and 59% or less, and a μQf value at 1 MHz is 3×109 Hz or more. The average crystal grain size is preferably 0.1 μm or less. The toroidal core preferably has a portion having a gap portion from an inner diameter to an outer diameter.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 1/153 - Amorphous metallic alloys, e.g. glassy metals
C22C 38/16 - Ferrous alloys, e.g. steel alloys containing copper
C22C 38/12 - Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium or niobium
C22C 38/02 - Ferrous alloys, e.g. steel alloys containing silicon
A magnetic ribbon according to an embodiment has a crystallinity degree of 0.05 or higher and 0.4 or lower when the magnetic ribbon is subjected to XRD analysis, the magnetic ribbon being Fe—Nb—Cu—Si—B-base, and the crystallinity degree being expressed by “a peak total area of a crystalline phase”/(“a peak area of an amorphous phase”+“the peak total area of the crystalline phase”). Also, the magnetic ribbon is preferred to have a region in which a KIKUCHI pattern is detected when the crystalline phase is subjected to EBSD analysis. Also, the thickness of the magnetic ribbon is preferred to be 25 μm or less.
A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.
According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.
C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
51.
Ceramic copper circuit board and method for manufacturing the same
A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 μm and not more than 200 μm. The contact angle between the first jutting portion and the first sloped portion is 65° or less.
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
52.
Ceramic Copper Circuit Board And Method For Manufacturing The Same
A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 μm and not more than 200 μm. The contact angle between the first jutting portion and the first sloped portion is 65° or less.
H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
53.
CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE USING SAME
A ceramic copper circuit board including a ceramic substrate, and a copper circuit part located on the ceramic substrate, wherein an arbitrary line parallel to a first direction at a cross section of the copper circuit part parallel to the first direction crosses multiple copper crystal grains, the first direction is from the ceramic substrate toward the copper circuit part, an average of multiple distances in a second direction between the line and edges of the copper crystal grains is not more than 300 μm, and the second direction is perpendicular to the first direction.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
54.
TUNGSTEN OXIDE POWDER AND METHOD FOR PRODUCING TUNGSTEN OXIDE POWDER
According to one embodiment, a tungsten oxide powder is provided. The tungsten oxide has an average particle size along a major axis of 10 μm or less, an average aspect ratio of 10 or less, and 0 to 4 crystal defects per unit area of 9 nm2 on a surface or sectional surface in a direction of a minor axis of a primary particle.
A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.
A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
A refrigerator is provided, including rare earth cold accumulating material particles filled in a cold accumulating vessel. The rare earth cold accumulating material particles are a rare earth oxide or a rare earth oxysulfide. The rare earth cold accumulating material particles define a sintered body. An average crystal grain size of the sintered body is 0.5 to 5 μm, a porosity of the sintered body is 10 to 50 vol. %, and an average pore size of the sintered body is 0.3 to 3 μm. In an arbitrary cross-section of the rare earth cold accumulating material particles, a number of pores per a unit area of 10 μm×10 μm is 20 to 70.
C09K 5/14 - Solid materials, e.g. powdery or granular
F04B 37/08 - Pumps specially adapted for elastic fluids and having pertinent characteristics not provided for in, or of interest apart from, groups for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
C01F 17/206 - Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
F25B 29/00 - Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
F25D 29/00 - Arrangement or mounting of control or safety devices
A Co-based amorphous magnetic thin strip for a magnetic sensor is disclosed. The Co-based amorphous magnetic thin strip has a width W equal to or smaller than 1 mm, a length L between 6 mm and 100 mm inclusive, a ratio L/W between 20 and 1000 inclusive, a strip thickness t between 10 μm and 28 μm inclusive, and a cross section of a rectangle or a trapezoid.
C01B 21/072 - Binary compounds of nitrogen with metals, with silicon, or with boron with aluminium
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/373 - Cooling facilitated by selection of materials for the device
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 24/04 - Impact or kinetic deposition of particles
C23C 14/28 - Vacuum evaporation by wave energy or particle radiation
H05B 3/06 - Heater elements structurally combined with coupling elements or with holders
H05B 3/84 - Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
60.
Sliding Member, And Bearing, Motor, And Drive Device Using The Same
The sliding member according to the embodiment includes a silicon nitride sintered body that includes silicon nitride crystal grains and a grain boundary phase, in which a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 10%. The percentage is more preferably not less than 0% and not more than 3%.
F16C 19/02 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows
H02K 5/173 - Means for supporting bearings, e.g. insulating supports or means for fitting bearings in the bearing-shields using bearings with rolling contact, e.g. ball bearings
H02K 11/33 - Drive circuits, e.g. power electronics
61.
Rare earth regenerator material particle, rare earth regenerator material particle group, and cold head, superconducting magnet, examination apparatus, and cryopump using the same
A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.
C09K 5/14 - Solid materials, e.g. powdery or granular
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C22C 1/047 - Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
C09K 5/08 - Materials not undergoing a change of physical state when used
F17C 5/00 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases
A friction stir welding tool member according to the present embodiment has a shoulder portion and a probe portion concentrically projecting from an upper surface of the shoulder portion. The shoulder portion includes a curved surface processed portion that is curved to have a curved shape on an outer peripheral edge of the shoulder portion. A space occupancy occupied by the two-dimensional space in which neither the shoulder portion nor the probe portion exists is in a range of 30% to 70%, the space occupancy being determined based on a projection drawing of a side surface region surrounded from a tip of the probe portion to the curved surface processed portion of the shoulder portion.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
63.
LIGHT SOURCE FOR MYOPIA PREVENTION ARTICLE AND METHOD OF USING LIGHT SOURCE FOR MYOPIA PREVENTION ARTICLE
A light source for myopia prevention article includes a light emitter to emit light having an emission spectrum continuing from a first wavelength of not less than 360 nm nor more than 400 nm to a second wavelength of more than 400 nm.
A61F 9/00 - Methods or devices for treatment of the eyes; Devices for putting in contact-lenses; Devices to correct squinting; Apparatus to guide the blind; Protective devices for the eyes, carried on the body or in the hand
F21S 2/00 - Systems of lighting devices, not provided for in main groups or , e.g. of modular construction
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
64.
Fluorescent screen, x-ray detector, and x-ray inspection apparatus
G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
65.
Photon counting radiation detector and radiographic inspection device using the same
In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.
A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 μm to 200 μm. The particle size distribution gives a difference D90−D10 of 10 μm or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 μm and not more than 200 μm. The contact angle between the first jutting portion and the first sloped portion is 65° or less.
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
70.
Cold head, superconducting magnet, examination apparatus, and cryopump
A reduction in a permeability of refrigerant gas is suppressed while increasing a filling factor of regenerator material particles with respect to a stage of a cold head. A cold head includes a stage including regenerator material particle groups, and a metal mesh material partitioning the regenerator material particle groups. The metal mesh material has quadrangular mesh holes each having a length of a long side of 1/10 or more and ½ or less of each of average particle sizes of the regenerator material particle groups.
F25B 9/14 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the cycle used, e.g. Stirling cycle
F25D 25/00 - Charging, supporting, or discharging the articles to be cooled
C09K 5/14 - Solid materials, e.g. powdery or granular
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
71.
Antibacterial material and antibacterial film and antibacterial member using the same
Heat regenerating material particle, regenerator, refrigerator, superconducting magnet, nuclear magnetic resonance imaging device, nuclear magnetic resonance device, cryopump, and single-crystal pulling device of magnetic-field application type
3·K or more, and one metal element selected from the group consisting of calcium (Ca), magnesium (Mg), beryllium (Be), strontium (Sr), aluminum (Al), iron (Fe), copper (Cu), nickel (Ni), and cobalt (Co). The heat regenerating material particle includes a first region and a second region, the second region is closer to an outer edge of the heat regenerating material particle than the first region, and the second region has a higher concentration of the metal element than the first region.
F28D 17/02 - Regenerative heat-exchange apparatus in which a stationary intermediate heat-transfer medium or body is contacted successively by each heat-exchange medium, e.g. using granular particles using rigid bodies, e.g. of porous material
F28D 19/04 - Regenerative heat-exchange apparatus in which the intermediate heat-transfer medium or body is moved successively into contact with each heat-exchange medium using rigid bodies, e.g. mounted on a movable carrier
C09K 5/14 - Solid materials, e.g. powdery or granular
73.
Component and apparatus of manufacturing semiconductor
A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A≤B1≤1.2A, 0.8A≤B2≤1.2A, and 0.8A≤B3≤1.2A.
C23C 14/28 - Vacuum evaporation by wave energy or particle radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
A ceramic circuit board comprises: a ceramic substrate with a 1.0 mm thickness or less including a first surface and a second surface, the first surface including a first area and a second area; a first metal plate joined to the first area; and a second metal plate joined to the second surface. The second area has a first waviness profile along a first side of the first surface, the first waviness profile having one extreme value or less. The second area has a second waviness profile along a second side of the first surface, the second waviness profile has not less than two nor more than three extreme values.
According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.
H05K 3/26 - Cleaning or polishing of the conductive pattern
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
C09K 13/00 - Etching, surface-brightening or pickling compositions
C09K 13/04 - Etching, surface-brightening or pickling compositions containing an inorganic acid
The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
C22F 1/10 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
C22F 1/18 - High-melting or refractory metals or alloys based thereon
The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
C22F 1/10 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
C22F 1/18 - High-melting or refractory metals or alloys based thereon
C04B 35/597 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon oxynitrides
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
80.
NANO METAL COMPOUND PARTICLES, COATING MATERIAL AND FILM USING THE SAME, METHOD FOR PRODUCING FILM, AND METHOD OF PRODUCING NANO METAL COMPOUND PARTICLES
According to one embodiment, nano metal compound particles are provided. The nano metal compound particles have an average particle size of 50 nm or less. The nano metal compound particles have a peak ωt of 2.8 eV or less. The peak ωt corresponds to a resonant frequency of an oscillator according to a spectroscopic ellipsometry method fitted to a Lorentz model.
According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.
H01L 31/108 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
G01T 1/24 - Measuring radiation intensity with semiconductor detectors
H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01L 31/0312 - Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
G01N 23/083 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
A61B 6/00 - Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
G01N 23/046 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
82.
Thermoelectric material, manufacturing method of thermoelectric material, thermoelectric conversion element, and thermoelectric conversion module
According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.
B22F 3/24 - After-treatment of workpieces or articles
B22F 9/04 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.
To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
85.
Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element
According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.
2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
Rare earth regenerator material particle, rare earth regenerator material particle group, and cold head, superconducting magnet, examination apparatus, and cryopump using the same
A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.
C09K 5/14 - Solid materials, e.g. powdery or granular
C22C 1/04 - Making non-ferrous alloys by powder metallurgy
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C09K 5/08 - Materials not undergoing a change of physical state when used
F17C 5/00 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases
According to one embodiment, an illumination device includes a plurality of light emitting elements and a plurality of reflectors. The plurality of reflectors include at least one first reflector and at least one second reflector. The first reflector is provided corresponding to the first region at the center and is provided so that the corresponding light emitting element is positioned within a focal region in the vicinity of a focal point. The second reflector is provided corresponding to the second region, has an angular eccentricity so as to collect light on one region on the optical axis, and is provided so as to be positioned within a margin region in which one of the corresponding light emitting elements is provided at a position farther away than a second focal region in the vicinity of the focal point.
It is an object to provide a tungsten alloy exhibiting characteristics equal to or higher in characteristics than those of a thorium-containing tungsten alloy, without using thorium which is a radioactive material, and a discharge lamp, a transmitting tube, and a magnetron using the tungsten alloy. According to the present invention, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
H01J 23/05 - Cathodes having a cylindrical emissive surface, e.g. cathodes for magnetrons
H01J 61/073 - Main electrodes for high-pressure discharge lamps
90.
Ceramic copper circuit board and semiconductor device based on the same
According to one embodiment, a ceramic copper circuit board a ceramic substrate, a copper circuit board provided at one surface of the ceramic substrate. A ratio of a thickness of the copper circuit board to a thickness of the ceramic substrate is 1.25 or more. A number of grain boundaries is not less than 5 and not more than 250 along every 10-mm straight line drawn in a front surface of the copper circuit board.
H05K 1/09 - Use of materials for the metallic pattern
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
91.
Rare-earth regenerator material particles, and group of rare-earth regenerator material particles, refrigerator and measuring apparatus using the same, and method for manufacturing the same
Provided is a group of rare-earth regenerator material particles having an average particle size of 0.01 to 3 mm, wherein the proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, and the proportion of particles having a depressed portion having a length of 1/10 to ½ of a circumferential length on a particle surface is 30% or more by number. By forming the depressed portion on the surface of the regenerator material particles, it is possible to increase permeability of an operating medium gas and a contact surface area with the operating medium gas.
C09K 5/08 - Materials not undergoing a change of physical state when used
B22F 9/10 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying using centrifugal force
C09K 5/14 - Solid materials, e.g. powdery or granular
B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
F25B 9/14 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the cycle used, e.g. Stirling cycle
G01R 33/38 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
G01R 33/3815 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field using electromagnets with superconducting coils, e.g. power supply therefor
B23P 15/26 - Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers
C09K 5/04 - Materials undergoing a change of physical state when used the change of state being from liquid to vapour or vice-versa
92.
Scintillator array, method of manufacturing scintillator array, radiation detector, and radiation inspection device
A scintillator array includes a first scintillator element, a second scintillator element, and a reflector provided between the first and second scintillator elements and having a width of 80 μm or less therebetween. Each scintillator element includes a polycrystal containing a rare earth oxysulfide phosphor, the polycrystal having a radiation incident surface of 1 mm or less×1 mm or less in area. An average crystal grain diameter of the polycrystal is not less than 5 μm nor more than 30 μm, the average crystal grain diameter being defined by an average intercept length of crystal grains in an observation image of the polycrystal with a scanning electron microscope. A maximum length or a maximum diameter of defects on the polycrystal is 40 μm or less.
G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
H01L 49/00 - Solid state devices not provided for in groups and and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
94.
Friction stir welding tool member, friction stir welding apparatus using the same, and friction stir welding method
The friction stir welding tool member according to the present invention is made of a ceramic member in which a shoulder portion and a probe portion are integrally formed, wherein a root portion of the probe portion and an end portion of the shoulder portion have a curved surface shape; and the friction stir welding tool member has a ratio (R1/D) of 0.02 or more and 0.20 or less when a curvature radius of the end portion of the shoulder portion is defined as R1 (mm) and an outer diameter of the shoulder portion is defined as D (mm). In addition, the ceramic member is preferably made of a silicon nitride sintered body having a Vickers hardness of 1400 HV1 or more. According to the above-described configuration, a friction stir welding tool member having excellent durability can be provided.
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
95.
Friction stir welding tool member made of silicon nitride sintered body, and friction stir welding apparatus using the same
The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.
B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
A ceramic circuit board comprises: a ceramic substrate with a 1.0 mm thickness or less including a first surface and a second surface, the first surface including a first area and a second area; a first metal plate joined to the first area; and a second metal plate joined to the second surface. The second area has a first waviness profile along a first side of the first surface, the first waviness profile having one extreme value or less. The second area has a second waviness profile along a second side of the first surface, the second waviness profile has not less than two nor more than three extreme values.
The present invention provides a ceramic circuit board comprising: a ceramic substrate; and at least one of a recess and a through-hole formed in the ceramic substrate, wherein a conductive portion filled with a conductor is provided in the recess or the through-hole, the surface roughness Ra is 1.0 μm or less, and the maximum height Rz is 100 μm or less. It is preferable that the maximum height Rz is 10 μm or less. Further, it is preferable that the surface roughness Ra is 0.5 μm or less. According to the above-described configuration, it is possible to provide a ceramic circuit board having an excellent positionability of the conductive portion for mounting a semiconductor element.
The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 μm; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 μm. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.
C09K 5/14 - Solid materials, e.g. powdery or granular
F04B 37/08 - Pumps specially adapted for elastic fluids and having pertinent characteristics not provided for in, or of interest apart from, groups for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
C01F 17/206 - Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
F25B 29/00 - Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
F25D 29/00 - Arrangement or mounting of control or safety devices
The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 μm; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 μm. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 μm or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.
C09K 5/14 - Solid materials, e.g. powdery or granular
F04B 37/08 - Pumps specially adapted for elastic fluids and having pertinent characteristics not provided for in, or of interest apart from, groups for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
C01F 17/206 - Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
F25B 29/00 - Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
F25D 29/00 - Arrangement or mounting of control or safety devices
patents
