Abstract

35.327.033.935.327.033.927.027.0 ≤ 1.0 are satisfied.

IPC Classes  ?

• C04B 35/596 - Composites
• C04B 35/64 - Burning or sintering processes
• F16C 33/24 - Brasses; Bushes; Linings with different areas of the sliding surface consisting of different materials
• F16C 33/32 - Balls
• H05K 1/03 - Use of materials for the substrate

Abstract

A ceramic substrate according to one embodiment is characterized in that the ratio A/B of an arc discharge voltage A to a dielectric breakdown voltage B is at least 0.3, in a case where a 50 Hz or 60 Hz alternating-current voltage is applied between the front surface and the rear surface of the ceramic substrate at a voltage rise speed of 200 V/s, and the arc discharge voltage A (kV) obtained by detecting an arc discharge is measured and the dielectric breakdown voltage B (kV) between the front surface and the rear surface is measured in accordance with IEC 672-2. In any cross-section of the ceramic substrate, it is preferable that there be a 90 μｍ × 120 μm region in which the number of first voids having a surface area of less than 1 μm2is within the range of 30 to 500, and the number of second voids having a surface area of at least 1 μm2 is within the range of 0 to 30.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/15 - Ceramic or glass substrates
• H05K 1/03 - Use of materials for the substrate

Abstract

A crystal phase information extraction device according to an embodiment of the present invention has a first estimation unit and a second estimation unit. The first estimation unit estimates first crystal phase information relating to a first polycrystalline material. The second estimation unit repeatedly optimizes, using the first crystal phase information, diffraction data that is acquired from a second polycrystalline material in which the component ratio of a crystal phase of interest is lower than that in the first polycrystalline material, and estimates second crystal phase information relating to the second polycrystalline material.

IPC Classes  ?

• G01N 23/2055 - Analysing diffraction patterns

Abstract

The flat wafer made of sintered silicon nitride is characterized in that at least one surface thereof has an average value of the average length RSm of a plurality of roughness curve elements, having a plurality of line segments passing through the center of that surface as the reference length, within the range from 100 μm to 350 μm. Also, each of the average length RSm of the plurality of roughness curve elements is preferably within the range from 10 μm to 800 μm. Also, the average value of the maximum valley depth Rv of a plurality of roughness curves, having a plurality of line segments passing through the center of the surface as the reference length, is preferably within the range from 0.04 μm to 0.4 μm.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• H01L 23/15 - Ceramic or glass substrates

Abstract

Provided is a fluorescent plate configured to convert X-rays to visible light, the fluorescent plate having a first layer, a second layer, and a phosphor-containing third layer disposed between the first layer and the second layer, wherein the phosphor comprises europium-activated barium fluorochloride, the weight of the phosphor is 300 mg/cm2to 600 mg/cm2, and the first layer and the second layer each have a total light transmittance of at least 70% at the 380 nm emission wavelength of the phosphor.

IPC Classes  ?

• C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
• C09K 11/61 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
• G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
• G01N 23/203 - Measuring back scattering

Abstract

A material for a ceramic ball according to the present embodiment is characterized in that a deviation from spherical form is 2% or less, and an arithmetic mean roughness Ra is 0.2 μm to 2 μm inclusive. Moreover, in the material for a ceramic ball, a maximum cross-sectional height Rt is preferably 4 μm to 20 μm inclusive. Furthermore, in the material for a ceramic ball, Ra1/Ra2 is preferably 0.2 to 2, where Ra1 is the surface roughness Ra in a circumferential direction of a belt-like mark, and Ra2 is the surface roughness Ra of a circumference in a direction perpendicular to the belt-like mark.

IPC Classes  ?

• F16C 33/32 - Balls
• B24B 11/02 - Machines or devices designed for grinding spherical surfaces or parts of spherical surfaces on work; Accessories therefor for grinding balls
• C04B 35/10 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
• C04B 35/48 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zirconium or hafnium oxides or zirconates or hafnates
• C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride

Abstract

Provided is a ceramic circuit board that is capable of suppressing a decrease in conductivity of a copper plate while maintaining bonding strength. A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer that bonds the ceramic substrate and the copper plate. The bonding layer contains Ag, Cu, an active metal, and a first element. The first element is one or two selected from Sn and In. As determined by SEM-EDX analysis of an arbitrary cross section, when a point at which a detection amount of Cu is not less than 80 mass% and at which a change in slope in a graph of the detection amount of Cu is the largest is assumed to be a first measurement point, a detection amount of the first element (mass%)/a detection amount of Ag (mass%) at the first measurement point is within the range of 0-0.4. The detection amount of the first element (mass%)/the detection amount of Ag (mass%) at the first measurement point is preferably within the range of 0.05-0.2.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
• H05K 1/03 - Use of materials for the substrate

Abstract

Provided are: a ceramic copper circuit board in which the average length RSm of the roughness curve element on the surface of a copper member is controlled; and a semiconductor device using same. A ceramic copper circuit board according to an embodiment of the present invention comprises a ceramic substrate and a copper member bonded to one surface of the ceramic substrate. When the average length RSm of the roughness curve element is measured at each of five arbitrary points selected from the surface of the copper member, the average value of the five average lengths RSm is 40-250 μm.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/15 - Ceramic or glass substrates

Abstract

A ceramic substrate according to the embodiments is characterized by having two or more peaks in the 98-106 eV range in a spectrum obtained by measuring a laser irradiation region of a laser machining surface via XPS. Also provided are a ceramic circuit substrate and a semiconductor device comprising the ceramic substrate, and manufacturing methods for the ceramic circuit substrate and a ceramic divided substrate.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/15 - Ceramic or glass substrates
• H05K 1/02 - Printed circuits - Details
• H05K 1/03 - Use of materials for the substrate
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits

Abstract

A material for a ceramic ball according to an embodiment of the present invention comprises a spherical part and a band-shaped part formed over the circumference of the surface of the spherical part. Rab/Rap, which is the ratio of the arithmetic average roughness Rab of the band-shaped part to the arithmetic average roughness Rap that is an extreme of the spherical part, is 0.7-1.0. Any substance from among aluminum oxide, silicon nitride, silicon carbide, boron nitride, and zirconium oxide can be applied for the ceramic. A ceramic ball is produced by performing a polishing process on the material for a ceramic ball.

IPC Classes  ?

• F16C 33/32 - Balls
• C04B 35/111 - Fine ceramics
• C04B 35/569 - Fine ceramics
• C04B 35/587 - Fine ceramics

Abstract

Provided is a ceramic circuit substrate having a favorable adhesion with a mold resin. A ceramic circuit substrate according to an embodiment of the present invention comprises a ceramic substrate and a plurality of metal parts. The ceramic substrate has a first surface. The plurality of metal parts are respectively provided in a plurality of first regions of the first surface. The first surface has a second region positioned between the adjacent first regions. The average length RSm of roughness curve elements in the second region is 40 μm or more. The average length RSm is preferably 100 μm or less. The maximum peak height Rp of the roughness curve for the surface in the second region is preferably 1.0 μm or more. The maximum valley depth Rv of the roughness curve for the surface in the second region is preferably 1.0 μm or more.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/02 - Printed circuits - Details
• H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
• H05K 3/28 - Applying non-metallic protective coatings

Abstract

A ceramic circuit substrate according to an embodiment comprises: a ceramic substrate; a metal circuit; and a metal member. The metal circuit is provided on one surface of the ceramic substrate. The thickness of the metal circuit is 1 mm or more. The metal member is provided on the other surface of the ceramic substrate. The thickness of the metal member is 1 mm or more. The ratio Vf/Vb of a total volume Vf of the metal circuit to a total volume Vb of the metal member is 0.80-1.20.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H05K 1/02 - Printed circuits - Details

Abstract

A ceramic circuit board according to an embodiment comprises a ceramic substrate and metal sheets joined to either surface of the ceramic substrate. At least one of the metal sheets joined to either surface of the ceramic substrate is a cooling path metal sheet having a cooling path part. The thickness of the ceramic substrate is preferably less than the thickness of the cooling path metal sheet. It is preferable that the ceramic substrate comprises a first ceramic substrate and a second ceramic substrate which is joined to a metal sheet joined to the first ceramic substrate, wherein one surface of the second ceramic substrate is joined to a cooling path metal sheet joined to the first ceramic substrate, and a metal sheet is joined to the other surface of the second ceramic substrate.

IPC Classes  ?

• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H05K 1/02 - Printed circuits - Details
• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating

Abstract

A boron nitride plate surface treatment method according to an embodiment comprises a first polishing step and a second polishing step. In the first polishing step, a surface of a boron nitride plate is polished using a first polishing member having a grit in the range of F120 to F220 inclusive, or #240 to #320 inclusive. In the second polishing step, said surface of the boron nitride plate is polished using a second polishing member having a grit in the range of #360 to #1000 inclusive. The second polishing step is performed after the first polishing step. The boron nitride plate is suitable for a method for manufacturing a silicon nitride substrate. In the first polishing step, a pressing amount of the first polishing member preferably lies in the range of 0.2 mm to 1.0 mm inclusive, and a processing point speed preferably lies in the range of 80 mm/s to 180 mm/s inclusive.

IPC Classes  ?

• B24B 1/00 - Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
• B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
• B28B 11/08 - Apparatus or processes for treating or working the shaped articles for reshaping the surface, e.g. smoothing, roughening, corrugating, making screw-threads
• C04B 35/583 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on boron nitride
• C04B 35/587 - Fine ceramics
• C04B 35/64 - Burning or sintering processes

Abstract

A material for a ceramic ball according to an embodiment of the present invention comprises a spherical part and a band-form part formed over the circumference of the surface of the spherical part. Rtb/Rts, which is the ratio of the maximum cross-sectional height Rtb of a roughness curve pertaining to the outer peripheral surface of the band-form part and the roughness maximum cross-sectional height Rts pertaining to the outer peripheral surface of the spherical part, is 1.0 or greater. Any diameter of the spherical part is preferably 0.5 mm or greater. Additionally, the material for the ceramic ball preferably contains any one of aluminum oxide, silicon nitride, silicon carbide, boron nitride, and zirconium oxide.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• C04B 35/111 - Fine ceramics
• C04B 35/569 - Fine ceramics

Abstract

33) at locations in which the ceramic substrate is present when seen from the obverse surface is greater than 90 degrees.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape

Abstract

444 ions on the wire surface/the weight of the alloy wire, is no more than 10 mass ppm. A medical needle and a probe pin according to an embodiment use the rhenium tungsten alloy wire according to the embodiment.

IPC Classes  ?

• C25F 3/16 - Polishing
• A61B 17/06 - Needles; Holders or packages for needles or suture materials
• C22C 27/04 - Alloys based on tungsten or molybdenum
• C25F 3/26 - Polishing of heavy metals of refractory metals
• G01R 1/067 - Measuring probes

Abstract

A rhenium-tungsten alloy wire according to an embodiment is formed of a tungsten alloy containing rhenium, in which, in an arbitrary measurement area in which a unit area on the wire surface is 50 µm in diameter, a ratio W/Re between an atomic concentration (atm%) of tungsten (W) and an atomic concentration (atm%) of rhenium (Re) obtained by the XPS analysis is 2.5 or greater. The rhenium-tungsten alloy wire according to the embodiment is used in a medical needle according to an embodiment.

IPC Classes  ?

• C25F 3/16 - Polishing
• A61B 17/06 - Needles; Holders or packages for needles or suture materials
• C22C 27/04 - Alloys based on tungsten or molybdenum
• C25F 3/26 - Polishing of heavy metals of refractory metals
• G01R 1/067 - Measuring probes

Abstract

Provided are a silicon nitride sintered body having improved wear resistance and a wear-resistant member in which the silicon nitride sintered body is used. A silicon nitride sintered body according to an embodiment of the present embodiment comprises silicon nitride crystal grains and a grain boundary phase. In a 20 µm × 20 µm region of an arbitrary cross-section, the average value of the amount of solute oxygen in the silicon nitride crystal grains is 0.2 wt% or more. In a 50 µm × 50 µm region of an arbitrary cross-section, the average value of the major axis of the silicon nitride crystal grains is from 0.1 µm to 10 µm, and the average value of the aspect ratio of the silicon nitride crystal grains is from 1.5 to 10.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls
• F16C 33/34 - Rollers; Needles

Abstract

This tungsten oxide paint for an electrochromic element is a paint for forming a tungsten oxide thin film having electrochromic properties, the paint being characterized by comprising a solvent, tungsten oxide nanoparticles dispersed in the solvent, and a binder, wherein: in the tungsten oxide nanoparticles, a half maximum full-width of the peak detected at 29°±1° as measured by the X-ray diffraction analysis (2θ) is at most 2°; and tungsten oxide nanoparticles have a primary particle size of 5-25 nm.

IPC Classes  ?

• G02F 1/1524 - Transition metal compounds
• G02F 1/1516 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising organic material

Abstract

A cold storage material according to an embodiment comprises: a rare earth oxysulfide including a rare earth element; a garnet-type rare earth oxide including a rare earth element and Al; and aluminum oxide, wherein the ratio of an X-ray diffraction peak intensity of the garnet-type rare earth oxide to an X-ray diffraction peak intensity of the rare earth oxysulfide is 0.1% to 40%.

IPC Classes  ?

• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• C09K 5/14 - Solid materials, e.g. powdery or granular

Abstract

According to an embodiment of the present invention, a ceramic scribe substrate comprises, on the surface side of a scribe line for forming a ceramic substrate of a ceramic circuit substrate to which a metal circuit is joined, a continuous groove in which a plurality of grooves are connected by irradiation with a fiber laser. The depth of the continuous groove is more than 40 [μm], and falls within the range of 0.15-0.5 times the thickness of the ceramic substrate.

IPC Classes  ?

• H05K 1/02 - Printed circuits - Details
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/15 - Ceramic or glass substrates
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits

Abstract

This ceramic ball storage tray includes a storage part for storing a ceramic ball. The storage part of the ceramic ball storage tray includes a protruding part configured such that the center of a bottom surface of the storage part is hollow. Furthermore, the height of an outer peripheral surface of the protruding part relative to the diameter of the ceramic ball is within the range of 0.05-0.30. It is preferred that the height of the storage part relative to the diameter of the ceramic ball be within the range of 1.05-2.00. It is also preferred that the height of an inner peripheral surface of the protruding part relative to the diameter of the ceramic ball be within the range of 0.01-0.10.

IPC Classes  ?

• B65D 85/00 - Containers, packaging elements or packages, specially adapted for particular articles or materials
• B65D 1/36 - Trays or like shallow containers with moulded compartments or partitions
• B65D 85/58 - Containers, packaging elements or packages, specially adapted for particular articles or materials for ball bearings, washers, buttons or like spherical or disc-shaped articles
• C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
• F16C 33/32 - Balls
• F16C 33/34 - Rollers; Needles

Abstract

A ceramic copper circuit board according to one embodiment of the present invention is provided with: a ceramic substrate; and a copper circuit part that is bonded to at least one surface of the ceramic substrate, with a brazing material layer being interposed therebetween. The brazing material layer contains Cu, Ti, and one or two elements that are selected from among Sn and In. The brazing material layer comprises: a bonding part that is provided between the ceramic substrate and the copper circuit part; and a first protrusion part that is provided around the bonding part, and has a titanium content within the range from 70% by mass to 100% by mass. It is preferable that the sum of the titanium content and the nitrogen content in the first protrusion part is within the range from 99% by mass to 100% by mass.

IPC Classes  ?

• H05K 1/03 - Use of materials for the substrate
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape

Abstract

The material for a ceramic ball according to an embodiment of the present invention has a spherical surface section and a band-shaped section that is formed in the shape of a band. The material for a ceramic ball is characterized by having a roundness C in the range of more than 0% but not more than 2.5%, where C represents a roundness as observed from the height direction of the band-shaped section. When the material for a ceramic ball is subjected to a grinding process, the durability of the sharpening stone can be improved. In addition, at least one of aluminum oxide, silicon nitride, boron nitride, and zirconium oxide is applicable as the ceramic.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls

Abstract

A magnetic component 8 of an embodiment has a hollow container 1 made of resin in which a doughnut-shaped magnetic core 5 is housed, wherein the resin of which the hollow container 1 is formed exhibits a white to gray color having a chromatic value C of 0 (achromatic) to 2 inclusive, and a lightness V of 8 or more as defined by JIS Z8721: "Colour specification − Specification according to their three attributes". Further, the hollow container 1 has a structure comprising an inner wall portion 2 formed so as to create a hollow portion 4, an outer wall portion 3 formed so as to surround the inner wall portion 2, and a bottom portion 6 provided at one end of each of the inner wall portion 2 and the outer wall portion 3 so as to close a space between the inner wall portion 2 and the outer wall portion 3, wherein the doughnut-shaped magnetic core 5 is housed in the space between the inner wall portion 2 and the outer wall portion 3.

IPC Classes  ?

• H01F 17/06 - Fixed inductances of the signal type with magnetic core with core substantially closed in itself, e.g. toroid
• H01F 27/25 - Magnetic cores made from strips or ribbons
• H01F 27/26 - Fastening parts of the core together; Fastening or mounting the core on casing or support

Abstract

A friction stir welding tool member including a shoulder portion and a probe portion has a helical recessed/protruding portion having peak portions and valley portions on a side circumferential surface of the probe portion. Furthermore, in a cross section through an axis of rotation of the probe portion of the friction stir welding tool member, a difference ratio of the area of parts of the valley portions that are adjacent to one another along an axis parallel to the axis of rotation, among the valley portions, lies in a range of 5% or more to 30% or less. Further, it is preferable that a difference between pitches of parts of the peak portions that are adjacent to one another along the axis parallel to the axis of rotation of the probe portion, among the peak portions, lies in a range of 0.01 mm or more to 0.2 mm or less. Further, it is preferable that a difference between depths of the parts of the peak portions that are adjacent to one another along the axis parallel to the axis of rotation of the probe portion, among the valley portions, lies in a range of 0.01 mm or more to 0.1 mm or less.

IPC Classes  ?

• B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding

Abstract

Granular particles for cold storage material particles of an embodiment of the present invention contain: a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, or a rare earth oxide containing at least one of the above-mentioned rare earth elements; and carbon having a concentration of 0.001 wt% to 50 wt%. The relative density of said granular particles is 10% to 50%.

IPC Classes  ?

• C09K 5/02 - Materials undergoing a change of physical state when used
• C09K 5/14 - Solid materials, e.g. powdery or granular

Abstract

The highly thermally conductive silicon nitride sintered compact according to an embodiment comprises silicon nitride crystal grains and a grain boundary phase. The silicon nitride sintered compact has a heat conductivity of 80 W/(m·K) or more. The average value of solute oxygen levels in the silicon nitride crystal grains present in a unit surface area of 20 μm × 20 μm in an arbitrary cross-sectional surface is 0.2 wt% or less. The average value of major axis diameters of the silicon nitride crystal grains present in a unit surface area of 50 μm × 50 μm in an arbitrary cross-sectional surface is 1 to 10 μm inclusive. The average value of aspect ratios of the silicon nitride crystal grains present in the unit surface area of 50 μm × 50 μm is 2 to 10 inclusive.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• H05K 1/03 - Use of materials for the substrate

Abstract

The present invention provides: a tungsten wire which is improved in terms of the occurrence of a crack during a wire thinning process by controlling the crystal orientation in a median wire (that has a wire diameter of 0.3 to 1.2 mm); a tungsten wire processing method which uses this tungsten wire; and an electrolysis wire. A tungsten wire according to one embodiment of the present invention is formed of a tungsten alloy that contains rhenium; if a unit area (40 µm × 40 µm) of a cross section in the wire radial direction that is perpendicular to the wire drawing direction, the unit area being at a position that is concentrically within 100 µm from the central axis, is subjected to an EBSD analysis, the proportion of the area occupied by crystal orientations having a misorientation of 15° or less from <101> that is parallel to the wire drawing direction on the IPF map is 70% to 90% of the measurement field of view.

IPC Classes  ?

• C22C 27/04 - Alloys based on tungsten or molybdenum
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/18 - High-melting or refractory metals or alloys based thereon

Abstract

A rubber die for cold isotropic pressure molding according to one embodiment of the present invention has a plate-like shape and is for use in performing a cold isotropic pressure molding process on a molded article. Said rubber die is provided with one or more substantially cylindrical holes formed in at least one surface thereof. In this rubber die, a/b<2.0 is satisfied, where a represents the diameter of the opening of the holes, and b represents the maximum depth of the holes.

IPC Classes  ?

• B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
• B28B 3/00 - Producing shaped articles from the material by using presses; Presses specially adapted therefor
• B30B 5/02 - Presses characterised by the use of pressing means other than those mentioned in groups and wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
• C04B 35/111 - Fine ceramics
• C04B 35/486 - Fine ceramics
• C04B 35/587 - Fine ceramics

Abstract

The purpose of the present invention is to provide: a multicomponent system complex oxide powder that has high thermal stability, high capacity, high reversible reaction speed of the electrochromic property thereof, and a high catalyst activity; an electrochemical device and a catalyst using the powder; and a method for producing the multicomponent system complex oxide powder.　The present invention provides a multicomponent system complex oxide powder that includes oxide particles containing a complex oxide that includes oxygen and compositional metal elements including, at a content proportion of a total of 80 atm% or more, two or more types of hexavalent metal elements and two or more types of pentavalent metal elements. The oxide particles each have a major axis and a minor axis that intersects with the major axis, and each have a polygonal tunnel structure including at least one tunnel that has a shape of a polygon having five or more sides and that is along the major axis.

IPC Classes  ?

• C01G 41/00 - Compounds of tungsten
• B01J 23/30 - Tungsten
• B01J 35/02 - Solids
• B01J 37/08 - Heat treatment
• B01J 37/34 - Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves

Abstract

A bonded object production method according to one embodiment of the present invention involves performing, by using continuous furnace, a process on a laminate that includes a metallic member, a ceramic member, and a brazing material layer disposed therebetween while conveying the laminate. The bonded object production method is characterized by comprising: a step for heating the laminate in an inert atmosphere from 200°C to a bonding temperature at an average temperature increase rate of at least 15°C/min; a step for bonding the laminate in an inert atmosphere at the bonding temperature within a range of 600-950°C; and a step for cooling the laminate from the bonding temperature down to 200°C at an average temperature decrease rate of at least 15°C/min. In addition, the ceramic substrate is preferably a silicon nitride substrate.

IPC Classes  ?

• B23K 1/00 - Soldering, e.g. brazing, or unsoldering
• B23K 1/008 - Soldering within a furnace
• B23K 1/19 - Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
• B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

The tungsten wire according to the embodiment comprises a tungsten alloy containing rhenium, wherein the vertex density of peaks (Spd), which is a surface roughness parameter, is 7,000-11,000.

IPC Classes  ?

• B21J 5/08 - Upsetting
• B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
• B23H 3/00 - Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
• C22C 27/04 - Alloys based on tungsten or molybdenum
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B21C 1/00 - Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing

Abstract

Provided are a magnetic cold storage material particle exhibiting low breakage rate even when long-term vibration by operation of a refrigerating machine is applied in an extremely low temperature range, a cold storage device wherein the refrigerating performance does not lower even under long-term operation due to inclusion of same, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet.　A magnetic cold storage material particle according to an embodiment of the present invention comprises an intermetallic compound containing a rare earth element, wherein the area ratio of voids located in a cross section thereof is 0.0001% to 15% inclusive. A cold storage device, a refrigerating machine, and other apparatuses including the refrigerating machine such as a superconducting magnet according to an embodiment of the present invention include the magnetic cold storage material particle according to the embodiment.

IPC Classes  ?

• C09K 5/14 - Solid materials, e.g. powdery or granular
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• G01N 24/00 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
• H01F 6/00 - Superconducting magnets; Superconducting coils

Abstract

A silicon nitride sintered body according to an embodiment of the present invention is provided with silicon nitride crystal particles and a grain boundary phase, wherein when a 20 μm × 20 μm region in a central cross-section of the silicon nitride sintered body is subjected to Raman spectroscopic analysis, two or more peaks are detected in the range of 780 cm-1to 810 cm-1and 1340 cm-1to 1370 cm-1, and four to six peaks are detected in the ranges of 170 cm-1to 190 cm-1, 607 cm-1to 627 cm-1, 720 cm-1to 740 cm-1, and 924 cm-1to 944 cm-1.

IPC Classes  ?

• C04B 35/596 - Composites
• C04B 35/645 - Pressure sintering
• F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
• F16C 33/32 - Balls
• G01N 3/32 - Investigating strength properties of solid materials by application of mechanical stress by applying repeated or pulsating forces
• G01N 21/65 - Raman scattering

Abstract

The present invention provides a method for producing a ceramic circuit board in which a copper plate is joined to at least one surface of a ceramic substrate via a brazing material layer, said method being characterized in that the brazing material layer contains no Ag and contains one or two from among Sn or In, and Cu and Ti, and in that said method comprises: a chemical polishing step for preparing a ceramic circuit board in which a portion of the brazing material layer is exposed between pattern shapes of the copper plate, and chemically polishing the portion of the brazing material layer; and a brazing material etching step for etching the portion of the chemically polished brazing material layer with an etchant of pH 6 or less which contains one or two substances selected from hydrogen peroxide and ammonium peroxodisulfate.

IPC Classes  ?

• C23F 1/00 - Etching metallic material by chemical means
• C23F 1/18 - Acidic compositions for etching copper or alloys thereof
• C23F 3/06 - Heavy metals with acidic solutions
• H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

This silicon nitride sintered body according to an embodiment is characterized by: including silicon nitride crystal particles and a grain boundary phase; and showing seven or more peaks detected in the range from 400 cm-1to 1200 cm-1when a 20 μm × 20 μm region in an arbitrary cross section of the silicon nitride sintered body is analyzed using Raman spectroscopy, where the strongest peak of the seven of more peaks is not found in the range from 515 cm-1to 525 cm-1. Also, at least three of the seven or more peaks are preferably in the range from 530 cm-1to 830 cm-1. At least one of the seven or more peaks is preferably in the range from 440 cm-1to 460 cm-1.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• C04B 35/645 - Pressure sintering
• F16C 19/06 - Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for radial load mainly with a single row of balls
• F16C 33/32 - Balls
• G01N 21/65 - Raman scattering

Abstract

Provided is tungsten oxide powder having an average diameter of primary particles less than or equal to 100 nm, characterized in that the crystalline phase and the amorphous phase coexist in the primary particles of the tungsten oxide powder. Furthermore, preferably, the amorphous phase exists along 80%-100% of the perimeter of the crystalline phase in the primary particles. Furthermore, preferably, the amorphous phase exists along 100% of the perimeter of the crystalline phase in the primary particles. An electrochromic element using such tungsten oxide powder makes it possible to improve response speed and coloring efficiency.

IPC Classes  ?

• G02F 1/1524 - Transition metal compounds
• C01G 41/00 - Compounds of tungsten

Abstract

Provided are a scintillator array with which X-ray radiation coloring of resin employed in a reflective layer of an X-ray ceramic scintillator array is suppressed, thereby significantly improving a reduction in the output of the scintillator array, and a radiation detector and a radiation inspecting device employing the scintillator array. As a feature with which the resin for use in the reflective layer of the X-ray ceramic scintillator array is to be provided, in the resin that is employed a ratio between an absorption intensity in a wavenumber range of 1490 cm-1to 1750 cm-1and an absorption intensity in a wavenumber range of 2500 cm-1to 2990 cm-1, in an absorption spectrum obtained by means of Fourier transform infrared spectroscopy (FT-IR) of the resin, is a value lying in a specific range.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens

Abstract

By a homogenizing the amount of Re content in an arbitrary cross-section of a ReW wire rod body, it is possible to achieve a ReW wire rod which ensures mechanical properties without variation in material quality and which greatly contributes to improving stability of thermo-electromotive force. For ReW, normally a powder alloy method is adopted which involves mixing powder, and forming and sintering the same. Because ReW sintering is advanced by means of solid phase expansion, phase regions (σ-phase segregated phase) with a locally high Re composition ratio occur due to powder particle size distribution, mixing state, or forming/sintering conditions. When a sintered body with a large amount of variation in such a Re composition is processed into rods or wire (wire rods), non-homogeneity resulting from Re amount variation (fluctuation) occurs in the processing direction cross-section and axial-direction perpendicular cross-section. This rhenium tungsten wire rod is formed from a tungsten alloy containing rhenium, wherein the rhenium content in an arbitrary measurement area with a 1 μm diameter unit surface area in the wire rod body is less than 30 wt%.

IPC Classes  ?

• C22C 27/04 - Alloys based on tungsten or molybdenum

Abstract

509090 of 100,000 nm or less; and the half width of the strongest peak detected at 29°±1° through X-ray diffraction analysis (2θ) is 2° or less.

IPC Classes  ?

• C01G 41/02 - Oxides; Hydroxides

Abstract

A tungsten wire according to one embodiment is formed of a W alloy that contains Re, while having a mixture in at least a part of the surface thereof; the mixture contains W, C and O as constituent elements; and if A (mm) is the cross-sectional thickness of the mixture in the radial direction and B (mm) is the diameter of the tungsten wire, the average of the ratio of A to B, namely the average of A/B is 0.3% to 0.8%.

IPC Classes  ?

• B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
• C22C 27/04 - Alloys based on tungsten or molybdenum
• C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
• C22C 1/04 - Making non-ferrous alloys by powder metallurgy
• C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• C23C 8/12 - Oxidising using elemental oxygen or ozone
• C23C 8/64 - Carburising
• C23C 24/08 - Coating starting from inorganic powder by application of heat or pressure and heat
• B22F 3/24 - After-treatment of workpieces or articles
• B21C 1/00 - Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
• B21C 37/04 - Manufacture of metal sheets, rods, wire, tubes, profiles or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of rods or wire

Abstract

The present invention is a ceramic circuit board obtained by joining a ceramic board and a metal plate with a joining layer therebetween, and when the ceramic circuit board is observed in a cross-section from the thickness direction and lateral direction of the ceramic circuit board, a side surface of the metal plate has an inclined shape, and the joining layer has a joining-layer protruding section which protrudes 20-150[µm] from an edge where the joining layer is in contact with the side surface of the metal plate. Furthermore, the shape and Vickers hardness of the side surface of the metal plate is controlled. The ceramic board is preferably a silicon nitride board.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

An embodiment of the present invention provides a ceramic copper circuit board in which the reliability of joining with a joining layer is improved. An insulated circuit board according to this embodiment is characterized in comprising an insulated substrate and a conductor part that is joined to at least one surface of the insulated substrate, the average value of the amount of nitrogen at any three locations when the amount of nitrogen in the conductor part surface undergoes XPS analysis being within the range of 0 at% to 50 at% (inclusive). The average value of the amount of oxygen at the three locations when the amount of oxygen in the conductor part surface undergoes XPS analysis is preferably within a range of 3 at% to 30 at% (inclusive). The ratio of the amount of nitrogen to the amount of oxygen is preferably 0 to 5 (inclusive).

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H05K 1/03 - Use of materials for the substrate
• H05K 1/09 - Use of materials for the metallic pattern

Abstract

This ceramic ball material, according to an embodiment of the present invention, comprises: a spherical part; and a band-shaped part formed over the circumference of the surface of the spherical part. The width of the band-shaped part is within a range of 0.5 to 4.0 mm inclusive. Both shoulder sections of the band-shaped part are each equipped with an R section, the radius of curvature of which is at least 0.02 mm. Furthermore, for ceramics, any one of aluminum oxide, silicon nitride, boron nitride and zirconium oxide can be applied.

IPC Classes  ?

• B24B 11/00 - Machines or devices designed for grinding spherical surfaces or parts of spherical surfaces on work; Accessories therefor
• B28B 3/02 - Producing shaped articles from the material by using presses; Presses specially adapted therefor wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form
• F16C 33/32 - Balls
• B28B 11/08 - Apparatus or processes for treating or working the shaped articles for reshaping the surface, e.g. smoothing, roughening, corrugating, making screw-threads
• C04B 41/72 - After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only artificial stone involving the removal of part of the materials of the treated articles, e.g. etching
• B24B 37/02 - Lapping machines or devices; Accessories designed for working surfaces of revolution
• B24B 37/025 - Lapping machines or devices; Accessories designed for working surfaces of revolution designed for working spherical surfaces
• C04B 35/587 - Fine ceramics

Abstract

This insulating circuit board, in which a conductor part is joined to at least one surface of an insulating substrate, is characterized in that when the amount of carbon on the surface of the conductor part is analyzed by XPS, the average value of three arbitrary places is within a range of 0-70 at%. In addition, it is preferable that when the amount of oxygen on the surface of the conductor part is analyzed by XPS, the average value of three arbitrary places is within a range of 3-50 at%.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H05K 1/02 - Printed circuits - Details
• H05K 1/03 - Use of materials for the substrate
• H05K 1/09 - Use of materials for the metallic pattern

Abstract

A ceramic scribe substrate according to an embodiment comprises, on the surface side of a scribe line for forming a ceramic substrate, a continuous groove in which a plurality of grooves are connected by irradiating with a fiber laser, wherein the depth of the continuous groove is more than 50 [μm], and falls within the range of 0.15 times to 0.55 times the thickness of the ceramic substrate.

IPC Classes  ?

• H05K 1/02 - Printed circuits - Details
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits

Abstract

The cold storage material according to an embodiment of the present invention includes a rare earth oxysulfide including one or more rare earth elements selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, the cold storage material including 0.001-10 atom% (inclusive) of a first group element, and being such that the maximum value of the specific heat capacity in a temperature range of 2-10 K (inclusive) is 0.5 J/(cm3·K) or greater.

IPC Classes  ?

• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• C09K 5/14 - Solid materials, e.g. powdery or granular

Abstract

A bonded body which is obtained by bonding a metal plate and a ceramic substrate to each other by the intermediary of a bonding layer that contains Ag, and which is characterized in that, in a measurement region in a section of the bonding layer taken along the thickness direction and a direction perpendicular to the thickness direction, said measurement region having a value of (the length in the thickness direction) × (the length in the perpendicular direction) of 200 μm, Ag-rich regions that have an Ag concentration of 60 at% or more are present at an area ratio of 70% or less relative to Ag-poor regions that have an Ag concentration of 50 at% or less. It is preferable that the length of the bonding layer in the thickness direction is within the range of from 10 μm to 60 μm. It is also preferable that the ceramic substrate is a silicon nitride substrate.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

A joined body according to an embodiment is provided with a ceramic substrate, a copper plate and a joint layer. The joint layer is arranged on at least one surface of the ceramic substrate and joins the ceramic substrate and the copper plate to each other. The joint layer contains Ag and Ti. The copper plate includes a first region, a second region and a third region. The first region is separated apart from the joint layer in the thickness direction. The second region is arranged between the joint layer and the first region, and has a higher Ag concentration than that in the first region. The third region is arranged between the joint layer and the second region, and has a lower Ag concentration than that in the second region.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H05K 1/03 - Use of materials for the substrate

Abstract

A bonded body according to the present embodiment is provided with a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is disposed on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer and a plurality of first alloys. The Ti reaction layer contains titanium nitride or titanium oxide as a main component. The plurality of first alloys are located between the Ti reaction layer and the copper plate. Each of the plurality of first alloys contains at least one selected from a Cu-Sn alloy and a Cu-In alloy. The plurality of first alloys have mutually differing Sn concentrations or In concentrations. The amount of warping can be reduced by using the present embodiment. Furthermore, the speed of heating and the speed of cooling in a joining process can be increased. In the present embodiment, a silicon nitride substrate is suitable as the ceramic substrate.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/15 - Ceramic or glass substrates
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

The purpose of the present invention is to improve a reversible reaction rate of electrochromic materials and to make it possible to efficiently manufacture an electrochromic element. According to an embodiment, provided is a tungsten oxide material (1) containing potassium. The tungsten oxide material has a particle shape which includes a central part (2) and a peripheral part (3) adjacent to the central part, and has an average particle diameter of 100 nm or less. The periodicity of a crystal is different between the central part and the peripheral part. In addition, provided is a tungsten oxide powder group which is for an electrochromic element and contains 80-100 mass% of said tungsten oxide material. Also, provided is a slurry which is for manufacturing an electrochromic element and contains said tungsten oxide material.

IPC Classes  ?

• G02F 1/1524 - Transition metal compounds
• C01G 41/00 - Compounds of tungsten
• C01G 41/02 - Oxides; Hydroxides
• C09K 9/00 - Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy

Abstract

1-xxa1-yyb1212. In the compositional makeup, x, y, a, and b respectively satisfy 0.005≤x≤0.025, 0.3≤y≤0.7, 2.8≤a≤3.1, and 4.8≤b≤5.2.

IPC Classes  ?

• C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
• C09K 11/08 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials
• C09K 11/80 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals containing aluminium or gallium
• G01T 1/161 - Applications in the field of nuclear medicine, e.g. in vivo counting
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
• A61B 6/03 - Computerised tomographs

Abstract

Cold storage material particles according to one embodiment of the present invention contain: at least one first element that is selected from the group consisting of rare earth elements, silver (Ag) and copper (Cu); and a second element that is different from the first element and forms a polyvalent metal ion in an aqueous solution. With respect to the cold storage material particles, the atomic concentration of the second element is from 0.001% by atom to 60% by atom; and the maximum value of the volumetric specific heat at a temperature of 20 K or less is 0.3 J/cm3·K or more.

IPC Classes  ?

• F25B 9/14 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the cycle used, e.g. Stirling cycle
• H01F 6/04 - Cooling
• C09K 5/14 - Solid materials, e.g. powdery or granular
• F28D 20/00 - Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups or
• G01N 24/00 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging

Abstract

TiE1TiE1TiE1E1) is 0.1 or less.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H05K 1/03 - Use of materials for the substrate
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

This radiation shielding body, which shields neutron rays, X-rays, and γ-rays, comprises 10-90 vol% of gadolinium.

IPC Classes  ?

• G21F 1/04 - Concretes; Other hydraulic hardening materials
• G21F 3/00 - Shielding characterised by its physical form, e.g. granules, or shape of the material

Abstract

This joined body according to an embodiment is characterized by comprising: a ceramic substrate; a copper plate; and a joining layer disposed on at least one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joined body is further characterized in that: the joining layer contains Ag, Cu, Ti, and a first element which is one or two selected from Sn and In; a Ti alloy is present at the junction interface between the copper plate and the joining layer; the Ti alloy comprises Ti and at least one selected from Ag, Cu, Sn and In; and the abundance ratio of the Ti alloy per 30 µm of the length of the junction interface is 30%.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H05K 1/03 - Use of materials for the substrate
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

A silicon nitride sintered body comprising silicon nitride crystal grains and grain boundary phases, and characterized in that, when the width before the application of a surface treatment is defined as D, the relationships between the average grain diameter dA and the average aspect ratio rA of the silicon nitride crystal grains in a first region that extends from the outermost surface to a depth of 0 to 0.01D and the average grain diameter dB and the average aspect ratio rB of the silicon nitride crystal grains in a second region that is located deeper inside each of the crystal grains than the first region satisfy the formula: 0.8 ≦ dA/dB ≦ 1.2 and the formula: 0.8 ≦ rA/rB ≦ 1.2.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• F16C 33/32 - Balls

Abstract

This joined body according to one embodiment comprises a ceramic substrate, a copper plate, and a joining layer disposed at least on one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joining layer contains titanium. The joining layer includes a layer in which titanium is a main component. This layer has a first region and a second region, the first region being formed at the interface between the joining layer and the ceramic substrate, and the second region being located between the first region and the copper plate. When the concentrations of titanium in the first region and in the second region, within a region of 200 µm × the thickness of each of the measurement regions, are measured by the EDX, the joined body is characterized by having a ratio M1/M2 of the titanium concentration in the first region, M1 at%, to the titanium concentration in the second region, M2 at%, of 0.1-5.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 1/03 - Use of materials for the substrate

Abstract

This silicon nitride sintered body is characterized in that at least one black part having a major diameter of at least 10 μm is present in a visual field having a unit area of 5mm×5mm when any cross section of said silicon nitride sintered body is observed with a metallographic microscope. Moreover, the major diameter of the black part is preferably at most 500 μm. Further, it is preferable that two to ten black parts are present in the visual field having a unit area of 5mm×5mm. Furthermore, it is preferable that a Fe segregation part is present in the black part.

IPC Classes  ?

• F16C 33/32 - Balls
• C04B 35/587 - Fine ceramics

Abstract

Provided is a laminate comprising a ceramic substrate and a copper plate bonded to the ceramic substrate with a bonding layer therebetween, wherein the copper plate has a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and the count ratio of copper grains having a major axis exceeding 400 μm is 0-5% in three regions of 5 mm × 5 mm contained in the surface. Preferably, the bonding temperature is 800°C or lower. Further preferably, the count ratio of copper grains having a major axis exceeding 400 μm is 1% or less.

IPC Classes  ?

• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal

Abstract

According to one embodiment of the present invention, a brazing filler material for bonding a ceramic substrate and a metal plate to each other is characterized by having an endothermic peak within the range of from 550°C to 700°C in the temperature raising step in the DSC curve as determined by a differential scanning calorimeter (DSC). It is preferable that the brazing filler material contains Ag, Cu and Ti. In addition, it is preferable that the brazing filler material has two or more endothermic peaks within the range of from 550°C to 650°C in the temperature raising step.

IPC Classes  ?

• B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
• B23K 1/19 - Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• C22C 5/06 - Alloys based on silver
• C22C 30/02 - Alloys containing less than 50% by weight of each constituent containing copper

Abstract

The present invention is for accommodating multiple ceramic substrates, and is provided with a rectangular bottom surface and four side surfaces respectively connected to the four edges of the bottom surface. Inward-facing side protrusions having a height of 2 mm or greater are disposed on at least two facing side surfaces of the four side surfaces, and inward-facing bottom protrusions having a height of 2 mm or greater are disposed on the bottom surface.

IPC Classes  ?

• B65D 85/86 - Containers, packaging elements or packages, specially adapted for particular articles or materials for electrical components

Abstract

In this invention, a fluor plate for converting X-ray into visible light comprises praseodymium and cerium-activated gadolinium oxysulfide phosphors. The phosphors contain praseodymium at a concentration of between 0.01% by mass and 0.3% by mass inclusive, and cerium at a concentration of between 5 ppm and 30 ppm inclusive. The mean particle size of the phosphors is between 10 μm and 20 μm inclusive. The weight per unit surface area of the phosphors is between 270 mg/cm2and 380 mg/cm2 inclusive.

IPC Classes  ?

• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens

Abstract

A scintillator array (1) is provided with: a structure (20) that comprises a plurality of scintillator segments (2) and a light-reflecting first reflection layer (3) provided between the plurality of scintillator segments, said plurality of scintillator segments having sintered bodies that include rare earth element oxysulfide fluorescent bodies; and a layer (4) that is provided on the structure and includes a light-reflecting second reflection layer. The first reflection layer includes a section that extends into the interior of this layer.

IPC Classes  ?

• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
• A61B 6/03 - Computerised tomographs
• G01N 23/046 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

A scintillator array comprising at least one scintillator segment and a first reflection layer that reflects light, wherein the at least one scintillator segment and first reflection layer include a first surface and a second surface, and the at least one scintillator segment includes a structure having a sintered body containing a rare earth oxysulfide phosphor and a second reflection layer which includes a film that reflects light and is provided on the first surface with an adhesive layer having a thickness of 2 to 40 μm interposed therebetween.

IPC Classes  ?

• C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
• C09K 11/84 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals containing sulfur, e.g. oxysulfides
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens
• A61B 6/03 - Computerised tomographs
• G01N 23/046 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]

Abstract

A toroidal core on which an Fe-based magnetic thin band is wound, the Fe-based magnetic thin band having crystals with an average crystal grain diameter of 1 µm or less, the toroidal core being characterized in that the proportion thereof occupied by the Fe-based magnetic thin band is 40-59%, and the µQf value at 1 MHz is 3 × 109Hz or more. Moreover, the average crystal grain diameter is preferably 0.1 µm or less. Moreover, the toroidal core preferably has a location having a gap from the inside diameter to the outside diameter.

IPC Classes  ?

• H05H 7/18 - Cavities; Resonators
• H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
• H01F 1/153 - Amorphous metallic alloys, e.g. glassy metals
• H01F 27/25 - Magnetic cores made from strips or ribbons

Abstract

In a magnetic ribbon (1) of an embodiment, when XRD analysis of a Fe-Nb-Cu-Si-B magnetic ribbon is performed, the crystallinity represented by the total crystal phase peak area/(amorphous phase peak area + total crystal phase peak area) is 0.05-0.4. When EBSD analysis of the crystal phase is performed, the magnetic ribbon (1) preferably has a region in which a Kikuchi pattern is detected. The magnetic ribbon also preferably has a thickness of not more than 25 μm.

IPC Classes  ?

• C21D 6/00 - Heat treatment of ferrous alloys
• C21D 8/12 - Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
• C21D 9/00 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
• C22C 38/00 - Ferrous alloys, e.g. steel alloys
• H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
• H01F 1/153 - Amorphous metallic alloys, e.g. glassy metals
• H01F 27/25 - Magnetic cores made from strips or ribbons

Abstract

A joined body according to an embodiment of the present invention comprises a substrate, a metal member, and a joining layer. The joining layer is provided between the substrate and the metal member. The joining layer comprises: first particles including carbon; a first region including metal; and a second region including titanium. The second region is provided between the first particles and the first region. The concentration of titanium in the second region is greater than the concentration of titanium in the first region.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• B23K 1/19 - Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape

Abstract

This cathode component for a discharge lamp comprises a first portion containing tungsten and emitter material, and a second portion containing metal different from the emitter material. When the average crystal grain diameter of a tungsten phase of the first portion is A μm, and the average crystal grain diameter of the phase of the metal of the second portion is B μm, A and B are numbers satisfying an expression: B > A.

IPC Classes  ?

• H01J 61/06 - Main electrodes

Abstract

Provided are: a member for plasma treatment devices, which has excellent plasma resistance and high durability; and a plasma treatment device. The member for plasma treatment devices comprises a base material 2 containing a first element that is a metal element or a metalloid element and a film 3 positioned on the base material and containing yttrium oxide as the main component, wherein, in the film 3, the area ratio of yttrium oxide crystal grains that are oriented at a misorientation angle from {111} orientation of the yttrium oxide crystal lattice plane of within ±10° is 45% or more.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
• C04B 41/87 - Ceramics
• C23C 14/08 - Oxides
• H01L 21/3065 - Plasma etching; Reactive-ion etching
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers

Abstract

A ceramic copper circuit board including a ceramic board, and a copper circuit provided upon the ceramic board, said ceramic copper circuit board characterized in that, in a cross section of the copper circuit parallel to a first direction heading from the ceramic board toward the copper circuit, an arbitrary line parallel to the first direction intersects a plurality of copper crystal grains, and the average of a plurality of distances in a second direction perpendicular to the first direction between said line and the respective ends of the copper crystal grains in the second direction is 300 μm or less.

IPC Classes  ?

• C22C 5/08 - Alloys based on silver with copper as the next major constituent
• C22C 9/00 - Alloys based on copper
• H01L 23/15 - Ceramic or glass substrates
• B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
• H05K 1/09 - Use of materials for the metallic pattern

Abstract

This discharge lamp cathode part having a wire diameter of 2 to 35 mm comprises: a first section including tungsten and an emitter material, the concentration of the emitter material being 0.1 to 5 mass%; and a second section including a metal different than the emitter material, the concentration of the emitter material being less than 0.1 mass%. In a case in which electron backscatter diffraction analysis is performed for a region that has a unit area of 90 × 90 μm and that is positioned within 1 mm from the center of a cross-section which passes through the center of the first section and which is taken along the length direction of the first section, an area ratio of a tungsten phase, having a crystal orientation whereby an orientation difference with respect to the <101> orientation is -15 to 15 degrees, is greatest in an inverse pole figure map of the length direction.

IPC Classes  ?

• H01J 61/06 - Main electrodes
• H01J 61/067 - Main electrodes for low-pressure discharge lamps
• H01J 61/073 - Main electrodes for high-pressure discharge lamps

Abstract

This tungsten oxide powder has a major-axis average particle size of 10 μm or less and an average aspect ratio of 10 or less, wherein the number of crystal defects is 0-4 per unit area of 9 nm2, in a surface or cross-section in a minor axis direction of a primary particle thereof. In addition, this tungsten oxide powder preferably has a hexagonal tunnel structure along the major axis. In addition, this tungsten oxide powder is preferably oxygen-deficient. As a result, the intercalation performance thereof can be improved.

IPC Classes  ?

• C01G 41/02 - Oxides; Hydroxides

Abstract

This plasma processing device is provided with: a chamber including a first member, and a second member capable of being attached to and removed from the first member; a conductive member disposed between the first member and the second member; and a first high-frequency power source for generating plasma in the chamber. The conductive member includes a resin member comprising a resin material, and a metal film provided on the surface of the resin member.

IPC Classes  ?

• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• H01L 21/3065 - Plasma etching; Reactive-ion etching

Abstract

22. If an electron back scattering diffraction analysis is performed on a region which includes the center of a cross-section that passes through the center of the body part and extends along the length direction of the body part, and which has a unit area of 90 μm × 90 μm, the crystal grain map obtained by this electron back scattering diffraction analysis comprises tungsten crystal grains containing tungsten and thorium crystal grains containing thorium. With respect to the cumulative distribution graph of the particle size distribution of the plurality of thorium crystal grains in the crystal grain map, the particle size at the cumulative frequency of 90% is 3.0 μm or more.

IPC Classes  ?

• H01J 61/067 - Main electrodes for low-pressure discharge lamps
• H01J 61/073 - Main electrodes for high-pressure discharge lamps
• H01J 9/02 - Manufacture of electrodes or electrode systems

Abstract

Provided is a sliding member comprising a sintered silicon nitride having silicon nitride crystal grains and grain boundary phases, the sliding member being characterized in that in a 50 µm x 50 µm observation area of an arbitrary cross section or surface of the sintered silicon nitride, a proportion of the number of silicon nitride crystal grains having dislocation defects therein in arbitrary 50 silicon nitride grains showing full contours thereof is 0-10% inclusive. More preferably, said proportion is 0-3% inclusive.

IPC Classes  ?

• F16C 33/24 - Brasses; Bushes; Linings with different areas of the sliding surface consisting of different materials
• F16C 33/32 - Balls
• H02K 5/173 - Means for supporting bearings, e.g. insulating supports or means for fitting bearings in the bearing-shields using bearings with rolling contact, e.g. ball bearings
• C04B 35/593 - Fine ceramics obtained by pressure sintering

Abstract

Provided are: a member which is used for a plasma processing device and has an excellent plasma-resistance and improved adhesion strength to a substrate of a film; and a plasma processing device provided with the same. A member (1) for a plasma processing device is provided with: a substrate (2) containing a first element which is a metal element or a semi-metal element; a film (3) located on the substrate (2) and having, as a main component, an oxide, a fluoride, or an acid fluoride of a rare earth element; an amorphous part (4) which is interposed between the substrate (2) and the film (3) and contains at least one among the first element, yttrium, oxygen, and fluorine.

IPC Classes  ?

• C23C 14/08 - Oxides
• C04B 35/10 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
• C04B 41/87 - Ceramics
• H01L 21/3065 - Plasma etching; Reactive-ion etching
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers

Abstract

A Co-based amorphous magnetic thin strip (1) for a magnetic sensor is made of a Co-based amorphous magnetic thin strip having a width W of 1 mm or less, a length L of 6-100 mm inclusive, an L/W ratio of 20-1000 inclusive, a strip thickness t of 10-28 μm inclusive, and a rectangular or trapezoidal cross section.

IPC Classes  ?

• H01F 1/153 - Amorphous metallic alloys, e.g. glassy metals
• G01R 33/02 - Measuring direction or magnitude of magnetic fields or magnetic flux
• H01F 10/13 - Amorphous metallic alloys, e.g. glassy metals

Abstract

22, wherein when electron backscatter diffraction analysis is performed on a region having a unit area of 90 μm×90 μm and located within 1 mm from the center of a cross section that passes through the center of the body part and is taken along the longitudinal direction of the body part, the area ratio of a tungsten phase having a crystal orientation, of which the orientation difference from the <101> orientation is -15 to 15 degrees, is the highest in the longitudinal inverse pole figure map.

IPC Classes  ?

• H01J 61/06 - Main electrodes
• H01J 61/067 - Main electrodes for low-pressure discharge lamps
• H01J 61/073 - Main electrodes for high-pressure discharge lamps

Abstract

Provided is a yttrium sputtering target characterized by having a maximum pore radius of 1 mm or less. Additionally, the number of pores existing on a cross-section of the yttrium sputtering target is preferably 0-2. Additionally, the maximum length of cracks is preferably 3 mm or less. Additionally, the tensile strength of the yttrium sputtering target is preferably 100 MPa or higher.

IPC Classes  ?

• C23C 14/34 - Sputtering
• C23C 14/08 - Oxides

Abstract

subepi233, GaAs, GaN, diamond, and CdTe. Such a photon-counting type radiation detector is suitable for a direct conversion type.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Abstract

A friction stir welding tool member comprising a shoulder portion and a probe portion concentrically protruding from an upper surface of the shoulder portion, wherein the shoulder portion has an outer periphery provided with a rounded portion which is rounded so as to have a curving shape. The friction stir welding tool member is characterized in that a 2-dimensional space which is determined from a projection of a lateral region surrounding the tip of the probe portion to the curved portion and in which neither the shoulder portion nor the probe portion exist has a spatial occupancy rate in a range of from 30 to 70%. Preferably, a shoulder angle is in a range of -15° to +15° inclusive.

IPC Classes  ?

• B23K 20/12 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding

Abstract

This rotating anode X-ray tube target is provided with: a first part that is formed from a first material and that has a first surface from which X rays are emitted upon reception of electrons; a second part that is formed from a second material different from the first material and that has a second surface different from the first surface; and a fin provided on the second surface.

IPC Classes  ?

• H01J 35/10 - Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
• H05G 1/54 - Protecting

Abstract

222-type structure (11), and which has a crystallite size of not more than 70 nm.

IPC Classes  ?

• C09K 5/14 - Solid materials, e.g. powdery or granular
• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
• H01F 6/04 - Cooling

Abstract

A silicon nitride substrate which comprises a silicon nitride sintered body comprising silicon nitride crystal particles and a grain boundary phase, wherein the silicon nitride substrate being characterized by having a thickness of 0.4 mm or less, and also characterized in that, in an arbitrary cross section of the silicon nitride sintered body or the surface of the silicon nitride sintered body, the number-based percentage of silicon nitride crystal particles each having a dislocation defect part therein in silicon nitride crystal particles present in a unit area having a size of 10 μm × 10 μm is 0 to 20% inclusive. It becomes possible to improve etching resistance during the manufacture of a circuit board from the silicon nitride substrate.

IPC Classes  ?

• H05K 1/03 - Use of materials for the substrate
• C04B 35/584 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape

Abstract

In a silicon nitride sintered body having silicon nitride crystal grains and a grain boundary phase, dislocation defects exist in the interior of at least some of the silicon nitride crystal grains. The proportion of the number of the at least some of the silicon nitride crystal grains in 50 arbitrary silicon nitride crystal grains the full contour of which can be seen in an arbitrary cross-section or surface of a silicon nitride sintered body is characterized by being from 50% to 100%. The thickness of a silicon nitride substrate that uses the silicon nitride sintered body is preferably within a range of from 0.1 mm to 0.4 mm. Also, the TCT characteristics can be improved by using the silicon nitride substrate as a silicon nitride circuit substrate.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• H01L 23/15 - Ceramic or glass substrates
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H01L 23/373 - Cooling facilitated by selection of materials for the device
• H05K 1/03 - Use of materials for the substrate

Abstract

9010901010 accounting for the accumulation percentage of 10% in terms of volume proportion, in the particle size distribution, is 10 μm or more.

IPC Classes  ?

• B22F 3/16 - Both compacting and sintering in successive or repeated steps
• B22F 3/105 - Sintering only by using electric current, laser radiation or plasma

Abstract

A ceramic copper circuit board according to one embodiment of the present invention is provided with a ceramic substrate and a first copper part. The first copper part is bonded to a first surface of the ceramic substrate, with a first brazing material part being interposed therebetween. The thickness of the first copper part is 0.6 mm or more. A lateral surface of the first copper part comprises a first inclined part. The width of the first inclined part is 0.5 times or less the thickness of the first copper part. The first brazing material part has a first protrusion part which protrudes from an end of the first inclined part. The length of the first protrusion part is from 0 μm to 200 μm (inclusive). The contact angle between the first protrusion part and the first inclined part is 65° or less.

IPC Classes  ?

• H05K 1/09 - Use of materials for the metallic pattern
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern

Abstract

Provided is an electrode layer that includes a solid solution which comprises a complex oxide that has, as constituent elements, tungsten, molybdenum, and oxygen. Preferably, when the total of the tungsten, molybdenum, and oxygen is 100 at%, tungsten is 1 to 40 at% and molybdenum is 1 to 40 at%, with the remainder being oxygen. The complex oxide is preferably a solid solution. In the solid solution, the tungsten-oxygen bond or the molybdenum-oxygen bond preferably includes the three types of tungsten-oxygen-tungsten, molybdenum-oxygen-molybdenum, and tungsten-oxygen-molybdenum.

IPC Classes  ?

• H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
• G02F 1/155 - Electrodes
• H01G 11/46 - Metal oxides
• H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx

Abstract

This plasma processing device member of the present disclosure comprises: a base; and on at least a portion of said base, a film of an oxide, fluoride, acid fluoride, or nitride of a rare earth element, wherein with said film, the area occupancy ratio of open pores of the surface exposed to plasma is 8 area% or less, and the average diameter of the open pores is 8 µm or less. This plasma processing device of the present disclosure comprises the abovementioned plasma processing device member. This method for manufacturing a plasma processing device member of the present disclosure includes: a step for forming on the base a first layer having yttrium oxide as the main component using the sputtering method; a step for doing smoothing processing of a film formation surface of the first layer; a step for forming on a processing surface of the first layer that underwent the smoothing processing a second layer having yttrium oxide as the main component using the sputtering method.

IPC Classes  ?

• H05H 1/00 - Generating plasma; Handling plasma
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/08 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges

Abstract

The plasma processing device member according to the present disclosure is provided with a base material, and a film of an oxide, fluoride, acid fluoride or nitride of a rare earth element on at least a portion of the base material. The arithmetic mean roughness Ra of the surface of the film exposed to plasma is 0.01-0.1 μm inclusive, the surface has a plurality of pores, and a value obtained by subtracting the average value of the equivalent circle diameter of the pores from the average value of the distance between the centers of gravity of adjacent pores is 28-48 μm inclusive. A plasma processing device according to the present disclosure is provided with said plasma processing device member.

IPC Classes  ?

• H05H 1/00 - Generating plasma; Handling plasma
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/08 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges

Abstract

3-X(010)(103)(103) in an X-ray diffraction spectrum be 1 to 10.

IPC Classes  ?

• H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
• C01G 41/02 - Oxides; Hydroxides
• H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof

Abstract

This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficient of variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.

IPC Classes  ?

• C23C 14/08 - Oxides
• H01L 21/3065 - Plasma etching; Reactive-ion etching
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• C04B 35/111 - Fine ceramics
• C04B 41/87 - Ceramics

Abstract

This member for use in a plasma treatment device is provided with a substrate, and, on the substrate, a film primarily composed of yttrium oxide. In the film, closed pores occupy no more than 0.2% of the surface area, and the half width of the diffraction peak in the (222) surface of the yttrium oxide obtained by x-ray diffraction is less than or equal to 0.25°. This plasma treatment device is provided with the member for use in a plasma treatment device.

IPC Classes  ?

• C23C 14/08 - Oxides
• H01L 21/3065 - Plasma etching; Reactive-ion etching
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• C04B 35/111 - Fine ceramics
• C04B 41/87 - Ceramics

Abstract

An etching liquid for active metal brazing materials, which is used for the purpose of etching an active metal brazing material layer that contains Ag, Cu and an active metal. This etching liquid for active metal brazing materials contains ammonium fluoride, hydrofluoboric acid, and one or two substances selected from among hydrogen peroxide and ammonium peroxodisulfate.

IPC Classes  ?

• C23F 1/30 - Acidic compositions for etching other metallic material
• B23K 1/00 - Soldering, e.g. brazing, or unsoldering
• C23F 1/18 - Acidic compositions for etching copper or alloys thereof
• H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Abstract

A method for manufacturing a ceramic circuit board in which a copper plate is joined to at least one surface of a ceramic substrate via a brazing material layer containing Ag, Cu, and active metal, wherein the method is provided with: a first chemical polishing step for preparing a ceramic circuit board in which a copper plate is joined to a ceramic substrate via a brazing material layer, with a portion of the brazing material layer exposed between pattern shapes of the copper plate, and chemically polishing the portion of the brazing material layer; and a first brazing material etching step for etching the portion of the chemically polished brazing material layer with an etchant at pH of 6 or below that contains one or two selected from hydrogen peroxide and ammonium peroxodisulfate.

IPC Classes  ?

• H05K 3/26 - Cleaning or polishing of the conductive pattern
• C04B 41/88 - Metals
• C23F 1/02 - Local etching
• C23F 1/16 - Acidic compositions
• H05K 3/20 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
• H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Abstract

8nm3nm3nm8nm8nm (at%) is the oxygen concentration at a depth of 8 nm.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

This component is provided with a film that contains yttrium oxide. A cross-sectional surface of the film has a first portion, a second portion and a third portion; and the first to third portions are away from each other by 0.5 mm or more. The Vickers hardness B1 measured in the first portion, the Vickers hardness B2 measured in the second portion, the Vickers hardness B3 measured in the third portion, and the average A of the Vickers hardnesses B1 to B3 respectively have values that satisfy 0.8A ≤ B1 ≤ 1.2A, 0.8A ≤ B2 ≤ 1.2A and 0.8A ≤ B3 ≤ 1.2A.

IPC Classes  ?

• H01L 21/3065 - Plasma etching; Reactive-ion etching
• C23C 14/08 - Oxides
• C23C 14/28 - Vacuum evaporation by wave energy or particle radiation