An apparatus for detecting objects comprises an optical interferometer that is configured to receive electromagnetic radiation from a light source, and emit electromagnetic radiation to a detector. The optical interferometer is coupled to an environment and further configured to respond to objects in the environment intruding into an interaction volume of the optical interferometer by varying an intensity of the electromagnetic radiation emitted to the detector based on a property of the objects in the interaction volume. A signal processor is configured to generate an output signal based on the intensity of the electromagnetic radiation emitted to the detector.
A peak-detector circuit may include a first input terminal for providing a first input voltage, a first rectifying element with an anode connected to the first input terminal, a first capacitor with a first electrode connected to a cathode of the first rectifying element, a first terminal coupled to the first electrode of the first capacitor, a second rectifying element with a cathode connected to the first input terminal, a second capacitor, a first switch coupling an anode of the second rectifying element to a first electrode of the second capacitor, and a second terminal coupled to the first electrode of the second capacitor.
The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present disclosure relates to an optoelectronic device for manipulating electromagnetic radiation. Drawbacks of conventional systems like material constraints, system complexity and tuning speed are overcome by the optoelectronic device comprising a substrate with at least one tuning structure arranged on the substrate, wherein the tuning structure comprises an electro-optical material. The tuning structure comprises a first and a second electrical contact. A cover layer covers the at least one tuning structure. An optical structure is arranged on the cover layer. A voltage source is electrically connected to the first and the second electrical contact and provided for generating electric fields within the at least one tuning structure.
An optical element for introducing a predetermined phase delay into incident electromagnetic radiation. The optical element comprises a first layer and a second layer arranged in a propagation path of a portion of the electromagnetic radiation. The first layer comprises a transmission regions configured to introduce a first phase delay into the portion of electromagnetic radiation propagating therethrough. The second layer comprises a metasurface configured to introduce a second phase delay into the portion of electromagnetic radiation propagating therethrough. The metasurface comprises subwavelength sized structures .
We disclose herein a method of compressing data for data transfer within an electronic device. The method comprises: receiving, at a first processing member of the electronic device, a plurality of data samples produced by a member of the electronic device, wherein the data samples comprise numerical bits; restructuring, by the first processing member, the plurality of data samples into a plurality of data packets; labelling each data packet with a sample indicator bit to indicate a plurality of groups across the plurality of data packets; transferring a bit stream comprising at least some of the plurality of data packets across an interface of the electronic device to a receiving member of the electronic device; and decoding the bit stream, by a second processing member of the electronic device, to obtain at least some of the plurality of the data samples, the decoding being based at least in part on the sample indicator bits.
Agency for Science, Technology and Research (Singapore)
ams AG (Austria)
Inventor
Liu, Zhengtong
Teng, Jinghua
Chu, Hong Son
Wang, Qian
Deng, Jie
Ang, Soo Seng Norman
Tang, Xiao Song Eric
Png, Ching Eng Jason
Fasching, Gernot
Mai, Lijian
Singulani, Anderson
Pulko, Jozef
Abstract
Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
8.
SEMICONDUCTOR DEVICE WITH A BOND PAD AND A SANDWICH PASSIVATION LAYER AND MANUFACTURING METHOD THEREOF
A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A method for starting a system-on-a-chip, SoC, without read only memory, ROM, comprises the steps of receiving, by a processor comprised by the SoC, a reset signal, monitoring, by a monitoring component comprised by the SoC, a connection between the processor and at least a non-volatile memory, both comprised by the SoC, upon occurrence of a first read access of the processor to the non-volatile memory via the connection checking, by the monitoring component, whether a data value returned in response to the first read access via the connection conforms to a pre-set value, and if the returned data value differs from the pre-set value, stopping, by the monitoring component, operation of the processor.
An apparatus for sensing particulate matter in a fluid includes a fluid flow conduit fluidically connected to an interaction chamber; a light source positioned to illuminate the interaction chamber; and a light detector assembly positioned to receive light scattered by particulate matter present in the interaction chamber. The light detector assembly includes a light detector; and an optical element, the optical element configured to provide light to the light detector based on an incidence angle of the scattered light.
A noise cancellation system for an ear-mountable playback device having a speaker, a feedforward microphone and an error microphone comprises a filter chain for coupling the feedforward microphone to the speaker, the filter chain comprising a series connection or parallel connection of a coarse filter and a fine filter, and a noise control processor. The fine filter is formed of a set of sub-filters having a predefined frequency range, wherein the predefined frequency range of each of the sub-filters together forms an effective overall frequency range of the fine filter. The noise control processor is configured to calculate an error signal based on a first noise signal sensed by the feedforward microphone and on a second noise signal sensed by the error microphone, to perform an adaptation of coarse filter parameters of the coarse filter based on the error signal, and to perform a limited adaptation of fine filter parameters of each of the sub-filters based on the error signal, wherein limits of the limited adaptation comprise the predefined frequency ranges of the sub-filters and at least one of a gain limit and a Q factor limit.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
Bus system comprising a first bus and a second bus, wherein the first bus is connected to the second bus through a bridge and a multiplexer. A first master has access to the second bus via the first bus, the bridge and the multiplexer. A second master has access to the second bus via the multiplexer. The bridge comprises an arbitration unit which is arranged to allow both a first master and a second master access to the second bus in such a way that no access is disturbed or lost.
An audio system for an ear mountable playback device comprises a compensation filter configured to generate a third compensation signal by applying filter operations to an audio signal, and an error compensation unit configured to generate a compensated error signal on the basis of the third compensation signal and a disturbed audio signal from an error microphone. The audio system further comprises a first noise filter configured to be adapted based on the compensated error signal, and a detection unit configured to estimate the acoustic leakage condition on the basis of the first noise filter or of the disturbed audio signal and an audio output signal. The compensation filter is configured to be adapted based on the acoustic leakage condition.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
An apparatus includes an integrated sensor module for detection of chemical substances. The sensor module includes a UV radiation source operable to emit UV radiation onto a sample. The sensor module also includes a sensor including dedicated channels disposed so as receive UV radiation reflected by the sample. Each of the channels is selectively sensitive to a different respective portion of the UV spectrum; collectively, the channels cover at least part of the UV spectrum sufficient for reconstruction of a spectral curve of the sample. An electronic control unit can be used to identify a composition of the sample based on signals from the channels.
G01J 3/36 - Investigating two or more bands of a spectrum by separate detectors
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.
A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. A passivation layer is formed on the oxide layer and the bottom of the trench. The passivation layer is removed from the bottom of the trench. Finally, a metallization layer is deposited into the trench.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
17.
AUDIO SYSTEM AND SIGNAL PROCESSING METHOD FOR AN EAR MOUNTABLE PLAYBACK DEVICE
An audio system for an ear mountable playback device comprises a speaker and an error microphone that is configured to sense sound being output from the speaker and ambient sound. The audio system further comprises a detection engine that is configured to determine a driver response between the speaker and the error microphone, and to estimate a leakage condition from the determined driver response.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
An electric circuitry for signal transmission comprises a transmission gate having an input node to apply an input signal. The transmission gate includes a first transistor having an electric conductive channel of a first type of conductivity and a second transistor having an electric conductive channel of a second type of conductivity. The electric circuitry comprises a control circuit to control the signal transmission of the transmission gate. The control circuit is configured to generate a first and second control signal to control the conductivity of the first and second transistor in dependence on a voltage level of the input signal.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/94 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the way in which the control signals are generated
19.
System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
The system-on-chip camera comprises a semiconductor body with an integrated circuit, a sensor substrate, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a lens or an array of lenses on a surface of incidence. Filter elements, which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.
A sensor front-end is presented for processing a measurement signal from a sensing unit, wherein the sensing unit is configured to receive a stimulus signal from an evaluation unit of the sensor front-end, generate the measurement signal from the stimulus signal by altering an amplitude of the stimulus signal based on a measurement parameter, and provide the measurement signal to the evaluation unit. The sensor front-end comprises the evaluation unit that is configured to generate a simulated measurement signal from the stimulus signal by controlling an amplitude of the stimulus signal based on a predetermined control variable, to generate a simulated output signal based on the stimulus signal and the simulated measurement signal, and to determine an error condition based on a comparison of the simulated output signal and the predetermined control variable or a signal derived from the predetermined control variable.
G01D 5/20 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
G01D 5/14 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
G01D 5/24 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
G01R 15/18 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
H04N 13/254 - Image signal generators using stereoscopic image cameras in combination with electromagnetic radiation sources for illuminating objects
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
G01B 11/25 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. moiré fringes, on the object
23.
BONDED STRUCTURE AND METHOD FOR MANUFACTURING A BONDED STRUCTURE
A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.
A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
A method of sensing a level of ambient light in an electronic device comprising sensing a combined light level of ambient light and light from the display, integrating this to determine an integrated light level, determining an integrated display light level, and compensating the integrated light level using the integrated display light level to determine the ambient light level. The device modulates the display between first and second brightness levels and determining the integrated display light level comprises sensing a combination of light from the display and ambient light when at each of the first and second brightness levels, determining a difference, and applying a calibration value to the difference to determine the integrated display light level.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
26.
Signal processor, processor system and method for transferring data
A signal processor is provided, the signal processor comprising a transaction buffer, a processing memory, a processing unit, and a bus connection that is configured to be connected to a bus system for data transmission, wherein the transaction buffer is configured to receive and save a set of data packets from the bus system, the data packets each comprise payload data and attributed address data, where the address data relate to an address of the processing memory, the processing memory is connected with the processing unit, the processing unit is configured to run a process routine, and the transaction buffer is configured to transfer payload data between the processing memory and the transaction buffer at a selectable instant of time during the process routine run by the processing unit. Furthermore, a method for transferring data is provided.
A particulate matter sensor module is operable based on sensing light scattered by particulate matter. The sensor includes one or more metalenses, which can help achieve a compact design in some implementations.
An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.
A semiconductor body comprises a buried layer of a first type of conductivity, a first region of the first type of conductivity, a shallow region of a second type of conductivity at a first surface of the semiconductor body, a sinker of the first type of conductivity located at the first surface of the semiconductor body, and a separating region of the first type of conductivity encircling at least one of the sinker and the buried layer. The first region is between the buried layer and the shallow region.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
30.
TEST STRIP, MONITORING DEVICE AND METHOD FOR FABRICATING A TEST STRIP
A test strip comprises a porous material, a photodetector and a substrate with a first and a second side. The porous material is attached to the first side of the substrate. The photodetector is attached to the second side of the substrate.
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 21/84 - Systems specially adapted for particular applications
G01N 33/543 - Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
31.
Audio system and signal processing method for an ear mountable playback device
An audio system for an ear mountable playback device includes a speaker, an error microphone, which senses sound being output from the speaker, and a sound control processor. The processor is configured for controlling and/or monitoring a playback of a detection signal or a filtered version of the detection signal via the speaker, recording an error signal from the error microphone, and determining whether the playback device is in a first state, where the playback device is worn by a user, or in a second state, where the playback device is not worn by a user, based on processing of the error signal.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
G10L 25/78 - Detection of presence or absence of voice signals
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventor
Hofrichter, Jens
Kaschowitz, Manuel
Poelzl, Bernhard
Rohracher, Karl
Jouve, Amandine
Balan, Viorel
Crochemore, Romain
Fournel, Frank
Maitrejean, Sylvain
Abstract
A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.
An apparatus comprises an optical sensor package that includes an optical sensor die. The optical sensor package further includes a reflow-stable optical diffuser disposed over the optical sensor die. The optical diffuser is surrounded laterally by an epoxy molding compound.
An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).
A sensing system comprising a measurement sensor configured to detect electromagnetic radiation and a reference sensor configured to detect a source of measurement uncertainty. The sensing system further comprises a shield configured to reduce an interaction between the electromagnetic radiation and the reference sensor.
A voltage regulator comprises an output transistor with a controlled section connected between a first supply terminal and an output terminal. An amplifier comprises a reference input and a feedback input. A current mirror comprising a replica transistor. The current mirror is configured to mirror and attenuate a load current supplied by the output transistor to the replica transistor. A filter circuit is coupled to a controlled section of the replica transistor and coupled to the feedback input of the amplifier via the output terminal.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
37.
Mobile communications device without physical screen-opening for audio
A mobile communications device that does not have a physical opening on the screen for audio is operable to transmit a signal to which a photoacoustic effect can be employed by interaction with water vapor in an ear of a user so as to generate audio in the ear or the immediate vicinity of the user's ear. Related methods, apparatuses, systems, techniques and articles are also described.
An audio system for an ear mountable playback device comprises a speaker, an error microphone predominantly sensing sound being output from the speaker and a feed-forward microphone predominantly sensing ambient sound. The audio system further comprises a voice activity detector which is configured to record a feed-forward signal from the feed-forward microphone. Furthermore, an error signal is recorded from the error microphone. A detection parameter is determined as a function of the feed-forward signal and the error signal. The detection parameter is monitored and a voice activity state is set depending on the detection parameter.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
G10L 25/78 - Detection of presence or absence of voice signals
An apparatus includes a light senor having directional sensitivity. The light sensor includes multiple light sensitive elements disposed below the same aperture. Each of the light sensitive elements has a respective field of view through the aperture that differs from the field of view of the other light sensitive elements. Signals from the light sensor can facilitate determining the direction of incoming light.
An audio system for an ear mountable playback device comprises a speaker, an error microphone configured to predominantly sense sound being output from the speaker and a further microphone configured to predominantly sense ambient sound. The system further comprises a first noise filter coupling the further microphone to the speaker, a second noise filter coupling the error microphone to the speaker and an adaptation engine. The adaptation engine is configured to adapt a response of the first noise filter depending on error signals from at least the error microphone, estimate a leakage condition from the response of the first noise filter, and adapt a response of the second noise filter depending on the estimated leakage condition.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
A host side is adapted to be connected to a client side by means of a clock wire, a selection wire, a first data wire and a second data wire. The host side is configured to transmit a digital selection signal over the selection wire to the client side, the selection signal determining either an audio transmission mode or a client communication mode. Further, the host side is configured to transmit digital audio data of a first channel and a second channel over the first and the second data wire to the client side in the audio transmission mode, and to perform client communication over the first and the second data wire in the client communication mode.
In one embodiment a temperature sensor has a first sensing unit operable to provide a first pseudo-differential unipolar analog signal representing a first temperature value of a power unit, an interface circuit operable to provide a second pseudo-differential unipolar analog signal representing a second temperature value of a powered unit, a multiplexer circuit which is operable to provide a pseudo-differential unipolar multiplexed analog signal comprising the first analog signal or the second analog signal, and a first analog-to-digital converter, ADC, component operable to provide a first digital signal from the multiplexed analog signal, the first digital signal comprising a digital representation of the first analog signal or the second analog signal. Therein, the operation of the first ADC component is synchronized with a control signal designed for activating the power unit.
G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
An amplifier circuit includes a circuit path of serially connected complementary type transistors. First and second feedback loops include a loop amplifier, the transistors of the circuit path and a corresponding resistor.
A noise cancellation enabled audio system for tonal tinnitus treatment using ambient noise comprises an audio processor (PROC) and at least one filter having an adjustable filter function. An ear mountable playback device (HP) further comprises a speaker (SP) and at least one feedforward microphone (FF_MIC). The audio processor (PROC) is configured to receive an input signal (Z(s)) from the feedforward microphone (FF_MIC) indicative of ambient noise and determine a filter transfer function (HF(s)) to realize a predetermined target transfer function (HT(s)), wherein the target transfer function (HT(s)) is configured to attenuate and/or amplify the input signal (Z(s)) in a predetermined frequency range. The filter function is adjusted depending on the filter transfer function (HF(s). The filter is configured to provide a system output signal (Y(s)) by filtering the input signal (Z(s)) depending on the filter function.
An apparatus and method for current peak detection. The apparatus includes a pulse laser diode array, a sense resistor, a capacitive voltage divider (CVD) electrically coupled to the pulse laser diode array, a first current rectifier, a second current rectifier, a first current peak detector, a second current peak detector, an analog-to-digital converter (ADC) operable to convert the analog outputs from each current peak detector to a digital output signal, and a digital signal processing (DSP) unit operable to detect, from the digital output signal, a current peak pulse at the top and the bottom of the sense resistor.
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
G01S 7/48 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group
G01S 7/4861 - Circuits for detection, sampling, integration or read-out
G01R 19/25 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
An apparatus and method for circuit failure detection for a diode array. The apparatus includes a diode array, a diode array test circuit electrically coupled to the diode array and operable to perform circuit failure detection during a test mode when a test input voltage is applied, the diode array test circuit includes an input resistor, an input voltage node, a buffered amplifier circuit, and a plurality of amplifier circuit switches. The apparatus further includes a current detector electrically coupled to the output of the buffered amplifier circuit and operable to determine, during the test mode, a current measurement of the pulse laser diode array.
A sensor arrangement for light sensing for light-to-frequency conversion. The sensor arrangement includes a photodiode, an analog-to-digital converter (ADC) operable to perform a chopping technique in response to a first clock signal (CLK1), and convert a photocurrent (IPD) into a digital comparator output signal (LOUT). The ADC includes a sensor input coupled to the photodiode, an output for providing the digital comparator output signal (LOUT), an integrator including an integrator input coupled to the sensor input and operable to receive an integrator input signal, a first set of chopping switches coupled to a first amplifier, a second set of chopping switches electrically coupled to an output of the first amplifier and electrically coupled to input terminals of a second amplifier, and an integrator output providing an integrator output signal (OPOUT).
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
An integrated sensing system for characterizing blood flow in a subject includes a light source assembly including a light source configured to emit light of a particular wavelength. The integrated sensing system includes an integrated circuit electrically connected to the light source assembly. The integrated circuit includes a light detector assembly including multiple light detectors configured to detect light of the particular wavelength; and a correlator configured to determining a delay between optical signals detected by respective light detectors of the light detector assembly.
A system including a multi-layer analog neural network that has a single layer of physical analog neurons that is re-usable for implementing a plurality of layers of the multi-layer analog neural network. Each of the physical analog neurons is configured to receive a neuron input and to process the neuron input to generate a neuron output that is fed as input to all physical analog neurons of the single layer, and each of the physical analog neurons includes a respective weight memory. The system controller is operable to obtain, for each physical analog neuron, a respective set of neuron weight vectors with each neuron weight vector corresponding to a respective layer of the plurality of layers of the multi-layer analog neural network; store, for each physical analog neuron, the respective set of neuron weights in the respective weight memory of the physical analog neuron.
An intermetal dielectric and metal layers embedded in the intermetal dielectric are arranged on a substrate of semiconductor material. A via hole is formed in the substrate, and a metallization contacting a contact area of one of the metal layers is applied in the via hole. The metallization, the metal layer comprising the contact area and the intermetal dielectric are partially removed at the bottom of the via hole in order to form a hole penetrating the intermetal dielectric and extending the via hole. A continuous passivation is arranged on sidewalls within the via hole and the hole, and the metallization contacts the contact area around the hole. Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/528 - Layout of the interconnection structure
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
A transconductor circuitry (10) with adaptive biasing comprises a first input terminal (ElOa) to apply a first input signal (inp), and a second input terminal (ElOb) to apply a second input signal (inn). A control circuit (200) is configured to control a first controllable current source (110) in a first current path (101) and a second controllable current source (120) in a second current path (102) in response to at least one of a first potential of a first node (N1) of the first current path (101) and a second potential of a second node (N2) of the second current path (102). The first node (N1) is located between a first transistor (150) and the first controllable current source (110), and the second node (N2) is located between a second transistor (160) and the second controllable current source (120).
A micro-electro-mechanical system, MEMS, microphone assembly comprises an enclosure defining a first cavity, and a MEMS microphone arranged inside the first cavity. The microphone comprises a first die with bonding structures and a MEMS diaphragm, and a second die having an application specific integrated circuit, ASIC. The second die is bonded to the bonding structures such that a gap is formed between a first side of the diaphragm and the second die, with the gap defining a second cavity. The first side of the diaphragm is interfacing with the second cavity and a second side of the diaphragm is interfacing with the environment via an acoustic inlet port of the enclosure. The bonding structures are arranged such that pressure ventilation openings are formed that connect the first cavity and the second cavity.
A capacitance to digital converter, CDC, has a first and a second reference terminal for receiving first and second reference voltages, a reference block comprising one or more reference charge stores and being coupled to the first and second reference terminals via a first switching block, a scaling block for providing at third and fourth reference terminals downscaled voltages from the first and second reference voltages depending on a scaling factor, first and second measurement terminals for connecting a capacitive sensor element, the first measurement terminal being coupled to the third and fourth reference terminals via a second switching block, and a processing block coupled to the reference block and to the second measurement terminal and being configured to determine a digital output signal based on a charge distribution between the sensor element and the reference block and based on the scaling factor, the output signal representing a capacitance value of the sensor element.
G01R 27/26 - Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants
G01D 5/24 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
H03M 3/00 - Conversion of analogue values to or from differential modulation
54.
SENSOR DEVICE, SENSOR MODULE, IMAGING SYSTEM AND METHOD TO OPERATE A SENSOR DEVICE
A sensor device is provided and includes an array of photodetectors. A readout circuit is connected to the array of photodetectors and provides dedicated readout paths for each photodetector in the array, respectively. Further, the readout circuit includes at least one control terminal. An array of time-to-digital converters is electrically connected to converter output terminals of the readout circuit. Depending on a control signal to be applied at the at least one control terminal , the readout circuit is arranged to electrically connect through the readout paths of photodetectors of a first subarray (11) to the converter output terminals of the readout circuit, respectively, thereby rendering the photodetectors of the first subarray active and photodetectors of a second subarray inactive.
An integrated optical biosensor module includes one or more light sources operable to produce light for emission from the module, and an integrated circuit chip including a photosensitive region. The photosensitive region includes one or more photodetectors operable to detect light produced by the one or more light sources and reflected by a subject that is outside the module. The integrated circuit chip is operable to determine a physiological condition of the subject based on signals from the one or more photodetectors. A clear mold covering encapsulates the one or more light sources, wherein the clear mold covering includes one or beam shaping elements each of which is disposed so as to intersect a path of a light beam from an associated one of the one or more light source.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration, pH-value using optical sensors, e.g. spectral photometrical oximeters
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
An optical device includes an emitter operable to emit a first light wave. The optical device also includes a detector operable to detect a second light wave that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave that is based on the first light wave. The optical device further includes an interference filter disposed on the detector. The interference filter includes a first filter portion and a second filter portion having a first set of layers formed from a first material and a second set of layers formed from a second, different material. The interference filter is operable to attenuate undesired light waves in multiple distinct environments based on the first and second sets of layers in the second filter portion.
Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.
An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side. The transducer further comprises an application specific integrated circuit, ASIC, die having an evaluation circuit configured to detect a deflection of the MEMS diaphragm, in particular of the second side of the MEMS diaphragm. The MEMS die is arranged with respect to the ASIC die such that a gap with a gap height is formed between the second side of the diaphragm and a first surface of the ASIC die and the MEMS diaphragm, the ASIC die and a suspension structure of the MEMS die delineate a back volume of the integrated optical transducer.
A humidity sensor system (10) includes a monolithically integrated semiconductor device (12). The monolithically integrated semiconductor device (12) includes an optical waveguide (14), a thermo-electric cooling device (16), a temperature measurement probe (18), and control circuitry (26) operable to cause the thermo-electric cooling device (16) to adjust a temperature of the monolithically integrated semiconductor device (12). The optical waveguide (14) is operable to receive an input optical signal from a light source (20) and to provide an output optical signal for sensing by a light detector (22). The humidity sensor system (10) further includes processing circuitry operable to receive output signals from the light detector (22) and from the temperature measurement probe (18) and operable to determine a relative humidity based on the output signals from the light detector (22) and the temperature measurement probe (18).
G01N 25/68 - Investigating or analysing materials by the use of thermal means by investigating moisture content by investigating dew-point by varying the temperature of a condensing surface
Techniques are described for portable computing devices and other apparatus that include an ambient light sensor. The techniques can be particularly advantageous for situations in which the ambient light sensor is disposed behind a display screen of a host device such that ambient light detected by the sensor passes through the light emitting display before being detected by the sensor.
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
61.
Calculation processor and calculation method for determining an exponential function
A calculation processor for determining a digital output value from a digital input value based on an exponent value a, the processor comprising a first calculation block, a second calculation block and a final calculation block. The first calculation block initializes an intermediate value and an error value depending on a position of a Most Significant Bit of a significant part of the input value. The second calculation block is configured to perform repeatedly, until an exit criterion is fulfilled, the incrementation of a counter value, the determination of a power error value based on the error value and, if the power error value is larger than or equal to an error threshold, adjustment of the intermediate value y by multiplying the intermediate value with an adaptation value and setting the error value to the power error value divided by the base value. If the power error value is smaller than the error threshold, the error value is set to the power error value. The final calculation block is configured to set the output value to the intermediate value.
A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
63.
Method for manufacturing a semiconductor device and semiconductor device
A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.
Modulated light is generated using a light source of a sensor module. Using a photodetector of the sensor module, an intensity of modulated light reflected from an object towards the photo detector is measured over a period of time. An electronic control device bins the measured intensity of the reflected modulated light according to a plurality of temporal bins, determines a first temporal bin having the greatest intensity among the plurality of temporal bins, and estimates a distance between the sensor module and the object based on a first temporal bin, and one or more additional temporal bins of the plurality of temporal bins.
An apparatus includes a display screen, an ambient light sensor disposed behind the display screen, and an electronic control unit operable to control a brightness of the display screen based on a duty cycle of a PWM signal. The electronic control unit is operable to sample an output of the ambient light sensor, identify a pair of consecutive samples of the ambient light sensor output that represent a greatest difference in magnitudes of their values, and to estimate a brightness of the display screen based on the difference.
G09G 3/3266 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] - Details of drivers for scan electrodes
H04M 1/02 - Constructional features of telephone sets
An apparatus includes a display screen, an ambient light sensor disposed behind the display screen, and an electronic control unit. An integration time of the ambient light sensor is unsynchronized to a frame rate of the display screen. The electronic control unit is operable to control a brightness of the display screen based on a duty cycle of a PWM blanking signal, wherein at least one OFF time of the PWM blanking signal occurs fully within a first integration period of the ambient light sensor, and wherein at least one other integration period ON time of the PWM blanking signal occurs fully during an ON time of the PWM blanking signal. The electronic control unit is further operable to acquire samples of an output of the ambient light sensor, to identify a highest value and a lowest value from among a consecutive group of the samples, and to estimate a magnitude of an ambient light signal based at least in part on the highest value and the lowest value.
G09G 3/3258 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
A particulate matter sensor module includes a light source and a light detector mounted on a substrate. A housing is attached to the substrate and includes first and second sections attached to one another in a stack over the substrate such that the first section is disposed between the substrate and the second section. The first and second sections, in combination, define a light reflection chamber, a fluid flow conduit, a particle-light interaction chamber, and a light trap chamber. The first section has a first aperture through which light emitted by the light source can pass to a reflective surface within the light reflection chamber. The reflective surface is configured to reflect the light toward the particle-light interaction chamber where the light can interact with particles in a fluid flowing in the fluid flow conduit. The first section has a second aperture through which light scattered in the particle-light interaction chamber as a result of interaction with one or more of the particles can pass for sensing by the detector. The fluid flow conduit includes a fluid inlet portion having an end coupled directly to the particle-light interaction chamber.
A system includes a first spectral modulator, a second spectral modulator, a light guide optically, a photodetector, and an electronic control device. The first spectral modulator receives sample light, and modulates the sample light according to a first spectral response pattern to produce first modulated light. The second spectral modulator receives the first modulated light from the first spectral modulator via the light guide, modulates the first modulated light according to a second spectral response pattern to produce second modulated light, and transmits the second modulated light to the photodetector. The photodetector measures an intensity of the second modulated light incident on the photodetector, and generates one or more signals corresponding to the intensity of the second modulated light. The electronic control device determines a spectral distribution of the sample light based on the one or more signals.
A sensor arrangement to sense an external signal comprises a sensor (100) and a charge generator (200) to generate a compensation current (Ic) to compensate the sensor current. A charge generator (200) comprises a first transistor (210) having a parasitic capacitor (212) and a first conductive path. The charge generator (200) comprises a second transistor (220) having a second conductive path being coupled in series to the first transistor (210) and coupled to the output node (O200) of the charge generator (200). The control circuit (600) is configured to control the conductivity of the respective first and second conductive path of the first and the second transistor (210, 220) of the charge generator (200) so that the sensor current is compensated by the compensation current (Ic).
The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.
The present disclosure describes a method and apparatus for enabling an imaging sensor to perform Time-of-Flight measurements while requiring less histogram memory and in many cases less power consumption. A light source is operated to cause multiple light emissions and a coarse/estimated distance is determined based on a first echo received based on the first light emission. A histogram is saved and a fine distance is calculated from the coarse distance and data derived from the echo of a second light emission.
G01S 17/26 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein the transmitted pulses use a frequency-modulated or phase-modulated carrier wave, e.g. for pulse compression of received signals
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
G01S 7/48 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group
A charge pump circuit arrangement includes a multitude of capacitors of a first and a second group controlled by non-overlapping clock pulses. The capacitors are partly realized in a semiconductor substrate including a deep well doping region and a high voltage doping region surrounded by the deep well doping region. Switches are connected to a pair of capacitors to control the deep well doping regions with signals in phase with the corresponding clock signal.
H02M 3/07 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.
A particulate matter sensor including a light source, a photodetector, and a particle filter. The light source and the photodetector are arranged in the same plane as the particle filter. Integrated particulate matter sensors are operable to detect particulate matter by measuring an optical characteristic of a filter.
A position encoder arrangement is configured to detect the position of a movable source based on a source field, which is a magnetic field or an electric field, emitted by the source. The position encoder arrangement includes a number of sensor elements that are evenly distributed and each is configured to provide a sensor value based on the source field at the sensor element's location. The arrangement further includes an evaluation unit that is configured to determine a fine position value for the position of the movable source, and to determine from the sensor values a trustworthiness of the fine position value and/or an error flag indicating whether a failure status of the position encoder arrangement is present.
G01D 3/08 - Measuring arrangements with provision for the special purposes referred to in the subgroups of this group with provision for safeguarding the apparatus, e.g. against abnormal operation, against breakdown
G01D 5/244 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains
A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.5 times the lateral extent of the via in the lateral direction, and the lateral extent of the contact layer is smaller than the lateral extent of the via or the lateral extent of the contact layer amounts to at least 2.5 times the lateral extent of the via.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/528 - Layout of the interconnection structure
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
77.
Analog-to-digital converter and method to operate an analog-to-digital converter
An analog-to-digital converter (ADC) is based on single-bit delta-sigma quantization. The ADC includes an integrator, a threshold detector, a feedback block, a range control circuit and an output processing block. The ADC is configured to, based on its own generated digital bitstream, adjust the magnitude of a subtrahend signal in order to achieve autonomous auto-ranging of the ADC during the integration time of a measurement. In particular, the auto-ranging allows for the efficient conversion of an analog input signal with high dynamic range, for example ambient light, to a digital output signal.
A noise cancellation enabled audio device, in particular a headphone, comprises a speaker which is arranged within the audio device and which has a preferential side for sound emission. The audio device further comprises a first cavity enclosing a first volume of air, where the first cavity is arranged at the preferential side for sound emission of the speaker, and an error microphone which is arranged within a second cavity within the audio device. The first cavity comprises a first opening to the outside of the audio device and the second cavity comprises a second opening to the outside of the audio device. The first and the second opening are both arranged on a side of the audio device which is arranged to face an ear canal of a user. Furthermore, a noise cancellation system is provided.
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
A filter assembly includes comprises an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.
An analog-to-digital converter comprises a first integrator (40), a first converter input (19), a first reference voltage input (34), a capacitor array (68) comprising capacitor elements (171), and a rotation frequency control unit (37) providing a rotation signal (SRO) with at least two different values of a rotation frequency (fR). A first subset of capacitor elements (171) of the capacitor array (68) is coupled to the first converter input (19) and to an input side of the first integrator (40) in a first phase and is coupled to the first reference voltage input (34) and to the input side of the first integrator (40) in a second phase as a function of the rotation signal (SRO).
H03M 3/00 - Conversion of analogue values to or from differential modulation
H03M 1/46 - Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
81.
Semiconductor devices with an electrically tunable emitter and methods for time-of-flight measurements using an electrically tunable emitter
The semiconductor device comprises an emitter of electromagnetic radiation, a photodetector enabling a detection of electromagnetic radiation of a specific wavelength, a filter having a passband including the specific wavelength, the filter being arranged on the photodetector, the emitter and/or the filter being electrically tunable to the specific wavelength, and a circuit configured to determine a time elapsed between emission and reception of a signal that is emitted by the emitter and then received by the photodetector.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
82.
Testing apparatus for singulated semiconductor dies with sliding layer
The testing apparatus for singulated semiconductor dies comprises a nesting frame and a bottom part, which form a testing device nest adapted to the size of a semiconductor die. A pushing device is provided for an alignment of the semiconductor die in the testing device nest. An engineering plastic layer on the bottom part forms a surface on which the semiconductor die slides during its alignment.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01R 1/04 - Housings; Supporting members; Arrangements of terminals
A method for light-to-digital conversion includes setting a time integrator circuit into a reference condition and starting to integrate charge from a sensor device for the duration of an integration time. An integration signal is generated and is indicative of the integrated charge. The integration signal is compared with an adjustable reference signal. A first count is generated when the comparison indicates that the integration signal has reached an integration range, wherein the integration range is defined by a low and a high voltage. A second count is generated when the comparison indicates that the integration signal has reached the adjustable reference signal. The adjustable reference signal is incremented in discrete steps when a second count has been generated. Then, the time integrator circuit is reset into the reference condition, when the comparison indicates that the integration signal has reached the integration range. The generated first counts is collected as first count signal and the generated second counts are collected as second count signal. Finally, a digital output signal is generated depending on the first count signal and the second count signal.
H03M 1/46 - Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
84.
High-voltage output driver for a sensor device with reverse current blocking
A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to the gate node (GMP0) of the driver transistor (MP0).
H03K 19/003 - Modifications for increasing the reliability
H02H 3/18 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to reversal of direct current
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
H03K 19/0185 - Coupling arrangements; Interface arrangements using field-effect transistors only
85.
Particle density sensor using evanescent wave of waveguide
The particle sensor device comprises a substrate, a photodetector, a dielectric on or above the substrate, a source of electromagnetic radiation, and a through-substrate via in the substrate. The through-substrate via is exposed to the environment, in particular to ambient air. A waveguide is arranged in or above the dielectric so that the electromagnetic radiation emitted by the source of electromagnetic radiation is coupled into a portion of the waveguide. A further portion of the waveguide is opposite the photodetector, so that said portions of the waveguide are on different sides of the through-substrate via, and the waveguide traverses the through-substrate via.
A method is proposed for sensing light being incident on an electronic device. The electronic device comprises a display and a light sensor arrangement which is mounted behind the display such as to receive incident light through the display. The method comprises the step of repeatedly switching the display on and off depending on a modulation signal, wherein a sub-frame is defined by an on-state and a consecutive off-state of the display. The modulation signal depends on at least one modulation parameter. In a first sub-frame a display brightness is set to a first level depending on a first value of the at least one modulation parameter. Then a first frame count is determined by integrating the incident light by means of the light sensor arrangement during the first sub-frame. In a second sub-frame the display brightness is set to a second level depending on a second value of the at least one modulation parameter. Then a second frame count is generated by integrating the incident light by means of the light sensor arrangement during the second frame. Finally, an ambient light level is determined depending on the first frame count and the second frame count.
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
H04M 1/02 - Constructional features of telephone sets
87.
Pumping structure, particle detector and method for pumping
A pumping structure comprises at least two membranes, at least two actuation chambers, one evaluation chamber comprising an opening to the outside of the pumping structure, and at least three electrodes. Each membrane is arranged between two electrodes in a vertical direction which is perpendicular to the main plane of extension of the pumping structure, each actuation chamber is arranged between one of the membranes and one of the electrodes in vertical direction, and each actuation chamber is connected to the evaluation chamber via a channel. Furthermore, a particle detector and a method for pumping are provided.
A substrate is provided with a dielectric, a metal layer embedded in the dielectric, and a metallic layer arranged on the metal layer between the substrate and the metal layer. A via hole is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer is applied in the via hole and removed from above a contact area of the metal layer, and the metallic layer is completely removed from the contact area. A metallization is applied in the via hole on the contact area.
An emitter of electromagnetic radiation is configured for modes of operation providing fields of illumination of different widths, and a photodetector is configured for time-of-flight and proximity measurements by detecting electromagnetic radiation that is emitted by the emitter and reflected to the photodetector. The emitter is operated by a driver, which is configured for an alternation between the modes of operation. A time-of-flight measurement is performed when the field of illumination is narrow, and a proximity or ambient light measurement is performed when the field of illumination is wide.
A relaxation oscillator with an aging effect reduction technique comprises a comparator (CP) coupled with its input side (CP1, CP2) to a network comprising at least one capacitor (C, C1, C2), a plurality of transistors (M1, M2, M3, M4) and a plurality of controllable switches (SW11, . . . , SW8, SW111, . . . , SW180). The relaxation oscillator uses a switching method such that the roles of current/voltage generator's transistor and current mirror transistor are periodically swapping by the output signal of the relaxation oscillator. Reducing mismatch of operating points between current/voltage generator and current minor transistors achieves a decrease of frequency degradation caused by aging effect.
H03K 4/501 - Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
A driving circuit (10) to generate a signal pulse for operating a light-emitting diode (20) comprises an external terminal (LEDK, LEDA) to connect the light-emitting diode (20) to the driving circuit (10). In a first operating state/pre-charge state of the driving circuit (10), a first controllable switching circuit (100) connects a first side (301) of a capacitor (300) to a reference potential (Vref) and a second controllable switch (200) connects a second side (302) of the capacitor (300) to one of a supply and ground potential (VDD, VSS). In a second operating state of the driving circuit (10), the first controllable switching circuit (100) connects the first side (301) of the capacitor (300) to said one of the supply and ground potential (VDD, VSS) and the second controllable switch (200) connects the second side (302) of the capacitor (300) to the external terminal (LEDK, LEDA) to provide a signal pulse for operating the light emitting diode.
H03K 3/57 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
92.
TIME-OF-FLIGHT ARRANGEMENT AND METHOD FOR A TIME-OF-FLIGHT MEASUREMENT
A time-of-flight arrangement (10) comprises a laser (15), a laser driver (12), a clock generator (11) that is coupled to the laser (15) via the laser driver (12), a photodiode circuit (50) and a time-to-digital converter (14). The photodiode circuit (50) comprises an avalanche photodiode (51), a quenching circuit (52), a diode node (53) and a readout circuit (54). The quenching circuit (52) is coupled via the diode node (53) to the avalanche photodiode (51). An input of the readout circuit (54) is connected to the diode node (53). At least one of the clock generator (11) and the readout circuit (54) is coupled on its output side to the input side of the time-to-digital converter (14).
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
H04N 13/254 - Image signal generators using stereoscopic image cameras in combination with electromagnetic radiation sources for illuminating objects
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
G01B 11/25 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. moiré fringes, on the object
A phase-locked loop circuit comprises an oscillator having a plurality of operating curves and being suitable for generating an output signal. In a calibration state the oscillator is trimmed to an operating curve for use in a normal operation state. The phase-locked loop circuit further comprises a phase/frequency detector being suitable for generating at least one error signal based on an input signal and a feedback signal generated on the basis of the output signal. The phase-locked loop circuit further comprises a loop filter being suitable for generating a loop-filter signal based on the at least one error signal, the loop-filter signal being applied to the oscillator in the normal operation state. The phase-locked loop circuit further comprises a calibration circuit being suitable for trimming the oscillator to the operating curve for use in the normal operation state on the basis of the at least one error signal.
H03L 7/06 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
H03L 7/10 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
An oscillator circuit arrangement comprises an inverter having input and output terminals that are to be connected to a crystal device. An automatic gain control device controls a current source that supplies current to the inverter. First and second diode devices having different orientation are connected between the input and the output of the inverter. The oscillator consumes low power and has a fast recovery time after an electromagnetic interference event. The oscillator can be used in electronic labels.
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
A method for light sensing senses the light during a sub-frame of a picture frame operated display. The sensing is performed during an adaptive observation window which is determined in dependence on the duty cycle of the operation of the display. A calculation that uses the light sensed during the observation window and the light sensed during the sub-frame delivers a value indicative of the amount of received ambient light.
G01J 1/32 - Photometry, e.g. photographic exposure meter by comparison with reference light or electric value intensity of the measured or reference value being varied to equalise their effects at the detector, e.g. by varying incidence angle using variation of intensity or distance of source using electric radiation detectors adapted for automatic variation of the measured or reference value
A noise cancellation filter structure for a noise cancellation enabled audio device, in particular headphone, comprises a noise input for receiving a noise signal and a filter output for providing a filter output signal. A first noise filter produces a first filter signal by filtering the noise signal and a second noise filter produces a second filter signal by filtering the noise signal. The second noise filter has a frequency response with a non-minimum-phase, in particular maximum-phase. A combiner is configured to provide the filter output signal based on a linear combination of the first filter signal and the second filter signal.
G10K 11/16 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
G10K 11/178 - Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using interference effects; Masking sound by electro-acoustically regenerating the original acoustic waves in anti-phase
The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.
H01L 31/102 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
An oscillator circuit arrangement comprises a gain stage and a feedback loop that includes a crystal device. A clock signal monitor circuit is connected to an output of the gain stage and detects a frequency shift in the clock signal or a loss of oscillation. The current through the gain stage is controlled in response to a control signal generated by the clock signal monitor circuit.
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
H03L 7/08 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H03L 7/18 - Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
100.
Phase-locked loop circuitry having low variation transconductance design
A phase-locked loop circuitry (200) having low variation transconductance design comprises a voltage controlled oscillator structure (308) to provide an output signal (Fosc) having an oscillation frequency. The voltage controlled oscillator structure (308) comprises a voltage-to-current converter circuit (312) and a current controlled oscillator circuit (314). The voltage-to-current converter circuit is designed with a low variation transconductance. The voltage-controlled oscillator circuit (200) has a characteristic curve being independent of different PVT (processes, supply voltages and temperature) conditions to ensure that the phase-locked loop circuitry (200) is stable under different PVT condition.
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H03L 7/089 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
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