Abstract

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of doped piezoelectric layer material and a second layer of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of doped piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector including a first pair of metal electrode layers may be electrically and acoustically coupled with the first layer of doped piezoelectric material and the second layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
• H03H 9/15 - Constructional features of resonators consisting of piezoelectric or electrostrictive material
• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
• H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

IPC Classes  ?

• H01L 41/08 - Piezo-electric or electrostrictive elements
• H01L 41/22 - Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
• H01L 41/047 - Electrodes
• H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
• H01L 41/187 - Ceramic compositions

Abstract

Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.

IPC Classes  ?

• H01L 41/08 - Piezo-electric or electrostrictive elements
• H01L 41/22 - Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
• H01L 41/047 - Electrodes
• H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
• H01L 41/187 - Ceramic compositions

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
• H03H 9/15 - Constructional features of resonators consisting of piezoelectric or electrostrictive material
• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
• H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The resonant frequency of the BAW resonator may be in a super high frequency band or an extremely high frequency band.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient

Abstract

Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 3/013 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient

Abstract

Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An acoustic wave device may include a substrate. The acoustic wave device may include first and second layers of piezoelectric material acoustically coupled with one another, in which the first layer of piezoelectric material has a first piezoelectric axis orientation, and the second layer of piezoelectric material has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The acoustic wave device may include an interposer layer interposed between the first and second layers of piezoelectric material. The interposer may facilitate an enhancement of an electromechanical coupling coefficient of the acoustic wave device.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 9/05 - Holders or supports
• H03H 9/58 - Multiple crystal filters
• H03H 9/64 - Filters using surface acoustic waves

Abstract

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material having a first piezoelectric axis orientation. The bulk acoustic wave (BAW) resonator may comprise a multi-layer acoustic reflector, e.g., a multi-layer metal top acoustic reflector electrode, including a first pair of top metal electrode layers. The first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite a piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.

IPC Classes  ?

• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators - Details
• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
• H03H 9/64 - Filters using surface acoustic waves