The present invention provides a power conversion circuit that can be operated while suppressing degradation in the properties of a gallium oxide semiconductor. This power conversion circuit at least includes a switching element, and a control unit that detects short-circuiting of the switching element and performs an off-operation for the switching element on the basis of the detection result, wherein the switching element includes a gallium oxide semiconductor, and the control unit controls the off-operation of the switching element such that the time from the occurrence of the short-circuit to the off-operation is less than 1.4 μsec.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
2.
CRYSTAL FILM, AND METHOD FOR PRODUCING CRYSTAL FILM
Provided are: a crystal film which is reduced in dislocation extending along the thickness direction; and a method for producing the crystal film with excellent relative yield. The crystal film has a corundum structure and contains a crystalline oxide containing gallium, and a cross-section of the crystal film which is cut in the thickness direction has a linear first crystal defect extending along the thickness direction and a linear second crystal defect including an inclining part that inclines from the thickness direction, in which an upper end of the first crystal defect is connected to the inclining part or is positioned below the inclining part.
The present invention provides a technology which is capable of enhancing the withstand voltage of a semiconductor device that comprises a semiconductor region or semiconductor layer which contains a crystalline oxide semiconductor containing gallium without having a p-type semiconductor region or semiconductor layer. A semiconductor device according to the present invention is provided with: a semiconductor layer in which a depletion layer extends; and an electrode which is arranged on the semiconductor layer directly or by the intermediary of another layer. The semiconductor layer has a first region that contains, as a main component, a crystalline oxide semiconductor containing gallium and a second region that contains, as a main component, an oxide containing gallium; and the second region has a linear crystal defect region in a cross-section that is perpendicular to the upper surface of the semiconductor layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a technique with which it is possible to increase the breakdown voltage characteristics of a semiconductor region that includes a crystalline oxide semiconductor that includes gallium, or a semiconductor device that has a semiconductor layer, without relying on a p-type semiconductor region or semiconductor layer. This semiconductor device comprises a semiconductor layer, and an electrode that is located directly on the semiconductor layer or with another layer interposed therebetween. The semiconductor layer has a first region that includes as a main component a crystalline oxide semiconductor that includes gallium, and a second region that includes as a main component an oxide that includes gallium, the second region having a lower carrier density than the first region, and at least a portion thereof being positioned at a depth of 1.0 μm or more from an upper surface of the semiconductor layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
An objective of the present invention is to provide a semiconductor device in which an interface deterioration between constituent elements is suppressed. This semiconductor device comprises: a first wiring layer; a holding layer; a first semiconductor element and a second semiconductor element having a greater thickness than the first semiconductor element, the first and second semiconductor elements provided between the first wiring layer and the holding layer; an insulating body in which the first semiconductor element and the second semiconductor element are buried; and a thickness adjuster which is provided between the first semiconductor element and the holding layer, wherein the linear expansion coefficient of the thickness adjuster is a value between the linear expansion coefficient of the first semiconductor element and the linear expansion coefficient of the holding layer.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
The purpose of the present invention is to provide a semiconductor device in which interfacial degradation between constituent elements is suppressed. The semiconductor device comprises: a first wiring layer; a carrying layer; a first semiconductor element and a second semiconductor element that are colocated between the first wiring layer and the carrying layer, the second semiconductor element having a thickness greater than the thickness of the first semiconductor element; an insulator in which the first semiconductor element and the second semiconductor element are embedded; and a thickness adjusting portion provided between the first semiconductor element and the carrying layer. The linear coefficient of expansion of the thickness adjusting portion is a value between the linear coefficient of expansion of the semiconductor element and the linear coefficient of expansion of the insulator.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
The purpose of the present invention is to provide a semiconductor device with improved reliability with respect to heat dissipation and/or electrical connectivity, and the like. This semiconductor device comprises: a first wiring layer; a retention layer; a semiconductor element arranged between the first wiring layer and the retention layer and including at least a semiconductor layer and a first electrode arranged on a first surface of the semiconductor layer; an insulator in which at least part of the semiconductor element is embedded; and a first connection part that electrically connects the first wiring layer and the first electrode. The connection area of the first connection part and the first electrode accounts for 45% or more of the area of an exposed portion of the first electrode.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
Provided are a layered structure, a semiconductor element, and a semiconductor device that are particularly useful in power devices and undergo less degradation at high temperatures. According to the present invention, a layered structure comprises at least: a semiconductor layer that includes a crystalline oxide semiconductor as a principal component; and a conductive substrate on which the semiconductor layer is layered. The conductive substrate includes at least a first metal and a second metal that is different from the first metal. The conductive substrate has, within a plane, a first direction and a second direction that is orthogonal or substantially orthogonal to the first direction. A first coefficient of linear expansion that is the coefficient of linear expansion of the conductive substrate in the first direction is the same or substantially the same as a second coefficient of linear expansion that is the coefficient of linear expansion in the second direction.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides: a multilayer structure which is reduced in deterioration at high temperatures and is useful especially for power devices; a semiconductor element; and a semiconductor device. The present invention provides a multilayer structure which is provided with at least a semiconductor layer that contains, as a main component, a crystalline oxide semiconductor, and a conductive substrate that is superposed on the semiconductor layer, wherein: the multilayer structure has a first direction and a second direction, which is perpendicular or generally perpendicular to the first direction, within a plane that is perpendicular to the stacking direction of the multilayer structure; a first linear expansion coefficient that is the linear expansion coefficient of the conductive substrate in the first direction is lower than a second linear expansion coefficient that is the linear expansion coefficient of the conductive substrate in the second direction; and a third linear expansion coefficient that is the linear expansion of the semiconductor layer in the first direction is lower than a fourth linear expansion coefficient that is the linear expansion coefficient of the semiconductor layer in the second direction.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided are a laminated structure in which there is reduced deterioration at high temperatures and which is particularly useful for power devices, a semiconductor element, and a semiconductor device. The laminated structure comprises at least a semiconductor layer that includes a crystalline oxide semiconductor as the main component, and a conductive substrate laminated on the semiconductor layer, wherein the conductive substrate includes at least a first metal, and a second metal having higher Young's modulus than the first metal, and the mass ratio of the second metal in the conductive substrate is larger than the mass ratio of the first metal.
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided is a semiconductor apparatus that is useful particularly for power devices and that has excellent semiconductor characteristics. This semiconductor apparatus is provided with at least an n-type oxide semiconductor layer, a first p-type oxide semiconductor layer that forms a main junction together with the n-type oxide semiconductor layer, and a hole supply layer, and is characterized in that the hole supply layer is formed of a second p-type oxide semiconductor layer that is different from the first p-type oxide semiconductor layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided are a crystal film having excellent crystal quality, and a method for producing a high-quality crystal film with reduced dislocation, that are useful in semiconductor devices or the like. A method for producing a crystal film that includes forming uneven portions composed of recesses or protrusions on a crystal growth plane of a crystal substrate, either directly or with another layer interposed therebetween, and then forming a crystal film, wherein the crystal growth plane is inclined at an angle of less than 90 degrees from the c-plane, and the uneven portions are arranged along a direction parallel to the line of intersection of the crystal growth plane and the c-plane.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
13.
DESIGN ASSISTANCE DEVICE, DESIGN ASSISTANCE PROGRAM, AND DESIGN ASSISTANCE METHOD
Provided are a design assistance device, a design assistance program, and a design assistance method which are capable of determining the necessity of a height adjustment and making a detailed design of a height adjustment member in a short period of time while ensuring a degree of freedom in selecting electronic components when a plurality of electronic components with different heights are disposed on a component-embedded substrate. This design assistance device for an electronic component-embedded substrate comprises: a height difference calculation unit which calculates the difference in height between a first electronic component mounted within the electronic component-embedded substrate and a second electronic component mounted within the electronic component-embedded substrate, from first component information including the height information about the first electronic component and second component information including the height information about the second electronic component; and a height adjustment necessity determination unit which compares the difference and a preset reference value and determines whether the height adjustment member disposed on the first electronic component or the second electronic component is necessary.
Provided are a design assistance device, a design assistance program, and a design assistance method with which it is possible to improve the degree of freedom in designing of pin arrangement of a child substrate (component embedded substrate) while considering component arrangement on a mother substrate (mounting substrate). This design assistance device is for a component embedded substrate in which an electronic component constituting at least a part of a circuit is embedded, and the design assistance device comprises at least: a component information acquisition unit that acquires component information concerning an electronic component to be mounted in the component embedded substrate; a pad information acquisition unit that acquires electrode pad information concerning the types and the number of electrode pads to be arranged on a component embedded substrate surface on the basis of the component information; a mounting arrangement information acquisition unit that acquires arrangement information of the component embedded substrate and other components on the mounting substrate on which the component embedded substrate is mounted; and a pad arrangement selection unit that selects the arrangement of the electrode pads in the component embedded substrate surface on the basis of the mounting arrangement information and the electrode pad information.
G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
A design assistance device, a design assistance program and a design assistance method are provided which, in design involving derivation of a required minimum area for a component-embedded substrate, enable design that takes into account the elements characteristic of the component-embedded substrate. This design assistance device for a component-embedded substrate comprising embedded semiconductor components that constitute at least part of a circuit, is provided with: a component information acquisition unit which acquires component information relating to electronic components mounted in the component-embedded substrate; and a required minimum area calculation unit which calculates the required minimum area for the component-embedded substrate on the basis of the shape information of the electronic components included in the aforementioned component information, and electric property information of the circuit and/or electronic component.
A germanium oxide-containing oxide semiconductor with excellent electrical properties is provided. An oxide semiconductor film containing germanium oxide is achieved using an oxide semiconductor formation method characterized by atomizing or dropletizing a raw material solution that contains a dopant element, supplying a carrier gas to the obtained atomized droplets, conveying the atomized droplets onto the substrate by means of the carrier gas, and subsequently thermally reacting the atomized droplets on the substrate, wherein the carrier density is at least 1.0×1018/cm3.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides an oxide crystal that has a favorable orientation, that has germanium as the main component, and that has a rutile-type structure. By using mist CVD under specific conditions to form a germanium oxide film on a titanium oxide substrate having a rutile-type structure, obtained is an oxide crystal containing an oxide having a rutile-type structure, wherein: the oxide crystal is oriented in the crystal axis direction perpendicular or parallel to the c axis; and the atomic ratio of germanium is greater than 0.5 in metal elements in the oxide crystal.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides a crystalline oxide film in which abnormal grains are reduced and which has favorable crystallinity. A raw material solution containing germanium is atomized or made into droplets, a carrier gas is supplied to the obtained atomized droplets, the carrier gas carries the atomized droplets onto a crystal substrate having a tetragonal crystal structure, and the atomized droplets are subjected to a thermal reaction on the crystal substrate, so as to obtain a crystalline oxide film containing an oxide of germanium, wherein the area ratio of abnormal grains as found by SEM observation of the surface is not more than 3%.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided is a semiconductor apparatus that has a high withstand voltage, is useful for power devices, and comprises at least: a crystalline oxide semiconductor layer (8) including a channel layer (6) and a drift layer (7); and a gate electrode (5a) provided on the channel layer with a gate-insulating film (4a) interposed therebetween. The crystalline oxide semiconductor layer includes a crystal defect region (2) between the channel layer and the drift layer.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides a semiconductor device that has excellent resistance to pressure and is especially useful for power devices. This semiconductor device at least comprises: a crystalline oxide semiconductor layer (8) that includes a channel layer (6), a drift layer (7), and a source region (1); a gate electrode (5a) that is disposed on the channel layer with a gate insulator film (4a) therebetween; a current interruption region (2) that is disposed between the channel layer and the drift layer; and a source electrode (5b) that is provided on the source region. The current interruption region is formed from a high-resistivity layer, and the source electrode forms a contact with the current interruption region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
21.
POWER CONVERSION CIRCUIT, POWER CONVERSION DEVICE, AND CONTROL SYSTEM
Provided are a power conversion circuit and a power conversion system capable of improving short-circuit resistance while maintaining switching characteristics. The power conversion circuit comprises: a first switching element and a second switching element that are connected in parallel with each other; and a control unit which controls on/off of each switching element, wherein a current value at a cross point between a current-voltage characteristic when a forward current is passed through the first switching element and a current-voltage characteristic when a current is passed through the second switching element is greater than the rated current of the power conversion circuit.
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/12 - Modifications for increasing the maximum permissible switched current
The present invention provides a semiconductor device that has excellent pressure resistance and is particularly useful in power devices. Provided is a semiconductor device which comprises at least a crystalline oxide semiconductor layer (8) including a channel layer (6) and a drift layer (7), a gate electrode (5a) disposed upon the channel layer with a gate insulator film (4a) therebetween, and a current-interrupting layer (2) disposed between the channel layer and the drift layer, wherein: the current-interrupting layer contains a dopant element; and the current-interrupting layer includes a region in which the dopant element concentration is at least 5.0×1017/cm3.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The present invention provides a semiconductor device that has excellent pressure resistance and is particularly useful in power devices. Provided is a semiconductor device which comprises at least a crystalline oxide semiconductor layer including a channel layer and a drift layer, and a gate electrode disposed upon the channel layer with a gate insulator film therebetween, and which has a current-interrupting layer between the channel layer and the drift layer, the semiconductor device being characterized in that: the drift layer includes a first crystalline oxide as a main component; the current-interrupting layer includes a second crystalline oxide as a main component; and the compositions of the first crystalline oxide and the second crystalline oxide differ.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
The purpose of the present invention is to provide a semiconductor device in which various types of semiconductor elements can be mounted at high density. Provided is a semiconductor device comprising first and second semiconductor elements that are juxtaposed between a first wiring member including a first substrate and a second wiring member including a second substrate and are electrically connected to the first and second substrates, respectively, wherein the first semiconductor element and the first wiring member are directly connected to each other, and the second semiconductor element and the first wiring member are connected via a conductive member.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
The present invention provides a semiconductor device that is particularly useful as a power device and has reduced element resistance. Provided is a semiconductor device that comprises: an oxide semiconductor layer that includes at least one source region; and a source electrode that is arranged on the source region. The source region comprises at least: an n+ semiconductor layer; and an n++ semiconductor layer that is arranged on the n+ semiconductor layer and has a greater carrier density than the n+ semiconductor layer. The n++ semiconductor layer is an epitaxial layer.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/336 - Field-effect transistors with an insulated gate
[Problem] The purpose is to provide a reliable semiconductor device and semiconductor system with which it is possible to reduce the influence of thermal stress while improving heat dissipation of a semiconductor element. [Solution] A semiconductor device comprising a stack in which at least one semiconductor element is disposed between a first layer and a second layer, wherein a metal layer is provided on the upper side of the first layer with a first electrically insulating material therebetween, and a second electrically insulating material is provided in at least a part of a gap between the first layer and the second layer, the first electrically insulating material having an elastic modulus lower than that of the second electrically insulating material.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
One object of the present invention is to propose a structure for preventing the injection of holes into a gate insulating film. This semiconductor device comprises a gate insulating film, a hole blocking layer disposed in contact with the gate insulating film, and an oxide semiconductor layer disposed in contact with the hole blocking layer, wherein the hole blocking layer is provided between the gate insulating film and the oxide semiconductor layer.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/336 - Field-effect transistors with an insulated gate
Provided is a semiconductor device having an excellent heat dissipation effect for a crystalline oxide semiconductor layer. This semiconductor device includes: a gate electrode of which at least a part is embedded in a crystalline oxide semiconductor layer; and a heat dissipation part having a higher thermal conductivity than the crystalline oxide semiconductor layer, wherein at least a portion of the heat dissipation part is disposed in the vicinity of an embedded end portion of the gate electrode in the crystalline oxide semiconductor layer and/or at a position deeper than the embedded end portion, and thus the heat dissipation effect for the crystalline oxide semiconductor layer is made more efficient and more excellent.
The present invention provides a semiconductor device which has an efficient electric field attenuation effect with respect to a crystalline oxide semiconductor layer. With respect to a semiconductor device which comprises a gate electrode that is at least partially buried in a semiconductor layer, a deep p layer that is at least partially buried in the semiconductor layer to a position that is equal to or deeper than the position of the buried lower end of the gate electrode, and a channel layer, the deep p layer is composed of a crystalline oxide semiconductor, and the electric field of the crystalline oxide semiconductor is efficiently attenuated by having the carrier concentration thereof higher than that of the channel layer, thereby having a good electric field distribution within the semiconductor layer or within a gate insulating layer.
Provided are a power conversion circuit that has reduced radiation noise in the entire circuit and a power conversion system. The power conversion circuit comprises at least a switching element (for example, a MOSFET, etc.) and a diode (for example, a freewheel diode, etc.), said power conversion circuit being a single-switch power conversion circuit wherein the diode is a gallium oxide-based Schottky barrier diode, and the switching element is switch-controlled in a hard switching manner.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
Provided is a semiconductor device capable of improving durability against overcurrent while enabling a decrease in size and an increase in density. A semiconductor device of the present invention includes a plurality of PN junction diodes having a negative temperature characteristic and connected in series, a Schottky barrier diode having a positive temperature characteristic and connected in parallel with the plurality of PN junction diodes, and a die pad on which at least one of the plurality of PN junction diodes and the Schottky barrier diode are commonly mounted.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
Provided is a semiconductor device capable of improving durability against overcurrent while enabling a decrease in size and an increase in density. A semiconductor device of the present invention includes a plurality of PN junction diodes having a negative temperature characteristic and connected in series, a plurality of resistance elements connected in parallel to a respective PN junction diode and in series to each other, and a Schottky barrier diode having a positive temperature characteristic and connected in parallel with the plurality of PN junction diodes.
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L 27/04 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
33.
P-TYPE OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE CONTAINING P-TYPE OXIDE SEMICONDUCTOR
[Problem] To provide a semiconductor device containing a p-type oxide semiconductor that is industrially useful and exhibits superior properties as a semiconductor. [Solution] A p-type oxide semiconductor that contains iridium and a metal oxide containing at least one metal selected from among the boron group metals as main components, and further contains a dopant, wherein the hole carrier concentration is 1.0×1019/cm3 or less.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
233), an electrode layer which is superposed on the semiconductor layer, and a conductive substrate which is superposed on the electrode layer directly or with another layer being interposed therebetween, wherein the conductive substrate contains a group 6 metal of the periodic table; and a semiconductor device which is provided with this semiconductor element.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided are: an oxide semiconductor that is industrially useful and that has p-type electrical conductivity that is superior in terms of semiconductor characteristics; and a semiconductor device containing the oxide semiconductor. The oxide semiconductor contains mixed crystals of a metal oxide including two or more metals, the mixed crystals comprising, as the main constituents, a metal oxide containing at least a first metal selected from group 9 of the periodic table, and a second metal selected from group 13 of the periodic table. Among the metals in the mixed crystals, the second metal is present at an atomic ratio of 40% or more, and the mixed crystals have p-type electrical conductivity.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
233, etc.) as a main component, an electrode layer laminated on the semiconductor layer, and an electroconductive substrate laminated on the electrode layer directly or with another layer interposed therebetween, the electroconductive substrate containing at least a first metal selected from metals in group 11 of the Periodic Table and a second metal having a linear thermal expansion coefficient different from that of the first metal. The semiconductor device is provided with said semiconductor element.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a power conversion circuit in which radiation noise is reduced. The power conversion circuit is provided with at least a switching element (5) for opening and closing an input voltage via a reactor (4), and a commutating diode (7) which, by means of a voltage including at least an electromotive force generated from the reactor (4) when the switching element (5) is off, allows for conduction of a current that flows in the direction of the electromotive force. The commutating diode (7) includes a gallium oxide-based Schottky barrier diode.
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/12 - Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
The present invention provides a production method for a semiconductor device containing a semiconductor film having an inclined surface on the edge thereof. This production method for a semiconductor device comprises causing the epitaxial growth of a semiconductor film upon a substrate on which a mask having an inclined surface is disposed, and thereby forming a semiconductor film having an inclined surface on the edge thereof.
C30B 23/08 - Epitaxial-layer growth by condensing ionised vapours
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
There is a tendency for an electric field to concentrate at an end edge part of a Schottky electrode. Provided is a semiconductor device that has a structure which suppresses concentration of the electric field. In one embodiment of the present invention, a semiconductor device has a semiconductor layer, a non-conductive layer with which a side of the semiconductor layer is at least partially in contact, and a Schottky electrode which is disposed above the semiconductor layer and the non-conductive layer, wherein an edge part of the Schottky electrode is positioned above the nonconductive layer.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The purpose of the present invention is to provide a semiconductor device capable of suppressing the effects of generated heat on a control target. The semiconductor device comprises first and second electrode layers 1, 2 that are disposed facing each other and are provided with wiring on the facing surfaces; semiconductor elements 3, 4 that are positioned in a gap between the first and second electrode layers 1, 2, and are electrically connected to the first and second electrode layers 1, 2; and vias 5 that are positioned in the gap between the first and second electrode layers 1, 2, are electrically connected to the first and second electrode layers 1, 2, and detect the state of the semiconductor elements 3, 4 according to a loss in electrical connection resulting from breaking when a prescribed temperature has been attained.
Provided is a power conversion system that can easily detect overcurrent without alteration to the basis configuration of a power conversion circuit. The present invention is a power conversion system 1 for converting power and supplying the converted power to a load, said system characterized by comprising: a power conversion circuit 11 that is connected to the load 2 and transfers power; a coil 12 that detects a current passing through the power conversion circuit 11 and outputs a corresponding voltage; an integrating circuit 13 that, by integrating the voltage output from the coil 12, generates a voltage signal equivalent to the amount of change in the current; and a control means that generates a control signal for the power conversion circuit 11 on the basis of the voltage signal Vb output from the integrating circuit 13.
H02M 7/48 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
In one embodiment, a semiconductor device of the present invention comprises at least a semiconductor layer having a corundum structure, and a first electrode and a second electrode each arranged on a first surface side of the semiconductor layer. The semiconductor device is configured such that electrical current flows in a first direction from the first electrode toward the second electrode. The m-axis direction of the semiconductor layer is parallel to the first direction. Additionally, in another embodiment, the semiconductor device is characterized by comprising at least a semiconductor layer having a corundum structure, a first electrode arranged on a first surface side of the semiconductor layer, and a second electrode arranged on a second surface side that faces opposite the first surface side. The first surface is the m surface, the second electrode is longer than the first electrode in at least the first direction, and the first direction is the c-axis direction of the semiconductor layer. As one example of an embodiment of a crystal growth method of the present invention, a crystal growth method includes growing a corundum-structured crystal on a c-surface of a crystal substrate for corundum-structured crystal growth, the crystal substrate being provided with an uneven section such that the displacement accompanying the crystal growth extends in the m-axis direction more than in the a-axis direction. Additionally, one example of an embodiment of the present invention is characterized by being a method for growing a corundum-structured crystal by using a crystal substrate for crystal growth, wherein an uneven section is provided on the crystal growth surface side of the crystal substrate such that displacement that expands in the m-axis direction of the crystal is moved from the direction of crystal growth.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided are a semiconductor element and a semiconductor device which excel in semiconductor characteristics and heat-dissipating properties. The semiconductor element includes a layered structural body in which an oxide semiconductor film containing, as a main component, an oxide having a corundum structure is layered on a conductive substrate directly or via another layer. The conductive substrate has an area larger than that of the oxide semiconductor film. The semiconductor device is formed by joining, using a joining member, the semiconductor element with a lead frame, a circuit substrate, or a heat-dissipating substrate.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided are a semiconductor element and a semiconductor device which excel in semiconductor characteristics and heat-dissipating properties. The semiconductor element includes a layered structural body in which an oxide semiconductor film containing, as a main component, an oxide containing gallium is layered on a conductive substrate directly or via another layer. The conductive substrate has an area larger than that of the oxide semiconductor film. The semiconductor device is formed by joining, using a joining member, the semiconductor element with a lead frame, a circuit substrate, or a heat-dissipating substrate.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
45.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A semiconductor device which comprises: a semiconductor film that contains a Schottky junction region and an ohmic junction region; a Schottky electrode that is arranged on the Schottky junction region of the semiconductor film; and an ohmic electrode that is arranged on the ohmic junction region. This semiconductor device is characterized in that the dislocation density of the Schottky junction region of the semiconductor film is lower than the dislocation density of the ohmic junction region of the semiconductor film.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided is a semiconductor device having superior semiconductor properties, particularly, superior electrical properties. Obtained is the semiconductor device which has at least a semiconductor layer and a first electrode and second electrode each disposed on a first surface side of the semiconductor layer, and which is configured such that, in the semiconductor layer, electrical current flows in a first direction from the first electrode toward the second electrode. The semiconductor layer has a corundum structure and the c-axis direction of the semiconductor layer is the first direction.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a semiconductor device having excellent semiconductor characteristics, particularly electrical characteristics. Obtained is a semiconductor device that has at least: a semiconductor layer; and a first electrode and a second electrode each disposed on a first surface side of the semiconductor layer, the semiconductor device being configured such that in the semiconductor layer, current flows in a first direction from the first electrode toward the second electrode, wherein the semiconductor layer has a corundum structure, and the direction of a c axis of the semiconductor layer is the first direction.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
Provided are a conductive metal oxide film and a semiconductor element with superior electrical characteristics. The semiconductor element is produced using the conductive metal oxide film which comprises a metal oxide as a main component, the metal oxide including at least a first metal selected from group 4 of the periodic table and a second metal selected from group 13 of the periodic table. A semiconductor device such as a power card is manufactured from the produced semiconductor element, and a semiconductor system is constructed from the semiconductor element and the semiconductor device.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
49.
SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SYSTEM HAVING SEMICONDUCTOR DEVICE
Produced is a semiconductor device having at least a high-resistance oxide film, wherein the high-resistance oxide film, which has a resistance of 1.0×106Ω•cm or greater, is positioned along the direction in which current flows, or is positioned between a source electrode and a drain electrode, or is positioned between the source electrode and/or the drain electrode and a substrate, the semiconductor device thus produced being used as a power device.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/336 - Field-effect transistors with an insulated gate
A semiconductor device which comprises at least a crystalline oxide semiconductor layer, and which is characterized in that the crystalline oxide semiconductor layer has a band gap of 3 eV or more, while having a field effect mobility of 30 cm2/V∙s or more.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
This semiconductor device at least has a crystalline oxide semiconductor layer, and is characterized in that the crystalline oxide semiconductor layer has a bandgap not less than 4.5 eV and an electron field-effect mobility not less than 10 cm2/V·s.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
A crystalline oxide is etched under a pressure of 1-10 Pa to form a trench having at least one arc portion having a radius of curvature in the range of 100-500 nm between the bottom surface and the side surface.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A semiconductor element that includes at least a layered structure in which a first metal layer, a second metal layer, and a third metal layer are layered on a semiconductor layer comprising an oxide semiconductor film, wherein: the first metal layer, the second metal layer, and the third metal layer are each configured from one or more mutually differing metals; the second metal layer is positioned between the first metal layer and the third metal layer; the second metal layer includes Pt and/or Pd; and the first metal layer is in ohmic contact with the semiconductor layer.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
54.
CRYSTALLINE LAMINATE STRUCTURE AND SEMICONDUCTOR DEVICE
233 (in the formula, M is a trivalent metal atom and O is an oxygen atom), and the second crystal is a single crystal of a crystalline oxide. This crystalline laminate structure is adopted in a semiconductor device.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides a semiconductor element which is provided with a porous layer that is not susceptible to a strain and is capable of achieving good semiconductor characteristics, while having excellent planarity. A semiconductor element which comprises a semiconductor film and a porous layer that is arranged on a first surface of the semiconductor film or on a second surface that is on the reverse side of the first surface, wherein the porosity of the porous layer is 10% or less.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided is a laminated structure that has a crystalline film having a large area, which is useful for a semiconductor device, etc., and having a good film thickness distribution in which the film thickness is 30 μm or less, and that has excellent heat dissipation. In a laminated structure in which a crystal film containing a crystalline metal oxide as a main component is laminated on a support directly or with another layer therebetween, the support has a thermal conductivity of 100 W/m·K or more at room temperature, and the crystal film has a corundum structure. Furthermore, the film thickness of the crystal film is 1 μm to 30 μm, the area of the crystal film is 15 cm2 or more, and the distribution of the film thickness in the area is in the range of ± 10% or less.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
In the present invention, a crystal film that includes a crystalline metal oxide as a main component thereof and that has a corundum structure, the crystal film having a dislocation density of 1 × 107cm-2or less and a surface area of 10 mm2 or greater, is obtained by forming a first transverse crystal growth layer on a substrate by first transverse crystal growth, positioning a mask on the first transverse crystal growth layer, and then forming a second transverse crystal growth layer by second transverse crystal growth.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
A first raw material solution containing at least aluminum is atomized to generate first atomized droplets, a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets; subsequently, the first atomized droplets are transported into a film forming chamber using a first carrier gas, and the second atomized droplets are transported into the film forming chamber using a second carrier gas; thereafter, the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and, by thermally reacting the mixed atomized droplets near the surface of a substrate, an oxide semiconductor film is formed on the substrate. The main component of the oxide semiconductor film is a metal oxide containing at least aluminum and gallium, and the oxide semiconductor film has a mobility of at least 5 cm2/Vs.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
According to the present invention, first atomized droplets are produced by atomizing a first starting material solution that contains at least aluminum; second atomized droplets are produced by atomizing a second starting material solution that contains at least gallium and a dopant; then, the first atomized droplets are carried into a film formation chamber with use of a first carrier gas and the second atomized droplets are carried into the film formation chamber with use of a second carrier gas; and subsequently, the first atomized droplets and the second atomized droplets are mixed with each other within the film formation chamber and a thermal reaction of the mixed atomized droplets is caused in the vicinity of the surface of a substrate, thereby forming an oxide film having a corundum structure on the substrate, said oxide film being mainly composed of a metal oxide containing at least aluminum and gallium, while having the m-plane as a main surface.
H01L 33/26 - Materials of the light emitting region
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
The present invention provides: a multilayer structure which is ameliorated in terms of crystal defects caused by stress concentration within a semiconductor layer due to an insulating film; and a semiconductor device which uses this multilayer structure. A multilayer structure which is obtained by superposing an insulating layer on a part of a semiconductor film, wherein: the semiconductor film contains a crystalline oxide semiconductor that has a corundum structure and contains one or more metals selected from among group 9 and group 13 elements of the periodic table; and the insulating film has a taper angle of 20° or less.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided is a semiconductor device that is particularly useful as a power device and achieves improvement in crystal defects that are caused by stress concentration in a semiconductor layer that is caused by an insulator film. A semiconductor device that comprises at least a semiconductor layer, a Schottky electrode, and an insulator layer that is provided between the Schottky electrode and a portion of the semiconductor layer. The semiconductor layer includes a crystalline oxide semiconductor, and the insulator layer has a taper angle of no more than 10°.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
Provided is a method with which it is possible to form a porous electrode having excellent coatability and electroconductivity in an industrially advantageous manner. Using a base body, the surface of which is provided with at least one machined hole for an electrode, a material melt containing a metal is atomised, the droplets are suspended, and the obtained atomised droplets are transported into the machined hole for an electrode by means of a carrier gas. Subsequently, a porous electrode is formed on an inner wall of the machined hole for an electrode by causing the atomised droplets to thermally react. Said porous electrode is used for a semiconductor device, an electronic component/component of an electrical apparatus, an optical/electrophotography-related device, an industrial part, etc.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Provided is a low-loss semiconductor device that is particularly useful for power devices, in which a leakage current is suppressed. Provided is a semiconductor device comprising at least a semiconductor layer, which contains an oxide semiconductor having a corundum structure as a main component, and a Schottky electrode, which includes a first electrode layer and a second electrode layer having a higher conductivity than the first electrode layer, wherein the outer end of the second electrode layer is electrically connected to the semiconductor layer via the first electrode layer, and the outer end of the first electrode layer is located outside the outer end of the electrically connected region of the second electrode layer that is electrically connected.
Provided is a low loss semiconductor device which is particularly useful for power devices and with which leakage current is suppressed. The semiconductor device comprises: a semiconductor layer; a dielectric film that is formed on the semiconductor layer, has an opening, and is formed spanning at least 0.25μm from the opening; and an electrode layer that is formed from inside the opening and spans to a part or the entirety of the top of the dielectric film. The thickness of the dielectric film is less than 50nm from the opening to a distance of at least 0.25μm, and the relative permittivity of the dielectric film is at most 5.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
65.
CRYSTALS, CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR FILM CONTAINING CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE CONTAINING CRYSTALS AND/OR SEMICONDUCTOR FILM, AND SYSTEM INCLUDING SEMICONDUCTOR DEVICE
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Provided is a semiconductor device having excellent semiconductor characteristics and useful for, particularly, a power device. This semiconductor device is provided with one or more p-type semiconductors (for example, a p-type doped crystalline oxide semiconductor or the like) between an n-type semiconductor layer (for example, an n-type semiconductor layer or the like including an oxide semiconductor as a main component) and an electrode, the semiconductor device being characterized in that the p-type semiconductor is inserted in the n-type semiconductor layer and protrudes from the n-type semiconductor layer into the electrode.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
Provided is a semiconductor apparatus which is particularly useful for a power device and has excellent semiconductor properties. This semiconductor apparatus is a semiconductor apparatus (for example, a junction barrier Schottky diode, etc.) provided with a plurality of p-type semiconductors (for example, magnesium-doped gallium oxide, etc.) between an n-type semiconductor layer and an electrode, the semiconductor apparatus being characterized in that the n-type semiconductor layer includes gallium (for example, gallium oxide, etc.), and at least three p-type semiconductors are provided and inserted in the n-type semiconductor layer.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
Provided is a semiconductor apparatus which is particularly useful for a power device and has excellent semiconductor properties. This semiconductor apparatus is a semiconductor apparatus (for example, a junction barrier Schottky diode, etc.) provided with a plurality of p-type semiconductors (for example, magnesium-doped gallium oxide, etc.) between an n-type semiconductor layer and an electrode, the semiconductor apparatus being characterized in that the n-type semiconductor layer includes a crystalline oxide semiconductor (for example, α-type gallium oxide, etc.), which has a corundum structure, as a main component, and at least three p-type semiconductors are provided and inserted in the n-type semiconductor layer.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
This semiconductor device is characterized by having at least an inversion channel region, wherein the inversion channel region has an oxide semiconductor film including a crystal that contains at least gallium oxide.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a laminate structure characterized in that an oxide film containing at least one element among the elements of Group 15 of the Periodic Table is laminated on an oxide semiconductor film containing a gallium oxide or a mixed crystal thereof as a main component.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
This semiconductor device is characterized by having at least an inversion channel region, wherein the inversion channel region has an oxide semiconductor film including a crystal that has a corundum structure.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a normally-off semiconductor device comprising an oxide semiconductor film which has a corundum structure or contains a gallium oxide or a mixed crystal thereof as a main component, the semiconductor device having a threshold voltage of at least 3 V.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
The present invention provides an epitaxial film that has a corundum structure, in which defects such as dislocation due to facet growth are reduced, which is useful for semiconductor devices and the like, and which has excellent crystal quality. A crystalline oxide film includes a traverse direction growth region having a corundum structure, wherein: the traverse direction growth region does not substantially include a facet growth region, has a crystal growth direction that is the c-axis direction or approximately the c-axis direction, and includes a dislocation line extending in the c-axis direction or in the approximately c-axis direction; and crystalline oxides, in which crystal growth extends in the c-axis direction or in the approximately c-axis direction, are bonded to each other.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
74.
FILM-FORMING METHOD AND CRYSTALLINE LAYERED STRUCTURE
Provided is a film-forming method enabling industrially advantageous film-forming, even with a corundum structure, of an epitaxial film where defects such as dislocation due to faceted growth have been reduced. In forming an epitaxial film, either directly or with another layer therebetween, on a crystal growth surface of a crystal substrate having a corundum structure, the invention comprises atomizing a raw material solution containing a metal, with use of a crystal substrate where a relief part containing at least a concavity or a convexity has been formed, to cause droplets to float over the crystal growth surface, carrying the resulting atomized droplets with a carrier gas to the vicinity of the crystal substrate, and then thermally reacting the atomized droplets under supply rate-limiting conditions, thereby forming the epitaxial film.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
75.
THERMISTOR FILM, THERMISTOR ELEMENT HAVING THERMISTOR FILM, AND METHOD FOR FORMING THERMISTOR FILM
Provided, as a first aspect of the present invention, is a thermistor film having excellent thermistor characteristics. A thermistor film for use in a thermistor element and characterized in that the film width is at least 5mm, the film thickness is at least 50nm, and the film thickness distribution at a film width of 5mm is less than ±50nm.
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01C 17/14 - Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques by chemical deposition
76.
P-TYPE OXIDE SEMICONDUCTOR FILM AND METHOD FOR FORMING SAME
Provided are a p-type oxide semiconductor that has industrial utility and superior semiconductor characteristics, and a method for forming the same. This p-type oxide semiconductor film has a corundum structure, a film thickness of at least 50nm and a surface roughness of at most 10nm. The film is formed by using a gas of a metal oxide (e.g. iridium oxide) as a starting material and growing crystals on a base having a corundum structure (e.g. a sapphire substrate) until the film thickness is at least 50nm.
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
Provided is a semiconductor device which uses a p-type oxide semiconductor film which can be used in a p-well layer without sacrificing semiconductor properties, even when using a low-loss-at-high-voltage n-type semiconductor (for example, gallium oxide or the like) which exhibits a much higher dielectric breakdown field strength than does SiC, for example. A semiconductor device which is equipped with at least an n-type semiconductor layer and a p+-type semiconductor layer, and is characterized in that as a principal component, the n-type semiconductor layer contains a crystalline oxide semiconductor (for example, gallium oxide or the like) containing a metal from group 13 of the periodic table, and as a principal component, the p+-type semiconductor layer contains a crystalline oxide semiconductor (for example, iridium oxide or the like) containing a metal from group 9 of the periodic table.
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
233) having a corundum structure; and an electric field shield layer and a gate electrode each laminated on the n-type semiconductor layer, either directly or with another layer therebetween, wherein the semiconductor device is characterized in that the electric field shield layer includes a p-type oxide semiconductor and is embedded deeper in the n-type semiconductor layer than the gate electrode.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
Provided is a formation method that makes it possible to industrially advantageously form a p-type oxide semiconductor film that has excellent semiconductor characteristics. According to the present invention, a metal oxide gas that has been obtained by heating and sublimating a solid body of a metal oxide (such as iridium oxide) is used as a raw material to grow crystals on a base (such as a sapphire substrate) and form a p-type oxide semiconductor film that has a corundum structure, a film thickness of at leaset 50 nm, and a surface roughness of no more than 10 nm.
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided is a semiconductor device capable of achieving excellent semiconductor characteristics without impairing semiconductor characteristics even in cases of using, for example, a high-voltage low-loss n-type semiconductor (such as gallium oxide) having a dielectric breakdown field intensity that is considerably higher than that of SiC. Provided is a semiconductor device comprising at least: a gate electrode; and a channel layer in which a channel is formed on a side wall of the gate electrode directly or with another layer therebetween. A portion or the entirety of the channel layer includes a p-type oxide semiconductor (such as iridium oxide).
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
Provided is a semiconductor device which has excellent semiconductor characteristics that are useful especially for power devices. A semiconductor device which is provided with at least a semiconductor region and a barrier electrode that is arranged on the semiconductor region, and wherein: a plurality of barrier height adjustment regions are provided between the semiconductor region and the barrier electrode so that the barrier height between each barrier height adjustment region and the barrier electrode is higher than the barrier height at the interface between the semiconductor region and the barrier electrode; and the plurality of barrier height adjustment regions are embedded in the surface of the semiconductor region.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided are: a thermistor film having excellent thermistor characteristics as well as high mechanical strength; and a method for forming the thermistor film. Under predetermined film-forming conditions, a carrier gas is supplied to a mist or droplets obtained by atomizing or dropletizing a raw solution for a thermistor film, the mist or droplets are transported to a substrate, and then the mist or droplets are thermally reacted on the substrate to form a film. Thus, each of: an epitaxial film having excellent thermistor characteristics; a thermistor thin film having a film thickness of 1 µm or less; a thermistor film which has a film width of 5 mm or less and a film thickness of 50 nm to 5 µm, and in which the film thickness distribution at a film width of 5 mm is within a range of less than ±50 nm; and a thermistor film having a film thickness of 50 nm to 5 µm and a film surface roughness (Ra) of 0.1 µm or less are obtained.
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01C 17/20 - Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by pyrolytic processes
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
83.
CONDUCTIVE MEMBER, AND METHOD FOR MANUFACTURING SAME
Provided is a conductive member having excellent corrosion resistance even in high-voltage environments, and a method for manufacturing the conductive member. By using a stock solution containing a tetravalent metal to form a metal oxide film on a separator substrate via mist CVD, a conductive member, wherein an active potential region and a passive potential region are formed in the anode polarization curve measured in an aqueous sulfuric acid solution having a sulfuric acid concentration of 5.0×10-4 mol/dm3 at a pH of 3 and a temperature of 25℃ such that the anode current density in the passive potential region is no more than 1×10-7 A/cm2 and the passive potential region extends to a potential of 1V, is obtained.
H01M 8/026 - Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant characterised by grooves, e.g. their pitch or depth
Provided are a processing device (system) and a processing method with which good quality roll-to-roll processing can be performed simply and easily on both sides of a substrate under atmospheric pressure. A processing device (system) for processing a substrate using a mist or liquid droplets including a processing agent is provided with an accumulation unit for accumulating the mist or liquid droplets, and an impregnation unit for impregnating the substrate with the accumulated mist or liquid droplets. Using the processing device, the mist or liquid droplets are accumulated, and the substrate is processed by impregnating the substrate with the accumulated mist or liquid droplets.
Provided is a crystalline oxide semiconductor film which has excellent electrical characteristics. According to the present invention, with use of a mist CVD apparatus, a starting material solution containing a dopant is formed into a mist or droplets; the thus-obtained mist or droplets are carried to the vicinity of an a-plane or m-plane corundum structure crystal substrate within a film formation chamber by means of a carrier gas; and subsequently, the mist or droplets are subjected to a thermal reaction in the film formation chamber, thereby obtaining a crystalline oxide semiconductor film on the crystal substrate, said crystalline oxide semiconductor film having a corundum structure and a main surface on the a-plane or m-plane, with the dopant being an n-type dopant.
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
Provided are: a semiconductor film uniformly doped with silicon and having excellent electrical properties; and a production method therefor. The present invention uses a dopant material that includes a complex compound, said complex compound containing at least silicon, a halogen, and a hydrocarbon group or heterocyclic group, either of which may have a substituent group, and dopes a semiconductor film with the same so as to obtain a semiconductor film doped with Si, wherein doping occurs up to a depth of at least 0.3 μm or more from the film surface, the carrier density is 1×1020/cm3 or less, the mobility is 1 cm2/Vs or more, and the film thickness is 100 μm or less.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided are a novel and useful p-type oxide semiconductor that has a broad bandgap and excellent electrical conductivity, and a method for manufacturing the same. A raw material solution containing iridium and other metals as desired is atomized to generate a mist, and after using a carrier gas to convey the mist to near the surface of a base, by thermally reacting the mist near the base surface, a crystal of a metal oxide containing iridium or a mixed crystal is formed on the base, to manufacture the p-type oxide semiconductor.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided are: a novel and useful oxide semiconductor film which has good p-type semiconductor characteristics; and a method for producing this oxide semiconductor film. According to the present invention, a mist is formed by atomizing a starting material solution that contains a group 9 metal (rhodium, iridium, cobalt or the like) and/or a group 13 metal (indium, aluminum, gallium or the like) of the periodic table and a p-type dopant (magnesium or the like), and subsequently, after carrying the mist to the vicinity of the surface of a base with use of a carrier gas, an oxide semiconductor film is formed on the base by subjecting the mist to a thermal reaction in an oxygen atmosphere in the vicinity of the base surface.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C01G 55/00 - Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Provided are a novel and useful p-type oxide semiconductor that has excellent electrical conductivity, and a method for manufacturing the same. Through an atomization step for atomizing a raw material solution that contains d block metals of the periodic table and group 13 metals of the periodic table to generate mist, a carrying step for using a carrier gas to carry the mist to near the surface of a base, and a process for thermally reacting the mist near the base surface in an oxygen atmosphere, a p-type oxide semiconductor having a metal oxide that contains d block metals of the periodic table and group 13 metals of the periodic table as a main component is formed on the base.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/368 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H02M 3/28 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
Provided is a novel film forming method which is capable of industrially advantageously forming a film, while ensuring or improving the film formation quality. According to the present invention, a starting material solution, which contains an aprotic solvent (a lactone, a lactam or the like) that hardly donates protons, is atomized or formed into droplets (atomization/droplet formation step); the thus-obtained mist or droplets are conveyed to a base, which is disposed within a film formation chamber, by means of a carrier gas (conveyance step); and a film is subsequently formed on the base by having the mist or droplets react preferably at a temperature of 250°C or less (film formation step).
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
H01L 51/48 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
91.
LAMINATED STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE, AND CRYSTALLINE FILM
Provided are a laminated structure having excellent crystallinity, and a semiconductor device having the aforementioned laminated structure and having good mobility. The laminated structure is formed by laminating, on a crystalline substrate having a corundum structure, a crystalline film that incudes, as the main component, a crystalline oxide having a corundum structure, with the crystalline film being laminated directly on the substrate, or laminated on the substrate with another layer intervening therebetween. The laminated structure is characterized in that the crystalline substrate has an off angle of 0.2°-12.0°, and the crystalline oxide includes one or more kinds of metals selected from indium, aluminum, and gallium.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/26 - Materials of the light emitting region
92.
CRYSTALLINE SEMICONDUCTOR FILM, PLATE-LIKE BODY AND SEMICONDUCTOR DEVICE
Provided are: a semiconductor film which has excellent semiconductor characteristics, in particular, excellent withstand voltage and heat dissipation properties, while being suppressed in leakage current; a plate-like body; and a semiconductor device. A crystalline semiconductor film which contains, as a main component, an oxide semiconductor having a corundum structure, in particular, a crystalline semiconductor film which contains, as a main component, an oxide of one or more elements selected from among gallium, indium and aluminum, said oxide being a semiconductor, and which is characterized by having a film thickness of 1 μm or more; a plate-like body; and a semiconductor device which is provided with a semiconductor structure comprising the crystalline semiconductor film or the plate-like body.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 27/098 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
Provided is a semiconductor device, or a crystal, with which phase transition occurring in corundum structure oxide crystal when at high temperature can be minimized. According to the present invention, there is provided a semiconductor device or crystal structure, having a corundum structure oxide crystal containing either indium atoms, gallium atoms, or both, the oxide crystal containing, at a minimum, aluminum atoms in the interstices between the lattice points of the crystal lattice.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
patents
