Abstract

A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon

Abstract

A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.

IPC Classes  ?

• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the second stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.

IPC Classes  ?

• C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

Synthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.

IPC Classes  ?

• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A method for producing a single crystal silicon ingot from a silicon melt includes providing a crucible within an inner chamber of an ingot puller, the crucible including an inner surface and a synthetic liner on the inner surface. The method further includes adding an initial charge of polysilicon to the crucible, melting the initial charge of polysilicon to cause the silicon melt to form in the crucible, and dissolving a melt modifier into the silicon melt to devitrify the synthetic liner and form a crystallized layer on the crucible. The crystallized layer has a thickness less than 700 microns. The method further includes pulling a single crystal silicon ingot from the silicon melt.

IPC Classes  ?

• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces. The susceptor also includes a recess that extends into the body from the front surface to a recess floor and a ledge that circumscribes the recess floor in the recess. The ledge includes a first surface oriented at a first angle relative to a horizontal plane parallel to the central plane, a second surface that extends radially inward from the first surface, the second surface optionally oriented at a second acute angle relative to the horizontal plane, and a third surface that extends between the second surface and the recess floor, the third surface oriented at a third acute angle relative to the horizontal plane. Each of the first, second, and third surfaces extends circumferentially along the ledge.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

A measurement system includes a target object at least partially visible through an opening in a crystal puller. The crystal puller has a silicon melt in a crucible and a reflector defining a central passage through which a crystal is pulled. A detector array captures light through the opening. The detector array is directed to a surface of the silicon melt in the crystal puller and to the target object, and a laser selectively transmits a coherent light beam through the opening to the target object to produce a reflection of the target object on the surface of the silicon melt. An optical modulator pulses the coherent light beams of the laser into discrete coherent light beams having a period, and a lock-in amplifier is connected to the detector array to filter discrete coherent light having the period from captured light.

IPC Classes  ?

• C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using photo or X-ray detectors

Abstract

Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

IPC Classes  ?

• B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhere; Machines, devices, tools therefor
• B28D 1/10 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhere; Machines, devices, tools therefor by sawing with provision for measuring
• B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor by tools other than of rotary type, e.g. reciprocating tools
• B28D 7/00 - Accessories specially adapted for use with machines or devices of the other groups of this subclass

Abstract

A graphite susceptor for supporting a quartz crucible during a crystal growth process includes a body having an interior surface and a coating deposited onto the interior surface. The interior surface of the body defines a cavity, and the cavity has a size and shape complementary to an outer size and shape of the crucible. The coating includes boron nitride and a sintering additive. The sintering additive is configured to promote densification of the boron nitride.

IPC Classes  ?

• C30B 15/10 - Crucibles or containers for supporting the melt
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C30B 29/06 - Silicon

Abstract

Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain. The data is analyzed though a Fourier transform to obtain data in the frequency domain. The frequency domain data includes an amplitude which corresponds to mechanical wear of the gear. The time domain data is compared against a threshold amplitude to determine if the gears have mechanical wear such that preventative maintenance can be performed on the motor.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating

Abstract

Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon

Abstract

A computer device is programmed to store a model for converting shape maps to simulate a portion of an assembly line, receive scan data of a first inspection of a product being assembled, generate a shape map from the scan data of the first inspection, execute the model using the shape map as an input to generate a final shape map of the product, compare the final shape map to one or more thresholds, determine if the final shape map exceeds at least one of the one or more thresholds, and if the determination is that the final shape map exceeds at least one of the one or more thresholds, cause the first device to be adjusted.

IPC Classes  ?

• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control (DNC), flexible manufacturing systems (FMS), integrated manufacturing systems (IMS), computer integrated manufacturing (CIM)

Abstract

Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

Methods for producing a product ingot from a silicon melt held within a crucible are disclosed. The methods involve evaluating one or more ingot puller apparatus to determine if the apparatus is capable of producing low oxygen content silicon product ingots. A sample rod is pulled from the silicon melt and the oxygen content of the sample rod is measured.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 29/06 - Silicon

Abstract

Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array is made of quartz particles that are interconnected by linking members.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
• C30B 15/24 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
• C30B 29/06 - Silicon
• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Abstract

Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The model may output a pre-anneal wafer resistivity target range. The single crystal silicon ingot production process may be modeled to determine a counter-doping schedule to achieve the pre-anneal wafer resistivity target range across a longer length of the main body of the ingot.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon
• C30B 33/02 - Heat treatment

Abstract

An epitaxial reactor system includes a reactor, a cooling circuit, and a controller. The reactor includes a reaction chamber having an upper wall and a lower wall, an upper module positioned above the upper wall, and a lower module positioned below the lower wall. The cooling circuit includes a blower to circulate fluid within the upper module and the lower module and a damper selectably positioned to control an amount of fluid flow provided to each of the upper module and the lower module. The damper is coupled to a damper actuator that adjusts a position of the damper. The system further includes a controller configured to: receive epitaxial process information associated with the reactor, generate a blower output and a damper position output based on the epitaxial process information, transmit the blower output to the blower, and transmit the damper position output to the damper actuator.

IPC Classes  ?

• C30B 25/10 - Heating of the reaction chamber or the substrate
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for forming such tubes, and methods for forming a single crystal silicon ingot with use of such tubes. The composite polycrystalline silicon feed tubes include quartz and at least one dopant. The composite polycrystalline silicon feed tube may be made by a slip cast method.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon
• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C04B 35/14 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on silica

Abstract

Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a top portion and a recess along a bottom portion. The recess has a recessed surface. Holes extend from the top portion through the recessed surface. The cap is positioned within the recess and the cap has an annular wall and a floor extending across the annular wall. The annular wall has apertures corresponding to the holes. The floor is spaced from the recessed surface to form a chamber therebetween. The polishing head assembly also includes a band that circumscribes a portion of the annular wall. The holes and the corresponding apertures receive fasteners to removably secure the annular wall to the recessed surface.

IPC Classes  ?

• B24B 37/32 - Retaining rings

Abstract

Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon
• G01N 21/21 - Polarisation-affecting properties

Abstract

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz ) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/12 - Double crucible methods
• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon

Abstract

Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.

IPC Classes  ?

• H01L 21/3065 - Plasma etching; Reactive-ion etching
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• C23C 16/02 - Pretreatment of the material to be coated
• C23C 16/24 - Deposition of silicon only
• C23C 16/56 - After-treatment

Abstract

Methods for preparing epitaxial wafers are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G. An epitaxial layer is deposited on a substrate sliced from the silicon ingot.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon
• C30B 33/02 - Heat treatment
• H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections

Abstract

Methods and apparatus for simultaneous double-side grinding semiconductor structures are disclosed. The double-side grinding apparatus may include first and second grinding wheels each having abrasive members that are shaped as a convex polygon (e.g., convex pentagon).

IPC Classes  ?

• B24B 37/08 - Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24D 3/10 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic for porous or cellular structure, e.g. for use with diamonds as abrasives
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

A system for monitoring alignment of a second component relative to a first component includes a camera, and a controller including a processor and a non-transitory memory. The controller is configured to receive a first captured image from the camera when the second component is in a predetermined position relative to the first component, receive a selection of a region of interest (ROI) in the first captured image, identify a visible feature of the second component within the ROI of the first captured image, receive captured images from the camera during a subsequent operation, identify a second captured image when the second component is expected to be in the predetermined position relative to the first component, and determine if the second component is in the predetermined position relative to the first component based on the second captured image and the identified visible feature of the first captured image.

IPC Classes  ?

• B25J 9/16 - Programme controls
• B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
• B25J 19/02 - Sensing devices
• B25J 11/00 - Manipulators not otherwise provided for

Abstract

Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

Ingot puller apparatus having a compound exhaust tube and methods for selecting the length of the lower and upper portions of the compound exhaust tube are disclosed. In some embodiments, the upper portion of the compound exhaust tube is made of graphite and the lower portion is made of stainless steel.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 29/06 - Silicon

Abstract

A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hotzone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hotzone. The IR camera is positioned to view one or more additional regions of interest within the hotzone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hotzone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.

IPC Classes  ?

• C30B 15/14 - Heating of the melt or the crystallised materials
• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz ) are disclosed. A batch of buffer members (e. g., quartz cullets ) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon

Abstract

Additive feed systems for feeding at least two different additives to silicon disposed within a crucible of an ingot puller apparatus are disclosed. The additive feed system may include first and second feed trays which are caused to vibrate to move first or second additive from a canister in which the additive is stored to another vessel in which the amount of first or second additive added to the vessel is sensed. The additive is discharged from the vessel into an additive feed tube through which the additive enters the crucible.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon

Abstract

Systems and methods for doping a single crystal silicon ingot pulled from a silicon melt held within an ingot puller apparatus are disclosed. The ingot puller apparatus includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing. The method includes heating a vaporization cup and maintaining a pressure of an interior of the housing at a first pressure. The method further includes injecting liquid dopant into the vaporization cup. A pressure of the liquid dopant is maintained at a second pressure greater than the first pressure prior to injection. The method also includes vaporizing the liquid dopant by heating the liquid dopant with the vaporization cup and reducing the pressure of the liquid dopant from the second pressure to the first pressure by injecting the liquid dopant into the housing, and channeling the vaporized dopant into the housing.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon

Abstract

Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink 100 and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink 100 is measured; e.g. a slide angle is measured by a testing apparatus 300. The parameter is compared to a baseline range.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
• C23C 14/48 - Ion implantation
• G01N 19/02 - Measuring coefficient of friction between materials
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process. The semiconductor wafer defines a center region. The reaction apparatus includes an upper dome, a lower dome, a shaft, and a cap. The lower dome is attached to the upper dome, and the upper dome and the lower dome define a reaction chamber. The cap is positioned on the shaft within the reaction chamber for reducing heat absorbed by the center region of the semiconductor wafer. The cap is attached to a first end of the shaft. The cap includes a tube and a disc. The tube defines a tube diameter larger than a shaft diameter of the shaft. The tube circumscribes the first end of the shaft. The disc is attached to the tube and is positioned to block radiant heat from heating the center region of the semiconductor wafer.

IPC Classes  ?

• C30B 25/08 - Reaction chambers; Selection of materials therefor
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
• C30B 25/10 - Heating of the reaction chamber or the substrate
• C30B 25/12 - Substrate holders or susceptors

Abstract

A reaction apparatus includes an upper dome, a lower dome, an upper liner, a lower liner, and a preheat ring. The upper dome and the lower dome define a reaction chamber. The preheat ring is positioned within the reaction chamber for heating the process gas prior to contacting the semiconductor wafer. The preheating ring is attached to an inner circumference of the lower liner. The preheat ring includes an annular disk and an edge bar. The annular disk has an inner edge, an outer edge, a first side, and a second side opposite the first side. The inner edge and the outer edge define a radial distance therebetween. The edge bar positioned on the first side and extending from the outer edge toward the inner edge an edge bar radial thickness. The radial distance is greater than the edge bar radial thickness.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C30B 25/14 - Feed and outlet means for the gases; Modifying the flow of the reactive gases
• C30B 25/16 - Controlling or regulating

Abstract

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

IPC Classes  ?

• C30B 15/14 - Heating of the melt or the crystallised materials

Abstract

A measurement system includes a reflector defining a central passage and an opening, a measurement assembly, and a controller. The measurement assembly includes a run pin having a head that is visible through the opening, a camera to capture images through the opening in the reflector, and a laser to transmit coherent light through the opening to the head of the run pin to produce a reflection of the run pin on the surface of the silicon melt. The controller is programmed to control the laser to direct coherent light from the laser to the run pin, control the camera capture images through the opening while the coherent light is directed at the run pin, and determine a distance between the surface of the silicon melt and a bottom surface of the reflector based on a location of the reflection of the run pin in the captured images.

IPC Classes  ?

• C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
• C30B 29/06 - Silicon
• C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using photo or X-ray detectors

Abstract

Methods for preparing an ingot in an ingot puller apparatus are disclosed. Thermal simulations are performed with the length of the ingot puller apparatus side heater being varied in the thermal simulations. A side heater is selected based on the thermal simulations. An ingot puller apparatus having the selected side heater length is provided. A seed crystal is lowered into a melt within a crucible of the ingot puller apparatus and an ingot is withdrawn from the melt.

IPC Classes  ?

• C30B 15/14 - Heating of the melt or the crystallised materials
• C30B 29/06 - Silicon

Abstract

Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot in such ingot puller apparatus are disclosed. In some embodiments, the side heater is relatively short. The side heater may be fully above a floor of the crucible when the crucible is in its lowest position in the ingot puller.

IPC Classes  ?

• C30B 15/14 - Heating of the melt or the crystallised materials
• C30B 29/06 - Silicon

Abstract

A computer device is programmed to receive a plurality of real-time datasets from one or more sensors associated with a tool to be analyzed, calibrate the plurality of real-time datasets, generate a time slide window for each real-time dataset of the plurality of real-time datasets, generate a random probability distribution curve, compare the random probability distribution curve to each time slide window to determine if the time slide window includes anomaly data, and generate prediction results based on the comparison.

IPC Classes  ?

• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control (DNC), flexible manufacturing systems (FMS), integrated manufacturing systems (IMS), computer integrated manufacturing (CIM)

Abstract

Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 29/06 - Silicon

Abstract

Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method

Abstract

A semiconductor wafer imaging system for imaging a semiconductor wafer includes shroud panels defining a black box, a camera positioned in the black box for imaging the semiconductor wafer, and an illumination panel for directing diffuse light to the semiconductor wafer. A portion of the diffuse light is reflected off the semiconductor wafer and the camera images the semiconductor wafer by detecting the reflected diffuse light.

IPC Classes  ?

• G01N 21/88 - Investigating the presence of flaws, defects or contamination
• G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined

Abstract

Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

IPC Classes  ?

• C30B 15/12 - Double crucible methods
• C30B 15/14 - Heating of the melt or the crystallised materials
• C30B 29/06 - Silicon

Abstract

A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
• C30B 25/02 - Epitaxial-layer growth
• C30B 25/08 - Reaction chambers; Selection of materials therefor
• C30B 25/16 - Controlling or regulating

Abstract

Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

A semiconductor wafer processing system for processing a set of semiconductor wafers includes a controller, a transfer robot controlled by the controller, a wet bath for containing a cleaning solution, and a cassette positioned in the wet bath for holding the set of wafers. The transfer robot transfers the wafer from a transfer location to the cassette and the controller controls the transfer robot during the transfer.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

A method for producing a silicon ingot by the Czochralski method includes rotating a crucible containing a silicon melt, contacting the silicon melt with a seed crystal, withdrawing the seed crystal from the silicon melt along an axis of symmetry while rotating the crucible about the axis of symmetry to form a silicon ingot, and inducing currents in the silicon ingot to oppose movement of the silicon ingot away from the axis of symmetry.

IPC Classes  ?

• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

A wafer boat for supporting a plurality of semiconductor wafers in a furnace is disclosed. The wafer boat includes a set of fingers each having a contact protuberance which contacts and supports a semiconducting wafer. The contact protuberances may be arranged in a rotationally symmetric pattern about the wafer boat.

IPC Classes  ?

• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

A wafer boat for supporting a plurality of semiconductor wafers in a furnace. The wafer boat includes a set of fingers each having a contact protuberance which contacts and supports a semiconductor wafer.

IPC Classes  ?

• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

A method of preheating a polishing pad of a semiconductor wafer polishing system includes heating a fluid to a first predetermined temperature. The method also includes applying the fluid to the polishing pad. The method further includes rotating the polishing pad such that the fluid covers the polishing pad. The fluid increases a polishing pad temperature to a second predetermined temperature.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/06 - Non-vertical pulling
• C30B 15/12 - Double crucible methods
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A computer device is provided. The computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for simulating a portion of an assembly line and receive scan data of a first inspection of a product being assembled, execute the model using the scan data as inputs to generate a final profile of the product, compare the final profile to one or more thresholds, determine if the final profile exceeds at least one of the one or more thresholds, and adjust the first device if the determination is that the final profile exceeds at least one of the one or more thresholds.

IPC Classes  ?

• G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control (DNC), flexible manufacturing systems (FMS), integrated manufacturing systems (IMS), computer integrated manufacturing (CIM)
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/762 - Dielectric regions

Abstract

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

IPC Classes  ?

• C30B 15/10 - Crucibles or containers for supporting the melt
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

Cleave systems for cleaving a semiconductor structure are disclosed. The cleave systems may include a cleave arm that is moveable from a starting position to a raised position in which a cleave stress is applied to the semiconductor structure. Spring members store energy as the cleave arm is raised with the stored spring energy causing the structure to cleave into two pieces upon initiation of the cleave across the structure.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 15/20 - Controlling or regulating
• C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
• C30B 29/06 - Silicon

Abstract

Methods for growing a single crystal silicon ingot are disclosed. A dynamic state chart that monitors a plurality of ingot growth parameters may be produced and used during production of single crystal silicon ingots. In some embodiments, the dynamic state chart is a dynamic circle map chart having a plurality of sectors with each sector monitoring an ingot growth parameter.

IPC Classes  ?

• C30B 29/06 - Silicon
• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/20 - Controlling or regulating

Abstract

Methods for producing a silicon crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
• C30B 29/06 - Silicon
• C30B 15/20 - Controlling or regulating

Abstract

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

IPC Classes  ?

• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
• C30B 29/06 - Silicon
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon
• C30B 15/20 - Controlling or regulating
• C30B 33/02 - Heat treatment

Abstract

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon

Abstract

Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

IPC Classes  ?

• B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
• B24B 49/04 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
• B24B 37/005 - Control means for lapping machines or devices
• B24B 37/20 - Lapping pads for working plane surfaces
• B24B 49/03 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece

Abstract

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon

Abstract

A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

A method is disclosed for promoting the formation of uniform platelets in a monocrystalline semiconductor donor substrate by irradiating the monocrystalline semiconductor donor substrate with light. The photon-absorption assisted platelet formation process leads to uniformly distributed platelets with minimum built-in stress that promote the formation a well-defined cleave-plane in the subsequent layer transfer process.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.

IPC Classes  ?

• C30B 29/06 - Silicon
• C30B 33/02 - Heat treatment

Abstract

A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

Methods for assessing the quality of a semiconductor structure having a charge trapping layer (CTL) to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.

IPC Classes  ?

• H01L 21/66 - Testing or measuring during manufacture or treatment
• G01R 31/26 - Testing of individual semiconductor devices

Abstract

Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed. In some embodiments, the sound emitted from a bonded wafer structure is sensed during cleaving and a metric related to an attribute of the cleave is generated. The generated metric may be used for quality control and/or to adjust a cleave control parameter to improve the quality of the cleave of subsequently cleaved bonded wafer structures.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
• B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
• H01L 21/762 - Dielectric regions

Abstract

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

IPC Classes  ?

• C30B 29/06 - Silicon
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
• C30B 33/02 - Heat treatment
• C30B 33/08 - Etching
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

IPC Classes  ?

• C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
• C30B 29/06 - Silicon

Abstract

A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 29/51 - Insulating materials associated therewith
• H01L 29/66 - Types of semiconductor device

Abstract

A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type. The epitaxial layer is depleted by the handle substrate free carriers, thereby resulting in a high apparent resistivity, which improves the function of the structure in RF devices.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1x1014 atoms/cm3 and/or germanium at a concentration of at least about 1x1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

IPC Classes  ?

• C30B 29/06 - Silicon
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal

Abstract

A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)XHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4/Si substrates (B/N atomic ratio = 1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si3N4/Si is found.

IPC Classes  ?

• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating
• C30B 29/06 - Silicon
• C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal

Abstract

A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface. The method provided involves smoothing a semiconductor substrate surface by making use of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smoothness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30um X 30um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof