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2023
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Invention
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Device for high voltage applications.
A device includes a buried oxide layer disposed on a subst... |
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Invention
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Method of forming a sensor device.
The disclosed subject matter relates generally to methods of ... |
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Invention
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Transistor with wrap-around extrinsic base.
The present disclosure relates to semiconductor stru... |
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Invention
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Trenchless single-photon avalanche diodes.
Structures for a single-photon avalanche diode and me... |
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Invention
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Memory device having a switching element thicker at a first side than at a second side and method... |
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Invention
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Contact via structures of semiconductor devices.
The embodiments herein relate to contact via st... |
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Invention
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Semiconductor structures for galvanic isolation.
The present disclosure generally relates to sem... |
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Invention
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Galvanic isolation using isolation break between redistribution layer electrodes.
A structure in... |
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Invention
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Electrostatic discharge (esd) device with improved turn-on voltage.
The present disclosure relat... |
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Invention
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Crackstop structures.
The present disclosure relates to semiconductor structures, and more parti... |
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2022
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Invention
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Spiking neural network hardware based on magnetic-tunnel-junction layer stacks. Structures includ... |
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Invention
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Junction field-effect transistors.
Structures for a junction field-effect transistor and methods... |
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Invention
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Wrap-around memory circuit.
The present disclosure relates to a structure which includes a semic... |
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Invention
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Single-photon avalanche diode with isolated junctions.
The present disclosure relates to semicon... |
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Invention
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Electronic fuse devices and integration methods.
An eFuse structure is provided, the structure c... |
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Invention
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Resistive memory devices with a cavity between electrodes.
The disclosed subject matter relates ... |
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Invention
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E-fuse structures.
The present disclosure relates to semiconductor structures and, more particul... |
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Invention
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Structure for capacitor having defect-preventing regions in metal electrode.
A structure for a c... |
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Invention
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Compound semiconductor-based devices with stress-reduction features.
Structures including compou... |
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Invention
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Laser-detection devices including a voltage-controlled magnetic-tunneling-junction layer stack.
... |
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Invention
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Trench isolation structures and methods of making thereof.
A trench isolation structure and meth... |
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Invention
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Laterally-diffused metal-oxide-semiconductor devices with a field plate.
Structures for a latera... |
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Invention
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Air gap with inverted t-shaped lower portion extending through at least one metal layer, and rela... |
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Invention
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Capacitor and airgap structure.
The present disclosure relates to semiconductor structures and, ... |
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Invention
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Structure including discrete dielectric member for protecting first air gap during forming of sec... |
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Invention
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Hall effect devices integrated with junction transistors.
The disclosed subject matter relates g... |
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Invention
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Flash memory devices with thickened source/drain silicide.
Structures for a memory device and me... |
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Invention
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Silicon-controlled rectifiers for electrostatic discharge protection. Structures for a silicon-co... |
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Invention
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Multi-semiconductor layer photodetector and related method.
A structure includes a photodetector... |
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Invention
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Memory cells with three-dimensional gate coupling and methods of forming thereof.
A memory cell ... |
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Invention
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Photodiodes with serpentine shaped electrical junction. The present disclosure generally relates ... |
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Invention
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Electronic device with galvanic isolation and integration methods.
An electronic device is provi... |
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Invention
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Deep trench isolation structures with a substrate connection.
Semiconductor structures including... |
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Invention
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Thin film resistor.
The present disclosure relates to semiconductor structures and, more particu... |
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Invention
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Three terminal memory cells and method of making the same.
The disclosed subject matter relates ... |
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Invention
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Hybrid resistors including resistor bodies with different drift effects.
Structures for an on-ch... |
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Invention
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Electrodes of semiconductor memory devices having corners of acute angles.
According to an aspec... |
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Invention
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Magnetic field sensor.
The present disclosure relates to sensors and, more particularly, to magn... |
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Invention
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On-chip current sensor. The present disclosure relates to semiconductor structures and, more part... |
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Invention
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Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells.
St... |
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Invention
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Lateral multi-bit memory devices and methods of making the same.
The disclosed subject matter re... |
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Invention
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Air gap through at least two metal layers, and related method.
Methods of forming semiconductor ... |
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Invention
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Sram bit cells with three-dimensional integration.
Structures for a static random access memory ... |
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Invention
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Electronic fuses with a silicide layer having multiple thicknesses.
Structures for an electronic... |
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Invention
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Semiconductor memory devices having an electrode with an extension.
A semiconductor memory devic... |
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2021
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Invention
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Bipolar transistors.
The present disclosure relates to semiconductor structures and, more partic... |
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Invention
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Three-dimensional non-volatile memory device with filament confinement.
A non-volatile memory de... |
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Invention
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Conductive line structure having corrugated surface.
The disclosed subject matter relates genera... |
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Invention
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Heat dissipating structures.
The present disclosure relates to semiconductor structures and, mor... |
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Invention
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Galvanic isolation using isolation break between redistribution layer electrodes. A structure inc... |
